GB1172491A - A method of manufacturing a semiconductor device - Google Patents

A method of manufacturing a semiconductor device

Info

Publication number
GB1172491A
GB1172491A GB1357068A GB1357068A GB1172491A GB 1172491 A GB1172491 A GB 1172491A GB 1357068 A GB1357068 A GB 1357068A GB 1357068 A GB1357068 A GB 1357068A GB 1172491 A GB1172491 A GB 1172491A
Authority
GB
United Kingdom
Prior art keywords
oxide
layer
silicon
diffusion
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1357068A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1172491A publication Critical patent/GB1172491A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1,172,491. Semi-conductor devices. HITACHI Ltd. 20 March, 1968 [29 March, 1967], No. 13570/68. Heading H1K. In making a semi-conductor device a layer containing a conductivity determining impurity, sandwiched between layers consisting entirely or mainly of an oxide of silicon is formed on a semi-conductor body and the coated body then heated to form a glassy layer, consisting of a mixture of the impurity and oxide, which is spaced from the body by what remains of the lower oxide layer. In a typical case a P-type base region is first formed by oxidemasked diffusion in an N-type silicon substrate. An aperture is then formed by photoresist and etching steps in the oxide over the base region and phosphorus deposited over the entire substrate from a mixture of phosphorus oxychloride and oxygen. This in turn is coated with silicon oxide by decomposition of tetraethoxysilane. Prolonged heating at 1100‹ C. in oxygen causes formation of the emitter zone 18b (Fig. 2g) and a phosphate glass layer 16b sandwiched between the remains of the oxide layers 12, 17. Holes extending to the base and emitter zones are next formed and aluminium vapour deposited overall and shaped to form contacts 23 and 24. Formation of the holes and contact shaping is done by standard photoresist and etching steps. If the diffusion step is prolonged the upper oxide layer becomes converted to glass which is hygroscopic and is therefore preferably not exposed in the finished device. To avoid this a layer of alumina or silicon nitride may be formed on the upper oxide layer prior to diffusion or on the glass formed during diffusion. Suitable methods for forming alumina are deposition from an aluminium organic oxide, and deposition of aluminium followed by oxidation, while silicon nitride can be formed by the pyrolytic reaction of silane and ammonia. Silicon monoxide may replace the dioxide in the first layer and the second oxidic layer may be a silicate or lead glass which may contain alumina and/or boric oxide.
GB1357068A 1967-03-29 1968-03-20 A method of manufacturing a semiconductor device Expired GB1172491A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1908267 1967-03-29

Publications (1)

Publication Number Publication Date
GB1172491A true GB1172491A (en) 1969-12-03

Family

ID=11989508

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1357068A Expired GB1172491A (en) 1967-03-29 1968-03-20 A method of manufacturing a semiconductor device

Country Status (3)

Country Link
FR (1) FR1557549A (en)
GB (1) GB1172491A (en)
NL (1) NL150619B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007082760A1 (en) * 2006-01-23 2007-07-26 Gp Solar Gmbh Method for fabricating a semiconductor component having regions with different levels of doping

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1255995A (en) * 1968-03-04 1971-12-08 Hitachi Ltd Semiconductor device and method of making same
US3615941A (en) * 1968-05-07 1971-10-26 Hitachi Ltd Method for manufacturing semiconductor device with passivation film
JPS501872B1 (en) * 1970-01-30 1975-01-22

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007082760A1 (en) * 2006-01-23 2007-07-26 Gp Solar Gmbh Method for fabricating a semiconductor component having regions with different levels of doping
CN101379595B (en) * 2006-01-23 2011-05-11 Gp太阳能有限公司 Method for fabricating a semiconductor component having regions with different levels of doping

Also Published As

Publication number Publication date
NL150619B (en) 1976-08-16
DE1764065A1 (en) 1972-03-02
FR1557549A (en) 1969-02-14
DE1764065B2 (en) 1972-11-02
NL6804373A (en) 1968-09-30

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years