KR860000330A - 열안정성 중합체 상(polymer images) 및 그 제조방법 - Google Patents

열안정성 중합체 상(polymer images) 및 그 제조방법 Download PDF

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KR860000330A
KR860000330A KR1019850003801A KR850003801A KR860000330A KR 860000330 A KR860000330 A KR 860000330A KR 1019850003801 A KR1019850003801 A KR 1019850003801A KR 850003801 A KR850003801 A KR 850003801A KR 860000330 A KR860000330 A KR 860000330A
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coating composition
photosensitive coating
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thermally stable
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에드먼드 필리 웨인
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윌리엄 이.램버트 3세
롬 앤드 하스 캄파니
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/16—Chemical modification with polymerisable compounds
    • C08J7/18—Chemical modification with polymerisable compounds using wave energy or particle radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

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  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Paints Or Removers (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cosmetics (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
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  • Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
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Abstract

내용 없음

Description

열안정성 중합체 상(polymer images) 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 모두 주사전자현미경의 10,000배 확대사진이다. 제1도는 본 발명에 따라 형성된 중합체 양성상의 사진이고, 제2도는 300℃로 가열된 후의 본 발명의 열안정성 양성상의 사진이고,

Claims (21)

  1. 산성 경화수지시스템과 포토애시드 생성물 및 용매로 구성되며 수성전개가능하고 이중활성인 열안정성 감광성 피복조성물로부터 형성된, 교차결합 가능하며 200℃이상의 온도에서도 열적으로 안정한, 기질표면에 처리된 중합체상.
  2. 산성 경화수지 시스템 및 포토애시드 생성물로 구성된, 이중활성의 수성전개가능하며 교차결합 가능한 감광성 피복조성물.
  3. 다음의 단계들로 기질을 처리하여 기질표면위에 열안정성 양성 및 음성상을 형성하는 방법, (a) 산성경화수지 시스템 및 포토애시드 생성물을 용매에 용해시켜 감광성 피복조성물을 제조하고, (b) 상기 피복조성물을 기질표면에 도포하고, (c) 피복된 기질표면을 건조시켜 접촉점착성이 없는 (TTF) 감광성 필름을 표면상에 형성하고, (d) 화학방사선원으로 필름을 감광시켜 필름내에 산잠재상(acidic latent image)를 생성하고, (e) 필름내의 산잠재상을 약 70-120℃로 가열하고 이어 화학 방사선으로 필름을 재감광시킨후 수성전개용액으로 전개시켜 기질 표면상에 음성상을 형성시키며, (f) 상기 단계(c)에서 생성된 필름내 산잠재상을 수성 전개용액으로 처리 제거한 다음 표면상의 잔류 필름을 화학방사선으로 재감광시켜 잔류필름내에 2차 산잠재상을 형성한 후 2차 산잠재상을 약 70-120℃로 가열하여 양성상을 형성함.
  4. 청구범위 제1,2 또는 3항에 있어서, 산성경화수지 시스템이 아미노플라스트 수지 및 반응성 수소함유화합물로 구성된 것임을 특징으로 하는, 중합체상, 감광성 피복조성물, 또는 열안정성 양성 및 음성상의 제조방법.
  5. 청구범위 제4항에 있어서, 아미노플라스트가 멜라민수지, 벤조구안아민수지, 우레아수지로 구성된 그룹으로부터 선택된 것임을 특징으로 하는, 중합체상, 감광성 피복조성물, 또는 열안정성 양성 및 음성상의 제조방법.
  6. 청구범위 제1,2 또는 3항에 있어서, 산성경화수지시스템이 노볼락수지 및 잠재 포름알데히드 생성화합물의 혼합물인 것임을 특징으로 하는, 중합체상, 감광성 피복조성물, 또는 열안정성 양성 및 음성상의 제조방법.
  7. 청구범위 제4항에 있어서, 반응성 수소함유화합물이 페놀계 노블락수지, 크레졸께노볼락수지, 폴리글루타르이미드수지, 폴리비닐페놀수지, 및 아크릴산 또는 메타크릴산의 함량이 최소 15% 이상인 아크릴산 또는 메타크릴산)-스티렌 공중합체로 구성된 알카리용해성 수지그룹으로 부터 선택된 것임을 특징으로 하는, 중합체상, 감광성 피복조성물, 또는 열안정성 양성 및 음성상의 제조방법.
  8. 청구범위 제6항에 있어서, 잠재 포름아데히드 생성화합물이 2-히드록시에틸옥사졸리딘 또는 옥사졸리디닐에틸 메타크릴레이트인 것임을 특징으로 하는, 중합체상, 감광성 피복조성물 또는 열안정성 양성 및 음성상의 제조방법.
  9. 청구범위 제1,2또는 3항에 있어서, 감광성 피복조성물이 약 3-50중량부(parts by weight)의 아미노플라스트수지, 약 40-90중량부의 반응성 수소함유화합물(상기 두 화합물이 혼합되어 산성경화수지 시스템을 형성함) 및 약 2-30중량부의 포토애시드 생성물로 구성된 것임을 특징으로 하는, 중합체상, 감광성 피복조성물, 또는 열안정성 양성 및 음성상의 제조방법.
  10. 청구범위 제1,2 또는 3항에 있어서, 감광성 피복조성물이 약 50-95중량부의 페노플라스트, 약 3-40중량부의 포름알데히드 생성화합물(상기 두화합물이 혼합되어 산성경화수지 시스템을 형성함) 및 약 2-30중량부의 포토애시드 생성화합물로 구성된 것임을 특징으로 하는, 중합체상, 감광성피복조성물, 또는 열안정성 양성 및 음성상의 제조방법.
  11. 청구범위 제2항의 감광성 피복조성물로부터 형성된, 기질상의 보호피막.
  12. 청구범위 제3항에 따라 기질표면에 양성 또는 음성상을 형성한 다음 상기 상형성 기질표면위에 상기 방법을 되풀이 행함으로서 기질 표면위에 열안정성의 양성 및 음성의 평탄화성층 상들을 형성하는 방법.
  13. 청구범위 제3항의 방법에 따라 형성되며 약 0.7미크론의 해상도를 갖는, 기질표면에 형성된 음성상.
  14. 청구범위 제1,2 또는 3항에 있어서, 포토애시드 생성화합물이 나프토퀴논 디아지드 술폰산, 나프토퀴논 디아지드 카르복시산, 나프토퀴논 디아지드 술폰산으로부터 유도된 중합체, 나프토퀴논 디아지드 카르복시산으로부터 유도된 중합체, 나프토퀴논 디아지드 술폰산의 지방족알코올 에스테르, 오르도니트로벤조산, 및 그 혼합물로 구성된 그룹으로부터 선택된 것임을 특징으로 하는, 중합체상, 감광성 피복조성물, 또는 열안정성 양성 및 음성상의 제조방법.
  15. 청구범위 제1,2 또는 3항에 있어서, 포토애시드 생성화합물이 0-나프토귀논 디아지드 술폰산 유도체임을 특징으로 하는, 중합체상, 감광성 피복조성물, 또는 열안정성 양성 및 음성상의 제조방법.
  16. 청구범위 제2항에 있어서, 감광성 피복조성물이 그 조성물의 총 고체함량을 기준으로 약 20-30wt%의 포토애시드 생성화합물 및 약 75-80wt%의 산성경화수지 시스템을 포함하여 구성된 것임을 특징으로 하는, 감광성 피복조성물.
  17. 청구범위 제16항에 있어서, 조성물의 총 고체함량을 기준으로 약 25wt%의 나프토퀴논 디아지드 술폰산 유도체 및 약 2-5wt%의 지방족술폰산 에스테르를 부가적으로 포함하여 구성된 것임을 특징으로 하는, 감광성 피복조성물.
  18. 노볼락수지 및 나프토퀴논 디아지드 포토애시드 생성화합물을 용매에 용해시킨 용액에 노볼락수지 중량을 기준으로 약 5-50%의 산성경화 아미노플라스트 또는 포름알데히드 생성물합물을 첨가 혼합하여 구성된, 이중활성의 수성전개가능한 포토레지스트 조성물.
  19. 청구범위 제2항의 감광성 피복조성물로부터 형성된 피막을 포함하는 물품.
  20. 청구범위 제2항의 감광성 피복조성물로부터 형성된 열안정성의 교차결합수지 조성물.
  21. ※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.
KR1019850003801A 1984-06-01 1985-05-31 열안정성 중합체 상(polymer images) 및 그 제조방법 KR920005773B1 (ko)

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AT (1) ATE68272T1 (ko)
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CA (1) CA1283799C (ko)
DE (1) DE3584316D1 (ko)
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JPS5968737A (ja) * 1982-10-13 1984-04-18 Tokyo Ohka Kogyo Co Ltd ポジ型及びネガ型パタ−ンの同時形成方法
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HK17492A (en) 1992-03-13
NO852154L (no) 1985-12-02
IL75373A (en) 1990-06-10
ATE68272T1 (de) 1991-10-15
CA1283799C (en) 1991-05-07
SG108091G (en) 1992-04-16
BR8502638A (pt) 1986-02-12
DE3584316D1 (de) 1991-11-14
EP0164248A3 (en) 1987-06-03
MX170270B (es) 1993-08-11
FI84942C (fi) 1992-02-10
KR920005773B1 (ko) 1992-07-18
FI852190A0 (fi) 1985-05-31
EP0164248A2 (en) 1985-12-11
AU595160B2 (en) 1990-03-29
EP0164248B1 (en) 1991-10-09
IL75373A0 (en) 1985-09-29
DK241885A (da) 1985-12-02
AU4325185A (en) 1985-12-05
NO173574C (no) 1993-12-29
NO173574B (no) 1993-09-20
ZA854172B (en) 1986-07-30
DK241885D0 (da) 1985-05-30
FI852190L (fi) 1985-12-02
MY103545A (en) 1993-07-31
IE851350L (en) 1985-12-01
FI84942B (fi) 1991-10-31
JPS60263143A (ja) 1985-12-26
IE57143B1 (en) 1992-05-06

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