SG10201504707WA - Alkyl-alkoxysilacyclic compounds and methods for depositing films using same - Google Patents

Alkyl-alkoxysilacyclic compounds and methods for depositing films using same

Info

Publication number
SG10201504707WA
SG10201504707WA SG10201504707WA SG10201504707WA SG10201504707WA SG 10201504707W A SG10201504707W A SG 10201504707WA SG 10201504707W A SG10201504707W A SG 10201504707WA SG 10201504707W A SG10201504707W A SG 10201504707WA SG 10201504707W A SG10201504707W A SG 10201504707WA
Authority
SG
Singapore
Prior art keywords
alkyl
methods
same
depositing films
alkoxysilacyclic
Prior art date
Application number
SG10201504707WA
Inventor
Nicholas Vrtis Raymond
Gordon Ridgeway Robert
Li Jianheng
Robert Entley William
Lynn Anne Achtyl Jennifer
Lei Xinjian
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201504707WA publication Critical patent/SG10201504707WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG10201504707WA 2014-06-16 2015-06-15 Alkyl-alkoxysilacyclic compounds and methods for depositing films using same SG10201504707WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462012724P 2014-06-16 2014-06-16
US14/732,250 US9922818B2 (en) 2014-06-16 2015-06-05 Alkyl-alkoxysilacyclic compounds

Publications (1)

Publication Number Publication Date
SG10201504707WA true SG10201504707WA (en) 2016-01-28

Family

ID=53433091

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201504707WA SG10201504707WA (en) 2014-06-16 2015-06-15 Alkyl-alkoxysilacyclic compounds and methods for depositing films using same

Country Status (7)

Country Link
US (2) US9922818B2 (en)
EP (2) EP3358602A1 (en)
JP (3) JP6426538B2 (en)
KR (2) KR101800819B1 (en)
CN (1) CN105177524B (en)
SG (1) SG10201504707WA (en)
TW (2) TWI597380B (en)

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US20190134663A1 (en) * 2017-10-27 2019-05-09 Versum Materials Us, Llc Silacyclic Compounds and Methods for Depositing Silicon-Containing Films Using Same
US10978293B2 (en) 2018-03-28 2021-04-13 Meidensha Corporation Oxide film formation method
KR102555932B1 (en) * 2018-06-15 2023-07-13 버슘머트리얼즈 유에스, 엘엘씨 Siloxane Compositions and Methods of Using the Compositions to Deposit Silicon-Containing Films
WO2019246061A1 (en) * 2018-06-19 2019-12-26 Versum Materials Us, Llc Silicon compounds and methods for depositing films using same
KR102373339B1 (en) * 2018-08-10 2022-03-10 버슘머트리얼즈 유에스, 엘엘씨 Silicon compound and method for depositing film using same
CN116288249A (en) * 2018-08-10 2023-06-23 弗萨姆材料美国有限责任公司 Silicon compound and method for depositing film using silicon compound
US11043374B2 (en) * 2018-08-24 2021-06-22 Versum Materials Us, Llc Silacycloalkane compounds and methods for depositing silicon containing films using same
US20200165727A1 (en) * 2018-11-27 2020-05-28 Versum Materials Us, Llc 1-Methyl-1-Iso-Propoxy-Silacycloalkanes And Dense Organosilica Films Made Therefrom
JP7110090B2 (en) * 2018-12-28 2022-08-01 東京エレクトロン株式会社 Substrate processing method and substrate processing system
US11462397B2 (en) * 2019-07-31 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
JP6993394B2 (en) * 2019-08-06 2022-02-21 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー Silicon compounds and methods of depositing films using silicon compounds
KR20220061161A (en) * 2019-09-13 2022-05-12 버슘머트리얼즈 유에스, 엘엘씨 Monoalkoxysilane and dialkoxysilane and high-density organosilica film prepared therefrom
EP4110969A4 (en) 2020-03-31 2023-10-18 Versum Materials US, LLC New precursors for depositing films with high elastic modulus
JP2023542352A (en) * 2020-09-22 2023-10-06 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー Additives that improve the properties of dielectric films

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Also Published As

Publication number Publication date
KR101800819B1 (en) 2017-12-21
TWI649445B (en) 2019-02-01
TWI597380B (en) 2017-09-01
US9922818B2 (en) 2018-03-20
JP2018201037A (en) 2018-12-20
KR20170130328A (en) 2017-11-28
JP6426538B2 (en) 2018-11-21
JP7032266B2 (en) 2022-03-08
US20150364321A1 (en) 2015-12-17
JP2016005001A (en) 2016-01-12
US20180233355A1 (en) 2018-08-16
EP2958135A1 (en) 2015-12-23
US10395920B2 (en) 2019-08-27
EP3358602A1 (en) 2018-08-08
CN105177524B (en) 2019-08-02
KR102183028B1 (en) 2020-11-25
JP2021073704A (en) 2021-05-13
KR20150144284A (en) 2015-12-24
EP2958135B1 (en) 2018-03-28
CN105177524A (en) 2015-12-23
TW201600625A (en) 2016-01-01
TW201741485A (en) 2017-12-01

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