JP2006054211A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2006054211A JP2006054211A JP2004010385A JP2004010385A JP2006054211A JP 2006054211 A JP2006054211 A JP 2006054211A JP 2004010385 A JP2004010385 A JP 2004010385A JP 2004010385 A JP2004010385 A JP 2004010385A JP 2006054211 A JP2006054211 A JP 2006054211A
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- emitting element
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- 239000011521 glass Substances 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000007789 sealing Methods 0.000 abstract description 50
- 238000002844 melting Methods 0.000 abstract description 8
- 230000008018 melting Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 239000000565 sealant Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000006060 molten glass Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004383 yellowing Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】 LED素子1はサブマウント3に搭載され、このサブマウント3がリードフレームのリード部4A,4Bの先端部に実装される。この先端部、LED素子1、及びサブマウント3は、ガラス材による封止部材5によって所定の形状に封止される。封止部材5には、低融点であると共にリード部4A,4B等の熱膨脹率に近似した熱膨脹率を有するガラス材が用いられる。
【選択図】 図1
Description
4、リードフレーム 4A、リード部 4B、リード部
5、封止部材 5A、レンズ 6、リードフレーム 7、ガラスシート
8、ガラスシート 10、発光装置 11、上金型
11A、凹部 12、下金型 12A、凹部 31A、電極
31B、電極 32A、電極 32B、電極 33、ビアホール
40、発光装置 41、LED素子 42、ワイヤ
42A、ワイヤ接続部 50、放熱部 51、溝部 52、ガラス材
53、配線パターン 60、シリコンコート部
Claims (12)
- 発光素子と、
前記発光素子の周囲を前記発光素子に対する熱膨張率が150%から500%の範囲の透光性ガラス部および金属部で包囲して形成されることを特徴とする発光装置。 - 前記金属部は、前記発光素子に給電するリード状の給電部と、前記発光素子の発光に伴って生じる熱を放熱する放熱部とを有することを特徴とする請求項1記載の発光装置。
- 前記金属部は、前記給電部と前記放熱部とが一体的に形成されていることを特徴とする請求項2記載の発光装置。
- 前記金属部および前記透光性ガラス部は、略同等の熱膨張率を有して構成されることを特徴とする請求項1から3のいずれかに記載の発光装置。
- 前記金属部は、軟金属からなることを特徴とする請求項1から4のいずれかに記載の発光装置。
- 発光素子と、
前記発光素子を搭載するとともに電力を供給するための金属からなる給電部と、
前記発光素子と前記給電部の一部とを封止する透光性ガラス部とを有し、
前記給電部および前記透光性ガラス部は、前記発光素子に対し、熱膨張率の大なる材料によって形成され、前記発光素子は、前記給電部を含め前記透光性ガラス部によって全体が包囲されていることを特徴とする発光装置。 - 発光素子と、
前記発光素子をマウントするサブマウント部と、
前記発光素子に電力を供給するための金属からなる給電部と、
前記発光素子と前記サブマウント部と前記給電部の一部とを封止する透光性ガラス部とを有し、
前記サブマウント部には前記給電部からなる電力を前記発光素子に給電するための電気回路が形成され、
前記給電部および前記透光性ガラス部は、前記発光素子あるいは前記サブマウント部に対し、熱膨張率の大なる材料によって形成され、前記発光素子および前記サブマウント部は、前記給電部を含め前記透光性ガラス部によって全体が包囲されていることを特徴とする発光装置。 - 前記給電部および前記透光性ガラス部は、略同等の熱膨張率を有して構成されることを特徴とする請求項6又は7のいずれかに記載の発光装置。
- 前記給電部は、軟金属からなることを特徴とする請求項6から8のいずれかに記載の発光装置。
- 前記給電部は、熱伝導率が100W・m-1・k-1以上の材料である請求項6から9のいずれかに記載の発光装置。
- 前記サブマウント部は、熱伝導率が100W・m-1・k-1以上の材料である請求項7記載の発光装置。
- 前記給電部および前記透光性ガラス部は、前記発光素子あるいは前記サブマウント部に対し150%以上の線熱膨張率の材料である請求項7から11のいずれかに記載の発光装置。
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004010385A JP4029843B2 (ja) | 2004-01-19 | 2004-01-19 | 発光装置 |
EP13156568.1A EP2596948B1 (en) | 2003-03-10 | 2004-03-10 | Method of making a semiconductor device |
CN2004800064031A CN1759492B (zh) | 2003-03-10 | 2004-03-10 | 固体元件装置的制造方法 |
US10/548,560 US7824937B2 (en) | 2003-03-10 | 2004-03-10 | Solid element device and method for manufacturing the same |
EP04719060.8A EP1603170B1 (en) | 2003-03-10 | 2004-03-10 | Method for manufacturing a solid-state optical element device |
TW093106393A TWI246780B (en) | 2003-03-10 | 2004-03-10 | Solid-state component device and manufacturing method thereof |
CN2010101176741A CN101789482B (zh) | 2003-03-10 | 2004-03-10 | 固体元件装置及其制造方法 |
KR1020057016878A KR100693969B1 (ko) | 2003-03-10 | 2004-03-10 | 고체 소자 디바이스 및 그 제조 방법 |
PCT/JP2004/003089 WO2004082036A1 (ja) | 2003-03-10 | 2004-03-10 | 固体素子デバイスおよびその製造方法 |
US11/036,192 US7497597B2 (en) | 2004-01-19 | 2005-01-18 | Light emitting apparatus |
US12/923,788 US8154047B2 (en) | 2003-03-10 | 2010-10-07 | Solid element device and method for manufacturing the same |
US13/419,093 US8685766B2 (en) | 2003-03-10 | 2012-03-13 | Solid element device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004010385A JP4029843B2 (ja) | 2004-01-19 | 2004-01-19 | 発光装置 |
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JP2007214639A Division JP4165610B2 (ja) | 2007-08-21 | 2007-08-21 | 発光装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006054211A true JP2006054211A (ja) | 2006-02-23 |
JP4029843B2 JP4029843B2 (ja) | 2008-01-09 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004010385A Expired - Fee Related JP4029843B2 (ja) | 2003-03-10 | 2004-01-19 | 発光装置 |
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US (1) | US7497597B2 (ja) |
JP (1) | JP4029843B2 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0364552A (ja) * | 1989-08-02 | 1991-03-19 | Toyota Autom Loom Works Ltd | ジェットルームにおける緯入れ制御方法 |
JP2013524485A (ja) * | 2010-03-25 | 2013-06-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光デバイス用キャリア |
JPWO2013115379A1 (ja) * | 2012-02-02 | 2015-05-11 | シチズンホールディングス株式会社 | 半導体発光装置及びその製造方法 |
KR20160035226A (ko) * | 2014-09-23 | 2016-03-31 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
CN106159055A (zh) * | 2010-10-12 | 2016-11-23 | 皇家飞利浦电子股份有限公司 | 具有减小的外延应力的发光器件 |
KR20170114721A (ko) * | 2016-04-06 | 2017-10-16 | 엘지이노텍 주식회사 | 반도체 소자 패키지 |
KR101824034B1 (ko) | 2011-05-24 | 2018-01-31 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101789482B (zh) | 2003-03-10 | 2013-04-17 | 丰田合成株式会社 | 固体元件装置及其制造方法 |
DE102005042778A1 (de) * | 2004-09-09 | 2006-04-13 | Toyoda Gosei Co., Ltd., Nishikasugai | Optische Festkörpervorrichtung |
JP2006156668A (ja) * | 2004-11-29 | 2006-06-15 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
US20060171152A1 (en) * | 2005-01-20 | 2006-08-03 | Toyoda Gosei Co., Ltd. | Light emitting device and method of making the same |
US20060231737A1 (en) | 2005-04-15 | 2006-10-19 | Asahi Glass Company, Limited | Light emitting diode element |
KR100629496B1 (ko) * | 2005-08-08 | 2006-09-28 | 삼성전자주식회사 | Led 패키지 및 그 제조방법 |
CN100594623C (zh) * | 2005-09-20 | 2010-03-17 | 松下电工株式会社 | 发光二极管照明器具 |
JP5209177B2 (ja) * | 2005-11-14 | 2013-06-12 | 新光電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
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