JP2003338178A5 - - Google Patents

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Publication number
JP2003338178A5
JP2003338178A5 JP2002144869A JP2002144869A JP2003338178A5 JP 2003338178 A5 JP2003338178 A5 JP 2003338178A5 JP 2002144869 A JP2002144869 A JP 2002144869A JP 2002144869 A JP2002144869 A JP 2002144869A JP 2003338178 A5 JP2003338178 A5 JP 2003338178A5
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JP
Japan
Prior art keywords
internal
voltage
node
circuit
signal
Prior art date
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Granted
Application number
JP2002144869A
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English (en)
Japanese (ja)
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JP2003338178A (ja
JP4386619B2 (ja
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Application filed filed Critical
Priority claimed from JP2002144869A external-priority patent/JP4386619B2/ja
Priority to JP2002144869A priority Critical patent/JP4386619B2/ja
Priority to US10/427,968 priority patent/US6954103B2/en
Priority to TW092112838A priority patent/TWI222639B/zh
Priority to CNB2006101425409A priority patent/CN100550185C/zh
Priority to CNB03136750XA priority patent/CN100505093C/zh
Priority to KR1020030031801A priority patent/KR100545422B1/ko
Priority to DE10322733A priority patent/DE10322733A1/de
Priority to CNB2006101425396A priority patent/CN100550184C/zh
Publication of JP2003338178A publication Critical patent/JP2003338178A/ja
Publication of JP2003338178A5 publication Critical patent/JP2003338178A5/ja
Publication of JP4386619B2 publication Critical patent/JP4386619B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002144869A 2002-05-20 2002-05-20 半導体装置 Expired - Lifetime JP4386619B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002144869A JP4386619B2 (ja) 2002-05-20 2002-05-20 半導体装置
US10/427,968 US6954103B2 (en) 2002-05-20 2003-05-02 Semiconductor device having internal voltage generated stably
TW092112838A TWI222639B (en) 2002-05-20 2003-05-12 Semiconductor device
DE10322733A DE10322733A1 (de) 2002-05-20 2003-05-20 Halbleiterspeichervorrichtung mit stabil erzeugter interner Spannung
CNB03136750XA CN100505093C (zh) 2002-05-20 2003-05-20 半导体装置
KR1020030031801A KR100545422B1 (ko) 2002-05-20 2003-05-20 반도체 장치
CNB2006101425409A CN100550185C (zh) 2002-05-20 2003-05-20 半导体装置
CNB2006101425396A CN100550184C (zh) 2002-05-20 2003-05-20 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002144869A JP4386619B2 (ja) 2002-05-20 2002-05-20 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008178216A Division JP2008310951A (ja) 2008-07-08 2008-07-08 半導体装置

Publications (3)

Publication Number Publication Date
JP2003338178A JP2003338178A (ja) 2003-11-28
JP2003338178A5 true JP2003338178A5 (enExample) 2005-10-06
JP4386619B2 JP4386619B2 (ja) 2009-12-16

Family

ID=29417087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002144869A Expired - Lifetime JP4386619B2 (ja) 2002-05-20 2002-05-20 半導体装置

Country Status (6)

Country Link
US (1) US6954103B2 (enExample)
JP (1) JP4386619B2 (enExample)
KR (1) KR100545422B1 (enExample)
CN (3) CN100505093C (enExample)
DE (1) DE10322733A1 (enExample)
TW (1) TWI222639B (enExample)

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JP2006279203A (ja) 2005-03-28 2006-10-12 Fujitsu Ltd レベル変換回路
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JP4391976B2 (ja) * 2005-09-16 2009-12-24 富士通株式会社 クロック分配回路
US8199600B2 (en) * 2005-09-28 2012-06-12 Hynix Semiconductor Inc. Voltage generator for peripheral circuit
JP2007095075A (ja) * 2005-09-29 2007-04-12 Hynix Semiconductor Inc 内部電圧生成装置
KR100818706B1 (ko) * 2006-01-09 2008-04-02 주식회사 하이닉스반도체 반도체 소자의 내부 전압 발생 장치
KR100771870B1 (ko) 2006-05-19 2007-11-01 삼성전자주식회사 반도체 메모리장치의 승압전압 검출회로 및 이를 제어하는방법
US7595687B2 (en) * 2006-07-31 2009-09-29 Wisconsin Alumni Research Foundation Apparatus and method for reducing EMI generated by a power conversion device
US7768756B2 (en) 2007-04-27 2010-08-03 Hewlett-Packard Development Company, L.P. Leakage current protection circuit
KR100892640B1 (ko) * 2007-05-10 2009-04-09 주식회사 하이닉스반도체 반도체 집적 회로
US7868605B1 (en) 2007-07-02 2011-01-11 Altera Corporation Mixed mode power regulator circuitry for memory elements
US7705659B1 (en) * 2007-07-02 2010-04-27 Altera Corporation Power regulator circuitry with power-on-reset control
JP2009081384A (ja) * 2007-09-27 2009-04-16 Nec Electronics Corp 半導体装置
KR100925368B1 (ko) * 2007-12-20 2009-11-09 주식회사 하이닉스반도체 센스앰프 전압 공급 회로 및 그의 구동 방법
TWI425520B (zh) * 2008-05-12 2014-02-01 Taiwan Semiconductor Mfg 用於記憶體元件之電源啟動／切斷序列機制
JP5211889B2 (ja) * 2008-06-25 2013-06-12 富士通株式会社 半導体集積回路
CN101639797B (zh) * 2008-07-30 2011-05-04 鸿富锦精密工业（深圳）有限公司 内存侦测电路
KR101559908B1 (ko) * 2009-01-20 2015-10-15 삼성전자주식회사 반도체 메모리 장치의 내부전압 발생회로
JP2010176742A (ja) * 2009-01-29 2010-08-12 Elpida Memory Inc 半導体装置及びデータ処理システム
US8054120B2 (en) * 2009-06-30 2011-11-08 Stmicroelectronics Design & Application Gmbh Integrated circuit operable in a standby mode
JP5512226B2 (ja) * 2009-10-27 2014-06-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2011233631A (ja) * 2010-04-26 2011-11-17 Elpida Memory Inc 半導体装置
KR101782137B1 (ko) * 2010-11-08 2017-09-27 삼성전자주식회사 파워 온 리셋 회로
JP5727211B2 (ja) * 2010-12-17 2015-06-03 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
CN102157193B (zh) * 2011-03-28 2013-04-17 钰创科技股份有限公司 存储器的电压调整器
JP2015050722A (ja) * 2013-09-04 2015-03-16 ソニー株式会社 信号出力回路および信号出力方法
CN104795087B (zh) * 2014-01-22 2017-08-25 中芯国际集成电路制造(上海)有限公司 用于读取数据的灵敏放大器及存储器
US9317051B2 (en) * 2014-02-06 2016-04-19 SK Hynix Inc. Internal voltage generation circuits
JP5733771B2 (ja) * 2014-06-17 2015-06-10 ラピスセミコンダクタ株式会社 半導体メモリ
KR102280433B1 (ko) * 2015-09-23 2021-07-22 삼성전자주식회사 전력 공급 회로 및 이를 포함하는 저장 장치
CN106680686A (zh) * 2016-12-29 2017-05-17 浙江大学 一种提高半导体器件皮秒级超快速电学特性测试精度的方法
US10700683B1 (en) * 2018-08-28 2020-06-30 Qualcomm Incorporated Dynamic power supply shifting
CN109946580B (zh) * 2019-04-09 2020-09-04 浙江大学 一种应用于半导体器件超高速实时表征的信号同步方法
JP6998981B2 (ja) * 2020-03-03 2022-01-18 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
CN113467565B (zh) * 2021-07-08 2025-05-30 海宁奕斯伟计算技术有限公司 驱动系统、驱动方法、计算机系统和可读介质
CN117938145B (zh) * 2024-03-22 2024-06-04 深圳安森德半导体有限公司 一种能够实现初态自动控制的电平转换电路

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JP4053718B2 (ja) * 2000-09-07 2008-02-27 富士通株式会社 半導体記憶装置の内部電源供給回路及び半導体記憶装置の内部電源供給方法
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR100446297B1 (ko) * 2002-04-02 2004-08-30 삼성전자주식회사 외부 전압의 변화에 무관하게 안정된 출력 전압을발생하는 전압 발생회로
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