NL150619B - PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE MANUFACTURED IN ACCORDANCE WITH THIS PROCESS. - Google Patents

PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE MANUFACTURED IN ACCORDANCE WITH THIS PROCESS.

Info

Publication number
NL150619B
NL150619B NL6804373A NL6804373A NL150619B NL 150619 B NL150619 B NL 150619B NL 6804373 A NL6804373 A NL 6804373A NL 6804373 A NL6804373 A NL 6804373A NL 150619 B NL150619 B NL 150619B
Authority
NL
Netherlands
Prior art keywords
semiconductor device
manufacture
accordance
device manufactured
manufactured
Prior art date
Application number
NL6804373A
Other languages
Dutch (nl)
Other versions
NL6804373A (en
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL6804373A publication Critical patent/NL6804373A/xx
Publication of NL150619B publication Critical patent/NL150619B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
NL6804373A 1967-03-29 1968-03-28 PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE MANUFACTURED IN ACCORDANCE WITH THIS PROCESS. NL150619B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1908267 1967-03-29

Publications (2)

Publication Number Publication Date
NL6804373A NL6804373A (en) 1968-09-30
NL150619B true NL150619B (en) 1976-08-16

Family

ID=11989508

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6804373A NL150619B (en) 1967-03-29 1968-03-28 PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE MANUFACTURED IN ACCORDANCE WITH THIS PROCESS.

Country Status (3)

Country Link
FR (1) FR1557549A (en)
GB (1) GB1172491A (en)
NL (1) NL150619B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1255995A (en) * 1968-03-04 1971-12-08 Hitachi Ltd Semiconductor device and method of making same
US3615941A (en) * 1968-05-07 1971-10-26 Hitachi Ltd Method for manufacturing semiconductor device with passivation film
JPS501872B1 (en) * 1970-01-30 1975-01-22
DE102006003283A1 (en) * 2006-01-23 2007-07-26 Gp Solar Gmbh Fabricating method for semiconductor component e.g. solar cell, involves forming diffusion-inhibiting layer, partial removal of layer in highly doped region, formation of dopant source and diffusion of dopant from dopant source

Also Published As

Publication number Publication date
DE1764065A1 (en) 1972-03-02
FR1557549A (en) 1969-02-14
DE1764065B2 (en) 1972-11-02
NL6804373A (en) 1968-09-30
GB1172491A (en) 1969-12-03

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Legal Events

Date Code Title Description
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: HITACHI

V4 Lapsed because of reaching the maxim lifetime of a patent