JP2008186849A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2008186849A JP2008186849A JP2007016778A JP2007016778A JP2008186849A JP 2008186849 A JP2008186849 A JP 2008186849A JP 2007016778 A JP2007016778 A JP 2007016778A JP 2007016778 A JP2007016778 A JP 2007016778A JP 2008186849 A JP2008186849 A JP 2008186849A
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- organic siloxane
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 105
- 239000003361 porogen Substances 0.000 claims abstract description 57
- 238000010894 electron beam technology Methods 0.000 claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 16
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 125000005375 organosiloxane group Chemical group 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229920000412 polyarylene Polymers 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 230000002265 prevention Effects 0.000 description 8
- YHQGMYUVUMAZJR-UHFFFAOYSA-N α-terpinene Chemical compound CC(C)C1=CC=C(C)CC1 YHQGMYUVUMAZJR-UHFFFAOYSA-N 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- WSTYNZDAOAEEKG-UHFFFAOYSA-N Mayol Natural products CC1=C(O)C(=O)C=C2C(CCC3(C4CC(C(CC4(CCC33C)C)=O)C)C)(C)C3=CC=C21 WSTYNZDAOAEEKG-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 150000001282 organosilanes Chemical class 0.000 description 3
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 2
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- YKFLAYDHMOASIY-UHFFFAOYSA-N γ-terpinene Chemical compound CC(C)C1=CCC(C)=CC1 YKFLAYDHMOASIY-UHFFFAOYSA-N 0.000 description 2
- QJXLTXJIYDKPDH-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C[SiH]1O[SiH](O[SiH](O[SiH](O1)C)C)C.C[SiH]1O[SiH](O[SiH](O[SiH](O1)C)C)C QJXLTXJIYDKPDH-UHFFFAOYSA-N 0.000 description 1
- OLTHPYLQNZZLQO-UHFFFAOYSA-N C1(=CC=CC=C1)[SiH](C)C.C1(=CC=CC=C1)[SiH](C)C Chemical compound C1(=CC=CC=C1)[SiH](C)C.C1(=CC=CC=C1)[SiH](C)C OLTHPYLQNZZLQO-UHFFFAOYSA-N 0.000 description 1
- XNTBIQIBQBGAJV-UHFFFAOYSA-N C[SiH2]C.C[SiH2]C Chemical compound C[SiH2]C.C[SiH2]C XNTBIQIBQBGAJV-UHFFFAOYSA-N 0.000 description 1
- QQOWLTBPEOELDD-UHFFFAOYSA-N C[SiH](C)C.C[SiH](C)C Chemical compound C[SiH](C)C.C[SiH](C)C QQOWLTBPEOELDD-UHFFFAOYSA-N 0.000 description 1
- BNRPJHDNLUMDMY-UHFFFAOYSA-N C[SiH](OCC)OCC.C[SiH](OCC)OCC Chemical compound C[SiH](OCC)OCC.C[SiH](OCC)OCC BNRPJHDNLUMDMY-UHFFFAOYSA-N 0.000 description 1
- RVGXAJSCPRTPPR-UHFFFAOYSA-N C[Si](C)(C)C.C[Si](C)(C)C Chemical compound C[Si](C)(C)C.C[Si](C)(C)C RVGXAJSCPRTPPR-UHFFFAOYSA-N 0.000 description 1
- CXYAFFSHJZNAKZ-UHFFFAOYSA-N C[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)C.C[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)C Chemical compound C[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)C.C[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)C CXYAFFSHJZNAKZ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- MXTFOMCDBDNXOY-UHFFFAOYSA-N diethoxy(dimethyl)silane Chemical compound CCO[Si](C)(C)OCC.CCO[Si](C)(C)OCC MXTFOMCDBDNXOY-UHFFFAOYSA-N 0.000 description 1
- SOGIFFQYRAXTDR-UHFFFAOYSA-N diethoxy(methyl)silane Chemical compound CCO[SiH](C)OCC SOGIFFQYRAXTDR-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- -1 ethylene, propylene Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- CWMFRHBXRUITQE-UHFFFAOYSA-N trimethylsilylacetylene Chemical group C[Si](C)(C)C#C CWMFRHBXRUITQE-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】半導体基板上に、炭素を主成分とするポロジェン成分を有する多孔性有機シロキサン膜21bを形成する工程と、多孔性有機シロキサン膜上に、多孔性有機シロキサン膜とは膜密度又は膜組成が異なる上層絶縁膜22を形成する工程と、多孔性有機シロキサン膜及び上層絶縁膜に電子線又は紫外線を照射して、多孔性有機シロキサン膜中のポロジェン成分の重合反応を促進させる工程とを備える。
【選択図】 図3
Description
13…銅配線 14…拡散防止膜
21a…有機シロキサン膜 21b、21c…多孔性有機シロキサン膜
22…有機シロキサン膜(上層絶縁膜)
24…ヴィアプラグ 25…銅配線 26…拡散防止膜
28…有機絶縁膜 29…拡散防止膜
110…ウェハ 111…チャンバ
112…下部電極 113…上部電極
120…ウェハ 121…チャンバ
122…ウェハステージ 123…電子線発生部
Claims (5)
- 半導体基板上に、炭素を主成分とするポロジェン成分を有する多孔性有機シロキサン膜を形成する工程と、
前記多孔性有機シロキサン膜上に、前記多孔性有機シロキサン膜とは膜密度又は膜組成が異なる上層絶縁膜を形成する工程と、
前記多孔性有機シロキサン膜及び前記上層絶縁膜に電子線又は紫外線を照射して、前記多孔性有機シロキサン膜中のポロジェン成分の重合反応を促進させる工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記多孔性有機シロキサン膜を形成する工程は、
シリコン、酸素及び炭素を主成分とする主骨格成分と、炭素を主成分とするポロジェン成分とを有する有機シロキサン膜を形成する工程と、
前記有機シロキサン膜に電子線又は紫外線を照射して、前記ポロジェン成分の一部を除去する工程と、
を備えることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記多孔性有機シロキサン膜を形成する工程は、
シリコン、酸素及び炭素を主成分とする主骨格成分を有する予備的な多孔性有機シロキサン膜を形成する工程と、
前記予備的な多孔性有機シロキサン膜中に炭素を主成分とするポロジェン成分を導入する工程と、
を備えることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記上層絶縁膜は、前記電子線又は紫外線を照射した後の膜密度が1.2g/cm3以上の有機シロキサン膜からなる
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記上層絶縁膜は、無機シロキサン膜、SiCH膜、SiCNH膜、又はポリアリーレン膜からなる
ことを特徴とする請求項1に記載の半導体装置の製造方法。
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US12/020,353 US7569498B2 (en) | 2007-01-26 | 2008-01-25 | Manufacturing method of semiconductor device |
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JP2010171081A (ja) * | 2009-01-20 | 2010-08-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2017534173A (ja) * | 2014-10-15 | 2017-11-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマ損傷保護のための多層誘電体スタック |
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EP3068561B1 (en) | 2013-11-11 | 2019-08-14 | United Technologies Corporation | Refractory metal core finishing technique |
KR102616489B1 (ko) | 2016-10-11 | 2023-12-20 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
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JP2006190962A (ja) * | 2004-12-09 | 2006-07-20 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2006237349A (ja) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | 半導体装置の製造方法 |
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TW550642B (en) | 2001-06-12 | 2003-09-01 | Toshiba Corp | Semiconductor device with multi-layer interconnect and method fabricating the same |
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US7208389B1 (en) * | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
US20040197474A1 (en) | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
JP4257252B2 (ja) | 2004-04-01 | 2009-04-22 | 株式会社東芝 | 半導体装置の製造方法 |
US7332445B2 (en) | 2004-09-28 | 2008-02-19 | Air Products And Chemicals, Inc. | Porous low dielectric constant compositions and methods for making and using same |
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JP2006190962A (ja) * | 2004-12-09 | 2006-07-20 | Fujitsu Ltd | 半導体装置の製造方法 |
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JP2010171081A (ja) * | 2009-01-20 | 2010-08-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2017534173A (ja) * | 2014-10-15 | 2017-11-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマ損傷保護のための多層誘電体スタック |
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US20080194117A1 (en) | 2008-08-14 |
TW200901319A (en) | 2009-01-01 |
US7569498B2 (en) | 2009-08-04 |
JP5142538B2 (ja) | 2013-02-13 |
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