HK1207742A1 - 半導體發光元件 - Google Patents

半導體發光元件

Info

Publication number
HK1207742A1
HK1207742A1 HK15108327.0A HK15108327A HK1207742A1 HK 1207742 A1 HK1207742 A1 HK 1207742A1 HK 15108327 A HK15108327 A HK 15108327A HK 1207742 A1 HK1207742 A1 HK 1207742A1
Authority
HK
Hong Kong
Prior art keywords
light emitting
emitting element
semiconductor light
semiconductor
light
Prior art date
Application number
HK15108327.0A
Other languages
English (en)
Inventor
上山智岩谷素顯天野浩赤崎勇近藤俊行寺前文晴北野司鈴木敦志
Original Assignee
El Seed Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by El Seed Corp filed Critical El Seed Corp
Publication of HK1207742A1 publication Critical patent/HK1207742A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
HK15108327.0A 2009-09-07 2015-08-27 半導體發光元件 HK1207742A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009205931 2009-09-07

Publications (1)

Publication Number Publication Date
HK1207742A1 true HK1207742A1 (zh) 2016-02-05

Family

ID=43649218

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15108327.0A HK1207742A1 (zh) 2009-09-07 2015-08-27 半導體發光元件

Country Status (8)

Country Link
US (2) US8941136B2 (zh)
EP (2) EP3293775A1 (zh)
JP (6) JP4768894B2 (zh)
KR (3) KR101417541B1 (zh)
CN (2) CN102484183B (zh)
ES (1) ES2663320T3 (zh)
HK (1) HK1207742A1 (zh)
WO (1) WO2011027679A1 (zh)

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WO2015114936A1 (ja) * 2014-01-30 2015-08-06 エルシード株式会社 発光素子
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JP5740031B2 (ja) * 2014-05-12 2015-06-24 エルシード株式会社 Ｌｅｄ素子
CN106463577A (zh) * 2014-06-17 2017-02-22 崇高种子公司 发光元件的制造方法及发光元件
WO2015194382A1 (ja) * 2014-06-17 2015-12-23 エルシード株式会社 発光素子の製造方法及び発光素子
JP5866044B1 (ja) * 2014-11-13 2016-02-17 エルシード株式会社 発光素子の製造方法及び発光素子
CN104362232B (zh) * 2014-10-28 2019-03-29 天津三安光电有限公司 一种发光二极管
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Also Published As

Publication number Publication date
CN102484183A (zh) 2012-05-30
CN102484183B (zh) 2015-01-14
JP2015099939A (ja) 2015-05-28
JP6410751B2 (ja) 2018-10-24
US20150091039A1 (en) 2015-04-02
ES2663320T3 (es) 2018-04-12
EP2477238A4 (en) 2015-03-11
KR20140082852A (ko) 2014-07-02
EP3293775A1 (en) 2018-03-14
KR20170102364A (ko) 2017-09-08
JP2013042162A (ja) 2013-02-28
WO2011027679A1 (ja) 2011-03-10
JP2018198340A (ja) 2018-12-13
JPWO2011027679A1 (ja) 2013-02-04
EP2477238B1 (en) 2017-12-20
JP2016146502A (ja) 2016-08-12
CN104600167B (zh) 2017-12-12
JP5126800B2 (ja) 2013-01-23
KR101417541B1 (ko) 2014-07-08
CN104600167A (zh) 2015-05-06
KR20120068857A (ko) 2012-06-27
JP5706862B2 (ja) 2015-04-22
US20120228656A1 (en) 2012-09-13
JP5913664B2 (ja) 2016-04-27
JP2011176379A (ja) 2011-09-08
JP4768894B2 (ja) 2011-09-07
EP2477238A1 (en) 2012-07-18
US8941136B2 (en) 2015-01-27

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