GB1255347A - Improvements in semiconductor devices - Google Patents
Improvements in semiconductor devicesInfo
- Publication number
- GB1255347A GB1255347A GB4774369A GB4774369A GB1255347A GB 1255347 A GB1255347 A GB 1255347A GB 4774369 A GB4774369 A GB 4774369A GB 4774369 A GB4774369 A GB 4774369A GB 1255347 A GB1255347 A GB 1255347A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- oxide
- deposited
- ions
- decomposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 150000002500 ions Chemical class 0.000 abstract 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 4
- 238000000354 decomposition reaction Methods 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- -1 cholorine Chemical class 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 230000001939 inductive effect Effects 0.000 abstract 3
- 239000011810 insulating material Substances 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 229910003902 SiCl 4 Inorganic materials 0.000 abstract 2
- 150000001450 anions Chemical class 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052783 alkali metal Inorganic materials 0.000 abstract 1
- 150000001340 alkali metals Chemical class 0.000 abstract 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000002585 base Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 150000001768 cations Chemical class 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 229910000464 lead oxide Inorganic materials 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910001415 sodium ion Inorganic materials 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 abstract 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1,255,347. Semi-conductor devices. HITACHI Ltd. 29 Sept., 1969 [2 Oct., 1968], No. 47743/69. Heading H1K. A layer of insulating material doped with space charge inducing ions is separated from the surface of a semi-conductor device by means of an underlying layer of insulating material selected from the group comprising silicon nitride, aluminium oxide, titanium oxide, a mixture of silicon oxide and lead oxide (vitrified) and a mixture of silicon oxide and phosphorus oxide (vitrified). The space charge inducing ions are selected from alkali metals or alkaline earth metals as cations or fluorine, cholorine, hydroxide ions, sulphur, or gold as anions and the underlying insulating layer prevents these ions, which tend to be highly mobile, from reaching the semi-conductor surface. As shown, Fig. 4, an IGFET is produced by forming an oxide layer 2 on the surface of an N type Si substrate, by oxidizing or decomposition of an organo-oxysilane compound, forming windows (6, 7) by photoengraving and diffusing-in boron in an oxidizing atmosphere to form source and drain regions 3 and 4. The windows are re-opened and the thickness of the oxide is reduced between the source and drain regions by etching. The wafer is then heated in dry oxygen to form a thin clean oxide layer, a layer 8 of Si 3 N 4 is deposited by reaction of NH 3 and SiCl 4 , and an insulating layer 9 doped with space charge inducing ions is deposited. The layer 9 may be of SiO 2 and may be doped with S by depositing the layer by decomposition of SiCl 4 in water vapour including sulphuric acid, or may be doped with Au or Na by depositing a clean oxide layer and diffusing in Au from a deposited layer or exposing to an atmosphere containing Na ions respectively. The source and drain windows are reformed by photomasking and etching and source, drain and gate electrodes 10, 11, 12 are deposited. The ion-containing insulating layer may also be of Al 2 O 3 , Si 3 N 4 , SiO 2 + Al 2 O 3 , or SiO 2 + Si 3 N 4 . The semi-conductor material may also be Ge or an intermetallic compound in which case the silicon oxide masking layer is deposited by decomposition of an organo-oxysilane compound. As shown, Fig. 5, a planar bipolar transistor is produced in a P type Si substrate 21 by selective diffusion to form an N type base region 22 and a P type emitter region 23. The surface is covered with a clean oxide layer 24 followed by a layer 25 of Al 2 O 3 . A layer 26 of insulating material containing anions, such as S, is deposited near the edge of the wafer to induce a P type space charge region 27 to interrupt the inversion layer which forms under the oxide layer. Electrodes 28, 29, 30 are then applied. The layer 25 of Al 2 O 3 may be formed by decomposition of triethoxy aluminium in a carrier gas of N 3 or O 2 . The invention may also be applied to diodes, IC's and JUGFET's.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7111168 | 1968-10-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1255347A true GB1255347A (en) | 1971-12-01 |
Family
ID=13451099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4774369A Expired GB1255347A (en) | 1968-10-02 | 1969-09-29 | Improvements in semiconductor devices |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1949174B2 (en) |
| FR (1) | FR2019679B1 (en) |
| GB (1) | GB1255347A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2526622A1 (en) * | 1982-05-10 | 1983-11-10 | Lohja Ab Oy | COMPOSITE FILM, ESPECIALLY FOR THIN FILM ELECTROLUMINESCENT STRUCTURES |
| EP0435187A2 (en) * | 1989-12-26 | 1991-07-03 | Fujitsu Limited | Method of fabricating a semiconductor device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3860461A (en) * | 1973-05-29 | 1975-01-14 | Texas Instruments Inc | Method for fabricating semiconductor devices utilizing composite masking |
| DE2658304C2 (en) * | 1975-12-24 | 1984-12-20 | Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa | Semiconductor device |
| DE2713647C2 (en) * | 1977-03-28 | 1984-11-29 | Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa | A semiconductor device composed of a semiconductor substrate and a surface protective film |
| GB2071411B (en) * | 1980-03-07 | 1983-12-21 | Philips Electronic Associated | Passivating p-n junction devices |
-
1969
- 1969-09-29 GB GB4774369A patent/GB1255347A/en not_active Expired
- 1969-09-29 DE DE19691949174 patent/DE1949174B2/en active Pending
- 1969-10-01 FR FR6933490A patent/FR2019679B1/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2526622A1 (en) * | 1982-05-10 | 1983-11-10 | Lohja Ab Oy | COMPOSITE FILM, ESPECIALLY FOR THIN FILM ELECTROLUMINESCENT STRUCTURES |
| GB2120845A (en) * | 1982-05-10 | 1983-12-07 | Lohja Ab Oy | Combination film |
| EP0435187A2 (en) * | 1989-12-26 | 1991-07-03 | Fujitsu Limited | Method of fabricating a semiconductor device |
| EP0435187A3 (en) * | 1989-12-26 | 1993-01-20 | Fujitsu Limited | Method of fabricating a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2019679A1 (en) | 1970-07-03 |
| DE1949174B2 (en) | 1971-09-23 |
| FR2019679B1 (en) | 1974-05-24 |
| DE1949174A1 (en) | 1970-05-14 |
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