JP2006265350A - 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 - Google Patents
多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 Download PDFInfo
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- JP2006265350A JP2006265350A JP2005084206A JP2005084206A JP2006265350A JP 2006265350 A JP2006265350 A JP 2006265350A JP 2005084206 A JP2005084206 A JP 2005084206A JP 2005084206 A JP2005084206 A JP 2005084206A JP 2006265350 A JP2006265350 A JP 2006265350A
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- BRGJIIMZXMWMCC-UHFFFAOYSA-N tetradecan-2-ol Chemical compound CCCCCCCCCCCCC(C)O BRGJIIMZXMWMCC-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- VBSUMMHIJNZMRM-UHFFFAOYSA-N triethoxy(2-phenylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC1=CC=CC=C1 VBSUMMHIJNZMRM-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- XVYIJOWQJOQFBG-UHFFFAOYSA-N triethoxy(fluoro)silane Chemical compound CCO[Si](F)(OCC)OCC XVYIJOWQJOQFBG-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- NKLYMYLJOXIVFB-UHFFFAOYSA-N triethoxymethylsilane Chemical compound CCOC([SiH3])(OCC)OCC NKLYMYLJOXIVFB-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- UBMUZYGBAGFCDF-UHFFFAOYSA-N trimethoxy(2-phenylethyl)silane Chemical compound CO[Si](OC)(OC)CCC1=CC=CC=C1 UBMUZYGBAGFCDF-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- TUQLLQQWSNWKCF-UHFFFAOYSA-N trimethoxymethylsilane Chemical compound COC([SiH3])(OC)OC TUQLLQQWSNWKCF-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- XMUJIPOFTAHSOK-UHFFFAOYSA-N undecan-2-ol Chemical compound CCCCCCCCCC(C)O XMUJIPOFTAHSOK-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
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Abstract
【解決手段】 式:Si(OR1)4及びRa(Si)(OR2)4−a(式中、R1は1価の有機基を表し、Rは水素原子、フッ素原子又は1価の有機基を表し、R2は1価の有機基を表し、aは1〜3の整数であり、R、R1及びR2は同一であっても異なっていてもよい)で示される化合物から選ばれた少なくとも1種の化合物と、250℃以上で熱分解を示す熱分解性有機化合物と、触媒作用をなす元素と、有機溶媒とからなる多孔質膜の前駆体組成物。この前駆体組成物の溶液を用いて疎水性化合物と気相重合反応せしめ、多孔質膜を作製する。この多孔質膜を用いた半導体装置。
【選択図】 なし
Description
さらに、触媒としてPtを用いてシロキサンの反応を促進することが知られている(例えば、特許文献6参照)。この場合、対象は、耐熱セラミックスにおける疎水性であり、Naを初めとする含有不純物の有無等、半導体用層間絶縁薄膜としての多孔質膜とは本質的に異なる。
Si(OR1)4 (1)
で示される化合物(A)、及び次の一般式(2):
Ra(Si)(OR2)4−a (2)
で示される化合物(B)(上記式(1)及び(2)中、R1は1価の有機基を表し、Rは水素原子、フッ素原子又は1価の有機基を表し、R2は1価の有機基を表し、aは1〜3の整数であり、R、R1及びR2は同一であっても異なっていてもよい。)から選ばれた少なくとも1種の化合物と、250℃以上で熱分解を示す熱分解性有機化合物(C)と、電気陰性度が2.5以下である両性元素、イオン半径が1.6Å以上の元素及び原子量が130以上である元素から選ばれた少なくとも1種の元素(D)とを含有することを特徴とする。
Si(OR1)4 (1)
で示される化合物(A)、及び次の一般式(2):
Ra(Si)(OR2)4−a (2)
で示される化合物(B)(上記式(1)及び(2)中、R1は1価の有機基を表し、Rは水素原子、フッ素原子又は1価の有機基を表し、R2は1価の有機基を表し、aは1〜3の整数であり、R、R1及びR2は同一であっても異なっていてもよい。)から選ばれた少なくとも1種の化合物と、250℃以上で熱分解を示す熱分解性有機化合物(C)と、電気陰性度が2.5以下である両性元素、イオン半径が1.6Å以上の元素及び原子量が130以上である元素から選ばれた少なくとも1種の元素(D)又はこの元素(D)を含む少なくとも1種の化合物とを有機溶媒中で混合することを特徴とする。
Si(OR1)4 (1)
で示される化合物(A)、及び次の一般式(2):
Ra(Si)(OR2)4−a (2)
で示される化合物(B)(上記式(1)及び(2)中、R1は1価の有機基を表し、Rは水素原子、フッ素原子又は1価の有機基を表し、R2は1価の有機基を表し、aは1〜3の整数であり、R、R1及びR2は同一であっても異なっていてもよい。)で示される化合物から選ばれた少なくとも1種の化合物と、200〜5000の分子量を有し、250℃以上で熱分解を示す界面活性剤を含む熱分解性有機化合物(C)と、特定のポーリングの電気陰性度、イオン半径、原子量を有する元素から選ばれた少なくとも1種の元素(D)と、有機溶媒とを含有する前駆体組成物の溶液から作製される。
上記一般式(1)及び(2)でそれぞれ示される化合物(A)及び(B)において、R、R1及びR2の1価の有機基には、アルキル基、アリール基、アリル基、グリシジル基等が含まれる。
本発明で用いることができる有機溶媒としては、例えば、メタノール、エタノール、n−プロパノール、i−プロパノール、n−ブタノール、i−ブタノール、sec−ブタノール、t−ブタノール、n−ペンタノール、i−ペンタノール、2−メチルブタノール、sec−ペンタノール、t−ペンタノール、3−メトキシブタノール、n−ヘキサノール、2−メチルペンタノール、sec−ヘキサノール、2−エチルブタノール、sec−ヘプタノール、ヘプタノール−3、n−オクタノール、2−エチルヘキサノール、sec−オクタノール、n−ノニルアルコール、2,6−ジメチルヘプタノール−4、n−デカノール、sec−ウンデシルアルコール、トリメチルノニルアルコール、sec−テトラデシルアルコール、sec−ヘプタデシルアルコール、フェノール、シクロヘキサノール、メチルシクロヘキサノール、3,3,5−トリメチルシクロヘキサノール、ベンジルアルコール、フェニルメチルカルビノール、ジアセトンアルコール、クレゾール等のモノアルコール系溶媒;
本発明において、前駆体組成物溶液中で用いることができる触媒は、少なくとも1種類以上の酸性触媒又は塩基性触媒である。
本発明における前駆体組成物の溶液中で用いることができる界面活性剤は、分子量が小さい場合には、形成される空孔が小さく、空孔形成後の気相反応において対象化合物が十分に空孔内へ浸透しにくく、また、分子量が大きい場合には、形成される空孔が大きくなりすぎるため、例えば、分子量200〜5000の範囲内のものであれば、特に制限されることはない。好ましくは、例えば、以下の界面活性剤を挙げることができる。
CnH2n+1(N(CH3)2(CH2)m)a(CH2)bN(CH3)2CLH2L+1X(1+a)
(上記一般式中、aは0〜2の整数であり、bは0〜4の整数であり、nは8〜24の整数であり、mは0〜12の整数であり、Lは1〜24の整数であり、Xはハロゲン化物イオン、HSO4 −又は1価の有機アニオンを表す。)で示されるアルキルアンモニウム塩の使用が好ましい。a、b、n、m、Lがこの範囲内であり、Xがこのようなイオンであれば、形成される空孔が適当な大きさとなり、空孔形成後の気相反応において対象化合物が十分に空孔内へ浸透し、目的とする重合反応が生じる。
本発明で用いる添加元素(D)については、上記したように、本発明における気相重合反応の促進という観点から、SiO2中の非架橋酸素を増加させることが重要である。多孔質膜の基本骨格であるSi−Oにおいて非架橋酸素を増加させ、気相重合反応を促進させる場合に、ポーリングの電気陰性度がSiのもつ1.8よりも大きい元素、例えば酸素は3.5、炭素は2.5をもつため、Si−Oと場合によってはSi−C結合を持つ多孔質膜において、これ以上の電気陰性度を持つものは共有結合を持ちやすいので、Siとイオン結合を作ることにより非架橋酸素を増加させて、金属元素による触媒作用を促進させようという本発明の目的を達成するには適さない。また、この時、多孔質膜中に含有される金属元素には、どのような応力、特に電気的応力が印加されても膜中に安定に存在するといった性質や、あるいはその多孔質膜が適用される対象物において、例えば半導体装置において多孔質膜以外の要素に悪影響を与えないといった性質が求められる。このとき含まれる元素が通常の金属元素の場合、半導体の性能そのものに悪影響を与えてしまうため、適切ではない。しかしながら、半導体に悪影響を与えない元素、例えば金属ではあっても、両性元素であるAl、Zn、Sn、Pb等であれば、既に半導体装置でも使用例があり、この限りではない。また、多孔質膜に多少の電気的応力が加わっても移動しにくいイオン半径1.6Å以上の大きな元素、また、原子量では130以上、具体的には周期律表における第6周期に分類される重い元素(原子番号55以上の元素)であれば、特に金属元素であっても問題ない。
本発明において用いることができる疎水性化合物は、炭素数1〜6のアルキル基又はC6H5基からなる疎水性基と、水素原子、OH基又はハロゲン原子からなる重合可能性基とを、それぞれ、少なくとも1つずつ有する化合物であることが好ましい。このアルキル基としては、メチル基、エチル基、プロピル基、ブチル基等を挙げることができ、これらのアルキル基は鎖状でも、分岐していてもよく、さらに水素原子がフッ素原子等に置換されていてもよい。ハロゲン原子は、フッ素、塩素、臭素、ヨウ素から選ばれる。
H2O:脱金属処理された抵抗値18MΩ以上の純水。
有機溶媒:エタノール(和光純薬製、電子工業グレード)。
界面活性剤:ポリ(アルキレンオキサイド)ブロックコポリマー、HO(CH2CH2O)13(CH2CH(CH3)O)20(CH2CH2O)13H(第一工業社製、商品名:エパン)を上記の電子工業用エタノールに溶解した後、脱金属処理を施したもの。
シリル化剤:1,3,5,7−テトラメチルシクロテトラシロキサン(トリケミカル社製、電子工業グレード)。
膜厚、屈折率:分光エリプソメトリー(SOPRA社製、GES5)を使用して測定。
誘電率:水銀プローブ測定法(SSM社製、SSM2000)を使用して測定。
機械的強度:ナノインデンテイター(MTS Systems Corporation 製、Nano Indenter DCM)を使用して測定。
Claims (15)
- 次の一般式(1):
Si(OR1)4 (1)
で示される化合物(A)、及び次の一般式(2):
Ra(Si)(OR2)4−a (2)
で示される化合物(B)
(上記式(1)及び(2)中、R1は1価の有機基を表し、Rは水素原子、フッ素原子又は1価の有機基を表し、R2は1価の有機基を表し、aは1〜3の整数であり、R、R1及びR2は同一であっても異なっていてもよい。)
から選ばれた少なくとも1種の化合物と、250℃以上で熱分解を示す熱分解性有機化合物(C)と、電気陰性度が2.5以下である両性元素、イオン半径が1.6Å以上の元素及び原子量が130以上である元素から選ばれた少なくとも1種の元素(D)とを含有することを特徴とする多孔質膜の前駆体組成物。 - 前記熱分解性有機化合物が、分子量200〜5000の界面活性剤を少なくとも1種含んでいることを特徴とする請求項1記載の多孔質膜の前駆体組成物。
- 前記前駆体組成物中に含まれる前記元素(D)以外の金属イオン不純物が、10ppb以下であることを特徴とする請求項1又は2に記載の多孔質膜の前駆体組成物。
- 前記元素(D)が、B、Al、P、Zn、GA、Ge、As、Se、In、Sn、Sb、Te、Rb、Cs、Ba、La、Hf、Ta、W、Re、Os、Ir、Pt、Au、Hg、Tl、Pb、Bi、Po、At、及びランタノイドからなる群から選ばれた少なくとも1種の元素であることを特徴とする請求項1〜3のいずれかに記載の多孔質膜の前駆体組成物。
- 次の一般式(1):
Si(OR1)4 (1)
で示される化合物(A)、及び次の一般式(2):
Ra(Si)(OR2)4−a (2)
で示される化合物(B)
(上記式(1)及び(2)中、R1は1価の有機基を表し、Rは水素原子、フッ素原子又は1価の有機基を表し、R2は1価の有機基を表し、aは1〜3の整数であり、R、R1及びR2は同一であっても異なっていてもよい。)
から選ばれた少なくとも1種の化合物と、250℃以上で熱分解を示す熱分解性有機化合物(C)と、電気陰性度が2.5以下である両性元素、イオン半径が1.6Å以上の元素及び原子量が130以上である元素から選ばれた少なくとも1種の元素(D)又はこの元素(C)を含む少なくとも1種の化合物とを有機溶媒中で混合することを特徴とする多孔質膜の前駆体組成物の調製方法。 - 次の一般式(1):
Si(OR1)4 (1)
で示される化合物(A)、及び次の一般式(2):
Ra(Si)(OR2)4−a (2)
で示される化合物(B)
(上記式(1)及び(2)中、R1は1価の有機基を表し、Rは水素原子、フッ素原子又は1価の有機基を表し、R2は1価の有機基を表し、aは1〜3の整数であり、R、R1及びR2は同一であっても異なっていてもよい。)
から選ばれた少なくとも1種の化合物と、250℃以上で熱分解を示す熱分解性有機化合物(C)とを有機溶媒中で混合し、得られた混合液に、電気陰性度が2.5以下である両性元素、イオン半径が1.6Å以上の元素及び原子量が130以上である元素から選ばれた少なくとも1種の元素(D)又はこの元素(D)を含む少なくとも1種の化合物を添加し、混合することを特徴とする多孔質膜の前駆体組成物の調製方法。 - 前記熱分解性有機化合物が、分子量200〜5000の界面活性剤を少なくとも1種含んでいることを特徴とする請求項5又は6記載の多孔質膜の前駆体組成物の調製方法。
- 前記前駆体組成物中に含まれる前記元素(D)以外の金属イオン不純物が、10ppb以下であることを特徴とする請求項5〜7のいずれかに記載の多孔質膜の前駆体組成物の調製方法。
- 前記元素(D)が、B、Al、P、Zn、GA、Ge、As、Se、In、Sn、Sb、Te、Rb、Cs、Ba、La、Hf、Ta、W、Re、Os、Ir、Pt、Au、Hg、Tl、Pb、Bi、Po、At、及びランタノイドからなる群から選ばれた少なくとも1種の元素であることを特徴とする請求項5〜3のいずれかに記載の多孔質膜の前駆体組成物の調製方法。
- 請求項1〜4のいずれかに記載の多孔質膜の前駆体組成物又は請求項5〜9のいずれかに記載の調製方法により調製された多孔質膜の前駆体組成物を用いて基板上に成膜し、これを250℃以上で熱処理して、前駆体組成物中の熱分解性有機化合物を熱分解せしめ、多孔質膜を作製することを特徴とする多孔質膜の作製方法。
- 請求項10記載の作製方法により作製された多孔質膜に対し、疎水基及び重合可能性基から選ばれた少なくとも1種の基を持つ疎水性化合物を、100〜600℃の温度範囲で気相反応させ、多孔質膜を改質することを特徴とする多孔質膜の作製方法。
- 前記疎水性化合物が、炭素数1〜6のアルキル基又はC6H5基からなる疎水性基と、水素原子、OH基又はハロゲン原子からなる重合可能性基とを、それぞれ、少なくとも1種ずつ有する化合物であることを特徴とする請求項11記載の多孔質膜の作製方法。
- 前記疎水性化合物が、Si−X−Si(Xは酸素原子、NR3基、CnH2n又はC6H4を表し、R3はCmH2m+1又はC6H5を表し、nは1又は2であり、mは1〜6の整数である。)の結合単位を少なくとも1種、かつ、Si−A(Aは水素原子、OH基、OCbH2b+1又はハロゲン原子を表し、同一分子内のAは同じでも異なっていても良く、bは1〜6の整数である。)の結合単位を少なくとも2種有する有機ケイ素化合物であることを特徴とする請求項11記載の多孔質膜の作製方法。
- 請求項10〜13のいずれかに記載の多孔質膜の作製方法に従って得られた多孔質膜。
- 請求項10〜13のいずれかに記載の多孔質膜の作製方法に従って得られた多孔質膜を用いて得られた半導体装置。
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JP2010090389A (ja) * | 2008-04-02 | 2010-04-22 | Mitsui Chemicals Inc | 組成物及びその製造方法、多孔質材料及びその形成方法、層間絶縁膜、半導体材料、半導体装置、並びに低屈折率表面保護膜 |
JP4598876B2 (ja) * | 2008-04-02 | 2010-12-15 | 三井化学株式会社 | 組成物の製造方法、多孔質材料及びその形成方法、層間絶縁膜、半導体材料、半導体装置、並びに低屈折率表面保護膜 |
JPWO2009123104A1 (ja) * | 2008-04-02 | 2011-07-28 | 三井化学株式会社 | 組成物の製造方法、多孔質材料及びその形成方法、層間絶縁膜、半導体材料、半導体装置、並びに低屈折率表面保護膜 |
KR101220029B1 (ko) | 2008-04-02 | 2013-01-21 | 미쓰이 가가쿠 가부시키가이샤 | 조성물 및 그 제조 방법, 다공질 재료 및 그 형성 방법, 층간 절연막, 반도체 재료, 반도체 장치, 및 저굴절률 표면 보호막 |
US8603588B2 (en) | 2008-04-02 | 2013-12-10 | Mitsui Chemicals, Inc. | Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film |
WO2011052656A1 (ja) * | 2009-10-27 | 2011-05-05 | 株式会社 アルバック | 多孔質膜の前駆体組成物及び多孔質膜の成膜方法 |
WO2011052657A1 (ja) * | 2009-10-27 | 2011-05-05 | 株式会社 アルバック | 多孔質膜の前駆体組成物及び多孔質膜の成膜方法 |
JPWO2011052656A1 (ja) * | 2009-10-27 | 2013-03-21 | 株式会社アルバック | 多孔質膜の前駆体組成物及び多孔質膜の成膜方法 |
JP2014144551A (ja) * | 2013-01-28 | 2014-08-14 | Asahi Glass Co Ltd | 撥水膜付き基体および輸送機器用物品 |
Also Published As
Publication number | Publication date |
---|---|
TW200641994A (en) | 2006-12-01 |
US20090053503A1 (en) | 2009-02-26 |
KR100956046B1 (ko) | 2010-05-06 |
HK1117187A1 (en) | 2009-01-09 |
CN101146874A (zh) | 2008-03-19 |
TWI400754B (zh) | 2013-07-01 |
EP1867687A1 (en) | 2007-12-19 |
EP1867687B1 (en) | 2013-06-12 |
KR20070107788A (ko) | 2007-11-07 |
JP4894153B2 (ja) | 2012-03-14 |
EP1867687A4 (en) | 2009-06-03 |
EP1867687B9 (en) | 2013-09-18 |
WO2006101027A1 (ja) | 2006-09-28 |
CN101146874B (zh) | 2012-08-15 |
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