HK1163348A1 - 半導體發光器件 - Google Patents

半導體發光器件

Info

Publication number
HK1163348A1
HK1163348A1 HK12103875.0A HK12103875A HK1163348A1 HK 1163348 A1 HK1163348 A1 HK 1163348A1 HK 12103875 A HK12103875 A HK 12103875A HK 1163348 A1 HK1163348 A1 HK 1163348A1
Authority
HK
Hong Kong
Prior art keywords
light emitting
emitting device
semiconductor light
semiconductor
light
Prior art date
Application number
HK12103875.0A
Other languages
English (en)
Inventor
Miyuki Iduka
Yosuke Akimoto
Akihiro Kojima
Yoshiaki Sugizaki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of HK1163348A1 publication Critical patent/HK1163348A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
HK12103875.0A 2010-05-24 2012-04-19 半導體發光器件 HK1163348A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010118697A JP5356312B2 (ja) 2010-05-24 2010-05-24 半導体発光装置

Publications (1)

Publication Number Publication Date
HK1163348A1 true HK1163348A1 (zh) 2012-09-07

Family

ID=44019032

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12103875.0A HK1163348A1 (zh) 2010-05-24 2012-04-19 半導體發光器件

Country Status (5)

Country Link
US (1) US8729592B2 (zh)
EP (1) EP2390933B1 (zh)
JP (1) JP5356312B2 (zh)
HK (1) HK1163348A1 (zh)
TW (1) TWI445207B (zh)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102792471A (zh) * 2010-04-01 2012-11-21 松下电器产业株式会社 发光二极管元件及发光二极管装置
JP5343040B2 (ja) * 2010-06-07 2013-11-13 株式会社東芝 半導体発光装置
JP5537446B2 (ja) 2011-01-14 2014-07-02 株式会社東芝 発光装置、発光モジュール、発光装置の製造方法
JP5603793B2 (ja) 2011-02-09 2014-10-08 株式会社東芝 半導体発光装置
JP5603813B2 (ja) 2011-03-15 2014-10-08 株式会社東芝 半導体発光装置及び発光装置
JP5535114B2 (ja) 2011-03-25 2014-07-02 株式会社東芝 発光装置、発光モジュール、発光装置の製造方法
JP5642623B2 (ja) 2011-05-17 2014-12-17 株式会社東芝 半導体発光装置
RU2597071C2 (ru) 2011-05-24 2016-09-10 Конинклейке Филипс Н.В. МЕТАЛЛИЧЕСКИЙ НАПОЛНИТЕЛЬ, РАЗДЕЛЯЮЩИЙ СЛОИ р- И n-ТИПА, ДЛЯ СВЕТОИЗЛУЧАЮЩИХ ДИОДОВ, МОНТИРУЕМЫХ МЕТОДОМ ПЕРЕВЕРНУТОГО КРИСТАЛЛА
JP5662277B2 (ja) 2011-08-08 2015-01-28 株式会社東芝 半導体発光装置及び発光モジュール
JP2013065726A (ja) 2011-09-16 2013-04-11 Toshiba Corp 半導体発光装置及びその製造方法
KR102012292B1 (ko) * 2011-12-08 2019-08-20 루미리즈 홀딩 비.브이. 두꺼운 금속층들을 가진 반도체 발광 디바이스
US20130240934A1 (en) * 2012-03-14 2013-09-19 Samsung Electronics Co., Ltd. Light emitting element package and method of manufacturing the same
JP5985322B2 (ja) 2012-03-23 2016-09-06 株式会社東芝 半導体発光装置及びその製造方法
JP5710532B2 (ja) * 2012-03-26 2015-04-30 株式会社東芝 半導体発光装置及びその製造方法
CN102646769B (zh) * 2012-03-30 2015-08-05 达亮电子（苏州）有限公司 发光二极管组件、发光二极管封装结构及其制造方法
WO2013171632A1 (en) * 2012-05-17 2013-11-21 Koninklijke Philips N.V. Method of separating a wafer of semiconductor devices
FR2992465B1 (fr) * 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
FR2992466A1 (fr) * 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
JP6239311B2 (ja) * 2012-08-20 2017-11-29 エルジー イノテック カンパニー リミテッド 発光素子
KR101886156B1 (ko) * 2012-08-21 2018-09-11 엘지이노텍 주식회사 발광소자
DE102012113003A1 (de) * 2012-12-21 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
JP2015050256A (ja) * 2013-08-30 2015-03-16 株式会社東芝 窒化物半導体発光装置
FR3023065B1 (fr) * 2014-06-27 2017-12-15 Commissariat Energie Atomique Dispositif optoelectronique a jonction p-n permettant une ionisation de dopants par effet de champ
FR3023061B1 (fr) * 2014-06-27 2017-12-15 Commissariat Energie Atomique Diode de structure mesa a surface de contact sensiblement plane
CN105449064B (zh) * 2014-09-02 2018-02-23 展晶科技(深圳)有限公司 发光二极管及其制造方法
KR102322841B1 (ko) * 2014-12-24 2021-11-08 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 어레이
KR102322842B1 (ko) * 2014-12-26 2021-11-08 엘지이노텍 주식회사 발광 소자 어레이
KR102345751B1 (ko) 2015-01-05 2022-01-03 삼성전자주식회사 반도체 발광소자 패키지 및 그 제조 방법
JP6545981B2 (ja) 2015-03-12 2019-07-17 アルパッド株式会社 半導体発光装置
DE102015107586B4 (de) 2015-05-13 2023-10-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement
FR3038127B1 (fr) * 2015-06-24 2017-06-23 Commissariat Energie Atomique Procede de fabrication d'une pluralite de dipoles en forme d'ilots ayant des electrodes auto-alignees
US11387392B2 (en) * 2018-12-25 2022-07-12 Nichia Corporation Light-emitting device and display device
JP7348520B2 (ja) 2018-12-25 2023-09-21 日亜化学工業株式会社 発光装置及び表示装置
JP7052188B2 (ja) * 2019-06-13 2022-04-12 日亜化学工業株式会社 発光素子の製造方法
CN112582511B (zh) * 2019-09-30 2022-08-02 成都辰显光电有限公司 微发光二极管芯片及显示面板
CN112768484B (zh) * 2019-11-04 2024-03-26 厦门三安光电有限公司 发光二极管及其制作方法
CN112968089B (zh) * 2020-11-26 2022-04-15 重庆康佳光电技术研究院有限公司 发光器件及其制作方法、背板及其制作方法
US11955583B2 (en) * 2020-12-01 2024-04-09 Lumileds Llc Flip chip micro light emitting diodes
US11705534B2 (en) * 2020-12-01 2023-07-18 Lumileds Llc Methods of making flip chip micro light emitting diodes
CN115249757A (zh) * 2022-09-20 2022-10-28 南昌凯捷半导体科技有限公司 一种无台阶mini LED芯片及其制作方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2661420B2 (ja) 1991-07-16 1997-10-08 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP3557033B2 (ja) * 1995-03-24 2004-08-25 三洋電機株式会社 半導体発光素子およびその製造方法
US5798536A (en) * 1996-01-25 1998-08-25 Rohm Co., Ltd. Light-emitting semiconductor device and method for manufacturing the same
JP3556080B2 (ja) * 1997-11-14 2004-08-18 日亜化学工業株式会社 窒化物半導体素子
JP2000150958A (ja) 1998-11-13 2000-05-30 Sanyo Electric Co Ltd 半導体発光素子
JP2002043633A (ja) * 2000-07-25 2002-02-08 Stanley Electric Co Ltd 白色発光ダイオ−ド
JP3589187B2 (ja) * 2000-07-31 2004-11-17 日亜化学工業株式会社 発光装置の形成方法
JP4644947B2 (ja) * 2001-02-05 2011-03-09 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP2002353503A (ja) * 2001-05-29 2002-12-06 Seiwa Electric Mfg Co Ltd 窒化ガリウム系化合物半導体発光素子
JP4214704B2 (ja) * 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
CN100595938C (zh) * 2002-08-01 2010-03-24 日亚化学工业株式会社 半导体发光元件及其制造方法、使用此的发光装置
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
TWI244228B (en) * 2005-02-03 2005-11-21 United Epitaxy Co Ltd Light emitting device and manufacture method thereof
KR100616693B1 (ko) 2005-08-09 2006-08-28 삼성전기주식회사 질화물 반도체 발광 소자
JP2007288097A (ja) * 2006-04-20 2007-11-01 Showa Denko Kk フリップチップ型半導体発光素子用の実装基板、フリップチップ型半導体発光素子の実装構造及び発光ダイオードランプ
JP2007184316A (ja) * 2006-01-04 2007-07-19 Toshiba Corp 半導体装置
KR20070111091A (ko) 2006-05-16 2007-11-21 삼성전기주식회사 질화물계 반도체 발광다이오드
WO2008026902A1 (en) 2006-08-31 2008-03-06 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device
WO2008031280A1 (en) 2006-09-13 2008-03-20 Helio Optoelectronics Corporation Light emitting diode structure
DE102007019776A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8431950B2 (en) 2008-05-23 2013-04-30 Chia-Lun Tsai Light emitting device package structure and fabricating method thereof
JP5286045B2 (ja) * 2008-11-19 2013-09-11 スタンレー電気株式会社 半導体発光素子の製造方法
JP4724222B2 (ja) 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
JP5197654B2 (ja) * 2010-03-09 2013-05-15 株式会社東芝 半導体発光装置及びその製造方法

Also Published As

Publication number Publication date
US20110284910A1 (en) 2011-11-24
JP5356312B2 (ja) 2013-12-04
EP2390933A1 (en) 2011-11-30
EP2390933B1 (en) 2015-05-20
US8729592B2 (en) 2014-05-20
TW201143141A (en) 2011-12-01
TWI445207B (zh) 2014-07-11
JP2011249425A (ja) 2011-12-08

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