GB1255995A - Semiconductor device and method of making same - Google Patents
Semiconductor device and method of making sameInfo
- Publication number
- GB1255995A GB1255995A GB1101369A GB1101369A GB1255995A GB 1255995 A GB1255995 A GB 1255995A GB 1101369 A GB1101369 A GB 1101369A GB 1101369 A GB1101369 A GB 1101369A GB 1255995 A GB1255995 A GB 1255995A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- layer
- silicon oxide
- alumina
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 11
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 229910000323 aluminium silicate Inorganic materials 0.000 abstract 2
- 239000005354 aluminosilicate glass Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000005360 phosphosilicate glass Substances 0.000 abstract 2
- 229910000077 silane Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 150000002899 organoaluminium compounds Chemical class 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1,255,995. Semi-conductive devices. HITACHI Ltd. 28 Feb., 1969 [4 March, 1968; 17 April, 1968], No. 11013/69. Heading H1K. A planar junction is passivated with a multilayer insulating coating. The coating may be considered to have two layers each of which may consist of one or more films; the layer nearest the semi-conductor surface must have a film of silicon oxide on the semi-conductor surface; the outer layer so covers the first layer that no part of the first layer is exposed to the ambient. The first layer may be: silicon oxide; silicon oxide/phosphosilicate glass (two films); silicon oxide/lead silicate glass; silicon oxide/borosilicate glass. The second layer may be: alumina/aluminosilicate glass; phosphoaluminosilicate glass; alumina/silicon nitride; aluminosilicate glass/silicon nitride; phosphoaluminosilicate glass/silicon nitride. The induced carrier density beneath the coating may be varied in sign and magnitude by varying the content and relative thickness of the films. The semi-conductor body may consist of silicon, germanium or gallium arsenide-the embodiments described use silicon. The diode of Fig. 5 (not shown) has a first film of thermally formed silicon oxide which is protected by a second film of alumina provided by thermal decomposition of tri-ethoxy aluminium-an aluminosilicate film may perhaps be formed at the interface of the first and second films by reaction between them. The PNP transistor of Fig. 11 (not shown) has a first layer consisting of the silicon oxide diffusion-masking film upon which phosphorous pentoxide has been deposited (by oxidation of phosphorus oxychloride) to form, by heating the structure in oxygen, a surface film of phosphosilicate glass. The second layer is pyrolytically deposited alumina. An interface phosphoaluminosilicate film may be formed -such a film may be formed intentionally by reacting together an organoaluminium compound, phosphorus oxychloride, and silane. Aluminium electrodes are provided. The junction-isolated integrated circuit of Fig. 17 (not shown) has a first film of silicon oxide which is either the thermally formed diffusion-mask or a freshly applied film replacing the masking layer. This film is protected by an aluminosilicate layer obtained by the reaction of triethoxyaluminium and silane. The diode of Fig. 18 (not shown) has a first layer of silicon oxide which may contain phosphorus, lead, or boron, and has a second layer mainly composed of alumina-the coating also extends over an anti-inversion ring. The diode of Fig. 19 (not shown) has a silicon oxide film protected by successive films of alumina and silicon nitride. The IGFET of Fig. 20 (not shown) has films of silicon oxide and alumina the relative thicknesses of which may be adjusted in manufacture to control the channel density.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1362768A JPS5510976B1 (en) | 1968-03-04 | 1968-03-04 | |
| JP2518168 | 1968-04-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1255995A true GB1255995A (en) | 1971-12-08 |
Family
ID=26349441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1101369A Expired GB1255995A (en) | 1968-03-04 | 1969-02-28 | Semiconductor device and method of making same |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1910746A1 (en) |
| FR (1) | FR2003163A1 (en) |
| GB (1) | GB1255995A (en) |
| NL (1) | NL6903255A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171563A (en) * | 2021-11-30 | 2022-03-11 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002511A (en) * | 1975-04-16 | 1977-01-11 | Ibm Corporation | Method for forming masks comprising silicon nitride and novel mask structures produced thereby |
| JPS5627935A (en) * | 1979-08-15 | 1981-03-18 | Toshiba Corp | Semiconductor device |
| US4412242A (en) * | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
| DE4109533C2 (en) * | 1990-09-13 | 1994-06-23 | Eupec Gmbh & Co Kg | Passivated semiconductor component and method for its production |
| US5639325A (en) * | 1995-02-01 | 1997-06-17 | The Whitaker Corporation | Process for producing a glass-coated article |
| US6749918B2 (en) | 1997-11-18 | 2004-06-15 | Johan Staal | Hygiene mats |
| DE102013218494B4 (en) | 2013-09-16 | 2021-06-02 | Infineon Technologies Ag | Semiconductor component with a passivation layer and manufacturing process |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1390639A (en) * | 1963-04-02 | 1965-02-26 | Rca Corp | Semiconductor device manufacturing process |
| BE706603A (en) * | 1967-01-13 | 1968-04-01 | ||
| GB1172491A (en) * | 1967-03-29 | 1969-12-03 | Hitachi Ltd | A method of manufacturing a semiconductor device |
-
1969
- 1969-02-28 GB GB1101369A patent/GB1255995A/en not_active Expired
- 1969-03-03 DE DE19691910746 patent/DE1910746A1/en active Pending
- 1969-03-03 FR FR6905711A patent/FR2003163A1/en active Granted
- 1969-03-03 NL NL6903255A patent/NL6903255A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171563A (en) * | 2021-11-30 | 2022-03-11 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1910746B2 (en) | 1970-11-19 |
| NL6903255A (en) | 1969-09-08 |
| FR2003163B1 (en) | 1974-06-14 |
| DE1910746A1 (en) | 1970-03-12 |
| FR2003163A1 (en) | 1969-11-07 |
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