JP6555907B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP6555907B2 JP6555907B2 JP2015052160A JP2015052160A JP6555907B2 JP 6555907 B2 JP6555907 B2 JP 6555907B2 JP 2015052160 A JP2015052160 A JP 2015052160A JP 2015052160 A JP2015052160 A JP 2015052160A JP 6555907 B2 JP6555907 B2 JP 6555907B2
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- 239000004065 semiconductor Substances 0.000 title claims description 128
- 229910052751 metal Inorganic materials 0.000 claims description 341
- 239000002184 metal Substances 0.000 claims description 341
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 96
- 239000010949 copper Substances 0.000 claims description 53
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 51
- 229910052802 copper Inorganic materials 0.000 claims description 51
- 229910052759 nickel Inorganic materials 0.000 claims description 47
- 239000010931 gold Substances 0.000 claims description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 23
- 229910052737 gold Inorganic materials 0.000 claims description 23
- 239000010936 titanium Substances 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 239000011701 zinc Substances 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 519
- 238000000034 method Methods 0.000 description 39
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- 239000010953 base metal Substances 0.000 description 9
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
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- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 229910001297 Zn alloy Inorganic materials 0.000 description 3
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 229910021645 metal ion Inorganic materials 0.000 description 3
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- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 238000001020 plasma etching Methods 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
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- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003738 black carbon Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
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- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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- 238000004382 potting Methods 0.000 description 1
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- 238000005486 sulfidation Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/0016—Processes relating to electrodes
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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Description
なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
なお、本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1(a)及び図1(b)は、第1の実施形態に係る半導体発光装置を例示する模式図である。
図1(a)は、半導体発光装置を例示する模式的断面図である。
図1(b)は、半導体発光装置を例示する模式的平面図である。
第1配線層21及び第2配線層22は、第2面15bと重なり層間絶縁層18の下に広がっている。ここで、図1(b)に示したように、第1電極16は、細線状の電極部分と、幅が拡大されたパッド部16aと、が設けられている。第1配線層21は、パッド部16aに達するビア21aを介して、第1電極16と接続されている。
実施形態に係る半導体発光装置111は、第1金属ピラー23と、第2金属ピラー24と、を含む。第1金属ピラー23は、さらに、第5金属層23dを含む。第5金属層23dは、金(Au)を含む。第2金属層23bは、第1金属層23aと第5金属層23dとの間に設けられている。第2金属ピラー24は、さらに、第6金属層24dを含む。第6金属層24dは、金を含む。第4金属層24bは、第3金属層24aと第6金属層24dとの間に設けられている。具体的には、例えば、ニッケルを含む第2金属層23bの下に、さらに、金を含む第5金属層23dが設けられる。ニッケルを含む第4金属層24bの下に、さらに、金を含む第6金属層24dが設けられる。第5金属層23d及び第6金属層24dは、例えば、金めっき層である。金めっき層を設けることで、はんだの濡れ性を向上させることができる。なお、第5金属層23d及び第6金属層24dのそれぞれの厚みは、例えば、0.01μm以上0.1μm以下である。
図12は、第2の実施形態に係る半導体発光装置を例示する模式的断面図である。
実施形態に係る半導体発光装置112は、第1金属ピラー23eと、第2金属ピラー24eと、を含む。第1金属ピラー23eは、例えば、銅を含む第1金属層23aと、ニッケルを含む第2金属層23bと、を含む多層構造を有する。第2金属ピラー24eは、例えば、銅を含む第3金属層24aと、ニッケルを含む第4金属層24bと、を含む多層構造を有する。
金属イオン(Mn+/M(n+1)+)がハイドロパーオキサイド(ROOH)を、レドックス反応により、フリーラジカル(RO・、ROO・)に接触分解し、連鎖反応を促進させる。
実施形態に係る半導体発光装置113は、第1金属ピラー23eと、第2金属ピラー24eと、を含む。第1金属ピラー23eは、さらに、第5金属層23dを含む。第5金属層23dは、金を含む。第2金属層23bは、第1金属層23aと第5金属層23dとの間に設けられている。第2金属ピラー24eは、さらに、第6金属層24dを含む。第6金属層24dは、金を含む。第4金属層24bは、第3金属層24aと第6金属層24dとの間に設けられている。
図14は、第3の実施形態に係る半導体発光装置の一部を例示する模式的断面図である。
実施形態に係る半導体発光装置114は、第1金属ピラー23fと、第2金属ピラー24fと、含む。第1金属ピラー23fは、第1金属層23aと、第2金属層23bと、を含む。第2金属層23bは、第1金属層23aの第1側面23sと対向して設けられている。第2金属層23bは、第1金属層23aの下面には設けられていない。第2金属ピラー24fは、第3金属層24aと、第4金属層24bと、を含む。第4金属層24bは、第3金属層24aの第2側面24sと対向して設けられている。第4金属層24bは、第3金属層24aの下面には設けられていない。
Claims (7)
- 第1面と、前記第1面と反対側の第2面と、発光層と、を含む半導体層と、
前記第2面と電気的に接続される第1金属ピラーであって、前記第1面から前記第2面に向かう第1方向に沿う第1側面を含む第1金属層と、硬さが前記第1金属層の硬さよりも硬い第2金属層と、を含み、前記第1金属層が前記第2面と前記第2金属層の少なくとも一部との間に設けられている、第1金属ピラーと、
前記第1方向と交差する第2方向において前記第1金属ピラーと並び前記第2面と電気的に接続される第2金属ピラーであって、前記第1方向に沿う第2側面を含む第3金属層と、硬さが前記第3金属層の硬さよりも硬い第4金属層と、を含み、前記第3金属層が前記第2面と前記第4金属層の少なくとも一部との間に設けられている、第2金属ピラーと、
前記第1金属ピラーの側面と前記第2金属ピラーの側面とを囲うように設けられた絶縁層と、
を備え、
前記第2金属層は、前記第1側面と前記絶縁層との間にも設けられており、
前記第4金属層は、前記第2側面と前記絶縁層との間にも設けられ、
前記絶縁層は、前記第2金属層および前記第4金属層を露出させた表面であって、前記第2面とは反対側の表面を有し、
前記絶縁層の前記表面と、前記絶縁層から露出された前記第2金属層の端面と、前記絶縁層から露出された前記第4金属層の端面と、が面一である半導体発光装置。 - 前記第1金属層及び前記第3金属層は、銅を含み、
前記第2金属層及び前記第4金属層は、ニッケル及びチタンの少なくとも1つの金属を含む請求項1記載の半導体発光装置。 - 前記第2金属層及び前記第4金属層は、亜鉛をさらに含む請求項2記載の半導体発光装置。
- 前記第1金属層は、前記第1方向に沿う第1側面をさらに含み、
前記第3金属層は、前記第1方向に沿う第2側面をさらに含み、
前記第2金属層は、前記第1側面と前記絶縁層との間に設けられ、
前記第4金属層は、前記第2側面と前記絶縁層との間に設けられている請求項1〜3のいずれか1つに記載の半導体発光装置。 - 前記第1金属層の前記第1方向における厚さは、前記第2金属層の前記第1方向及び前記第2方向における厚さよりも厚く、
前記第3金属層の前記第1方向における厚さは、前記第4金属層の前記第1方向及び前記第2方向における厚さよりも厚い請求項1〜4のいずれか1つに記載の半導体発光装置。 - 前記第1金属ピラーは、金を含む第5金属層をさらに含み、
前記第2金属ピラーは、金を含む第6金属層をさらに含み、
前記第2金属層は、前記第1金属層と前記第5金属層との間に設けられ、
前記第4金属層は、前記第3金属層と前記第6金属層との間に設けられている請求項1〜5のいずれか1つに記載の半導体発光装置。 - 前記第2金属層及び前記第4金属層の厚みは、0.01μm以上20μm以下である請求項5に記載の半導体発光装置。
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TW106139829A TWI699011B (zh) | 2015-03-16 | 2015-12-29 | 半導體發光裝置 |
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CN201610012015.9A CN105990506B (zh) | 2015-03-16 | 2016-01-08 | 半导体发光装置 |
US15/597,226 US9960320B2 (en) | 2015-03-16 | 2017-05-17 | Semiconductor light emitting device |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6135213B2 (ja) * | 2012-04-18 | 2017-05-31 | 日亜化学工業株式会社 | 半導体発光素子 |
DE102015114587A1 (de) * | 2015-09-01 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
CN110383509B (zh) * | 2016-12-06 | 2022-12-13 | 苏州立琻半导体有限公司 | 发光器件 |
JP7111457B2 (ja) * | 2017-10-27 | 2022-08-02 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
US10872861B2 (en) * | 2018-02-07 | 2020-12-22 | Advanced Semiconductor Engineering, Inc. Kaohsiung, Taiwan | Semiconductor packages |
US10811575B2 (en) * | 2018-07-30 | 2020-10-20 | Facebook Technologies, Llc | Laser lift-off masks |
JP2020083429A (ja) * | 2018-11-29 | 2020-06-04 | 共同印刷株式会社 | 包装袋 |
JP2021072341A (ja) * | 2019-10-30 | 2021-05-06 | キオクシア株式会社 | 半導体装置 |
US20210336090A1 (en) * | 2020-04-23 | 2021-10-28 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
CN112885822B (zh) * | 2020-07-27 | 2023-08-01 | 友达光电股份有限公司 | 显示装置的制造方法 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000052977A1 (fr) * | 1999-03-03 | 2000-09-08 | Daiwa Co., Ltd. | Procede de fabrication d'un panneau de cablage multicouche |
JP4029843B2 (ja) * | 2004-01-19 | 2008-01-09 | 豊田合成株式会社 | 発光装置 |
EP1603170B1 (en) * | 2003-03-10 | 2018-08-01 | Toyoda Gosei Co., Ltd. | Method for manufacturing a solid-state optical element device |
JP4890835B2 (ja) | 2005-10-28 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
TWI279934B (en) | 2005-11-22 | 2007-04-21 | Yaki Ind Co Ltd | Method for fabricating metal layer of diode with electroless plating |
EP1966833A1 (en) * | 2005-12-19 | 2008-09-10 | Showa Denko K.K. | Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device-and light-emitting diode lamp |
US8187900B2 (en) * | 2007-08-10 | 2012-05-29 | Hong Kong Applied Science and Technology Research Institute Company Limited | Optimization of polishing stop design |
JP2010067890A (ja) * | 2008-09-12 | 2010-03-25 | Hitachi Cable Ltd | 発光素子 |
JP4799606B2 (ja) * | 2008-12-08 | 2011-10-26 | 株式会社東芝 | 光半導体装置及び光半導体装置の製造方法 |
JP5310371B2 (ja) | 2009-08-10 | 2013-10-09 | ソニー株式会社 | 半導体発光素子及びその製造方法 |
JP2011071272A (ja) | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP5325834B2 (ja) | 2010-05-24 | 2013-10-23 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5281612B2 (ja) * | 2010-05-26 | 2013-09-04 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP4875185B2 (ja) * | 2010-06-07 | 2012-02-15 | 株式会社東芝 | 光半導体装置 |
JP5759790B2 (ja) * | 2010-06-07 | 2015-08-05 | 株式会社東芝 | 半導体発光装置の製造方法 |
JP5657591B2 (ja) * | 2011-03-23 | 2015-01-21 | 株式会社東芝 | 半導体発光装置およびその製造方法 |
JP4756110B2 (ja) | 2011-04-08 | 2011-08-24 | 株式会社東芝 | 発光装置の製造方法 |
US9269878B2 (en) * | 2011-05-27 | 2016-02-23 | Lg Innotek Co., Ltd. | Light emitting device and light emitting apparatus |
JP5844101B2 (ja) * | 2011-09-15 | 2016-01-13 | 新光電気工業株式会社 | 発光装置用の配線基板、発光装置及び発光装置用配線基板の製造方法 |
KR101969334B1 (ko) * | 2011-11-16 | 2019-04-17 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 발광 장치 |
JP2013115336A (ja) | 2011-11-30 | 2013-06-10 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
TWI606618B (zh) * | 2012-01-03 | 2017-11-21 | Lg伊諾特股份有限公司 | 發光裝置 |
JP2014036162A (ja) | 2012-08-09 | 2014-02-24 | Denki Kagaku Kogyo Kk | Led用回路基板、ledモジュール、led発光装置、発光器具及び照明器具 |
JP6001956B2 (ja) * | 2012-08-10 | 2016-10-05 | 株式会社東芝 | 半導体装置 |
JP5462378B2 (ja) | 2013-01-10 | 2014-04-02 | 株式会社東芝 | 半導体発光装置、発光装置、半導体発光装置の製造方法 |
JP2014150196A (ja) | 2013-02-01 | 2014-08-21 | Toshiba Corp | 半導体発光装置およびその製造方法 |
JP6045999B2 (ja) * | 2013-07-31 | 2016-12-14 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP6306308B2 (ja) | 2013-09-19 | 2018-04-04 | 株式会社東芝 | 半導体発光装置 |
US10304998B2 (en) * | 2013-09-27 | 2019-05-28 | Seoul Viosys Co., Ltd. | Light emitting diode chip and light emitting device having the same |
KR102075981B1 (ko) * | 2014-02-21 | 2020-02-11 | 삼성전자주식회사 | 발광다이오드 패키지의 제조방법 |
JP5834109B2 (ja) | 2014-05-14 | 2015-12-16 | 株式会社東芝 | 半導体発光装置、半導体発光装置の製造方法、発光装置の製造方法 |
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US20180204980A1 (en) | 2018-07-19 |
US20160276560A1 (en) | 2016-09-22 |
US9705039B2 (en) | 2017-07-11 |
CN105990506B (zh) | 2019-06-14 |
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US9960320B2 (en) | 2018-05-01 |
JP2016174020A (ja) | 2016-09-29 |
US20170250307A1 (en) | 2017-08-31 |
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