JP2012510726A - 酸素含有前駆体を用いる誘電体バリアの堆積 - Google Patents
酸素含有前駆体を用いる誘電体バリアの堆積 Download PDFInfo
- Publication number
- JP2012510726A JP2012510726A JP2011539598A JP2011539598A JP2012510726A JP 2012510726 A JP2012510726 A JP 2012510726A JP 2011539598 A JP2011539598 A JP 2011539598A JP 2011539598 A JP2011539598 A JP 2011539598A JP 2012510726 A JP2012510726 A JP 2012510726A
- Authority
- JP
- Japan
- Prior art keywords
- film
- dielectric film
- barrier
- precursor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 72
- 239000002243 precursor Substances 0.000 title claims abstract description 55
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 239000001301 oxygen Substances 0.000 title claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 12
- 230000008021 deposition Effects 0.000 title description 39
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000000151 deposition Methods 0.000 claims abstract description 45
- 239000001257 hydrogen Substances 0.000 claims abstract description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 28
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- 239000001307 helium Substances 0.000 claims description 14
- 229910052734 helium Inorganic materials 0.000 claims description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 11
- NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical group CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- DRUOQOFQRYFQGB-UHFFFAOYSA-N ethoxy(dimethyl)silicon Chemical compound CCO[Si](C)C DRUOQOFQRYFQGB-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 claims description 2
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 claims description 2
- CBRIQVFXGOWUJI-UHFFFAOYSA-N ethoxy(ethyl)silicon Chemical compound CCO[Si]CC CBRIQVFXGOWUJI-UHFFFAOYSA-N 0.000 claims description 2
- ZZRGHKUNLAYDTC-UHFFFAOYSA-N ethoxy(methyl)silane Chemical compound CCO[SiH2]C ZZRGHKUNLAYDTC-UHFFFAOYSA-N 0.000 claims description 2
- OUHONEIDEVTEIG-UHFFFAOYSA-N ethyl(methoxy)silane Chemical compound CC[SiH2]OC OUHONEIDEVTEIG-UHFFFAOYSA-N 0.000 claims description 2
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 claims description 2
- 238000009616 inductively coupled plasma Methods 0.000 claims description 2
- XPDGHGYGTJOTBC-UHFFFAOYSA-N methoxy(methyl)silicon Chemical compound CO[Si]C XPDGHGYGTJOTBC-UHFFFAOYSA-N 0.000 claims description 2
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- MBGQQKKTDDNCSG-UHFFFAOYSA-N ethenyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(C=C)OCC MBGQQKKTDDNCSG-UHFFFAOYSA-N 0.000 claims 1
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 claims 1
- CVZTYTBFQPBMFS-UHFFFAOYSA-N ethoxy(prop-2-enyl)silane Chemical compound CCO[SiH2]CC=C CVZTYTBFQPBMFS-UHFFFAOYSA-N 0.000 claims 1
- OAXJMVOONZMXSS-UHFFFAOYSA-N methoxy(prop-2-enyl)silane Chemical compound CO[SiH2]CC=C OAXJMVOONZMXSS-UHFFFAOYSA-N 0.000 claims 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 3
- 230000009977 dual effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 115
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 229910018540 Si C Inorganic materials 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 4
- UUAHJDYTCBLNOM-UHFFFAOYSA-N 1-ethoxy-1-methylsilolane Chemical compound CCO[Si]1(C)CCCC1 UUAHJDYTCBLNOM-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012705 liquid precursor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- -1 Hydrogen radicals Chemical class 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005383 fluoride glass Substances 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
銅要素の形成前の、誘電体フィルムを有する集積回路基材を与えるステップ;
次の式のバリア誘電体フィルム前駆体と、該基材とを接触させるステップ:
RxR’y(OR’’)z(OR’’’)aSi
(式中、R、R’’及びR’’’は、メチル、エチル、及びビニルからなる群よりそれぞれ独立して選択され;R’は、水素、メチル、エチル、及びビニルからなる群より選択され;且つx、z及びaは、それぞれ独立して1〜3であり、そしてyは、0〜2であり、x+y+z+a=4である);
プラズマ支援化学気相成長を用いて基材にバリア誘電体フィルムを形成するステップ。
銅要素の形成前の、誘電体フィルムを有する集積回路基材を与えるステップ;
ジエトキシメチルシラン、ジメチルジエトキシシラン及びこれらの混合物からなる群より選択されるバリア誘電体フィルム前駆体、並びに水素、ヘリウム、アンモニア及びこれらの混合物からなる群より選択される化学物質を、該基材と接触させるステップ:
100℃〜400℃の範囲の温度でのプラズマ支援化学気相成長を用いて該基材にバリア誘電体フィルムを形成するステップ;
銅要素を該バリア誘電体フィルム上に形成するステップ。
Pr:反応チャンバー圧力(Pa)
Ps:標準的な雰囲気圧力(Pa)
Tr:反応ガスの平均温度(K)
Ts:標準的な温度(K)
rw:ケイ素基材の半径(m)
D:ケイ素基材と上部電極との間隔(m)
F:反応ガスの合計流量(sccm)
ジメチルジエトキシシランを、表2の推奨条件の下で堆積させた。そして、12分の広域の紫外線(例えば、Fusion H+ bulb)に露光した。この堆積を、ヘリウム、水素、及びアンモニアを用いて、3回行った。図7が示すように、生成フィルムを、続くフィルム処理の間に後にUV照射にさらす時の、ジメチルジエトキシシランを堆積させる場合は、水素又はアンモニアのドーパントガスを用いることで、誘電率(k)の変化を、最小化させることができた。このプロセスから製造された材料、及びこのプロセス条件の使用は、様々な用途で、例えばICの製造で使用するために、フィルム特性をより受け入れやすくすると期待される。
いくつかの製造手順では、比較的高い基材温度及びチャンバー温度での堆積が好ましい。この例では、ジメチルジエトキシシランを、800mg/分の流量で液体前駆体として使用し、ヘリウムを、200sccmの流量でキャリアガスとして使用し、且つ水素を、150sccmの流量で反応ガスとして加えた。堆積チャンバーを、400℃で維持し、誘電体フィルムを、ケイ素基材上に堆積させた。比較的高い操作温度を考えて、水素対前駆体の比を、非常に低く設定した。これは、プラズマに加えられた比較的高い熱エネルギーに起因している。表4に示すように、誘電率4.0で密度1.8g/cc超である目標のフィルムを、堆積条件の変更によって得ることができた。これらのフィルムに、堆積後にUV安定性試験を行い、20分までの露光の長いUV硬化時間でも、誘電率がごくわずかな変化しか示さないことがわかった。
Claims (30)
- 次のステップを含む、基材にフィルムを形成させる方法:
次の式の直鎖アルキルアルコキシシラン前駆体を与えるステップ:
RxR’y(OR’’)z(OR’’’)aSi
(式中、R、R’’及びR’’’は、メチル、エチル、及びビニルからなる群よりそれぞれ独立して選択され;R’は、水素、メチル、エチル、及びビニルからなる群より選択され;且つx、z及びaは、それぞれ独立して1〜3であり、そしてyは、0〜2であり、x+y+z+a=4である);
前記前駆体の化学気相成長反応を用いて基材にフィルムを形成するステップ、ここで前記反応での前記前駆体の流れの滞留時間が、85ミリ秒以下であり、前記フィルムの密度が1.5g/cc超であり、且つ誘電率が6.0未満である。 - 前記接触させるステップの間に、ヘリウム、アルゴン、二酸化炭素、窒素、アンモニア、水素、酸素及びこれらの混合物からなる群より選択される追加の化学物質を与える、請求項1に記載の方法。
- 前記フィルムが、拡散バリアとなる、請求項1に記載の方法。
- 前記前駆体が、ジエトキシメチルシラン、ジメチルエトキシシラン、ジメチルジエトキシシラン、ジエチルジエトキシシラン、ジメチルジメトキシシラン、メチルジエトキシシラン、メチルエトキシシラン、メチルメトキシシラン、エチルエトキシシラン、エチルメトキシシラン、メチルトリエトキシシラン、エチルトリエトキシシラン、メチルトリメトキシシラン、メチルトリメトキシシラン、エチルトリメトキシシラン、ビニルメチルジエトキシシラン、ビニルメチルエトキシシラン、ビニルメチルジメトキシシラン、ビニルメチルメトキシシラン及びこれらの混合物からなる群より選択される、請求項1に記載の方法。
- 前記基材の温度が、100℃〜500℃である、請求項1に記載の方法。
- 前記基材の温度が、150℃〜400℃である、請求項1に記載の方法。
- 前記基材の温度が、250℃〜350℃である、請求項1に記載の方法。
- 前記化学気相成長反応が、プラズマ、パルスプラズマ、ヘリコンプラズマ、高密度プラズマ、誘導結合プラズマ、及びリモートプラズマからなる群より選択される、プラズマ支援化学気相成長である、請求項1に記載の方法。
- 前記フィルムの形成後に、前記基材をUV照射にさらす、請求項1に記載の方法。
- 前記形成したフィルムが、1.8g/cc超の密度を有する、請求項1に記載の方法。
- 前記形成したフィルムが、1.5超の屈折率を有する、請求項1に記載の方法。
- 前記滞留時間が、20〜65ミリ秒である、請求項1に記載の方法。
- 前記誘電率が、3.2〜6.0の範囲である、請求項1に記載の方法。
- 前記誘電率が、3.2〜4.2の範囲である、請求項1に記載の方法。
- 前記バリア誘電体フィルムが、0.3超の密度対誘電率の比を有する、請求項1に記載の方法。
- 前記バリア誘電体フィルムが、0.5超の密度対誘電率の比を有する、請求項1に記載の方法。
- 次のステップを含む、集積回路の誘電体フィルムと銅要素との間にバリア誘電体フィルムを形成する方法:
銅要素の形成前の、誘電体フィルムを有する集積回路基材を与えるステップ;
ジエトキシメチルシラン、ジメチルジエトキシシラン及びこれらの混合物からなる群より選択されるバリア誘電体フィルム前駆体、並びに水素、アンモニア及びこれらの混合物からなる群より選択される化学物質を、前記基材と接触させるステップ:
プラズマ支援化学気相成長反応を用いて、前記基材にバリア誘電体フィルムを形成するステップ、ここで前記反応での前記前駆体及び前記化学物質の流れの滞留時間が、85ミリ秒以下である;
前記バリア誘電体フィルムに銅要素を形成するステップ;
ここで、結果として得られるバリア誘電体フィルムは、1.5g/cc超の密度を有する。 - 前記バリア誘電体フィルムを堆積させた後に、銅要素を前記バリア誘電体上に堆積させる、請求項17に記載の方法。
- 前記バリア誘電体フィルムを、続いてUV照射にさらす、請求項17に記載の方法。
- 前記バリア誘電体フィルムが、酸炭化ケイ素である、請求項17に記載の方法。
- 前記バリア誘電体フィルムが、6未満の誘電率を有する、請求項17に記載の方法。
- 前記バリア誘電体フィルムが、3.2超の誘電率を有する、請求項21に記載の方法。
- 前記バリア誘電体フィルムが、4.2未満の誘電率を有する、請求項21に記載の方法。
- 前記バリア誘電体フィルムが、3.2〜4.2の範囲で誘電率を有する、請求項17に記載の方法。
- 次のステップを含む、集積回路の誘電体フィルムと銅要素との間にバリア誘電体フィルムを形成する方法:
銅要素を有する誘電体フィルムを有する集積回路基材を与えるステップ;
前記銅要素を酸化から保護することができる界面層を、前記銅要素を有する誘電体フィルムに堆積させるステップ;
ジエトキシメチルシラン、ジメチルジエトキシシラン、及びこれらの混合物からなる群より選択されるバリア誘電体フィルム前駆体、並びに水素、アンモニア、及びこれらの混合物からなる群より選択される化学物質を、基材と接触させるステップ;
前記バリア誘電体前駆体のプラズマ支援化学気相成長反応を用いて、バリア誘電体フィルムを前記基材に形成するステップ、ここで前記反応での前記前駆体の流れの滞留時間は85ミリ秒以下である;
ここで、結果として得られるバリア誘電体フィルムは、1.5g/cc超の密度を有する。 - 前記界面層が、CoWPである、請求項25に記載の方法。
- 前記形成したフィルムが、1.5超の屈折率を有する、請求項25に記載の方法。
- 前記滞留時間が、20〜65ミリ秒である、請求項25に記載の方法。
- 前記フィルムが、3.2〜6.0の範囲で誘電率を有する、請求項25に記載の方法。
- 前記誘電率が、3.2〜4.2の範囲である、請求項29に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11876908P | 2008-12-01 | 2008-12-01 | |
US61/118,769 | 2008-12-01 | ||
PCT/US2009/065867 WO2010065410A1 (en) | 2008-12-01 | 2009-11-25 | Dielectric barrier deposition using oxygen containing precursor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012510726A true JP2012510726A (ja) | 2012-05-10 |
JP5567588B2 JP5567588B2 (ja) | 2014-08-06 |
Family
ID=41571526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011539598A Active JP5567588B2 (ja) | 2008-12-01 | 2009-11-25 | 酸素含有前駆体を用いる誘電体バリアの堆積 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8637396B2 (ja) |
EP (1) | EP2376672B1 (ja) |
JP (1) | JP5567588B2 (ja) |
KR (1) | KR101406154B1 (ja) |
CN (2) | CN104593747B (ja) |
TW (1) | TWI439565B (ja) |
WO (1) | WO2010065410A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018201037A (ja) * | 2014-06-16 | 2018-12-20 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | アルキルアルコキシシラ環状化合物及びそれを用いた膜の堆積方法 |
JP7465287B2 (ja) | 2019-06-08 | 2024-04-10 | アプライド マテリアルズ インコーポレイテッド | 自己形成バリア層を備えた低誘電率誘電体 |
JP7465256B2 (ja) | 2018-08-29 | 2024-04-10 | アプライド マテリアルズ インコーポレイテッド | 非uv高硬度低kの膜堆積 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9410245B2 (en) * | 2010-12-28 | 2016-08-09 | Kirin Beer Kabushiki Kaisha | Gas-barrier plastic molded product and manufacturing process therefor |
JP5781350B2 (ja) * | 2011-03-30 | 2015-09-24 | リンテック株式会社 | ガスバリア積層体、その製造方法、電子デバイス用部材及び電子デバイス |
CN107275309B (zh) | 2011-12-20 | 2021-02-09 | 英特尔公司 | 保形低温密闭性电介质扩散屏障 |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
CN103871961B (zh) * | 2012-12-17 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及其制造方法 |
US9362107B2 (en) * | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
KR102378021B1 (ko) * | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
US9837270B1 (en) * | 2016-12-16 | 2017-12-05 | Lam Research Corporation | Densification of silicon carbide film using remote plasma treatment |
US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
CN114875388A (zh) | 2017-05-05 | 2022-08-09 | Asm Ip 控股有限公司 | 用于受控形成含氧薄膜的等离子体增强沉积方法 |
US10910216B2 (en) | 2017-11-28 | 2021-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low-k dielectric and processes for forming same |
KR20230085954A (ko) | 2018-10-19 | 2023-06-14 | 램 리써치 코포레이션 | 갭 충진 (gapfill) 을 위한 도핑되거나 도핑되지 않은 실리콘 카바이드 증착 및 원격 수소 플라즈마 노출 |
US11594409B2 (en) * | 2020-02-28 | 2023-02-28 | Applied Materials, Inc. | Systems and methods for depositing low-k dielectric films |
WO2022245742A1 (en) * | 2021-05-19 | 2022-11-24 | Versum Materials Us, Llc | New precursors for depositing films with high elastic modulus |
WO2023096270A1 (ko) * | 2021-11-26 | 2023-06-01 | 솔브레인 주식회사 | 고유전율 박막용 가리움제, 이를 이용한 선택영역증착 방법, 이로부터 제조된 반도체 기판 및 반도체 소자 |
WO2023249418A1 (ko) * | 2022-06-21 | 2023-12-28 | 성균관대학교산학협력단 | 중합체 박막, 이를 이용한 확산 방지막 및 그 제조 방법 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000174019A (ja) * | 1998-12-01 | 2000-06-23 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2001203200A (ja) * | 2000-01-18 | 2001-07-27 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2002134502A (ja) * | 2000-10-18 | 2002-05-10 | Asm Japan Kk | 半導体基板上のシリコン重合体絶縁膜及び膜を形成する方法 |
JP2002256434A (ja) * | 2001-01-17 | 2002-09-11 | Air Products & Chemicals Inc | 低誘電率層間絶縁膜の形成方法 |
JP2004274052A (ja) * | 2003-03-04 | 2004-09-30 | Air Products & Chemicals Inc | Uv照射による高密度及び多孔質有機ケイ酸塩材料の機械的強化 |
JP2005064516A (ja) * | 2003-08-14 | 2005-03-10 | Asm Japan Kk | 低誘電率を有するシリコン系絶縁膜の形成方法及び装置 |
JP2005072584A (ja) * | 2003-08-20 | 2005-03-17 | Asm Japan Kk | 低誘電率及び低膜応力を有するシリコン系絶縁膜を形成する方法 |
JP2006332676A (ja) * | 2005-05-27 | 2006-12-07 | Asm Japan Kk | 誘電率が低いナノ粒子膜の製造方法 |
JP2008263097A (ja) * | 2007-04-13 | 2008-10-30 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3000782A1 (de) * | 1980-01-10 | 1981-07-16 | Wacker-Chemie GmbH, 8000 München | Verfahren zur kontinuierlichen herstellung von sioc-gruppen aufweisenden silanen oder sioc-gruppen aufweisenden polysiloxanen |
CA2048168A1 (en) * | 1990-08-03 | 1992-02-04 | John T. Felts | Silicon oxide based thin film vapour barriers |
US6432846B1 (en) * | 1999-02-02 | 2002-08-13 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US20060258176A1 (en) * | 1998-02-05 | 2006-11-16 | Asm Japan K.K. | Method for forming insulation film |
US7064088B2 (en) * | 1998-02-05 | 2006-06-20 | Asm Japan K.K. | Method for forming low-k hard film |
TW437017B (en) * | 1998-02-05 | 2001-05-28 | Asm Japan Kk | Silicone polymer insulation film on semiconductor substrate and method for formation thereof |
US6383955B1 (en) * | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US6068884A (en) * | 1998-04-28 | 2000-05-30 | Silcon Valley Group Thermal Systems, Llc | Method of making low κ dielectric inorganic/organic hybrid films |
US6159871A (en) * | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
US6875687B1 (en) * | 1999-10-18 | 2005-04-05 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
US6258735B1 (en) * | 2000-10-05 | 2001-07-10 | Applied Materials, Inc. | Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber |
US6583048B2 (en) * | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
US7098149B2 (en) * | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
US20040197474A1 (en) * | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
JP2005294333A (ja) * | 2004-03-31 | 2005-10-20 | Semiconductor Process Laboratory Co Ltd | 成膜方法及び半導体装置 |
US7622400B1 (en) * | 2004-05-18 | 2009-11-24 | Novellus Systems, Inc. | Method for improving mechanical properties of low dielectric constant materials |
US7229934B2 (en) * | 2004-10-18 | 2007-06-12 | International Business Machines Corporation | Porous organosilicates with improved mechanical properties |
US20060115980A1 (en) * | 2004-11-30 | 2006-06-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for decreasing a dielectric constant of a low-k film |
US7314828B2 (en) * | 2005-07-19 | 2008-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Repairing method for low-k dielectric materials |
DE102006051496B4 (de) * | 2006-10-31 | 2008-09-25 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit einem porösen Materialschichtstapel mit kleinem ε mit reduzierter UV-Empfindlichkeit und Verfahren zu dessen Herstellung |
US7521358B2 (en) * | 2006-12-26 | 2009-04-21 | Lam Research Corporation | Process integration scheme to lower overall dielectric constant in BEoL interconnect structures |
US20080173985A1 (en) * | 2007-01-24 | 2008-07-24 | International Business Machines Corporation | Dielectric cap having material with optical band gap to substantially block uv radiation during curing treatment, and related methods |
US7847402B2 (en) * | 2007-02-20 | 2010-12-07 | International Business Machines Corporation | BEOL interconnect structures with improved resistance to stress |
-
2009
- 2009-11-23 US US12/623,998 patent/US8637396B2/en active Active
- 2009-11-25 CN CN201410712726.8A patent/CN104593747B/zh active Active
- 2009-11-25 WO PCT/US2009/065867 patent/WO2010065410A1/en active Application Filing
- 2009-11-25 CN CN200980148388.7A patent/CN102232125B/zh active Active
- 2009-11-25 EP EP09764148.4A patent/EP2376672B1/en active Active
- 2009-11-25 JP JP2011539598A patent/JP5567588B2/ja active Active
- 2009-11-25 KR KR1020117015317A patent/KR101406154B1/ko active IP Right Grant
- 2009-12-01 TW TW098141063A patent/TWI439565B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000174019A (ja) * | 1998-12-01 | 2000-06-23 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2001203200A (ja) * | 2000-01-18 | 2001-07-27 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2002134502A (ja) * | 2000-10-18 | 2002-05-10 | Asm Japan Kk | 半導体基板上のシリコン重合体絶縁膜及び膜を形成する方法 |
JP2002256434A (ja) * | 2001-01-17 | 2002-09-11 | Air Products & Chemicals Inc | 低誘電率層間絶縁膜の形成方法 |
JP2004274052A (ja) * | 2003-03-04 | 2004-09-30 | Air Products & Chemicals Inc | Uv照射による高密度及び多孔質有機ケイ酸塩材料の機械的強化 |
JP2005064516A (ja) * | 2003-08-14 | 2005-03-10 | Asm Japan Kk | 低誘電率を有するシリコン系絶縁膜の形成方法及び装置 |
JP2005072584A (ja) * | 2003-08-20 | 2005-03-17 | Asm Japan Kk | 低誘電率及び低膜応力を有するシリコン系絶縁膜を形成する方法 |
JP2006332676A (ja) * | 2005-05-27 | 2006-12-07 | Asm Japan Kk | 誘電率が低いナノ粒子膜の製造方法 |
JP2008263097A (ja) * | 2007-04-13 | 2008-10-30 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018201037A (ja) * | 2014-06-16 | 2018-12-20 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | アルキルアルコキシシラ環状化合物及びそれを用いた膜の堆積方法 |
JP2021073704A (ja) * | 2014-06-16 | 2021-05-13 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | アルキルアルコキシシラ環状化合物及びそれを用いた膜の堆積方法 |
JP7032266B2 (ja) | 2014-06-16 | 2022-03-08 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | アルキルアルコキシシラ環状化合物及びそれを用いた膜の堆積方法 |
JP7465256B2 (ja) | 2018-08-29 | 2024-04-10 | アプライド マテリアルズ インコーポレイテッド | 非uv高硬度低kの膜堆積 |
JP7465287B2 (ja) | 2019-06-08 | 2024-04-10 | アプライド マテリアルズ インコーポレイテッド | 自己形成バリア層を備えた低誘電率誘電体 |
Also Published As
Publication number | Publication date |
---|---|
EP2376672B1 (en) | 2019-06-05 |
JP5567588B2 (ja) | 2014-08-06 |
TW201022466A (en) | 2010-06-16 |
KR20110094205A (ko) | 2011-08-22 |
WO2010065410A1 (en) | 2010-06-10 |
CN102232125A (zh) | 2011-11-02 |
CN104593747B (zh) | 2019-05-28 |
KR101406154B1 (ko) | 2014-06-12 |
EP2376672A1 (en) | 2011-10-19 |
US20100136789A1 (en) | 2010-06-03 |
CN104593747A (zh) | 2015-05-06 |
US8637396B2 (en) | 2014-01-28 |
CN102232125B (zh) | 2015-01-28 |
TWI439565B (zh) | 2014-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5567588B2 (ja) | 酸素含有前駆体を用いる誘電体バリアの堆積 | |
KR101144535B1 (ko) | 전구체 함유 질소를 사용한 유전 장벽 증착 | |
JP4090740B2 (ja) | 集積回路の作製方法および集積回路 | |
US6649540B2 (en) | Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film | |
US7422776B2 (en) | Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD) | |
TW201823159A (zh) | 漸變或多層矽碳化物膜之基於遠端電漿的沉積 | |
US20110206857A1 (en) | Ultra low dielectric materials using hybrid precursors containing silicon with organic functional groups by plasma-enhanced chemical vapor deposition | |
TW201623669A (zh) | 用於選擇性的超低介電常數封孔之可流動介電質 | |
US7855123B2 (en) | Method of integrating an air gap structure with a substrate | |
WO2008147689A1 (en) | Boron nitride and boron nitride-derived materials deposition method | |
KR20110013574A (ko) | 층간 부착 개선 방법 | |
US20020137323A1 (en) | Metal ion diffusion barrier layers | |
CN102047411B (zh) | 半导体装置及其制造方法 | |
JP2005045058A (ja) | 銅拡散バリア性絶縁膜の形成方法およびその絶縁膜 | |
TWI822044B (zh) | 用於氣相沉積一介電膜的組合物及用於沉積一有機矽膜的方法 | |
TW202217051A (zh) | 烷氧基二矽氧烷及由其製造的密有機二氧化矽膜 | |
KR20220160071A (ko) | 고 탄성 계수를 갖는 막들을 증착하기 위한 신규한 전구체들 | |
JPWO2010067395A1 (ja) | 半導体装置の製造方法及びその製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120921 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121002 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121227 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130402 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130730 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131030 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140520 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140619 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5567588 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |