JP2020513680A - 高密度osg膜用シリル架橋アルキル化合物の使用 - Google Patents
高密度osg膜用シリル架橋アルキル化合物の使用 Download PDFInfo
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- JP2020513680A JP2020513680A JP2019523041A JP2019523041A JP2020513680A JP 2020513680 A JP2020513680 A JP 2020513680A JP 2019523041 A JP2019523041 A JP 2019523041A JP 2019523041 A JP2019523041 A JP 2019523041A JP 2020513680 A JP2020513680 A JP 2020513680A
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- Prior art keywords
- vapor deposition
- chemical vapor
- bis
- deposition method
- ethane
- Prior art date
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- -1 alkyl compound Chemical class 0.000 title claims description 14
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 title description 3
- 239000011229 interlayer Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 57
- 239000002243 precursor Substances 0.000 claims description 43
- 239000000203 mixture Substances 0.000 claims description 38
- 238000005229 chemical vapour deposition Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 238000011282 treatment Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 10
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 229910052734 helium Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052743 krypton Inorganic materials 0.000 claims description 7
- 229910052724 xenon Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 229910052754 neon Inorganic materials 0.000 claims description 6
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- WVUBQGDTOLPXBV-UHFFFAOYSA-N 1,1,3,3-tetraethoxy-1,3-disiletane Chemical compound CCO[Si]1(OCC)C[Si](OCC)(OCC)C1 WVUBQGDTOLPXBV-UHFFFAOYSA-N 0.000 claims description 2
- CBPGUZJXEBIBNM-UHFFFAOYSA-N 1,1,3,3-tetramethoxy-1,3-disiletane Chemical group CO[Si]1(OC)C[Si](OC)(OC)C1 CBPGUZJXEBIBNM-UHFFFAOYSA-N 0.000 claims description 2
- GYQTVPWRCZIODP-UHFFFAOYSA-N 1,1,3-trimethoxy-3-methyl-1,3-disiletane Chemical compound CO[Si]1(C)C[Si](OC)(OC)C1 GYQTVPWRCZIODP-UHFFFAOYSA-N 0.000 claims description 2
- GONOJQIOFHYZDY-UHFFFAOYSA-N 1,1,4,4-tetraethoxy-1,4-disilinane Chemical compound CCO[Si]1(OCC)CC[Si](OCC)(OCC)CC1 GONOJQIOFHYZDY-UHFFFAOYSA-N 0.000 claims description 2
- JMPCFXZKYRVNGQ-UHFFFAOYSA-N 1,1,4,4-tetramethoxy-1,4-disilinane Chemical compound CO[Si]1(OC)CC[Si](OC)(OC)CC1 JMPCFXZKYRVNGQ-UHFFFAOYSA-N 0.000 claims description 2
- MWYJUCSVGCRTAX-UHFFFAOYSA-N 1,1,4-triethoxy-4-methyl-1,4-disilinane Chemical compound CCO[Si]1(C)CC[Si](OCC)(OCC)CC1 MWYJUCSVGCRTAX-UHFFFAOYSA-N 0.000 claims description 2
- YOUCPMJDMBSYBX-UHFFFAOYSA-N 1,1,4-trimethoxy-4-methyl-1,4-disilinane Chemical compound CO[Si]1(C)CC[Si](OC)(OC)CC1 YOUCPMJDMBSYBX-UHFFFAOYSA-N 0.000 claims description 2
- ILINZMCPVNSKKX-UHFFFAOYSA-N 1,1-diethoxy-1,3-disiletane Chemical compound C(C)O[Si]1(C[SiH2]C1)OCC ILINZMCPVNSKKX-UHFFFAOYSA-N 0.000 claims description 2
- VUIHURGLQFXGNV-UHFFFAOYSA-N 1,1-diethoxy-1,4-disilinane Chemical compound C(C)O[Si]1(CC[SiH2]CC1)OCC VUIHURGLQFXGNV-UHFFFAOYSA-N 0.000 claims description 2
- QGYXJDWPNNCWJD-UHFFFAOYSA-N 1,1-dimethoxy-1,3-disiletane Chemical compound CO[Si]1(C[SiH2]C1)OC QGYXJDWPNNCWJD-UHFFFAOYSA-N 0.000 claims description 2
- MXCJTONVKZQMIF-UHFFFAOYSA-N 1,1-dimethoxy-1,4-disilinane Chemical compound CO[Si]1(CC[SiH2]CC1)OC MXCJTONVKZQMIF-UHFFFAOYSA-N 0.000 claims description 2
- CTNZAPZZIAVMCI-UHFFFAOYSA-N 1,3-diethoxy-1,3-dimethyl-1,3-disiletane Chemical compound CCO[Si]1(C)C[Si](C)(OCC)C1 CTNZAPZZIAVMCI-UHFFFAOYSA-N 0.000 claims description 2
- JKQCLCFIOSQPRN-UHFFFAOYSA-N 1,3-diethoxy-1,3-disiletane Chemical compound C(C)O[SiH]1C[SiH](C1)OCC JKQCLCFIOSQPRN-UHFFFAOYSA-N 0.000 claims description 2
- JSHRSQPQSWYHIM-UHFFFAOYSA-N 1,3-dimethoxy-1,3-dimethyl-1,3-disiletane Chemical compound CO[Si]1(C)C[Si](C)(OC)C1 JSHRSQPQSWYHIM-UHFFFAOYSA-N 0.000 claims description 2
- NZZQLIMCPSRMNN-UHFFFAOYSA-N 1,3-dimethoxy-1,3-disiletane Chemical compound CO[SiH]1C[SiH](C1)OC NZZQLIMCPSRMNN-UHFFFAOYSA-N 0.000 claims description 2
- VVCTXTAWDNQGDP-UHFFFAOYSA-N 1,3-dimethoxy-1-methyldisiletane Chemical compound CO[Si]1([SiH2]C(C1)OC)C VVCTXTAWDNQGDP-UHFFFAOYSA-N 0.000 claims description 2
- LXDHQRKOGDCAMG-UHFFFAOYSA-N 1,4-diethoxy-1,4-disilinane Chemical compound C(C)O[SiH]1CC[SiH](CC1)OCC LXDHQRKOGDCAMG-UHFFFAOYSA-N 0.000 claims description 2
- RDRJOHWRPPUUNI-UHFFFAOYSA-N 1-[dimethoxy(methyl)silyl]ethyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C(C)[Si](C)(OC)OC RDRJOHWRPPUUNI-UHFFFAOYSA-N 0.000 claims description 2
- IHHQQOXNFOXSJU-UHFFFAOYSA-N 1-dimethoxysilylethyl(dimethoxy)silane Chemical compound CC([SiH](OC)OC)[SiH](OC)OC IHHQQOXNFOXSJU-UHFFFAOYSA-N 0.000 claims description 2
- CBMKFKFESXXWQO-UHFFFAOYSA-N 2-diethoxysilylethyl(diethoxy)silane Chemical compound CCO[SiH](OCC)CC[SiH](OCC)OCC CBMKFKFESXXWQO-UHFFFAOYSA-N 0.000 claims description 2
- FHGBFMXZJMFPSJ-UHFFFAOYSA-N 2-dimethoxysilylethyl(dimethoxy)silane Chemical compound CO[SiH](CC[SiH](OC)OC)OC FHGBFMXZJMFPSJ-UHFFFAOYSA-N 0.000 claims description 2
- VOCYNXLXMSARJM-UHFFFAOYSA-N 2-dimethoxysilylpropan-2-yl(dimethoxy)silane Chemical compound CC([SiH](OC)OC)([SiH](OC)OC)C VOCYNXLXMSARJM-UHFFFAOYSA-N 0.000 claims description 2
- SFESTSCPFLVMSE-UHFFFAOYSA-N C(C)O[Si]1(CC[Si](CC1)(C)OCC)C Chemical compound C(C)O[Si]1(CC[Si](CC1)(C)OCC)C SFESTSCPFLVMSE-UHFFFAOYSA-N 0.000 claims description 2
- MWUBRSFVUUPGAW-UHFFFAOYSA-N C(C)O[Si]1(C[Si](C1)(OCC)OCC)C Chemical compound C(C)O[Si]1(C[Si](C1)(OCC)OCC)C MWUBRSFVUUPGAW-UHFFFAOYSA-N 0.000 claims description 2
- MOPZJCPPSNBMJL-UHFFFAOYSA-N C[Si](OC)(OC)C(C)(C)[Si](C)(OC)OC Chemical compound C[Si](OC)(OC)C(C)(C)[Si](C)(OC)OC MOPZJCPPSNBMJL-UHFFFAOYSA-N 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- AJLCGSKSFGAUJH-UHFFFAOYSA-N diethoxy-methyl-(1-triethoxysilylethyl)silane Chemical compound CCO[Si](C)(OCC)C(C)[Si](OCC)(OCC)OCC AJLCGSKSFGAUJH-UHFFFAOYSA-N 0.000 claims description 2
- GDTLMYWGMGSRSA-UHFFFAOYSA-N dimethoxy-methyl-(1-trimethoxysilylethyl)silane Chemical group CO[Si](C([Si](C)(OC)OC)C)(OC)OC GDTLMYWGMGSRSA-UHFFFAOYSA-N 0.000 claims description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 2
- FOQJQXVUMYLJSU-UHFFFAOYSA-N triethoxy(1-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)[Si](OCC)(OCC)OCC FOQJQXVUMYLJSU-UHFFFAOYSA-N 0.000 claims description 2
- IZRJPHXTEXTLHY-UHFFFAOYSA-N triethoxy(2-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CC[Si](OCC)(OCC)OCC IZRJPHXTEXTLHY-UHFFFAOYSA-N 0.000 claims description 2
- LMEKMHPYJBYBEV-UHFFFAOYSA-N triethoxy(2-triethoxysilylpropan-2-yl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)(C)[Si](OCC)(OCC)OCC LMEKMHPYJBYBEV-UHFFFAOYSA-N 0.000 claims description 2
- NFPDOPYDOVONOM-UHFFFAOYSA-N trimethoxy(1-trimethoxysilylethyl)silane Chemical compound CO[Si](OC)(OC)C(C)[Si](OC)(OC)OC NFPDOPYDOVONOM-UHFFFAOYSA-N 0.000 claims description 2
- NTSOKZYWAFFHMB-UHFFFAOYSA-N trimethoxy(2-trimethoxysilylpropan-2-yl)silane Chemical compound CO[Si](OC)(OC)C(C)(C)[Si](OC)(OC)OC NTSOKZYWAFFHMB-UHFFFAOYSA-N 0.000 claims description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 2
- BKEZDSPMKNQQFW-UHFFFAOYSA-N 1-diethoxysilylethyl(diethoxy)silane Chemical compound C(C)O[SiH](OCC)C(C)[SiH](OCC)OCC BKEZDSPMKNQQFW-UHFFFAOYSA-N 0.000 claims 1
- AZIOCGWAHZIFSU-UHFFFAOYSA-N 2-diethoxysilylpropan-2-yl(diethoxy)silane Chemical compound CC([SiH](OCC)OCC)([SiH](OCC)OCC)C AZIOCGWAHZIFSU-UHFFFAOYSA-N 0.000 claims 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
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- 210000002381 plasma Anatomy 0.000 description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 19
- 239000001301 oxygen Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 14
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- 238000004132 cross linking Methods 0.000 description 13
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- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
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Abstract
Description
本出願は2016年11月2日に出願された米国仮出願番号第62/416302号及び2017年10月20日に出願された米国特許出願第15/789790号の優先権を主張し、その開示は全体において参照により本開示に組み込まれる。
本発明は、概して誘電体膜の形成に関する。より具体的には、本発明は誘電材料及び低誘電率及び向上した機械的特性を有する誘電材料を含む膜並びにその製造方法に関する。
本開示に記載の組成物又は配合物及びその使用方法は、基材表面の少なくとも一部にシリコン含有膜を堆積させることにより、先行技術の問題点を克服し、このことは望ましい膜特性を提供する。
真空チャンバに式(I)及び式(II):
からなる群から選択される少なくとも1種の有機シリコン前駆体を含むガス状シリコン含有前駆体組成物を導入する工程と;
真空チャンバにおいてガス状構造形成組成物にエネルギーを適用することにより、少なくとも1種の有機シリコン前駆体の反応を誘起して基材の少なくとも一部に膜を堆積させる工程と
を含む、基材の少なくとも一部に有機シリケート膜を堆積させる方法を提供する。
真空チャンバに式(I)及び式(II):
からなる群から選択される少なくとも1種の有機シリコン前駆体を含むガス状シリコン含有組成物を導入する工程と;
真空チャンバにおいてガス状構造形成組成物にエネルギーを適用することにより、少なくとも1種の有機シリコン前駆体の反応を誘起して基材の少なくとも一部に膜を堆積させる工程と
を含む、基材の少なくとも一部に有機シリケート膜を堆積させる方法を提供する。
からなる群から選択される少なくとも1種の有機シリコン前駆体を含むガス状構造形成組成物を導入する工程と;真空チャンバにおいてガス状構造形成組成物にエネルギーを適用することにより、少なくとも1種の有機シリコン前駆体の反応を誘起して基材の少なくとも一部に膜を堆積させる工程とを含む。
例示的な膜は、種々の異なる化学前駆体及びプロセス条件からAdvance Energy200rfジェネレータを取り付けた200mmDxZ真空チャンバにおいて、Applied Materials Precision‐5000システムを用いたプラズマ増強CVDプロセスによって形成された。CVDプロセスは、概して以下の基本工程を含んでいた:ガス流の初期セットアップ及び安定化と、堆積と、ウェハ取り出しの前のチャンバのパージ/排気。ウェハを<10tоrrの圧力かつ<400℃の温度にてヘリウムガス流下で保持しつつ、広域帯UV電球を備えたFusion UVシステムを用いてUVアニールを実施した。
OSG膜は、以下のレシピを用いて堆積された:1000mg/分の1,2‐ビス(ジメトキシメチルシリル)メタンがDLIを介してチャンバに輸送され、800Wのプラズマが適用された(200sccmのHeキャリアガス流、20sccmのO2流、350ミリインチのシャワーヘッド/ウェハ間隔、350℃のウェハチャック温度、7Torrのチャンバ圧)。得られた高密度OSG膜を、次いで4分間UVアニールし、膜を機械的に向上させた。得られた膜は以下の特性を有していた:1MHzにおける誘電率は3.09であった。弾性率23.6GPa、硬度3.93GPa、632nmにおける屈折率は1.476であった。XPSにより測定された元素組成は23.0%C、43.7%O、33.3%Siであった。
OSG膜は、以下のレシピを用いて堆積された:1200mg/分の1,1,1,3,3‐ペンタメトキシ‐3‐メチル‐1,3ジシラペンタン(PMOM‐DSP)がDLIを介してチャンバに輸送され、600Wのプラズマが適用された(200sccmのHeキャリアガス流、20sccmのO2流、350ミリインチのシャワーヘッド/ウェハ間隔、400℃のウェハチャック温度、7Torrのチャンバ圧)。得られた高密度OSG膜を、次いで4分間UVアニールし、膜を機械的に向上させた。得られた膜は以下の特性を有していた:1MHzにおける誘電率は3.23であった。弾性率24.9GPa、硬度4.13GPa、632nmにおける屈折率は1.451であった。XPSにより測定された元素組成は17.6%C、48.4%O、34.2%Siであった。
OSG膜は、以下のレシピを用いて堆積された:800mg/分の1,2‐ビス(ジメトキシメチルシリル)エタン(BDMMSE)がDLIを介してチャンバに輸送され、600Wのプラズマが適用された(200sccmのHeキャリアガス流、100sccmのO2流、350ミリインチのシャワーヘッド/ウェハ間隔、325℃のウェハチャック温度、7Torrのチャンバ圧)。得られた高密度OSG膜を、次いで4分間UVアニールし、膜を機械的に向上させた。得られた膜は以下の特性を有していた:1MHzにおける誘電率は3.15であった。弾性率27.7GPa、硬度4.62GPa、632nmにおける屈折率は1.430であった。
Claims (28)
- 真空チャンバ内に基材を与える工程と;
前記真空チャンバに式(I)及び式(II):
R7はH又は‐CH3であり;
xは1又は2であり;
nは1、2、3又は4であり、nが1の場合少なくとも1つのR7は‐CH3である。)
からなる群から選択される少なくとも1種の有機シリコン前駆体を含むガス状構造形成組成物を導入する工程と;
前記真空チャンバにおいて前記ガス状構造形成組成物にエネルギーを適用することにより、前記少なくとも1種の有機シリコン前駆体の反応を誘起して前記基材の少なくとも一部に膜を堆積させる工程と
を含む、基材の少なくとも一部に有機シリケート膜を堆積させる化学気相堆積方法。 - 前記膜が2.8〜3.5の誘電率を有する、請求項1に記載の化学気相堆積方法。
- 前記エネルギーがプラズマエネルギーである、請求項1に記載の化学気相堆積方法。
- 前記膜を、UV照射を含む後処理に供する工程をさらに含む、請求項1に記載の化学気相堆積方法。
- 前記膜が2.8〜3.5の誘電率を有する、請求項4に記載の化学気相堆積方法。
- 前記膜を、熱を含む後処理に供する工程をさらに含む、請求項1に記載の化学気相堆積方法。
- UV処理が、高温、好ましくは200〜500℃にて実施される、請求項4に記載の化学気相堆積方法。
- UV処理が、O2、H2又はNH3の存在下などの反応性環境において実施される、請求項4に記載の化学気相堆積方法。
- 前記少なくとも1種の有機シリコン前駆体が、式Iの前駆体である、請求項1に記載の化学気相堆積方法。
- 前記少なくとも1種の有機シリコン前駆体が、1,1,1,3,3‐ペンタメトキシ‐2‐メチル‐1,3‐ジシラブタン(PMOM‐DSB)、1,2‐ビス(メチルジメトキシシリル)エタン、1,2‐ビス(トリメトキシシリル)エタン、1,2‐ビス(ジメトキシシリル)エタン、1,1‐ビス(トリメトキシシリル)エタン、1,1‐ビス(メチルジメトキシシリル)エタン、1,1‐ビス(ジメトキシシリル)エタン、1,1‐ジメチル‐1,1‐ビス(トリメトキシシリル)メタン、1,1‐ジメチル‐1,1‐ビス(メチルジメトキシシリル)メタン、1,1‐ジメチル‐1,1‐ビス(ジメトキシシリル)メタン、1,1,1,3,3‐ペンタエトキシ‐2‐メチル‐1,3‐ジシラブタン、1,2‐ビス(メチルジエトキシシリル)エタン、1,2‐ビス(トリエトキシシリル)エタン、1,2‐ビス(ジエトキシシリル)エタン、1,1‐ビス(トリエトキシシリル)エタン、1,1‐ビス(メチルジエトキシシリル)エタン、1,1‐ビス(ジエトキシシリル)エタン、1,1‐ジメチル‐1,1‐ビス(トリエトキシシリル)メタン、1,1‐ジメチル‐1,1‐ビス(メチルジエトキシシリル)メタン及び1,1‐ジメチル‐1,1‐ビス(ジエトキシシリル)メタンからなる群から選択される少なくとも1種の前駆体である、請求項9に記載の化学気相堆積方法。
- 前記少なくとも1種の有機シリコン前駆体が、式IIの前駆体である、請求項1に記載の化学気相堆積方法。
- 前記少なくとも1種の有機シリコン前駆体が、1,1,3,3‐テトラメトキシ‐1,3‐ジシラシクロブタン、1,3‐ジメトキシ‐1,3‐ジメチル‐1,3‐ジシラシクロブタン、1,3‐ジメトキシ‐1,3‐ジシラシクロブタン、1,3,3‐トリメトキシ‐1‐メチル‐1,3‐ジシラシクロブタン、1,3‐ジメトキシ‐1‐メチル‐ジシラシクロブタン、1,1‐ジメトキシ‐1,3‐ジシラシクロブタン、1,1,4,4‐テトラメトキシ‐1,4‐ジシラシクロヘキサン、1,4‐ジメトキシ‐1,4‐ジメチル‐1,4‐ジシラシクロヘキサン、1,4‐ジメトキシ‐1,4‐ジシラシクロヘキサン、1,4,4‐トリメトキシ‐1‐メチル‐1,4‐ジシラシクロヘキサン、1,4‐ジメトキシ‐1‐メチル‐ジシラシクロヘキサン、1,1‐ジメトキシ‐1,4‐ジシラシクロヘキサン、1,1,3,3‐テトラエトキシ‐1,3‐ジシラシクロブタン、1,3‐ジエトキシ‐1,3‐ジメチル‐1,3‐ジシラシクロブタン、1,3‐ジエトキシ‐1,3‐ジシラシクロブタン、1,3,3‐トリエトキシ‐1‐メチル‐1,3‐ジシラシクロブタン、1,3‐ジエトキシ‐1‐メチル‐ジシラシクロブタン、1,1‐ジエトキシ‐1,3‐ジシラシクロブタン、1,1,4,4‐テトラエトキシ‐1,4‐ジシラシクロヘキサン、1,4‐ジエトキシ‐1,4‐ジメチル‐1,4‐ジシラシクロヘキサン、1,4‐ジエトキシ‐1,4‐ジシラシクロヘキサン、1,4,4‐トリエトキシ‐1‐メチル‐1,4‐ジシラシクロヘキサン、1,4‐ジエトキシ‐1‐メチル‐ジシラシクロヘキサン及び1,1‐ジエトキシ‐1,4‐ジシラシクロヘキサンからなる群から選択される少なくとも1種の前駆体である、請求項11に記載の化学気相堆積方法。
- 前記少なくとも1種の有機シリコン前駆体が、ハロゲン化物イオン、Al3+イオン、Fe2+イオン、Fe3+イオン、Ni2+イオン及びCr3+イオンを含まない、請求項1に記載の化学気相堆積方法。
- 前記ハロゲン化物イオンが、塩化物、フッ化物、臭化物及びヨウ化物を含む、請求項13に記載の化学気相堆積方法。
- 化学気相堆積条件が、プラズマ増強化学気相堆積条件である、請求項1に記載の化学気相堆積方法。
- 化学気相堆積条件が、熱化学気相堆積条件である、請求項1に記載の化学気相堆積方法。
- 前記基材がシリコンウェハである、請求項1に記載の化学気相堆積方法。
- 前記層間誘電膜が、Si‐‐O‐‐C、Si‐‐O‐‐Si、Si‐‐C、Si‐‐F、Si‐‐H、C‐‐O、C‐‐H及びC‐‐Fから選択される結合型の1つ又はそれより多くを有する、請求項1に記載の化学気相堆積方法。
- 化学気相堆積条件が、O2、O3、H2O2、N2O及びこれらの混合物からなる群から選択される酸化剤の使用を含む、請求項1に記載の化学気相堆積方法。
- 化学気相堆積条件が、酸化剤の使用を除外する、請求項1に記載の化学気相堆積方法。
- 化学気相堆積条件が、ヘリウム、ネオン、アルゴン、クリプトン、キセノン、窒素からなる群から選択される1種又はそれより多くの不活性ガスの使用を含む、請求項1に記載の化学気相堆積方法。
- 1種又はそれより多くの反応性物質が、ガス状又は液体有機物質、アンモニア、水素、二酸化炭素、一酸化炭素、フルオロカーボン及びこれらの混合物からなる群から選択される、請求項1に記載の化学気相堆積方法。
- 請求項1に記載の方法により形成された膜。
- 1.8g/cc又はそれより大きい密度を有する、請求項23に記載の膜。
- 2.0又はそれより大きい密度を有する、請求項24に記載の膜。
- 2.5〜3.5の誘電率及び20GPaを超えるヤング弾性率及び/又は3.5GPaを超えるナノインデンテーション硬度を有する、請求項25に記載の膜。
- 前記膜が、20GPaを超えるヤング弾性率及び/又は3.5GPaを超えるナノインデンテーション硬度を有する、請求項2に記載の方法。
- 前記膜が、20GPaを超えるヤング弾性率及び/又は3.5GPaを超えるナノインデンテーション硬度を有する、請求項4に記載の方法。
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