JP2004274052A - Ｕｖ照射による高密度及び多孔質有機ケイ酸塩材料の機械的強化 - Google Patents

Ｕｖ照射による高密度及び多孔質有機ケイ酸塩材料の機械的強化 Download PDF

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Publication number
JP2004274052A
JP2004274052A JP2004059560A JP2004059560A JP2004274052A JP 2004274052 A JP2004274052 A JP 2004274052A JP 2004059560 A JP2004059560 A JP 2004059560A JP 2004059560 A JP2004059560 A JP 2004059560A JP 2004274052 A JP2004274052 A JP 2004274052A
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Prior art keywords
film
organosilicate
deposition
hardness
porous
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JP2004059560A
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Japanese (ja)
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JP2004274052A5 (https=
Inventor
Aaron Scott Lukas
アーロン　スコット　ルーカス
Mark Leonard O'neill
マーク　レオナルド　オニール
Jean Louise Vincent
ルイス ビンセント ジーン
Raymond Nicholas Vrtis
レイモンド　ニコラス　バーティス
Mark Daniel Bitner
ダニエル ビトナー マーク
Eugene Joseph Karwacki Jr
ジョゼフ カーワッキ，ジュニア ユージン
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Air Products and Chemicals Inc
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Air Products and Chemicals Inc
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Priority claimed from US10/379,466 external-priority patent/US7098149B2/en
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of JP2004274052A publication Critical patent/JP2004274052A/ja
Publication of JP2004274052A5 publication Critical patent/JP2004274052A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH OR ROCK DRILLING; MINING
    • E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B4/00—Drives for drilling, used in the borehole
    • E21B4/06—Down-hole impacting means, e.g. hammers
    • E21B4/14—Fluid operated hammers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH OR ROCK DRILLING; MINING
    • E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B33/00—Sealing or packing boreholes or wells
    • E21B33/10—Sealing or packing boreholes or wells in the borehole
    • E21B33/13—Methods or devices for cementing, for plugging holes, crevices or the like
    • E21B33/138—Plastering the borehole wall; Injecting into the formation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Geology (AREA)
  • Mining & Mineral Resources (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Environmental & Geological Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2004059560A 2003-03-04 2004-03-03 Ｕｖ照射による高密度及び多孔質有機ケイ酸塩材料の機械的強化 Withdrawn JP2004274052A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/379,466 US7098149B2 (en) 2003-03-04 2003-03-04 Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US10/624,357 US7468290B2 (en) 2003-03-04 2003-07-21 Mechanical enhancement of dense and porous organosilicate materials by UV exposure

Related Child Applications (1)

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JP2008202204A Division JP4913782B2 (ja) 2003-03-04 2008-08-05 Ｕｖ照射による高密度及び多孔質有機ケイ酸塩材料の機械的強化

Publications (2)

Publication Number Publication Date
JP2004274052A true JP2004274052A (ja) 2004-09-30
JP2004274052A5 JP2004274052A5 (https=) 2007-07-12

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EP (2) EP3231892B1 (https=)
JP (1) JP2004274052A (https=)
KR (1) KR100637093B1 (https=)
CN (1) CN100543947C (https=)
TW (1) TWI240959B (https=)

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JP2006041052A (ja) * 2004-07-23 2006-02-09 Jsr Corp 半導体装置の絶縁膜形成用組成物、シリカ系膜およびその形成方法、ならびに配線構造体および半導体装置
JP2006190872A (ja) * 2005-01-07 2006-07-20 Fujitsu Ltd 半導体装置の製造方法
JP2006265350A (ja) * 2005-03-23 2006-10-05 Ulvac Japan Ltd 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
JP2006528426A (ja) * 2003-07-21 2006-12-14 アクセリス テクノロジーズ インコーポレーテッド 最新のＬｏｗ−ｋ材料のための紫外線硬化法
WO2007032563A1 (ja) * 2005-09-16 2007-03-22 Nec Corporation 配線構造並びに半導体装置及びその製造方法
JP2007194639A (ja) * 2006-01-20 2007-08-02 Internatl Business Mach Corp <Ibm> ＳｉＣＯＨ誘電体およびその製造方法
JP2007250706A (ja) * 2006-03-15 2007-09-27 Sony Corp 半導体装置の製造方法
JP2008010877A (ja) * 2006-06-27 2008-01-17 Air Products & Chemicals Inc 還元性雰囲気下における絶縁膜の硬化
JP2008078621A (ja) * 2006-08-21 2008-04-03 Fujitsu Ltd 絶縁膜、多層配線装置の製造方法および多層配線装置
JP2008103586A (ja) * 2006-10-20 2008-05-01 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2008520100A (ja) * 2004-11-12 2008-06-12 アクセリス テクノロジーズ インコーポレーテッド 多孔性低ｋ誘電体フィルムの紫外線に補助された細孔シーリング
JP2008527757A (ja) * 2005-01-13 2008-07-24 インターナショナル・ビジネス・マシーンズ・コーポレーション 制御された二軸応力を有する超低誘電率膜および該作製方法
JP2008186849A (ja) * 2007-01-26 2008-08-14 Toshiba Corp 半導体装置の製造方法
JP2008193038A (ja) * 2007-02-07 2008-08-21 United Microelectronics Corp 多孔質低誘電率層の製造方法及び構造、相互接続処理方法及び相互接続構造
JP2008251774A (ja) * 2007-03-30 2008-10-16 Mitsui Chemicals Inc 多孔質シリカフィルムの製造方法
JP2008544484A (ja) * 2005-06-09 2008-12-04 アクセリス テクノロジーズ インコーポレーテッド プリメタルおよび／またはシャロートレンチアイソレーションに用いられるスピン−オン誘電体材料のための紫外線硬化処理方法
JP2009117743A (ja) * 2007-11-09 2009-05-28 Panasonic Corp 半導体装置及びその製造方法
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JP2009152402A (ja) * 2007-12-20 2009-07-09 Axcelis Technologies Inc 多孔性の低ｋの誘電体を形成するために、紫外線を利用してポロゲンを除去及び／又はキュアするプロセス
JP2009531491A (ja) * 2006-03-31 2009-09-03 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 新規な孔形成前駆体組成物及びそれから得られる多孔誘電層
JP2009539265A (ja) * 2006-05-30 2009-11-12 アプライド マテリアルズ インコーポレイテッド ギャップ充填と共形のフィルムの適用のために低ｋ膜を堆積させ硬化する方法
JP2009277686A (ja) * 2008-05-12 2009-11-26 Taiyo Nippon Sanso Corp 絶縁膜の成膜方法および絶縁膜
JP2010141335A (ja) * 2008-12-11 2010-06-24 Air Products & Chemicals Inc 有機シリケート材料からの炭素の除去方法
WO2010082250A1 (ja) * 2009-01-13 2010-07-22 パナソニック株式会社 半導体装置及びその製造方法
JP2011082540A (ja) * 2003-03-18 2011-04-21 Internatl Business Mach Corp <Ibm> 多相超低ｋ誘電
JP2011514678A (ja) * 2008-03-06 2011-05-06 東京エレクトロン株式会社 有孔性低誘電率誘電膜の硬化方法
US8133821B2 (en) 2008-11-18 2012-03-13 Renesas Electronics Corporation Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device
JP2012510726A (ja) * 2008-12-01 2012-05-10 エア プロダクツ アンド ケミカルズ インコーポレイテッド 酸素含有前駆体を用いる誘電体バリアの堆積
JP2012522378A (ja) * 2009-03-24 2012-09-20 東京エレクトロン株式会社 化学気相成長法
US8394457B2 (en) 2006-06-02 2013-03-12 Ulvac, Inc. Precursor composition for porous thin film, method for preparation of the precursor composition, porous thin film, method for preparation of the porous thin film, and semiconductor device
KR20220044839A (ko) * 2019-08-16 2022-04-11 버슘머트리얼즈 유에스, 엘엘씨 규소 화합물 및 이를 사용한 필름의 증착 방법

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