JPWO2019097963A1 - Iii族窒化物半導体 - Google Patents
Iii族窒化物半導体 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 45
- 239000010410 layer Substances 0.000 claims abstract description 314
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 67
- 239000002346 layers by function Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 93
- 239000002019 doping agent Substances 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 150000002602 lanthanoids Chemical class 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims 1
- 239000011777 magnesium Substances 0.000 description 108
- 238000009792 diffusion process Methods 0.000 description 26
- 239000012535 impurity Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 230000007547 defect Effects 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000001629 suppression Effects 0.000 description 7
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005136 cathodoluminescence Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- QHGSGZLLHBKSAH-UHFFFAOYSA-N hydridosilicon Chemical compound [SiH] QHGSGZLLHBKSAH-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
Description
本実施の形態に用いられる基板としては、RAMgO4で表される単結晶体(一般式において、Rは、Sc、In、Y、およびランタノイド系元素からなる群から選択される一つまたは複数の三価の元素を表し、Aは、Fe(III)、Ga、およびAlからなる群から選択される一つまたは複数の三価の元素を表す)からなるRAMgO4基板が挙げられる。以下、RAMgO4基板がScAlMgO4基板である場合を例に説明するが、本実施の形態に用いる基板は、ScAlMgO4基板に限定されない。
本実施の形態の発光ダイオード200(III族窒化物半導体20)は、図2に示すように、ScAlMgO4基板11上にSiドープn−GaN層2、Siドープn−InGaN層3、Siドープn−AlGaN層4、InGaN発光層5、p−AlGaN層6が配置された構成を有する。なお、図2には、当該発光ダイオード200内でのSiドープn−GaN層2からInGaN発光層5までの不純物濃度プロファイル(MgおよびSi)も示す(左図)。また、Siドープn−GaN層2、Siドープn−InGaN層3、Siドープn−AlGaN層4、InGaN発光層5、およびp−AlGaN層6については、実施の形態1と同様であるため、これらについての詳しい説明は省略する。
なお、上述の実施の形態では(0001)面ScAlMgO4基板を用いてGaNの+c面方向の成長について開示したが、GaNの成長条件を適宜調整することにより−c面方向(N面)の成長についても同様の効果が得られる。またc軸を任意の方向に0.2〜5度程度傾斜させたオフ基板を用いた場合にも、同様の効果が得られる。
本実施の形態に係るパワーデバイスは、AlxGa1−xN(0≦x<1)で構成されるGaN層と、前記GaN層上に配置された、InGaNで構成されるInGaN層と、前記InGaN層上に配置された、AlyGa1−yN(0≦y<1)で構成されるAlGaN層と、前記AlGaN層上に配置された機能層の一例であるチャネル層と、を備え、前記GaN層のMg濃度は、前記AlGaN層のMg濃度よりも大であり、前記AlGaN層中のドーパント濃度が、前記AlGaN層のMg濃度より大である。
2、32、42、51 n−GaN層
3、33、52 n−InGaN層
4、34 n−AlGaN層
5、53 InGaN発光層
6、54 p−AlGaN層
10、20 III族窒化物半導体
62 GaN第1バッファ層
63 InGaN拡散抑制層
64 GaN第2バッファ層
65 AlGaNバックバリア層
66 GaNチャネル層
67 AlGaNバリア層
68 p型GaN層
100、200 発光ダイオード
601 ソース電極
602 ゲート電極
603 ドレイン電極
Claims (10)
- AlxGa1−xN(0≦x<1)で構成されるGaN層と、
前記GaN層上に配置された、InGaNで構成されるInGaN層と、
前記InGaN層上に配置された、ドーパントを含むAlyGa1−yN(0≦y<1)で構成されるAlGaN層と、
前記AlGaN層上に配置された機能層と、を備え、
前記GaN層のMg濃度は、前記AlGaN層のMg濃度よりも大であり、
前記AlGaN層のドーパント濃度が、前記AlGaN層のMg濃度より大である、III族窒化物半導体。 - 前記GaN層は、ドーパントを含み、かつ
前記InGaN層側に、ドーパント濃度がMg濃度より大である第1領域と、
前記第1領域と反対側に、ドーパント濃度がMg濃度より小である第2領域と、
を有する、請求項1に記載のIII族窒化物半導体。 - 前記GaN層の前記第2領域のMg濃度は、1×1019cm−3以上かつ1×1022cm−3以下である、請求項2に記載のIII族窒化物半導体。
- 前記GaN層の前記第2領域の厚さは、0.5μm以上かつ2μm以下である、請求項2または3に記載のIII族窒化物半導体。
- 前記GaN層は、基板上に配され、
前記基板は、一般式RAMgO4で表される単結晶体(一般式において、Rは、Sc、In、Y、およびランタノイド系元素からなる群から選択される一つまたは複数の三価の元素を表し、Aは、Fe(III)、Ga、およびAlからなる群から選択される一つまたは複数の三価の元素を表す)からなるRAMgO4基板である、請求項1〜4のいずれか一項に記載のIII族窒化物半導体。 - 前記InGaN層における厚さ方向のMg濃度の減少率は、前記GaN層における厚さ方向のMg濃度の減少率よりも大である、請求項1〜5のいずれか一項に記載のIII族窒化物半導体。
- 前記AlGaN層に含まれる前記ドーパントはn型ドーパントである、請求項1〜6のいずれか一項に記載のIII族窒化物半導体。
- 前記n型ドーパントは、Siである、請求項7に記載のIII族窒化物半導体。
- 前記機能層は、発光層である、請求項1〜8のいずれか一項に記載のIII族窒化物半導体。
- 前記機能層は、チャネル層である、請求項1〜8のいずれか一項に記載のIII族窒化物半導体。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002208732A (ja) * | 1994-09-19 | 2002-07-26 | Toshiba Corp | 化合物半導体装置 |
JP2007214378A (ja) * | 2006-02-09 | 2007-08-23 | Rohm Co Ltd | 窒化物系半導体素子 |
JP2009135466A (ja) * | 2007-10-29 | 2009-06-18 | Mitsubishi Chemicals Corp | 半導体発光素子およびその製造方法 |
JP2013544436A (ja) * | 2010-11-02 | 2013-12-12 | コーニンクレッカ フィリップス エヌ ヴェ | Iii族窒化物発光デバイス |
JP2017168783A (ja) * | 2016-03-18 | 2017-09-21 | 国立大学法人東北大学 | 半導体装置およびその製造方法 |
JP2017183697A (ja) * | 2016-03-23 | 2017-10-05 | パナソニックIpマネジメント株式会社 | Iii族窒化物半導体及びその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5693963A (en) * | 1994-09-19 | 1997-12-02 | Kabushiki Kaisha Toshiba | Compound semiconductor device with nitride |
CN1160801C (zh) * | 1995-11-06 | 2004-08-04 | 日亚化学工业株式会社 | 氮化物半导体器件 |
US6495867B1 (en) * | 2000-07-26 | 2002-12-17 | Axt, Inc. | InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire |
KR100664986B1 (ko) * | 2004-10-29 | 2007-01-09 | 삼성전기주식회사 | 나노로드를 이용한 질화물계 반도체 소자 및 그 제조 방법 |
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JP5918749B2 (ja) * | 2011-08-10 | 2016-05-18 | 日本碍子株式会社 | 13族元素窒化物膜およびその積層体 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002208732A (ja) * | 1994-09-19 | 2002-07-26 | Toshiba Corp | 化合物半導体装置 |
JP2007214378A (ja) * | 2006-02-09 | 2007-08-23 | Rohm Co Ltd | 窒化物系半導体素子 |
JP2009135466A (ja) * | 2007-10-29 | 2009-06-18 | Mitsubishi Chemicals Corp | 半導体発光素子およびその製造方法 |
JP2013544436A (ja) * | 2010-11-02 | 2013-12-12 | コーニンクレッカ フィリップス エヌ ヴェ | Iii族窒化物発光デバイス |
JP2017168783A (ja) * | 2016-03-18 | 2017-09-21 | 国立大学法人東北大学 | 半導体装置およびその製造方法 |
JP2017183697A (ja) * | 2016-03-23 | 2017-10-05 | パナソニックIpマネジメント株式会社 | Iii族窒化物半導体及びその製造方法 |
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