IT8125123A0 - Dispositivo semiconduttore astruttura planare per alte tensioni. - Google Patents
Dispositivo semiconduttore astruttura planare per alte tensioni.Info
- Publication number
- IT8125123A0 IT8125123A0 IT8125123A IT2512381A IT8125123A0 IT 8125123 A0 IT8125123 A0 IT 8125123A0 IT 8125123 A IT8125123 A IT 8125123A IT 2512381 A IT2512381 A IT 2512381A IT 8125123 A0 IT8125123 A0 IT 8125123A0
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- planar structure
- high voltages
- voltages
- planar
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/207,123 US4412242A (en) | 1980-11-17 | 1980-11-17 | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8125123A0 true IT8125123A0 (it) | 1981-11-16 |
IT1196932B IT1196932B (it) | 1988-11-25 |
Family
ID=22769286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT25123/81A IT1196932B (it) | 1980-11-17 | 1981-11-16 | Dispositivo semiconduttore a struttura planare per alte tensioni |
Country Status (9)
Country | Link |
---|---|
US (1) | US4412242A (it) |
JP (3) | JPS57112034A (it) |
CA (1) | CA1175953A (it) |
CH (1) | CH656255A5 (it) |
DE (1) | DE3145231C3 (it) |
FR (1) | FR2494499A1 (it) |
GB (1) | GB2087648B (it) |
IT (1) | IT1196932B (it) |
SE (1) | SE462309B (it) |
Families Citing this family (74)
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---|---|---|---|---|
US4412242A (en) | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
JPS57160159A (en) * | 1981-03-28 | 1982-10-02 | Toshiba Corp | High breakdown voltage planar type semiconductor device |
US4677452A (en) * | 1981-10-26 | 1987-06-30 | Intersil, Inc. | Power field-effect transistor structures |
US4574209A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Split gate EFET and circuitry |
JPS5939066A (ja) * | 1982-08-27 | 1984-03-03 | Hitachi Ltd | 半導体集積回路 |
US4532534A (en) * | 1982-09-07 | 1985-07-30 | Rca Corporation | MOSFET with perimeter channel |
JPS5976466A (ja) * | 1982-10-25 | 1984-05-01 | Mitsubishi Electric Corp | プレ−ナ形半導体装置 |
DE3346286A1 (de) * | 1982-12-21 | 1984-06-28 | International Rectifier Corp., Los Angeles, Calif. | Hochleistungs-metalloxid-feldeffekttransistor- halbleiterbauteil |
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
NL8302092A (nl) * | 1983-06-13 | 1985-01-02 | Philips Nv | Halfgeleiderinrichting bevattende een veldeffekttransistor. |
JPS6042855A (ja) * | 1983-08-19 | 1985-03-07 | Hitachi Ltd | 半導体装置 |
NL8401117A (nl) * | 1984-04-09 | 1985-11-01 | Philips Nv | Halfgeleiderinrichting met veldeffekttransistors met geisoleerde poortelektrode. |
GB2165090A (en) * | 1984-09-26 | 1986-04-03 | Philips Electronic Associated | Improving the field distribution in high voltage semiconductor devices |
US4631564A (en) * | 1984-10-23 | 1986-12-23 | Rca Corporation | Gate shield structure for power MOS device |
EP0222326A2 (en) * | 1985-11-12 | 1987-05-20 | General Electric Company | Method of fabricating an improved insulated gate semiconductor device |
JP2565317B2 (ja) * | 1986-12-03 | 1996-12-18 | 富士通株式会社 | 半導体装置の製造方法 |
US4789886A (en) * | 1987-01-20 | 1988-12-06 | General Instrument Corporation | Method and apparatus for insulating high voltage semiconductor structures |
US4881106A (en) * | 1988-05-23 | 1989-11-14 | Ixys Corporation | DV/DT of power MOSFETS |
US5003372A (en) * | 1988-06-16 | 1991-03-26 | Hyundai Electronics Industries Co., Ltd. | High breakdown voltage semiconductor device |
US5192993A (en) * | 1988-09-27 | 1993-03-09 | Kabushiki Kaisha Toshiba | Semiconductor device having improved element isolation area |
US5270566A (en) * | 1988-12-08 | 1993-12-14 | Fuji Electric Co., Ltd. | Insulated gate semiconductor device |
JPH0783123B2 (ja) * | 1988-12-08 | 1995-09-06 | 富士電機株式会社 | Mos型半導体装置 |
JPH02170469A (ja) * | 1988-12-22 | 1990-07-02 | Fuji Electric Co Ltd | 半導体装置 |
JP2550702B2 (ja) * | 1989-04-26 | 1996-11-06 | 日本電装株式会社 | 電力用半導体素子 |
US4994891A (en) * | 1989-06-20 | 1991-02-19 | Advanced Micro Devices | Shielded transistor device |
DE59010855D1 (de) * | 1990-06-05 | 1998-12-24 | Siemens Ag | Herstellverfahren für einen Leistungs-MISFET |
US5404040A (en) * | 1990-12-21 | 1995-04-04 | Siliconix Incorporated | Structure and fabrication of power MOSFETs, including termination structures |
WO1992016998A1 (en) | 1991-03-18 | 1992-10-01 | Quality Semiconductor, Inc. | Fast transmission gate switch |
US6208195B1 (en) | 1991-03-18 | 2001-03-27 | Integrated Device Technology, Inc. | Fast transmission gate switch |
IT1250233B (it) * | 1991-11-29 | 1995-04-03 | St Microelectronics Srl | Procedimento per la fabbricazione di circuiti integrati in tecnologia mos. |
US5323036A (en) * | 1992-01-21 | 1994-06-21 | Harris Corporation | Power FET with gate segments covering drain regions disposed in a hexagonal pattern |
US5366932A (en) * | 1993-04-26 | 1994-11-22 | Harris Corporation | Semi-conductor chip packaging method and semi-conductor chip having interdigitated gate runners with gate bonding pads |
US5396097A (en) * | 1993-11-22 | 1995-03-07 | Motorola Inc | Transistor with common base region |
EP0660402B1 (en) * | 1993-12-24 | 1998-11-04 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Power semiconductor device |
DE69321965T2 (de) * | 1993-12-24 | 1999-06-02 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
JPH07326743A (ja) | 1994-05-31 | 1995-12-12 | Fuji Electric Co Ltd | プレーナ型半導体素子 |
US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
DE69429913T2 (de) * | 1994-06-23 | 2002-10-31 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Verfahren zur Herstellung eines Leistungsbauteils in MOS-Technik |
EP1408542A3 (en) * | 1994-07-14 | 2009-01-21 | STMicroelectronics S.r.l. | High-speed MOS-technology power device integrated structure, and related manufacturing process |
DE69418037T2 (de) * | 1994-08-02 | 1999-08-26 | Consorzio Per La Ricerca Sulla Microelettronica Ne | Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau |
US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
TW344130B (en) | 1995-10-11 | 1998-11-01 | Int Rectifier Corp | Termination structure for semiconductor device and process for its manufacture |
US5940721A (en) * | 1995-10-11 | 1999-08-17 | International Rectifier Corporation | Termination structure for semiconductor devices and process for manufacture thereof |
EP0772242B1 (en) | 1995-10-30 | 2006-04-05 | STMicroelectronics S.r.l. | Single feature size MOS technology power device |
DE69533134T2 (de) | 1995-10-30 | 2005-07-07 | Stmicroelectronics S.R.L., Agrate Brianza | Leistungsbauteil hoher Dichte in MOS-Technologie |
US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
DE69518653T2 (de) * | 1995-12-28 | 2001-04-19 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | MOS-Technologie-Leistungsanordnung in integrierter Struktur |
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DE69631524T2 (de) | 1996-07-05 | 2004-10-07 | St Microelectronics Srl | Asymmetrische MOS-Technologie-Leistungsanordnung |
US5994762A (en) * | 1996-07-26 | 1999-11-30 | Hitachi, Ltd. | Semiconductor integrated circuit device including boron-doped phospho silicate glass layer and manufacturing method thereof |
US5811841A (en) * | 1997-04-03 | 1998-09-22 | The United States Of America As Represented By The Secretary Of The Air Force | Photoconductive switching with thin layer enhanced breakdown charateristics |
EP0961325B1 (en) | 1998-05-26 | 2008-05-07 | STMicroelectronics S.r.l. | High integration density MOS technology power device |
US6022790A (en) * | 1998-08-05 | 2000-02-08 | International Rectifier Corporation | Semiconductor process integration of a guard ring structure |
JP4644904B2 (ja) * | 2000-04-05 | 2011-03-09 | 住友電気工業株式会社 | パワー半導体素子 |
GB2373634B (en) * | 2000-10-31 | 2004-12-08 | Fuji Electric Co Ltd | Semiconductor device |
JP5011611B2 (ja) | 2001-06-12 | 2012-08-29 | 富士電機株式会社 | 半導体装置 |
US6852634B2 (en) * | 2002-06-27 | 2005-02-08 | Semiconductor Components Industries L.L.C. | Low cost method of providing a semiconductor device having a high channel density |
DE102007020659B4 (de) * | 2007-04-30 | 2012-02-23 | Infineon Technologies Austria Ag | Halbleiterbauelement und Verfahren zur Herstellung desselben |
JP2009076866A (ja) * | 2007-08-31 | 2009-04-09 | Sumitomo Electric Ind Ltd | ショットキーバリアダイオード |
US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
JP5272472B2 (ja) * | 2008-03-28 | 2013-08-28 | サンケン電気株式会社 | 半導体装置 |
CN103534809B (zh) * | 2011-08-05 | 2016-08-17 | 富士电机株式会社 | 半导体器件及半导体器件的制造方法 |
US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
CN103178109A (zh) * | 2011-12-21 | 2013-06-26 | 上海华虹Nec电子有限公司 | 高压隔离型的nldmos结构及其制作方法 |
US10164043B2 (en) | 2012-01-11 | 2018-12-25 | Infineon Technologies Ag | Semiconductor diode and method for forming a semiconductor diode |
US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
CN105244279B (zh) * | 2014-07-10 | 2018-09-25 | 北大方正集团有限公司 | 一种平面型vdmos器件及其制作方法 |
CN105304701B (zh) * | 2014-08-01 | 2018-06-12 | 旺宏电子股份有限公司 | 半导体装置 |
KR102098996B1 (ko) | 2014-08-19 | 2020-04-08 | 비쉐이-실리코닉스 | 초접합 금속 산화물 반도체 전계 효과 트랜지스터 |
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CA667423A (en) * | 1963-07-23 | Northern Electric Company Limited | Semiconductor device and method of manufacture | |
DE1137140B (de) * | 1959-04-06 | 1962-09-27 | Int Standard Electric Corp | Verfahren zum Herstellen von elektrischen Halbleiterbauelementen mit verminderter Oberflaechenleitfaehigkeit am p-n-UEbergang und verminderter Alterung |
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-
1980
- 1980-11-17 US US06/207,123 patent/US4412242A/en not_active Expired - Lifetime
-
1981
- 1981-11-04 CA CA000389424A patent/CA1175953A/en not_active Expired
- 1981-11-09 FR FR8120952A patent/FR2494499A1/fr active Granted
- 1981-11-13 DE DE3145231A patent/DE3145231C3/de not_active Expired - Lifetime
- 1981-11-16 IT IT25123/81A patent/IT1196932B/it active
- 1981-11-16 SE SE8106799A patent/SE462309B/sv not_active IP Right Cessation
- 1981-11-16 CH CH7365/81A patent/CH656255A5/de not_active IP Right Cessation
- 1981-11-17 GB GB8134623A patent/GB2087648B/en not_active Expired
- 1981-11-17 JP JP56184332A patent/JPS57112034A/ja active Granted
-
1996
- 1996-01-11 JP JP8019251A patent/JP2766239B2/ja not_active Expired - Lifetime
- 1996-01-11 JP JP8019252A patent/JP2766240B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
SE462309B (sv) | 1990-05-28 |
JPH09199707A (ja) | 1997-07-31 |
US4412242A (en) | 1983-10-25 |
IT1196932B (it) | 1988-11-25 |
DE3145231C2 (it) | 1994-08-11 |
JPS57112034A (en) | 1982-07-12 |
JPH08250702A (ja) | 1996-09-27 |
SE8106799L (sv) | 1982-05-18 |
DE3145231A1 (de) | 1982-06-09 |
JP2766239B2 (ja) | 1998-06-18 |
DE3145231C3 (de) | 1994-08-11 |
FR2494499A1 (fr) | 1982-05-21 |
GB2087648A (en) | 1982-05-26 |
GB2087648B (en) | 1985-02-13 |
CH656255A5 (de) | 1986-06-13 |
CA1175953A (en) | 1984-10-09 |
JP2766240B2 (ja) | 1998-06-18 |
FR2494499B1 (it) | 1984-06-08 |
JPH0434311B2 (it) | 1992-06-05 |
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