JP7032266B2 - アルキルアルコキシシラ環状化合物及びそれを用いた膜の堆積方法 - Google Patents
アルキルアルコキシシラ環状化合物及びそれを用いた膜の堆積方法 Download PDFInfo
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- JP7032266B2 JP7032266B2 JP2018155192A JP2018155192A JP7032266B2 JP 7032266 B2 JP7032266 B2 JP 7032266B2 JP 2018155192 A JP2018155192 A JP 2018155192A JP 2018155192 A JP2018155192 A JP 2018155192A JP 7032266 B2 JP7032266 B2 JP 7032266B2
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- Prior art keywords
- methyl
- silacyclopentane
- group
- isopropoxy
- ethoxy
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- 125000001072 heteroaryl group Chemical group 0.000 claims description 11
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- AYLOVPLFPXTLAL-UHFFFAOYSA-N 1-methyl-1-propan-2-yloxysilolane Chemical compound CC(C)O[Si]1(C)CCCC1 AYLOVPLFPXTLAL-UHFFFAOYSA-N 0.000 claims description 7
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- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229930006739 camphene Natural products 0.000 description 1
- ZYPYEBYNXWUCEA-UHFFFAOYSA-N camphenilone Natural products C1CC2C(=O)C(C)(C)C1C2 ZYPYEBYNXWUCEA-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000003508 chemical denaturation Methods 0.000 description 1
- FXMNVBZEWMANSQ-UHFFFAOYSA-N chloro(silyl)silane Chemical compound [SiH3][SiH2]Cl FXMNVBZEWMANSQ-UHFFFAOYSA-N 0.000 description 1
- 125000004803 chlorobenzyl group Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- URYYVOIYTNXXBN-UPHRSURJSA-N cyclooctene Chemical compound C1CCC\C=C/CC1 URYYVOIYTNXXBN-UPHRSURJSA-N 0.000 description 1
- 239000004913 cyclooctene Substances 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- LDLDYFCCDKENPD-UHFFFAOYSA-N ethenylcyclohexane Chemical compound C=CC1CCCCC1 LDLDYFCCDKENPD-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012025 fluorinating agent Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- NFCGJSHYYNOKEM-UHFFFAOYSA-N iodo($l^{1}-silanyl)silicon Chemical compound [Si][Si]I NFCGJSHYYNOKEM-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 230000001035 methylating effect Effects 0.000 description 1
- POCNHGFJLGYFIK-UHFFFAOYSA-N methylcyclooctane Chemical compound CC1CCCCCCC1 POCNHGFJLGYFIK-UHFFFAOYSA-N 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000005244 neohexyl group Chemical group [H]C([H])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- PHICBFWUYUCFKS-UHFFFAOYSA-N spiro[4.4]nonane Chemical compound C1CCCC21CCCC2 PHICBFWUYUCFKS-UHFFFAOYSA-N 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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Description
本出願は2014年6月16日に出願された米国仮出願番号第62/012,724号の優先権及び利益を主張し、その全体を参照することにより本明細書中に取り込む。
反応チャンバに基材を提供すること、
反応チャンバに気体試薬を導入すること、ここで、該気体試薬は下記式Iを有するアルキルアルコキシシラ環状化合物を構造形成性前駆体として含み、
反応チャンバ中の気体試薬にエネルギーを加え、気体試薬の反応を誘導して、基材上に予備膜を堆積させること、ここで、予備膜はポロゲンを含む、及び、
予備膜から実質的にすべてのポロゲンを除去し、細孔を有しそして2.7より低い誘電率を有する多孔性膜を提供すること、
を含む。特定の実施形態において、構造形成性前駆体は硬化剤をさらに含む。
例としては、シクロヘキサン、1,2,4-トリメチルシクロヘキサン、1-メチル-4-(1-メチルエチル)シクロヘキサン、シクロオクタン、メチルシクロオクタン、メチルシクロヘキサンなどが挙げられる。
例としては、エチレン、プロピレン、アセチレン、ネオヘキサン、1,3-ブタジエン、2-メチル-1,3-ブタジエン、2,3-ジメチル-2,3-ブタジエン、置換ジエンなどが挙げられる。
例としては、パラ-シメン、シクロオクテン、1,5-シクロオクタジエン、ジメチルシクロオクタジエン、シクロヘキセン、ビニルシクロヘキサン、ジメチルシクロヘキセン、α-テルピネン、ピネン、リモネン、ビニルシクロヘキセンなどが挙げられる。
例としては、ノルボルナン、スピロ-ノナン、デカヒドロナフタレンなどが挙げられる。
例としては、カンフェン、ノルボルネン、ノルボルナジエン、5-エチリデン-2-ノルボルネンなどが挙げられる。
例としては、アダマンタンが挙げられる。
構造形成剤DEMS及びポロゲン前駆体シクロオクタンの複合材層を200mm処理のための以下のプロセス条件を用いて堆積した。シクロオクタンの流速960ミリグラム/分(mg/分)及び、240mg/分で、200標準立方センチメートル(sccm)のCO2キャリアガス流、10sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、275℃のウエハチャンク温度、600Wプラズマが課された8トルチャンバ圧を用いて、前駆体を反応チャンバに直接液体注入(DLI)により輸送した。その後、得られた膜をUVアニールしてシクロオクタンポロゲンを除去し、そして膜を機械的に向上させた。膜の種々の属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量%炭素(%C))を上記のように得た。表1に提供する。
構造形成剤DEMS及びポロゲン前駆体シクロオクタンの複合材層を200mm処理のための以下のプロセス条件を用いて堆積した。シクロオクタンの流速1120ミリグラム/分(mg/分)及び、280mg/分で、200標準立方センチメートル(sccm)のCO2キャリアガス流、20sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、250℃のウエハチャンク温度、700Wプラズマが課された8トルチャンバ圧を用いて、前駆体を反応チャンバに直接液体注入(DLI)により輸送した。その後、得られた膜をUVアニールしてシクロオクタンポロゲンを除去し、そして膜を機械的に向上させた。膜の種々の属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量%炭素(%C))を上記のように得た。表1に提供する。
構造形成剤MESCAP及びポロゲン前駆体シクロオクタンの複合材層を200mm処理のための以下のプロセス条件を用いて堆積した。シクロオクタンの流速960mg/分及び、MESCAP240mgmで、200標準立方センチメートル(sccm)のCO2キャリアガス流、20sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、250℃のウエハチャンク温度、600Wプラズマが課された8トルチャンバ圧を用いて、前駆体を反応チャンバに直接液体注入(DLI)により輸送した。その後、得られた膜をUVアニールしてポロゲンを除去し、そして膜を機械的に向上させた。膜の種々の属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量%炭素(%C))を上記のように得た。表1に提供する。
構造形成剤MPSCAP及びポロゲン前駆体シクロオクタンの複合材層を200mm処理のための以下のプロセス条件を用いて堆積した。シクロオクタンの流速840mg/分及び、MPSCAP360mgmで、200標準立方センチメートル(sccm)のCO2キャリアガス流、20sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、250℃のウエハチャンク温度、700Wプラズマが課された8トルチャンバ圧を用いて、前駆体を反応チャンバに直接液体注入(DLI)により輸送した。その後、得られた膜をUVアニールしてポロゲンを除去し、そして膜を機械的に向上させた。膜の種々の属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量%炭素(%C))を上記のように得た。表1に提供する。
特定の実験は300mmウエハ処理を用い、Applied Materials Producer(登録商標) SEで行った。上記の200mm処理と同様に、PECVDプロセスは、一般に、以下の基本工程: ガス流の初期設定及び安定化、シリコンウエハ基材上の膜の堆積、及び、基材取り出しの前のチャンバのパージ/排気を含んだ。300mm堆積を、TEOSフェースプレート(AMAT部品番号: 0040-95475)を含むProducer(登録商標)SE Twin 低kチャンバで行った。チャンバはAdvanced Energy APEX 3013 RF 発生器(ツインチャンバ毎に2つ)を備えている。Producerでのすべての堆積に関して、ヘリウムをキャリアガスとして用いた。Producer(登録商標) SE 低kチャンバからの堆積されたままの膜を、Producer(登録商標) SE NanoCure(商標)UV チャンバで、アルゴン下に、<10トルの1種以上の圧力及び≦400℃の1種以上の台座セット温度でUV-硬化させた。実験をp-型Siウエハ(抵抗率範囲=8~12Ohm-cm)で行った。
Claims (19)
- 化学蒸着(CVD)法のための誘電体膜堆積組成物であって、
式Iを有する少なくとも1種のアルキルアルコキシシラ環状化合物、
該化合物は、不純物を100ppm未満しか含まない、および、
硬化剤を含み、そして、
該組成物は、気体試薬として反応して、基材上に該膜を堆積させることができる、
組成物。 - 前記硬化剤はテトラエトキシシランを含む、請求項1記載の組成物。
- 前記アルキルアルコキシシラ環状化合物は1-メチル-1-メトキシ-1-シラシクロペンタン、1-メチル-1-エトキシ-1-シラシクロペンタン、1-メチル-1-イソプロポキシ-1-シラシクロペンタン、1-メチル-1-プロポキシ-1-シラシクロペンタン、1-メトキシ-1-シラシクロペンタン、1-エトキシ-1-シラシクロペンタン、1-メチル-1-メトキシ-1-シラシクロブタン、1-メチル-1-エトキシ-1-シラシクロブタン、1-メトキシ-1-シラシクロブタン、1-エトキシ-1-シラシクロブタン、1-メチル-1-メトキシ-1-シラシクロヘキサン、1-メチル-1-エトキシ-1-シラシクロヘキサン、1-メチル-1-メトキシ-1-シラシクロヘキサン、1-メチル-1-エトキシ-1-シラシクロヘキサン、1-メチル-1-イソプロポキシ-1-シラシクロペンタン、1-メチル-1-イソプロポキシ-1-シラシクロブタン、1-メチル-1-イソプロポキシ-1-シラシクロヘキサン、1-イソプロポキシ-1-シラシクロペンタン、1-イソプロポキシ-1-シラシクロブタン、1-イソプロポキシ-1-シラシクロヘキサン及びそれらの組み合わせからなる群より選ばれる少なくとも1種を含む、請求項1記載の組成物。
- 前記不純物は塩化物イオンを含む、請求項3記載の組成物。
- 前記アルキルアルコキシシラ環状化合物は、1-メチル-1-エトキシ-1-シラシクロペンタンを含む、請求項3記載の組成物。
- 少なくとも1種のポロゲンを更に含む、請求項1記載の組成物。
- 少なくとも1種の酸化剤を更に含む、請求項1記載の組成物。
- 少なくとも1種の不活性ガスを更に含む、請求項1記載の組成物。
- 前記膜がオルガノシリケートガラスを含む、請求項1記載の組成物。
- 前記膜が2.7以下の誘電率を有する、請求項1記載の組成物。
- 化学蒸着(CVD)法のための誘電体膜堆積組成物であって、
式Iを有する少なくとも1種のアルキルアルコキシシラ環状化合物、
硬化剤を含む、
組成物。 - 少なくとも1種のポロゲンを更に含む、請求項11記載の組成物。
- 前記アルキルアルコキシシラ環状化合物は1-メチル-1-メトキシ-1-シラシクロペンタン、1-メチル-1-エトキシ-1-シラシクロペンタン、1-メチル-1-イソプロポキシ-1-シラシクロペンタン、1-メチル-1-プロポキシ-1-シラシクロペンタン、1-メトキシ-1-シラシクロペンタン、1-エトキシ-1-シラシクロペンタン、1-メチル-1-メトキシ-1-シラシクロブタン、1-メチル-1-エトキシ-1-シラシクロブタン、1-メトキシ-1-シラシクロブタン、1-エトキシ-1-シラシクロブタン、1-メチル-1-メトキシ-1-シラシクロヘキサン、1-メチル-1-エトキシ-1-シラシクロヘキサン、1-メチル-1-メトキシ-1-シラシクロヘキサン、1-メチル-1-エトキシ-1-シラシクロヘキサン、1-メチル-1-イソプロポキシ-1-シラシクロペンタン、1-メチル-1-イソプロポキシ-1-シラシクロブタン、1-メチル-1-イソプロポキシ-1-シラシクロヘキサン、1-イソプロポキシ-1-シラシクロペンタン、1-イソプロポキシ-1-シラシクロブタン、1-イソプロポキシ-1-シラシクロヘキサン及びそれらの組み合わせからなる群より選ばれる少なくとも1種を含む、請求項12記載の組成物。
- 前記アルキルアルコキシシラ環状化合物は、1-メチル-1-エトキシ-1-シラシクロペンタンを含む、請求項13記載の組成物。
- 前記アルキルアルコキシシラ環状化合物は、1-メチル-1-イソプロポキシ-1-シラシクロペンタンを含む、請求項13記載の組成物。
- 前記アルキルアルコキシシラ環状化合物は、1-メチル-1-プロポキシ-1-シラシクロペンタンを含む、請求項13記載の組成物。
- 前記硬化剤はテトラメトキシシランを含む、請求項16記載の組成物。
- 1-メチル-1-エトキシ-1-シラシクロペンタン、1-メチル-1-イソプロポキシ-1-シラシクロペンタン、および1-メチル-1-プロポキシ-1-シラシクロペンタンからなる群から選ばれる少なくとも1種、ならびに硬化剤を含む、化学蒸着(CVD)法のための誘電体膜堆積組成物。
- 少なくとも1種のポロゲンを更に含む、請求項18記載の組成物。
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EP2958135B1 (en) | 2018-03-28 |
TWI597380B (zh) | 2017-09-01 |
SG10201504707WA (en) | 2016-01-28 |
US20150364321A1 (en) | 2015-12-17 |
KR20150144284A (ko) | 2015-12-24 |
TW201741485A (zh) | 2017-12-01 |
JP2016005001A (ja) | 2016-01-12 |
US9922818B2 (en) | 2018-03-20 |
US10395920B2 (en) | 2019-08-27 |
EP2958135A1 (en) | 2015-12-23 |
CN105177524A (zh) | 2015-12-23 |
KR102183028B1 (ko) | 2020-11-25 |
TWI649445B (zh) | 2019-02-01 |
EP3358602A1 (en) | 2018-08-08 |
US20180233355A1 (en) | 2018-08-16 |
KR20170130328A (ko) | 2017-11-28 |
JP2018201037A (ja) | 2018-12-20 |
TW201600625A (zh) | 2016-01-01 |
KR101800819B1 (ko) | 2017-12-21 |
JP6426538B2 (ja) | 2018-11-21 |
JP2021073704A (ja) | 2021-05-13 |
CN105177524B (zh) | 2019-08-02 |
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