JP6785455B2 - 発光ダイオード素子、及び発光ダイオード素子の製造方法 - Google Patents
発光ダイオード素子、及び発光ダイオード素子の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 129
- 150000004767 nitrides Chemical class 0.000 claims description 118
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 102
- 229910002601 GaN Inorganic materials 0.000 description 100
- 239000013078 crystal Substances 0.000 description 14
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 239000002994 raw material Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005136 cathodoluminescence Methods 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Description
フリップチップ型の発光ダイオード素子であって、
キャリア濃度が1×1019cm−3以上で且つ3×1020cm−3未満である第一のn型III族窒化物半導体層、
キャリア濃度が5×1017cm−3以上で且つ1×1019cm−3未満である第二のn型III族窒化物半導体層、
III族窒化物半導体で構成される発光層、及び、
p型III族窒化物半導体層、が順に積層された積層体構造を備え、
前記第一のn型III族窒化物半導体層と前記第二のn型III族窒化物半導体層との界面の凹凸の高低差は、前記第二のn型III族窒化物半導体層と前記発光層との界面の凹凸の高低差よりも大である、
発光ダイオード素子である。
フリップチップ型の発光ダイオード素子の製造方法であって、
ファセット成長が優先的に生ずる条件下で、キャリア濃度が1×1019cm−3以上で且つ3×1020cm−3未満となるように、第一のn型III族窒化物半導体層を下地基板上に形成する工程と、
平坦成長が優先的に生ずる条件下で、キャリア濃度が5×1017cm−3以上で且つ1×1019cm−3未満となるように、第二のn型III族窒化物半導体層を前記第一のn型III族窒化物半導体層上に形成する工程と、
III族窒化物半導体で構成される発光層を前記第二のn型III族窒化物半導体層上に形成する工程と、
p型III族窒化物半導体層を前記発光層上に形成する工程と、
を備える、発光ダイオード素子の製造方法である。
図1は、一実施形態に係る発光ダイオード素子を構成する積層体構造(以下、「LED構造」とも称する)100を示す図である。
(結晶成長工程)
次に、図1、図3、図4を参照して、LED構造100を形成するための結晶成長工程について詳述する。
次に、図2、図5、図6を参照して、上記の手法で形成されたLED構造100から、発光ダイオード素子200を形成する工程について詳述する。
以上のように、本実施形態に係るフリップチップ型の発光ダイオード素子200は、キャリア濃度が1×1019cm−3以上で且つ3×1020cm−3未満である第一のn型III族窒化物半導体層102、キャリア濃度が5×1017cm−3以上で且つ1×1019cm−3未満である第二のn型III族窒化物半導体層103、III族窒化物半導体で構成される発光層104、及び、p型III族窒化物半導体層105、が順に積層された積層体構造(LED構造)100を備え、第一のn型III族窒化物半導体層102と第二のn型III族窒化物半導体層103の界面の凹凸の高低差は、第二のn型III族窒化物半導体層103と発光層104との界面の凹凸の高低差よりも大である構成となっている。
図8は、変形例1に係る発光ダイオード素子200の構成を示す図である。
図9は、変形例2に係る発光ダイオード素子200の構成を示す図である。
上記実施形態では、第二のn型GaN層103を、一回の結晶成長プロセスにて形成する態様を示した。しかしながら、第一のn型GaN層102の凹凸が非常に大きい場合等は、第二のn型GaN層103の表面を完全な平坦面とすることは難しく、当該第二のn型GaN層103を形成した後に数百nm程度の凹凸が残ることが懸念される。又、平坦化のために第二のn型GaN層103の厚みが厚くなりすぎたりすることが懸念される。
101 下地基板
102 第一のn型III族窒化物半導体層
103 第二のn型III族窒化物半導体層
104 発光層
105 p型III族窒化物半導体層
200 発光ダイオード素子
206 保護膜
207 n側オーミック電極
208 p側オーミック電極
209 パッド電極
210 サブマウント側電極
211 サブマウント基板
Claims (6)
- フリップチップ型の発光ダイオード素子であって、
ファセット成長により形成されたキャリア濃度が1×1019cm−3以上で且つ3×1020cm−3未満である第一のn型III族窒化物半導体層、
平坦成長により形成されたキャリア濃度が5×1017cm−3以上で且つ1×1019cm−3未満である第二のn型III族窒化物半導体層、
III族窒化物半導体で構成される発光層、及び、
p型III族窒化物半導体層、が順に積層された積層体構造を備え、
前記第一のn型III族窒化物半導体層と前記第二のn型III族窒化物半導体層との界面の凹凸の高低差は、前記第二のn型III族窒化物半導体層と前記発光層との界面の凹凸の高低差よりも大であり、
前記第一のn型III族窒化物半導体層のドナー不純物は酸素であり、
前記第一のn型III族窒化物半導体層及び前記第二のn型III族窒化物半導体層の両方にオーミック接触するn側オーミック電極と、前記p型III族窒化物半導体層にオーミック接触するp側オーミック電極と、をさらに備え、
前記n側オーミック電極と前記p側オーミック電極とは前記積層体構造の同一面側に配設され、
前記n側オーミック電極と前記積層体構造との接触面は、前記第一のn型III族窒化物半導体層と前記第二のn型III族窒化物半導体層との界面の前記凹凸が形成された領域に位置している、
発光ダイオード素子。 - 前記第一のn型III族窒化物半導体層と前記第二のn型III族窒化物半導体層との界面の凹凸の高低差は、1μm以上で且つ10μm以下である
請求項1に記載の発光ダイオード素子。 - 前記積層体構造は、前記発光層の発光波長に対して透明な絶縁性基板上に形成されている
請求項1又は2に記載の発光ダイオード素子。 - 前記絶縁性基板は、サファイア、SiC、ZnO、Ga2O3、又は、ScAlMgO4のいずれかによって構成されている
請求項3に記載の発光ダイオード素子。 - 前記第一のn型III族窒化物半導体層の平均厚みは10μm以上で且つ100μm以下である
請求項1〜4のいずれか一項に記載の発光ダイオード素子。 - フリップチップ型の発光ダイオード素子の製造方法であって、
ファセット成長が優先的に生ずる条件下で、キャリア濃度が1×1019cm−3以上で且つ3×1020cm−3未満となるように、第一のn型III族窒化物半導体層を下地基板上に形成する工程と、
平坦成長が優先的に生ずる条件下で、キャリア濃度が5×1017cm−3以上で且つ1×1019cm−3未満となるように、第二のn型III族窒化物半導体層を前記第一のn型III族窒化物半導体層上に形成する工程と、
III族窒化物半導体で構成される発光層を前記第二のn型III族窒化物半導体層上に形成する工程と、
p型III族窒化物半導体層を前記発光層上に形成する工程と、
前記第一のn型III族窒化物半導体層及び前記第二のn型III族窒化物半導体層の両方にオーミック接触するn側オーミック電極と、前記p型III族窒化物半導体層にオーミック接触するp側オーミック電極と、を形成する工程と、
を備え、
前記第一のn型III族窒化物半導体層のドナー不純物は酸素であり、
前記n側オーミック電極と前記p側オーミック電極とは前記積層体構造の同一面側に配設され、
前記第一のn型III族窒化物半導体層は、前記発光ダイオード素子の動作電流が当該第一のn型III族窒化物半導体層の内部を横方向に通流するように一体的に形成される、
発光ダイオード素子の製造方法。
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