SG11201903903XA - Use of silyl bridged alkyl compounds for dense osg films - Google Patents

Use of silyl bridged alkyl compounds for dense osg films

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Publication number
SG11201903903XA
SG11201903903XA SG11201903903XA SG11201903903XA SG11201903903XA SG 11201903903X A SG11201903903X A SG 11201903903XA SG 11201903903X A SG11201903903X A SG 11201903903XA SG 11201903903X A SG11201903903X A SG 11201903903XA SG 11201903903X A SG11201903903X A SG 11201903903XA
Authority
SG
Singapore
Prior art keywords
international
pct
films
alkyl compounds
robert
Prior art date
Application number
SG11201903903XA
Inventor
Raymond Vrtis
Robert Ridgeway
Jennifer Lynn Achtyl
William Entley
Dino Sinatore
Kathleen Theodorou
Andrew Adamczyk
Original Assignee
Versum Materials Us Llc
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Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG11201903903XA publication Critical patent/SG11201903903XA/en

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    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

International Publication Date (19) World Intellectual Property Organization International Bureau (10) International Publication Number WO 2018/085117 Al omit °nolo omm IIIIII O IIOHDIDum° oimIE 120 100 7' 3 80 o_ 60 0 40 20 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) 11 May 2018 (11.05.2018) WIPO I PCT (51) International Patent Classification: LEY, William, Robert; 1351 S. Claiborne Avenue, Gilbert, C23C 16/40 (2006.01) C23C 16/50 (2006.01) AZ 85296 (US). SINATORE, Dino; 3322 S. Ruch Street, C23C 16/34 (2006.01) C23C 16/56 (2006.01) Whitehall, PA 18052 (US). THEODOROU, Kathleen, Es- C23C 16/32 (2006.01) C23C 16/448 (2006.01) ther; 4108 Rexford Drive, Bethlehem, PA 18020 (US). C23C 16/30 (2006.01) H01L 21/02 (21) International Application Number: (2006.01) ADAMCZYK, Andrew, J.; 19550 N. Grayhawk Drive, Unit 1018, Scottsdale, AZ 85255 (US). PCT/US2017/058577 (22) International Filing Date: 26 October 2017 (26.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/416,302 02 November 2016 (02.11.2016) US 15/789,790 20 October 2017 (20.10.2017) US (71) Applicant: VERSUM MATERIALS US, LLC [US/US]; 8555 S. River Parkway, Tempe, AZ 85284 (US). (72) Inventors: VRTIS, Raymond, Nicholas; 7820 E. Serene Street, #900, Carefree, AZ 85377 (US). RIDGEWAY, Robert, Gordon; 2255 W. Germann Road, #1055, Chan- dler, AZ 85286 (US). ACHTYL, Jennifer Lynn, Anne; 394 W. Weatherby Place, Chandler, AZ 85286 (US). ENT- (74) Agent: ROSSI, Joseph, D. et al.; Stradley Ronon Stevens & Young, LLP, 30 Valley Stream Parkway, Great Valley Corporate Center, Malvern, PA 19355 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, — (54) Title: USE OF SILYL BRIDGED ALKYL COMPOUNDS FOR DENSE OSG FILMS -4-- -CH 2- -CH(CH3)- -C(CH3)2- -CH2CH2- -ar- -C H =CH - -X- -CEC- -CH(CH3)CH2- -0- -CH3 CH3- 0 0.2 0.4 0.6 0.8 Fraction of oxygen replacement FIG. 1. Predicted Bulk Modulus for various doped amorphous Si0 systems 2 (57) : Low dielectric materials and films comprising same have been identified for improved performance when used as N interlevel dielectrics in integrated circuits as well as methods for making same. O [Continued on next page] WO 2018/085117 Al MIDEDIMOMOIDEIREIDIONIMBROHMERVOIS UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201903903XA 2016-11-02 2017-10-26 Use of silyl bridged alkyl compounds for dense osg films SG11201903903XA (en)

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