JP2005535103A - 半導体パッケージ装置ならびに製作および試験方法 - Google Patents

半導体パッケージ装置ならびに製作および試験方法 Download PDF

Info

Publication number
JP2005535103A
JP2005535103A JP2003543094A JP2003543094A JP2005535103A JP 2005535103 A JP2005535103 A JP 2005535103A JP 2003543094 A JP2003543094 A JP 2003543094A JP 2003543094 A JP2003543094 A JP 2003543094A JP 2005535103 A JP2005535103 A JP 2005535103A
Authority
JP
Japan
Prior art keywords
integrated circuit
die
substrate
present
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003543094A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005535103A5 (enExample
Inventor
エイ． ガーバー、マーク
エム． オコナー、ショーン
エイ． トンプソン、トレント
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2005535103A publication Critical patent/JP2005535103A/ja
Publication of JP2005535103A5 publication Critical patent/JP2005535103A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06506—Wire or wire-like electrical connections between devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H01L2225/06586—Housing with external bump or bump-like connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06596—Structural arrangements for testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Wire Bonding (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2003543094A 2001-11-08 2002-10-16 半導体パッケージ装置ならびに製作および試験方法 Pending JP2005535103A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/008,800 US6916682B2 (en) 2001-11-08 2001-11-08 Semiconductor package device for use with multiple integrated circuits in a stacked configuration and method of formation and testing
PCT/US2002/033083 WO2003041158A2 (en) 2001-11-08 2002-10-16 Semiconductor package device and method of formation and testing

Publications (2)

Publication Number Publication Date
JP2005535103A true JP2005535103A (ja) 2005-11-17
JP2005535103A5 JP2005535103A5 (enExample) 2006-01-05

Family

ID=21733752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003543094A Pending JP2005535103A (ja) 2001-11-08 2002-10-16 半導体パッケージ装置ならびに製作および試験方法

Country Status (8)

Country Link
US (1) US6916682B2 (enExample)
EP (1) EP1481421A2 (enExample)
JP (1) JP2005535103A (enExample)
KR (1) KR100926002B1 (enExample)
CN (1) CN100477141C (enExample)
AU (1) AU2002337875A1 (enExample)
TW (1) TWI260076B (enExample)
WO (1) WO2003041158A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147226A (ja) * 2006-12-06 2008-06-26 Toppan Printing Co Ltd 半導体装置及びその製造方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG108245A1 (en) 2001-03-30 2005-01-28 Micron Technology Inc Ball grid array interposer, packages and methods
JP2003243604A (ja) * 2002-02-13 2003-08-29 Sony Corp 電子部品及び電子部品の製造方法
US7573136B2 (en) * 2002-06-27 2009-08-11 Micron Technology, Inc. Semiconductor device assemblies and packages including multiple semiconductor device components
US6906415B2 (en) * 2002-06-27 2005-06-14 Micron Technology, Inc. Semiconductor device assemblies and packages including multiple semiconductor devices and methods
US6964881B2 (en) * 2002-08-27 2005-11-15 Micron Technology, Inc. Multi-chip wafer level system packages and methods of forming same
US7071545B1 (en) * 2002-12-20 2006-07-04 Asat Ltd. Shielded integrated circuit package
JP3867796B2 (ja) * 2003-10-09 2007-01-10 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
JP4556023B2 (ja) * 2004-04-22 2010-10-06 独立行政法人産業技術総合研究所 システムインパッケージ試験検査装置および試験検査方法
TWI270953B (en) * 2005-08-17 2007-01-11 Advanced Semiconductor Eng Substrate and testing method thereof
KR100690246B1 (ko) * 2006-01-10 2007-03-12 삼성전자주식회사 플립 칩 시스템 인 패키지 제조 방법
US8410594B2 (en) * 2006-01-11 2013-04-02 Stats Chippac Ltd. Inter-stacking module system
US20080251901A1 (en) * 2006-01-24 2008-10-16 Zigmund Ramirez Camacho Stacked integrated circuit package system
DE102006017059B4 (de) * 2006-04-11 2008-04-17 Infineon Technologies Ag Halbleiter-Bauelement-System, sowie Verfahren zum Modifizieren eines Halbleiterbauelements
JP3942190B1 (ja) * 2006-04-25 2007-07-11 国立大学法人九州工業大学 両面電極構造の半導体装置及びその製造方法
KR100782774B1 (ko) * 2006-05-25 2007-12-05 삼성전기주식회사 Ｓｉｐ 모듈
US7973310B2 (en) * 2008-07-11 2011-07-05 Chipmos Technologies Inc. Semiconductor package structure and method for manufacturing the same
US8384203B2 (en) 2008-07-18 2013-02-26 United Test And Assembly Center Ltd. Packaging structural member
US8742603B2 (en) * 2010-05-20 2014-06-03 Qualcomm Incorporated Process for improving package warpage and connection reliability through use of a backside mold configuration (BSMC)
US8664540B2 (en) * 2011-05-27 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Interposer testing using dummy connections
US9472533B2 (en) * 2013-11-20 2016-10-18 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming wire bondable fan-out EWLB package
WO2017111773A1 (en) * 2015-12-23 2017-06-29 Juan Landeros Reverse mounted gull wing electronic package
US9721881B1 (en) 2016-04-29 2017-08-01 Nxp Usa, Inc. Apparatus and methods for multi-die packaging
US20180190776A1 (en) * 2016-12-30 2018-07-05 Sireesha Gogineni Semiconductor chip package with cavity
KR102886060B1 (ko) * 2022-11-22 2025-11-12 앱솔릭스 인코포레이티드 패키징 기판 및 이를 포함하는 반도체 패키지

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2439478A1 (fr) * 1978-10-19 1980-05-16 Cii Honeywell Bull Boitier plat pour dispositifs a circuits integres
US4729061A (en) * 1985-04-29 1988-03-01 Advanced Micro Devices, Inc. Chip on board package for integrated circuit devices using printed circuit boards and means for conveying the heat to the opposite side of the package from the chip mounting side to permit the heat to dissipate therefrom
JPH0821672B2 (ja) 1987-07-04 1996-03-04 株式会社堀場製作所 イオン濃度測定用シート型電極の製造方法
JP2585006B2 (ja) * 1987-07-22 1997-02-26 東レ・ダウコーニング・シリコーン株式会社 樹脂封止型半導体装置およびその製造方法
US5219795A (en) * 1989-02-07 1993-06-15 Fujitsu Limited Dual in-line packaging and method of producing the same
US5200362A (en) * 1989-09-06 1993-04-06 Motorola, Inc. Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film
US5172303A (en) * 1990-11-23 1992-12-15 Motorola, Inc. Electronic component assembly
US5383269A (en) * 1991-09-03 1995-01-24 Microelectronics And Computer Technology Corporation Method of making three dimensional integrated circuit interconnect module
US5468994A (en) 1992-12-10 1995-11-21 Hewlett-Packard Company High pin count package for semiconductor device
US5291062A (en) * 1993-03-01 1994-03-01 Motorola, Inc. Area array semiconductor device having a lid with functional contacts
US5679978A (en) 1993-12-06 1997-10-21 Fujitsu Limited Semiconductor device having resin gate hole through substrate for resin encapsulation
JP3288840B2 (ja) 1994-02-28 2002-06-04 三菱電機株式会社 半導体装置およびその製造方法
US5747874A (en) * 1994-09-20 1998-05-05 Fujitsu Limited Semiconductor device, base member for semiconductor device and semiconductor device unit
US5998864A (en) 1995-05-26 1999-12-07 Formfactor, Inc. Stacking semiconductor devices, particularly memory chips
JP2725637B2 (ja) * 1995-05-31 1998-03-11 日本電気株式会社 電子回路装置およびその製造方法
WO1996041378A1 (en) 1995-06-07 1996-12-19 The Panda Project Semiconductor die carrier having double-sided die attach plate
JPH0917919A (ja) 1995-06-29 1997-01-17 Fujitsu Ltd 半導体装置
US5798564A (en) * 1995-12-21 1998-08-25 Texas Instruments Incorporated Multiple chip module apparatus having dual sided substrate
US5843808A (en) 1996-01-11 1998-12-01 Asat, Limited Structure and method for automated assembly of a tab grid array package
KR0179921B1 (ko) * 1996-05-17 1999-03-20 문정환 적측형 반도체 패키지
US5723907A (en) * 1996-06-25 1998-03-03 Micron Technology, Inc. Loc simm
US6225688B1 (en) 1997-12-11 2001-05-01 Tessera, Inc. Stacked microelectronic assembly and method therefor
US5994166A (en) * 1997-03-10 1999-11-30 Micron Technology, Inc. Method of constructing stacked packages
US5815372A (en) * 1997-03-25 1998-09-29 Intel Corporation Packaging multiple dies on a ball grid array substrate
JP2964983B2 (ja) 1997-04-02 1999-10-18 日本電気株式会社 三次元メモリモジュール及びそれを用いた半導体装置
US5963429A (en) * 1997-08-20 1999-10-05 Sulzer Intermedics Inc. Printed circuit substrate with cavities for encapsulating integrated circuits
JPH11219984A (ja) 1997-11-06 1999-08-10 Sharp Corp 半導体装置パッケージおよびその製造方法ならびにそのための回路基板
US6133067A (en) * 1997-12-06 2000-10-17 Amic Technology Inc. Architecture for dual-chip integrated circuit package and method of manufacturing the same
FR2772516B1 (fr) * 1997-12-12 2003-07-04 Ela Medical Sa Circuit electronique, notamment pour un dispositif medical implantable actif tel qu'un stimulateur ou defibrillateur cardiaque, et son procede de realisation
JP2000208698A (ja) * 1999-01-18 2000-07-28 Toshiba Corp 半導体装置
JP3939429B2 (ja) * 1998-04-02 2007-07-04 沖電気工業株式会社 半導体装置
US6184463B1 (en) * 1998-04-13 2001-02-06 Harris Corporation Integrated circuit package for flip chip
US6329713B1 (en) * 1998-10-21 2001-12-11 International Business Machines Corporation Integrated circuit chip carrier assembly comprising a stiffener attached to a dielectric substrate
JP3512657B2 (ja) 1998-12-22 2004-03-31 シャープ株式会社 半導体装置
US6201302B1 (en) 1998-12-31 2001-03-13 Sampo Semiconductor Corporation Semiconductor package having multi-dies
JP3235589B2 (ja) 1999-03-16 2001-12-04 日本電気株式会社 半導体装置
TW409330B (en) 1999-03-20 2000-10-21 United Microelectronics Corp Repairable multi-chip module package
JP3576030B2 (ja) * 1999-03-26 2004-10-13 沖電気工業株式会社 半導体装置及びその製造方法
US6117704A (en) * 1999-03-31 2000-09-12 Irvine Sensors Corporation Stackable layers containing encapsulated chips
JP3575001B2 (ja) * 1999-05-07 2004-10-06 アムコー テクノロジー コリア インコーポレーティド 半導体パッケージ及びその製造方法
JP2001077301A (ja) * 1999-08-24 2001-03-23 Amkor Technology Korea Inc 半導体パッケージ及びその製造方法
JP3418759B2 (ja) * 1999-08-24 2003-06-23 アムコー テクノロジー コリア インコーポレーティド 半導体パッケージ
JP2001077293A (ja) * 1999-09-02 2001-03-23 Nec Corp 半導体装置
JP2001094045A (ja) * 1999-09-22 2001-04-06 Seiko Epson Corp 半導体装置
JP3485507B2 (ja) * 1999-10-25 2004-01-13 沖電気工業株式会社 半導体装置
US6344687B1 (en) * 1999-12-22 2002-02-05 Chih-Kung Huang Dual-chip packaging
SG100635A1 (en) * 2001-03-09 2003-12-26 Micron Technology Inc Die support structure
SG108245A1 (en) * 2001-03-30 2005-01-28 Micron Technology Inc Ball grid array interposer, packages and methods
US6787916B2 (en) * 2001-09-13 2004-09-07 Tru-Si Technologies, Inc. Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147226A (ja) * 2006-12-06 2008-06-26 Toppan Printing Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP1481421A2 (en) 2004-12-01
US20030085463A1 (en) 2003-05-08
WO2003041158A3 (en) 2003-10-23
KR100926002B1 (ko) 2009-11-09
US6916682B2 (en) 2005-07-12
CN100477141C (zh) 2009-04-08
TW200300283A (en) 2003-05-16
AU2002337875A1 (en) 2003-05-19
KR20050037430A (ko) 2005-04-21
CN1602548A (zh) 2005-03-30
WO2003041158A2 (en) 2003-05-15
TWI260076B (en) 2006-08-11

Similar Documents

Publication Publication Date Title
JP2005535103A (ja) 半導体パッケージ装置ならびに製作および試験方法
TWI482261B (zh) 三維系統級封裝堆疊式封裝結構
JP4808408B2 (ja) マルチチップパッケージ、これに使われる半導体装置及びその製造方法
JP3798620B2 (ja) 半導体装置の製造方法
CN1983533B (zh) 用于封装半导体器件的方法
US20080182398A1 (en) Varied Solder Mask Opening Diameters Within a Ball Grid Array Substrate
JP5227501B2 (ja) スタックダイパッケージ及びそれを製造する方法
CN105845643A (zh) 一种嵌入硅基板芯片封装结构及其制作方法
KR101370016B1 (ko) 베이스 패키지 상에 다이를 갖는 집적 회로 패키지 시스템
CN105895605A (zh) 一种薄芯片贴装基板扇出型封装结构及其制造方法
US6903464B2 (en) Semiconductor die package
KR101474189B1 (ko) 집적회로 패키지
JP2003243565A (ja) パッケージ化半導体装置およびその製作方法
CN101266966B (zh) 多芯片封装模块及其制造方法
KR100673379B1 (ko) 적층 패키지와 그 제조 방법
CN101290929B (zh) 堆栈式芯片封装结构
US20080237831A1 (en) Multi-chip semiconductor package structure
TWI651827B (zh) 無基板封裝結構
CN100466246C (zh) 用于封装的柔性基板
US8410598B2 (en) Semiconductor package and method of manufacturing the same
KR100533761B1 (ko) 반도체패키지
KR100610916B1 (ko) 반도체패키지
TWI590349B (zh) 晶片封裝體及晶片封裝製程
KR100592785B1 (ko) 칩 스케일 패키지를 적층한 적층 패키지
TWI400773B (zh) 具有至少部份封裝之電路裝置及其形成之方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051017

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051017

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081107

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081111

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090129

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090616