HK17492A - Photosensitive coating compositions,thermally stable coatings prepared from them,and the use of such coatings in forming thermally stable polymer images - Google Patents

Photosensitive coating compositions,thermally stable coatings prepared from them,and the use of such coatings in forming thermally stable polymer images

Info

Publication number
HK17492A
HK17492A HK174/92A HK17492A HK17492A HK 17492 A HK17492 A HK 17492A HK 174/92 A HK174/92 A HK 174/92A HK 17492 A HK17492 A HK 17492A HK 17492 A HK17492 A HK 17492A
Authority
HK
Hong Kong
Prior art keywords
thermally stable
coatings
images
coating compositions
photosensitive coating
Prior art date
Application number
HK174/92A
Other languages
English (en)
Inventor
Wayne Edmund Felly
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24469821&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK17492(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rohm & Haas filed Critical Rohm & Haas
Publication of HK17492A publication Critical patent/HK17492A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/16—Chemical modification with polymerisable compounds
    • C08J7/18—Chemical modification with polymerisable compounds using wave energy or particle radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Paints Or Removers (AREA)
  • Cosmetics (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
  • Paper (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Materials For Medical Uses (AREA)
  • Dental Preparations (AREA)
HK174/92A 1984-06-01 1992-03-05 Photosensitive coating compositions,thermally stable coatings prepared from them,and the use of such coatings in forming thermally stable polymer images HK17492A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61651884A 1984-06-01 1984-06-01

Publications (1)

Publication Number Publication Date
HK17492A true HK17492A (en) 1992-03-13

Family

ID=24469821

Family Applications (1)

Application Number Title Priority Date Filing Date
HK174/92A HK17492A (en) 1984-06-01 1992-03-05 Photosensitive coating compositions,thermally stable coatings prepared from them,and the use of such coatings in forming thermally stable polymer images

Country Status (18)

Country Link
EP (1) EP0164248B1 (de)
JP (1) JPS60263143A (de)
KR (1) KR920005773B1 (de)
AT (1) ATE68272T1 (de)
AU (1) AU595160B2 (de)
BR (1) BR8502638A (de)
CA (1) CA1283799C (de)
DE (1) DE3584316D1 (de)
DK (1) DK241885A (de)
FI (1) FI84942C (de)
HK (1) HK17492A (de)
IE (1) IE57143B1 (de)
IL (1) IL75373A (de)
MX (1) MX170270B (de)
MY (1) MY103545A (de)
NO (1) NO173574C (de)
SG (1) SG108091G (de)
ZA (1) ZA854172B (de)

Families Citing this family (136)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3582697D1 (de) * 1984-06-07 1991-06-06 Hoechst Ag Positiv arbeitende strahlungsempfindliche beschichtungsloesung.
DE3421160A1 (de) * 1984-06-07 1985-12-12 Hoechst Ag, 6230 Frankfurt Positiv arbeitende strahlungsempfindliche beschichtungsloesung
US5066561A (en) * 1984-06-11 1991-11-19 Hoechst Celanese Corporation Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US4550069A (en) * 1984-06-11 1985-10-29 American Hoechst Corporation Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US5143814A (en) * 1984-06-11 1992-09-01 Hoechst Celanese Corporation Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
CA1254432A (en) * 1984-12-28 1989-05-23 Conrad G. Houle High-temperature resistant, selectively developable positive-working resist
EP0195315B1 (de) * 1985-03-11 1989-10-25 Hoechst Celanese Corporation Verfahren zum Herstellen von Photoresist-Strukturen
US4885232A (en) * 1985-03-11 1989-12-05 Hoechst Celanese Corporation High temperature post exposure baking treatment for positive photoresist compositions
JPH07109510B2 (ja) * 1985-04-02 1995-11-22 三菱化学株式会社 ポジ型フォトレジスト組成物
JPS61241745A (ja) * 1985-04-18 1986-10-28 Oki Electric Ind Co Ltd ネガ型フオトレジスト組成物及びレジストパタ−ン形成方法
JPH0766183B2 (ja) * 1985-05-15 1995-07-19 三菱化学株式会社 ポジ型フオトレジスト組成物
US4931381A (en) * 1985-08-12 1990-06-05 Hoechst Celanese Corporation Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
EP0212482B1 (de) * 1985-08-12 1989-04-19 Hoechst Celanese Corporation Verfahren zur Herstellung negativer Bilder aus einem positiv arbeitenden Photoresist
US4929536A (en) * 1985-08-12 1990-05-29 Hoechst Celanese Corporation Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
EP0226741B1 (de) * 1985-10-25 1989-08-02 Hoechst Celanese Corporation Verfahren zur Herstellung eines positiv arbeitenden Photoresists
EP0221428B1 (de) * 1985-10-28 1989-11-23 Hoechst Celanese Corporation Behandlungsflüssigkeit für ein Photoresistgemisch und hierfür geeignetes Verfahren
DE3674141D1 (de) * 1985-10-28 1990-10-18 Hoechst Celanese Corp Strahlungsempfindliches, positiv-arbeitendes gemisch und hieraus hergestelltes photoresistmaterial.
CA1307695C (en) * 1986-01-13 1992-09-22 Wayne Edmund Feely Photosensitive compounds and thermally stable and aqueous developablenegative images
CA1308596C (en) * 1986-01-13 1992-10-13 Rohm And Haas Company Microplastic structures and method of manufacture
JPS62194249A (ja) * 1986-02-20 1987-08-26 Fuji Photo Film Co Ltd ポジ型感光性組成物
DE3634371A1 (de) * 1986-10-09 1988-04-21 Hoechst Ag Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
JPH01501176A (ja) * 1986-10-20 1989-04-20 マクダーミッド，インコーポレーテッド 像反転可能なシステム及びプロセス
NL8700421A (nl) * 1987-02-20 1988-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
DE3711264A1 (de) * 1987-04-03 1988-10-13 Hoechst Ag Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial
DE3711263A1 (de) * 1987-04-03 1988-10-13 Hoechst Ag Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von druckformen
DE3725949A1 (de) * 1987-08-05 1989-02-16 Hoechst Ag Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von negativen reliefkopien
US5240807A (en) * 1987-08-20 1993-08-31 Hoechst Celanese Corporation Photoresist article having a portable, conformable, built-on mask
US4873176A (en) * 1987-08-28 1989-10-10 Shipley Company Inc. Reticulation resistant photoresist coating
DE3735852A1 (de) * 1987-10-23 1989-05-03 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial
WO1989005475A1 (en) * 1987-12-10 1989-06-15 Macdermid, Incorporated Image-reversible dry-film photoresists
DE3812326A1 (de) * 1988-04-14 1989-10-26 Basf Ag Positiv arbeitendes, strahlungsempfindliches gemisch auf basis von saeurespaltbaren und photochemisch saeurebildenden verbindungen und verfahren zur herstellung von reliefmustern und reliefbildern
JPH01293340A (ja) * 1988-05-20 1989-11-27 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
DE3821584A1 (de) * 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
US5079131A (en) * 1988-08-29 1992-01-07 Shipley Company Inc. Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
KR900005226A (ko) * 1988-09-29 1990-04-13 윌리엄 비이 해리스 감광성 조성물 및 양화 상과 음화 상의 생성방법
GB8822956D0 (en) * 1988-09-30 1988-11-09 Cookson Graphics Plc Baking treatment of lithographic printing plate
JP2505033B2 (ja) * 1988-11-28 1996-06-05 東京応化工業株式会社 電子線レジスト組成物及びそれを用いた微細パタ―ンの形成方法
JP2583600B2 (ja) * 1989-02-20 1997-02-19 東京応化工業株式会社 ネガ型電子線レジスト組成物
DE3907953A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
JP2661671B2 (ja) * 1989-03-20 1997-10-08 株式会社日立製作所 パタン形成材料とそれを用いたパタン形成方法
JPH02254450A (ja) * 1989-03-29 1990-10-15 Toshiba Corp レジスト
US5128232A (en) * 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
US5210000A (en) * 1989-05-22 1993-05-11 Shipley Company Inc. Photoresist and method for forming a relief image utilizing composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
FR2648468B1 (fr) * 1989-05-30 1992-12-04 Commissariat Energie Atomique Composition de resine sensible aux rayonnements uv et aux electrons
US5391465A (en) * 1989-06-20 1995-02-21 Rohm And Haas Company Method of using selected photoactive compounds in high resolution, acid hardening photoresists with near ultraviolet radiation wherein the photoresist comprise conventional deep UV photoacid generators
CA2019693A1 (en) * 1989-07-07 1991-01-07 Karen Ann Graziano Acid-hardening photoresists of improved sensitivity
EP0423446B1 (de) * 1989-10-17 1998-03-04 Shipley Company Inc. Fotoresist für nahes U.V.
US5212046A (en) * 1989-10-17 1993-05-18 Shipley Company Inc. Near UV photoresist
JPH03142918A (ja) * 1989-10-30 1991-06-18 Matsushita Electron Corp レジストパターン形成方法
US5183722A (en) * 1989-12-01 1993-02-02 Tosoh Corporation Positive photosensitive composition for forming lenses containing 1,2-naphthoquinone diazide sulfonate photosensitizer, alkali-soluble resin and thermosetting agent and process for producing the composition
DE4006190A1 (de) * 1990-02-28 1991-08-29 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
TW207009B (de) * 1991-01-31 1993-06-01 Sumitomo Chemical Co
DE4112974A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4112972A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4112965A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4120174A1 (de) * 1991-06-19 1992-12-24 Hoechst Ag Strahlungsempfindliche sulfonsaeureester und deren verwendung
DE4125042A1 (de) * 1991-07-29 1993-02-04 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5292614A (en) * 1991-08-02 1994-03-08 Mitsubishi Kasei Corporation Negative photosensitive composition and method for forming a resist pattern
US5286600A (en) * 1991-08-27 1994-02-15 Mitsubishi Kasei Corporation Negative photosensitive composition and method for forming a resist pattern by means thereof
US6165697A (en) 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
JPH05341522A (ja) * 1992-06-09 1993-12-24 Fuji Photo Film Co Ltd ネガ型フオトレジスト組成物
JPH0643637A (ja) * 1992-07-23 1994-02-18 Sumitomo Chem Co Ltd パターンの保持方法
JPH0667413A (ja) * 1992-08-20 1994-03-11 Sumitomo Chem Co Ltd ネガ型フォトレジスト組成物
TW288112B (de) * 1993-06-02 1996-10-11 Sumitomo Chemical Co
US5879856A (en) 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
US6190829B1 (en) * 1996-09-16 2001-02-20 International Business Machines Corporation Low “K” factor hybrid photoresist
US6455228B1 (en) * 1999-08-25 2002-09-24 Tokyo Ohka Kogyo Co., Ltd. Multilayered body for photolithographic patterning
EP1469346B1 (de) * 2002-01-23 2015-08-05 JSR Corporation Positive lichtempfindliche isolierende harzzusammensetzung und daraus erhaltenes ausgehärtetes objekt
EP1612604A3 (de) 2004-07-02 2006-04-05 Rohm and Haas Electronic Materials, L.L.C. Zusammensetzungen und Verfahren für die Immersionslithographie
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
EP1691238A3 (de) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
EP1762895B1 (de) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflex-Zusammensetzungen für Hartmasken
EP1829942B1 (de) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
TWI598223B (zh) 2006-03-10 2017-09-11 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
CN101256355B (zh) 2006-10-30 2013-03-27 罗门哈斯电子材料有限公司 浸渍平版印刷用组合物和浸渍平版印刷方法
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
JP5337398B2 (ja) 2007-04-06 2013-11-06 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． コーティング組成物
US8257902B2 (en) 2007-11-05 2012-09-04 Deyan Wang Compositons and processes for immersion lithography
EP2071400A1 (de) 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
EP2784584A1 (de) 2008-11-19 2014-10-01 Rohm and Haas Electronic Materials LLC Zusammensetzungen, die Sulfonamid-Material umfassen, und Verfahren für die Fotolithografie
EP3051348A1 (de) 2008-11-19 2016-08-03 Rohm and Haas Electronic Materials LLC Zusammensetzungen mit heterosubstituierter carbocyclischer arylkomponente und fotolithografie verfahren
EP2189845B1 (de) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Prozesse für Fotolithographie
EP2189846B1 (de) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Verfahren für die Fotolithographie unter Verwendung einer Fotolackzusammensetzung beinhaltend ein Blockcopolymer
EP2204694A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
EP2204392A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
CN101943860B (zh) 2009-06-08 2013-12-11 罗门哈斯电子材料有限公司 平版印刷方法
US8338077B2 (en) 2009-06-22 2012-12-25 Rohm And Haas Electronic Materials Llc Photoacid generators and photoresists comprising same
CN101963754B (zh) 2009-06-26 2012-12-19 罗门哈斯电子材料有限公司 形成电子器件的方法
JP5698923B2 (ja) 2009-06-26 2015-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 自己整合型スペーサー多重パターニング方法
TWI442453B (zh) 2009-11-19 2014-06-21 羅門哈斯電子材料有限公司 形成電子裝置之方法
CN102225924B (zh) 2009-12-10 2015-04-01 罗门哈斯电子材料有限公司 光酸发生剂和包含该光酸发生剂的光致抗蚀剂
KR101806155B1 (ko) 2009-12-10 2017-12-07 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 콜레이트 광산 발생제 및 이를 포함하는 포토레지스트
CN102180822B (zh) 2009-12-14 2014-08-13 罗门哈斯电子材料有限公司 磺酰光酸产生剂和包含该磺酰光酸产生剂的光刻胶
TWI507462B (zh) 2010-01-25 2015-11-11 羅門哈斯電子材料有限公司 包含有含氮化合物之光阻
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
JP5969171B2 (ja) 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤およびこれを含むフォトレジスト
EP2383611A3 (de) 2010-04-27 2012-01-25 Rohm and Haas Electronic Materials LLC Fotosäureerzeuger und Fotolacke damit
JP2012073612A (ja) 2010-09-14 2012-04-12 Rohm & Haas Electronic Materials Llc マルチアミド成分を含むフォトレジスト
US9156785B2 (en) 2010-11-15 2015-10-13 Rohm And Haas Electronic Materials Llc Base reactive photoacid generators and photoresists comprising same
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
JP5961363B2 (ja) 2010-11-15 2016-08-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
EP2472320A2 (de) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Zusammensetzungen mit basisch-reaktiven Komponenten und Verfahren für Fotolithografie
EP2472329B1 (de) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
EP2472328B1 (de) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
EP2511766B1 (de) 2011-04-14 2013-07-31 Rohm and Haas Electronic Materials LLC Deckschicht Zusammensetzungen für Photoresist und Immersionsfotolithografisches Verfahren unter deren Verwendung
EP2753662B1 (de) 2011-09-07 2020-06-24 MicroChem Corp. Epoxidformulierungen und verfahren zur herstellung von reliefmustern auf substraten mit niedriger oberflächenenergie
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
WO2013134104A2 (en) 2012-03-08 2013-09-12 Microchem Corp. Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
TWI527792B (zh) 2012-06-26 2016-04-01 羅門哈斯電子材料有限公司 光酸產生劑、含該光酸產生劑之光阻劑及含該光阻劑之經塗覆物件
US10527934B2 (en) 2012-10-31 2020-01-07 Rohm And Haas Electronic Materials Llc Photoresists comprising ionic compound
US9541834B2 (en) 2012-11-30 2017-01-10 Rohm And Haas Electronic Materials Llc Ionic thermal acid generators for low temperature applications
US9410016B2 (en) 2013-07-16 2016-08-09 Dow Global Technologies Llc Aromatic polyacetals and articles comprising them
US8933239B1 (en) 2013-07-16 2015-01-13 Dow Global Technologies Llc Bis(aryl)acetal compounds
US8962779B2 (en) 2013-07-16 2015-02-24 Dow Global Technologies Llc Method of forming polyaryl polymers
US9063420B2 (en) 2013-07-16 2015-06-23 Rohm And Haas Electronic Materials Llc Photoresist composition, coated substrate, and method of forming electronic device
US9067909B2 (en) 2013-08-28 2015-06-30 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US9046767B2 (en) 2013-10-25 2015-06-02 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US9182669B2 (en) 2013-12-19 2015-11-10 Rohm And Haas Electronic Materials Llc Copolymer with acid-labile group, photoresist composition, coated substrate, and method of forming an electronic device
US9581901B2 (en) 2013-12-19 2017-02-28 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
US9229319B2 (en) 2013-12-19 2016-01-05 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
EP2998297A1 (de) 2014-09-18 2016-03-23 Heraeus Materials Korea Corporation Photosäureerzeugende Verbindungen, besagte Verbindungen enthaltende Zusammensetzungen, Verbundmaterial und Verfahren zur Herstellung des Verbundmaterials sowie Verwendungen besagter Verbindungen
US9383644B2 (en) 2014-09-18 2016-07-05 Heraeus Precious Metals North America Daychem LLC Sulfonic acid derivative compounds as photoacid generators in resist applications
US9477150B2 (en) 2015-03-13 2016-10-25 Heraeus Precious Metals North America Daychem LLC Sulfonic acid derivative compounds as photoacid generators in resist applications
WO2017034814A1 (en) 2015-08-21 2017-03-02 Heraeus Precious Metals North America Daychem LLC Sulfonic acid derivative compounds as photoacid generators in resist applications
TWI646397B (zh) 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
EP3182203A1 (de) 2015-12-18 2017-06-21 Heraeus Precious Metals North America Daychem LLC Kombination aus nit-derivaten mit sensibilisatoren
US11448964B2 (en) 2016-05-23 2022-09-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
US11500291B2 (en) 2017-10-31 2022-11-15 Rohm And Haas Electronic Materials Korea Ltd. Underlying coating compositions for use with photoresists
CN111819495B (zh) 2018-03-16 2023-07-18 贺利氏电子化工有限责任公司 在抗蚀剂应用中作为光酸产生剂的环状磺酸盐化合物
KR20240037193A (ko) 2021-06-23 2024-03-21 헤레우스 에퓨리오 엘엘씨 레지스트 응용에서 광산 발생제로서 옥사티아늄 이온 함유 술폰산 유도체 화합물

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE867119C (de) * 1943-02-25 1953-02-16 Basf Ag Verfahren zur Herstellung haertbarer Lackharze
NL125781C (de) * 1959-02-04
CA774047A (en) * 1963-12-09 1967-12-19 Shipley Company Light-sensitive material and process for the development thereof
DE1447592A1 (de) * 1964-12-24 1969-02-13 Agfa Gevaert Ag Lichtvernetzbare Schichten
DE1522527A1 (de) * 1966-03-24 1969-09-11 Standard Elek K Lorenz Ag Verfahren zur Herstellung von Photokopierlacken
GB1375461A (de) * 1972-05-05 1974-11-27
JPS52153672A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Electron beam resist and its usage
US4102686A (en) * 1977-02-25 1978-07-25 Polychrome Corporation Lithographic photosensitive compositions comprising acrylonitrile-butadiene-styrene terpolymer and novolak resin
JPS5498244A (en) * 1978-01-20 1979-08-03 Toray Industries Method of forming positive photo resist image
DE2923980A1 (de) * 1978-06-14 1980-01-03 Polychrome Corp Mehrschichtfolie zur herstellung eines positivs und eines negativs von einem transparentbild
DE2855723C2 (de) * 1978-12-22 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen eines Negativmusters einer Vorlage aus einem Positivlack
JPS5590943A (en) * 1978-12-28 1980-07-10 Fuji Photo Film Co Ltd Photosensitive material and image forming method applicable thereto
US4246374A (en) * 1979-04-23 1981-01-20 Rohm And Haas Company Imidized acrylic polymers
JPS569740A (en) * 1979-07-05 1981-01-31 Fuji Photo Film Co Ltd Image forming method
JPS5625731A (en) * 1979-08-08 1981-03-12 Kanto Kagaku Kk Positive type photoresist composition
JPS5625730A (en) * 1979-08-08 1981-03-12 Kanto Kagaku Kk Positive type photoresist composition
JPS5635130A (en) * 1979-08-31 1981-04-07 Fujitsu Ltd Resist material and method for forming resist pattern
JPS56132337A (en) * 1980-03-21 1981-10-16 Chiyou Lsi Gijutsu Kenkyu Kumiai Pattern forming method
JPS5738431A (en) * 1980-08-12 1982-03-03 Polychrome Corp Image system for selective positive or negative
DE3144499A1 (de) * 1981-11-09 1983-05-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial
DE3144480A1 (de) * 1981-11-09 1983-05-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial
US4439517A (en) * 1982-01-21 1984-03-27 Ciba-Geigy Corporation Process for the formation of images with epoxide resin
GB8315926D0 (en) * 1982-09-18 1983-07-13 Ciba Geigy Ag Photopolymerisable compositions
JPS5968737A (ja) * 1982-10-13 1984-04-18 Tokyo Ohka Kogyo Co Ltd ポジ型及びネガ型パタ−ンの同時形成方法
JPS5979249A (ja) * 1982-10-29 1984-05-08 Tokyo Ohka Kogyo Co Ltd パタ−ン形成方法
DE3325023A1 (de) * 1983-07-11 1985-01-24 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung negativer kopien mittels eines materials auf basis von 1,2-chinondiaziden
US4567132A (en) * 1984-03-16 1986-01-28 International Business Machines Corporation Multi-level resist image reversal lithography process

Also Published As

Publication number Publication date
DK241885A (da) 1985-12-02
ZA854172B (en) 1986-07-30
MX170270B (es) 1993-08-11
DK241885D0 (da) 1985-05-30
EP0164248B1 (de) 1991-10-09
KR920005773B1 (ko) 1992-07-18
FI84942B (fi) 1991-10-31
IE851350L (en) 1985-12-01
JPS60263143A (ja) 1985-12-26
IL75373A0 (en) 1985-09-29
ATE68272T1 (de) 1991-10-15
NO173574B (no) 1993-09-20
FI84942C (fi) 1992-02-10
KR860000330A (ko) 1986-01-28
EP0164248A2 (de) 1985-12-11
IE57143B1 (en) 1992-05-06
NO173574C (no) 1993-12-29
FI852190L (fi) 1985-12-02
CA1283799C (en) 1991-05-07
EP0164248A3 (en) 1987-06-03
BR8502638A (pt) 1986-02-12
FI852190A0 (fi) 1985-05-31
AU4325185A (en) 1985-12-05
MY103545A (en) 1993-07-31
AU595160B2 (en) 1990-03-29
DE3584316D1 (de) 1991-11-14
NO852154L (no) 1985-12-02
IL75373A (en) 1990-06-10
SG108091G (en) 1992-04-16

Similar Documents

Publication Publication Date Title
EP0164248A3 (en) Photosensitive coating compositions, thermally stable coatings prepared from them, and the use of such coatings in forming thermally stable polymer images
ES520593A0 (es) Procedimiento de fabricacion de un revestimiento transparente o barniz sobre superficies solidas.
JPS55164255A (en) Surface coating composition
ATE199386T1 (de) Wärmehärtbare beschichtungsmassen
CA2102818A1 (en) Composite coating with primary or tertiary amine-blocked aromatic sulfonic acid catalyst
JPS55133490A (en) Fluorine-containing composition and its use
BR8307075A (pt) Composicao de revestimento liquida contendo pigmento,copolimero em bloco,processo para revestir um substrato,processo para a preparacao de um copolimero em bloco e substrato revestido
SE8304941D0 (sv) Klarlack pa basis av polyvinylidenfluorid, samt forfarande for beleggning av metalliska ytor
EP0353666A3 (de) Lichtempfindliches Agens, dieses enthaltende lichtempfindliche Harzzusammensetzung und Verfahren zur Bilderzeugung, das diese Zusammensetzung verwendet
JPS6466676A (en) Conductive roll
EP0030604A3 (de) Verfahren zum Härten von Photoresistbildern
GB1109369A (en) Improvements in or relating to titanium dioxide pigments
JPS5559455A (en) Image formation method
JPS5456838A (en) Image holding member
JPS56100676A (en) Fluorine-base resin coating method
JPS55108658A (en) Photographic resin-coated paper
GB1235710A (en) Flame-resistant resistor coating
JPS558855A (en) Anticorrosive coating
JPS55108671A (en) Pressure fixable toner
JPS57201569A (en) Coating method of inorganic material
JPS5714843A (en) Image holding member
Bialostocka et al. Passivation of Phosphate Coatings in Chromate-Free Baths
JPS5323332A (en) Thickener for water-based paint
JPS57159691A (en) Diazo based heat-sensitive recording material
JPS5685758A (en) Material for dry type lithographic plate and its manufacture