DE3421160A1
(de)
*
|
1984-06-07 |
1985-12-12 |
Hoechst Ag, 6230 Frankfurt |
Positiv arbeitende strahlungsempfindliche beschichtungsloesung
|
DE3582697D1
(de)
*
|
1984-06-07 |
1991-06-06 |
Hoechst Ag |
Positiv arbeitende strahlungsempfindliche beschichtungsloesung.
|
US4550069A
(en)
*
|
1984-06-11 |
1985-10-29 |
American Hoechst Corporation |
Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
|
US5066561A
(en)
*
|
1984-06-11 |
1991-11-19 |
Hoechst Celanese Corporation |
Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
|
US5143814A
(en)
*
|
1984-06-11 |
1992-09-01 |
Hoechst Celanese Corporation |
Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
|
CA1254432A
(en)
*
|
1984-12-28 |
1989-05-23 |
Conrad G. Houle |
High-temperature resistant, selectively developable positive-working resist
|
US4885232A
(en)
*
|
1985-03-11 |
1989-12-05 |
Hoechst Celanese Corporation |
High temperature post exposure baking treatment for positive photoresist compositions
|
ATE47631T1
(de)
*
|
1985-03-11 |
1989-11-15 |
Hoechst Celanese Corp |
Verfahren zum herstellen von photoresiststrukturen.
|
JPH07109510B2
(ja)
*
|
1985-04-02 |
1995-11-22 |
三菱化学株式会社 |
ポジ型フォトレジスト組成物
|
JPS61241745A
(ja)
*
|
1985-04-18 |
1986-10-28 |
Oki Electric Ind Co Ltd |
ネガ型フオトレジスト組成物及びレジストパタ−ン形成方法
|
JPH0766183B2
(ja)
*
|
1985-05-15 |
1995-07-19 |
三菱化学株式会社 |
ポジ型フオトレジスト組成物
|
US4929536A
(en)
*
|
1985-08-12 |
1990-05-29 |
Hoechst Celanese Corporation |
Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
US4931381A
(en)
*
|
1985-08-12 |
1990-06-05 |
Hoechst Celanese Corporation |
Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
|
ATE42419T1
(de)
*
|
1985-08-12 |
1989-05-15 |
Hoechst Celanese Corp |
Verfahren zur herstellung negativer bilder aus einem positiv arbeitenden photoresist.
|
US5256522A
(en)
*
|
1985-08-12 |
1993-10-26 |
Hoechst Celanese Corporation |
Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
US5217840A
(en)
*
|
1985-08-12 |
1993-06-08 |
Hoechst Celanese Corporation |
Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
|
EP0226741B1
(de)
*
|
1985-10-25 |
1989-08-02 |
Hoechst Celanese Corporation |
Verfahren zur Herstellung eines positiv arbeitenden Photoresists
|
DE3667109D1
(en)
*
|
1985-10-28 |
1989-12-28 |
Hoechst Celanese Corp |
Liquid for the treatment of a photoresist composition, and process therefor
|
ATE56545T1
(de)
*
|
1985-10-28 |
1990-09-15 |
Hoechst Celanese Corp |
Strahlungsempfindliches, positiv-arbeitendes gemisch und hieraus hergestelltes photoresistmaterial.
|
CA1307695C
(en)
*
|
1986-01-13 |
1992-09-22 |
Wayne Edmund Feely |
Photosensitive compounds and thermally stable and aqueous developablenegative images
|
CA1308596C
(en)
*
|
1986-01-13 |
1992-10-13 |
Rohm And Haas Company |
Microplastic structures and method of manufacture
|
JPS62194249A
(ja)
*
|
1986-02-20 |
1987-08-26 |
Fuji Photo Film Co Ltd |
ポジ型感光性組成物
|
DE3634371A1
(de)
*
|
1986-10-09 |
1988-04-21 |
Hoechst Ag |
Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial
|
JPH01501176A
(ja)
*
|
1986-10-20 |
1989-04-20 |
マクダーミッド,インコーポレーテッド |
像反転可能なシステム及びプロセス
|
US4863827A
(en)
*
|
1986-10-20 |
1989-09-05 |
American Hoechst Corporation |
Postive working multi-level photoresist
|
NL8700421A
(nl)
*
|
1987-02-20 |
1988-09-16 |
Philips Nv |
Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
|
DE3711264A1
(de)
*
|
1987-04-03 |
1988-10-13 |
Hoechst Ag |
Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial
|
DE3711263A1
(de)
*
|
1987-04-03 |
1988-10-13 |
Hoechst Ag |
Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von druckformen
|
DE3725949A1
(de)
*
|
1987-08-05 |
1989-02-16 |
Hoechst Ag |
Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von negativen reliefkopien
|
US5240807A
(en)
*
|
1987-08-20 |
1993-08-31 |
Hoechst Celanese Corporation |
Photoresist article having a portable, conformable, built-on mask
|
US4873176A
(en)
*
|
1987-08-28 |
1989-10-10 |
Shipley Company Inc. |
Reticulation resistant photoresist coating
|
DE3735852A1
(de)
*
|
1987-10-23 |
1989-05-03 |
Hoechst Ag |
Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial
|
WO1989005475A1
(en)
*
|
1987-12-10 |
1989-06-15 |
Macdermid, Incorporated |
Image-reversible dry-film photoresists
|
DE3812326A1
(de)
*
|
1988-04-14 |
1989-10-26 |
Basf Ag |
Positiv arbeitendes, strahlungsempfindliches gemisch auf basis von saeurespaltbaren und photochemisch saeurebildenden verbindungen und verfahren zur herstellung von reliefmustern und reliefbildern
|
JPH01293340A
(ja)
*
|
1988-05-20 |
1989-11-27 |
Japan Synthetic Rubber Co Ltd |
感放射線性樹脂組成物
|
DE3821584A1
(de)
*
|
1988-06-25 |
1989-12-28 |
Hoechst Ag |
Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
|
US5079131A
(en)
*
|
1988-08-29 |
1992-01-07 |
Shipley Company Inc. |
Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
|
KR900005226A
(ko)
*
|
1988-09-29 |
1990-04-13 |
윌리엄 비이 해리스 |
감광성 조성물 및 양화 상과 음화 상의 생성방법
|
GB8822956D0
(en)
*
|
1988-09-30 |
1988-11-09 |
Cookson Graphics Plc |
Baking treatment of lithographic printing plate
|
JP2505033B2
(ja)
*
|
1988-11-28 |
1996-06-05 |
東京応化工業株式会社 |
電子線レジスト組成物及びそれを用いた微細パタ―ンの形成方法
|
JP2583600B2
(ja)
*
|
1989-02-20 |
1997-02-19 |
東京応化工業株式会社 |
ネガ型電子線レジスト組成物
|
DE3907953A1
(de)
*
|
1989-03-11 |
1990-09-13 |
Hoechst Ag |
Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
|
JP2661671B2
(ja)
*
|
1989-03-20 |
1997-10-08 |
株式会社日立製作所 |
パタン形成材料とそれを用いたパタン形成方法
|
JPH02254450A
(ja)
*
|
1989-03-29 |
1990-10-15 |
Toshiba Corp |
レジスト
|
US5128232A
(en)
*
|
1989-05-22 |
1992-07-07 |
Shiply Company Inc. |
Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
|
US5210000A
(en)
*
|
1989-05-22 |
1993-05-11 |
Shipley Company Inc. |
Photoresist and method for forming a relief image utilizing composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
|
FR2648468B1
(fr)
*
|
1989-05-30 |
1992-12-04 |
Commissariat Energie Atomique |
Composition de resine sensible aux rayonnements uv et aux electrons
|
US5391465A
(en)
*
|
1989-06-20 |
1995-02-21 |
Rohm And Haas Company |
Method of using selected photoactive compounds in high resolution, acid hardening photoresists with near ultraviolet radiation wherein the photoresist comprise conventional deep UV photoacid generators
|
CA2019693A1
(en)
*
|
1989-07-07 |
1991-01-07 |
Karen Ann Graziano |
Acid-hardening photoresists of improved sensitivity
|
US5212046A
(en)
*
|
1989-10-17 |
1993-05-18 |
Shipley Company Inc. |
Near UV photoresist
|
DE69032077T2
(de)
*
|
1989-10-17 |
1998-12-03 |
Shipley Co., Inc., Newton, Mass. |
Fotoresist für nahes U.V.
|
JPH03142918A
(ja)
*
|
1989-10-30 |
1991-06-18 |
Matsushita Electron Corp |
レジストパターン形成方法
|
EP0704718B1
(en)
*
|
1989-12-01 |
2002-03-20 |
Tosoh Corporation |
Positive photosensitive composition for forming lenses
|
DE4006190A1
(de)
*
|
1990-02-28 |
1991-08-29 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
|
TW207009B
(ko)
*
|
1991-01-31 |
1993-06-01 |
Sumitomo Chemical Co |
|
DE4112974A1
(de)
*
|
1991-04-20 |
1992-10-22 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
|
DE4112972A1
(de)
*
|
1991-04-20 |
1992-10-22 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
|
DE4112965A1
(de)
*
|
1991-04-20 |
1992-10-22 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
|
DE4120174A1
(de)
*
|
1991-06-19 |
1992-12-24 |
Hoechst Ag |
Strahlungsempfindliche sulfonsaeureester und deren verwendung
|
DE4125042A1
(de)
*
|
1991-07-29 |
1993-02-04 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
|
US5292614A
(en)
*
|
1991-08-02 |
1994-03-08 |
Mitsubishi Kasei Corporation |
Negative photosensitive composition and method for forming a resist pattern
|
US5286600A
(en)
*
|
1991-08-27 |
1994-02-15 |
Mitsubishi Kasei Corporation |
Negative photosensitive composition and method for forming a resist pattern by means thereof
|
US6165697A
(en)
|
1991-11-15 |
2000-12-26 |
Shipley Company, L.L.C. |
Antihalation compositions
|
JPH05341522A
(ja)
*
|
1992-06-09 |
1993-12-24 |
Fuji Photo Film Co Ltd |
ネガ型フオトレジスト組成物
|
JPH0643637A
(ja)
*
|
1992-07-23 |
1994-02-18 |
Sumitomo Chem Co Ltd |
パターンの保持方法
|
JPH0667413A
(ja)
*
|
1992-08-20 |
1994-03-11 |
Sumitomo Chem Co Ltd |
ネガ型フォトレジスト組成物
|
TW288112B
(ko)
*
|
1993-06-02 |
1996-10-11 |
Sumitomo Chemical Co |
|
US5879856A
(en)
|
1995-12-05 |
1999-03-09 |
Shipley Company, L.L.C. |
Chemically amplified positive photoresists
|
US6190829B1
(en)
*
|
1996-09-16 |
2001-02-20 |
International Business Machines Corporation |
Low “K” factor hybrid photoresist
|
TW500976B
(en)
*
|
1999-08-25 |
2002-09-01 |
Tokyo Ohka Kogyo Co Ltd |
Multilayered body for photolithographic patterning
|
EP1469346B1
(en)
*
|
2002-01-23 |
2015-08-05 |
JSR Corporation |
Positive photosensitive insulating resin composition and cured object obtained therefrom
|
TWI322334B
(en)
|
2004-07-02 |
2010-03-21 |
Rohm & Haas Elect Mat |
Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
|
JP4789599B2
(ja)
|
2004-12-06 |
2011-10-12 |
ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. |
フォトレジスト組成物
|
EP1691238A3
(en)
|
2005-02-05 |
2009-01-21 |
Rohm and Haas Electronic Materials, L.L.C. |
Coating compositions for use with an overcoated photoresist
|
EP1762895B1
(en)
|
2005-08-29 |
2016-02-24 |
Rohm and Haas Electronic Materials, L.L.C. |
Antireflective Hard Mask Compositions
|
EP1829942B1
(en)
|
2006-02-28 |
2012-09-26 |
Rohm and Haas Electronic Materials, L.L.C. |
Coating compositions for use with an overcoated photoresist
|
JP5111895B2
(ja)
|
2006-03-10 |
2013-01-09 |
ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. |
フォトリソグラフィーの組成物および方法
|
JP2008191644A
(ja)
|
2006-10-30 |
2008-08-21 |
Rohm & Haas Electronic Materials Llc |
液浸リソグラフィーのための組成物および方法
|
TWI374478B
(en)
|
2007-02-13 |
2012-10-11 |
Rohm & Haas Elect Mat |
Electronic device manufacture
|
CN101308329B
(zh)
|
2007-04-06 |
2013-09-04 |
罗门哈斯电子材料有限公司 |
涂料组合物
|
JP2009199058A
(ja)
|
2007-11-05 |
2009-09-03 |
Rohm & Haas Electronic Materials Llc |
液浸リソグラフィーのための組成物および方法
|
JP2009199061A
(ja)
|
2007-11-12 |
2009-09-03 |
Rohm & Haas Electronic Materials Llc |
オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
|
EP2189846B1
(en)
|
2008-11-19 |
2015-04-22 |
Rohm and Haas Electronic Materials LLC |
Process for photolithography applying a photoresist composition comprising a block copolymer
|
EP2784584A1
(en)
|
2008-11-19 |
2014-10-01 |
Rohm and Haas Electronic Materials LLC |
Compositions comprising sulfonamide material and processes for photolithography
|
EP2189845B1
(en)
|
2008-11-19 |
2017-08-02 |
Rohm and Haas Electronic Materials LLC |
Compositions and processes for photolithography
|
EP2189847A3
(en)
|
2008-11-19 |
2010-07-21 |
Rohm and Haas Electronic Materials LLC |
Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
|
EP2204392A1
(en)
|
2008-12-31 |
2010-07-07 |
Rohm and Haas Electronic Materials LLC |
Compositions and processes for photolithography
|
EP2204694A1
(en)
|
2008-12-31 |
2010-07-07 |
Rohm and Haas Electronic Materials LLC |
Compositions and processes for photolithography
|
US8501383B2
(en)
|
2009-05-20 |
2013-08-06 |
Rohm And Haas Electronic Materials Llc |
Coating compositions for use with an overcoated photoresist
|
US9244352B2
(en)
|
2009-05-20 |
2016-01-26 |
Rohm And Haas Electronic Materials, Llc |
Coating compositions for use with an overcoated photoresist
|
CN101943860B
(zh)
|
2009-06-08 |
2013-12-11 |
罗门哈斯电子材料有限公司 |
平版印刷方法
|
US8338077B2
(en)
|
2009-06-22 |
2012-12-25 |
Rohm And Haas Electronic Materials Llc |
Photoacid generators and photoresists comprising same
|
CN101963755B
(zh)
|
2009-06-26 |
2012-12-19 |
罗门哈斯电子材料有限公司 |
自对准间隔物多重图形化方法
|
JP5698922B2
(ja)
|
2009-06-26 |
2015-04-08 |
ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. |
電子デバイスを形成する方法
|
EP2336824A1
(en)
|
2009-11-19 |
2011-06-22 |
Rohm and Haas Electronic Materials, L.L.C. |
Methods of forming electronic devices
|
TWI477495B
(zh)
|
2009-12-10 |
2015-03-21 |
羅門哈斯電子材料有限公司 |
光酸產生劑及含該光酸產生劑之光阻
|
KR101806155B1
(ko)
|
2009-12-10 |
2017-12-07 |
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콜레이트 광산 발생제 및 이를 포함하는 포토레지스트
|
CN104130172B
(zh)
|
2009-12-14 |
2016-05-18 |
罗门哈斯电子材料有限公司 |
磺酰光酸产生剂和包含该磺酰光酸产生剂的光刻胶
|
CN102207678B
(zh)
|
2010-01-25 |
2015-05-20 |
罗门哈斯电子材料有限公司 |
包含含氮化合物的光致抗蚀剂
|
JP5969171B2
(ja)
|
2010-03-31 |
2016-08-17 |
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光酸発生剤およびこれを含むフォトレジスト
|
JP5782283B2
(ja)
|
2010-03-31 |
2015-09-24 |
ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC |
新規のポリマーおよびフォトレジスト組成物
|
JP5756672B2
(ja)
|
2010-04-27 |
2015-07-29 |
ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC |
光酸発生剤およびこれを含むフォトレジスト
|
EP2428842A1
(en)
|
2010-09-14 |
2012-03-14 |
Rohm and Haas Electronic Materials LLC |
Photoresists comprising multi-amide component
|
JP2012136507A
(ja)
|
2010-11-15 |
2012-07-19 |
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塩基反応性光酸発生剤およびこれを含むフォトレジスト
|
JP2012113302A
(ja)
|
2010-11-15 |
2012-06-14 |
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塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
|
JP5961363B2
(ja)
|
2010-11-15 |
2016-08-02 |
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ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
|
JP6144005B2
(ja)
|
2010-11-15 |
2017-06-07 |
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糖成分を含む組成物およびフォトリソグラフィ方法
|
EP2472320A2
(en)
|
2010-12-30 |
2012-07-04 |
Rohm and Haas Electronic Materials LLC |
Compositions comprising base-reactive component and processes for photolithography
|
EP2472328B1
(en)
|
2010-12-31 |
2013-06-19 |
Rohm and Haas Electronic Materials LLC |
Coating compositions for use with an overcoated photoresist
|
EP2472329B1
(en)
|
2010-12-31 |
2013-06-05 |
Rohm and Haas Electronic Materials LLC |
Coating compositions for use with an overcoated photoresist
|
EP2511766B1
(en)
|
2011-04-14 |
2013-07-31 |
Rohm and Haas Electronic Materials LLC |
Topcoat compositions for photoresist and immersion photolithography process using them
|
WO2013036502A1
(en)
|
2011-09-07 |
2013-03-14 |
Microchem Corp. |
Epoxy formulations and processes for fabrication of relief patterns on low surface energy substrates
|
US9011591B2
(en)
|
2011-09-21 |
2015-04-21 |
Dow Global Technologies Llc |
Compositions and antireflective coatings for photolithography
|
US11635688B2
(en)
|
2012-03-08 |
2023-04-25 |
Kayaku Advanced Materials, Inc. |
Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
|
TWI527792B
(zh)
|
2012-06-26 |
2016-04-01 |
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|
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|
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|
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|
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|
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(en)
|
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|
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|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(zh)
|
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|
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(en)
|
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|
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|
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|
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|
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|
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(ja)
|
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|
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|
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|