HK1190821A1 - 半導體發光器件 - Google Patents

半導體發光器件

Info

Publication number
HK1190821A1
HK1190821A1 HK14103687.6A HK14103687A HK1190821A1 HK 1190821 A1 HK1190821 A1 HK 1190821A1 HK 14103687 A HK14103687 A HK 14103687A HK 1190821 A1 HK1190821 A1 HK 1190821A1
Authority
HK
Hong Kong
Prior art keywords
light emitting
emitting device
semiconductor light
semiconductor
light
Prior art date
Application number
HK14103687.6A
Other languages
English (en)
Inventor
Miyuki Izuka
Susumu Obata
Akiya Kimura
Akihiro Kojima
Yosuke Akimoto
Yoshiaki Sugizaki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of HK1190821A1 publication Critical patent/HK1190821A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
HK14103687.6A 2011-02-09 2014-04-17 半導體發光器件 HK1190821A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011025812A JP5603793B2 (ja) 2011-02-09 2011-02-09 半導体発光装置
PCT/JP2011/003245 WO2012107967A1 (en) 2011-02-09 2011-06-08 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
HK1190821A1 true HK1190821A1 (zh) 2014-08-08

Family

ID=44629848

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14103687.6A HK1190821A1 (zh) 2011-02-09 2014-04-17 半導體發光器件

Country Status (8)

Country Link
US (2) US8860075B2 (zh)
EP (1) EP2673813B1 (zh)
JP (1) JP5603793B2 (zh)
KR (1) KR20130097815A (zh)
CN (1) CN103403895B (zh)
HK (1) HK1190821A1 (zh)
TW (1) TWI429108B (zh)
WO (1) WO2012107967A1 (zh)

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US9111950B2 (en) * 2006-09-28 2015-08-18 Philips Lumileds Lighting Company, Llc Process for preparing a semiconductor structure for mounting
JP5662277B2 (ja) 2011-08-08 2015-01-28 株式会社東芝 半導体発光装置及び発光モジュール
JP2013065726A (ja) 2011-09-16 2013-04-11 Toshiba Corp 半導体発光装置及びその製造方法
US20130240934A1 (en) * 2012-03-14 2013-09-19 Samsung Electronics Co., Ltd. Light emitting element package and method of manufacturing the same
TWI489658B (zh) * 2012-05-25 2015-06-21 Toshiba Kk 半導體發光裝置及光源單元
US9093618B2 (en) * 2012-08-24 2015-07-28 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
CN203456494U (zh) * 2012-12-26 2014-02-26 东莞市正光光电科技有限公司 覆晶式led芯片
JP2015195332A (ja) 2014-03-27 2015-11-05 株式会社東芝 半導体発光装置及びその製造方法
JP6384202B2 (ja) * 2014-08-28 2018-09-05 日亜化学工業株式会社 発光装置の製造方法
US9704823B2 (en) * 2015-03-21 2017-07-11 Nxp B.V. Reduction of defects in wafer level chip scale package (WLCSP) devices
US10615308B2 (en) 2015-06-01 2020-04-07 Nichia Corporation Light emitting device
DE102015114579B4 (de) * 2015-09-01 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
JP6904720B2 (ja) * 2017-02-14 2021-07-21 シチズン電子株式会社 発光体
KR102115189B1 (ko) * 2018-11-09 2020-05-26 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
DE102018131579A1 (de) * 2018-12-10 2020-06-10 Osram Opto Semiconductors Gmbh Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
US11804416B2 (en) * 2020-09-08 2023-10-31 UTAC Headquarters Pte. Ltd. Semiconductor device and method of forming protective layer around cavity of semiconductor die
CN112134024B (zh) * 2020-09-25 2022-07-29 合肥工业大学 一种基于全石墨的三维结构宽带超材料吸波体

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JP3342322B2 (ja) 1996-11-27 2002-11-05 シャープ株式会社 Ｌｅｄ素子表示装置の製造方法
US6331450B1 (en) * 1998-12-22 2001-12-18 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device using group III nitride compound
JP2000244012A (ja) 1998-12-22 2000-09-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
JP3589187B2 (ja) 2000-07-31 2004-11-17 日亜化学工業株式会社 発光装置の形成方法
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
JP4305102B2 (ja) 2003-09-03 2009-07-29 豊田合成株式会社 半導体発光素子用複合基板及びその製造方法、並びに半導体発光素子の製造方法
JP2005079551A (ja) 2003-09-03 2005-03-24 Toyoda Gosei Co Ltd 半導体発光素子形成用複合基板及びその製造方法、並びに半導体発光素子の製造方法。
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP2007123704A (ja) * 2005-10-31 2007-05-17 Stanley Electric Co Ltd 表面実装型ｌｅｄ
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JP4799606B2 (ja) * 2008-12-08 2011-10-26 株式会社東芝 光半導体装置及び光半導体装置の製造方法
JP4724222B2 (ja) 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
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JP5349260B2 (ja) 2009-11-19 2013-11-20 株式会社東芝 半導体発光装置及びその製造方法
JP5101645B2 (ja) 2010-02-24 2012-12-19 株式会社東芝 半導体発光装置
JP5202559B2 (ja) 2010-03-09 2013-06-05 株式会社東芝 半導体発光装置及びその製造方法
JP5197654B2 (ja) 2010-03-09 2013-05-15 株式会社東芝 半導体発光装置及びその製造方法
JP2011199193A (ja) 2010-03-23 2011-10-06 Toshiba Corp 発光装置及びその製造方法
JP5101650B2 (ja) 2010-03-25 2012-12-19 株式会社東芝 半導体発光装置及びその製造方法
JP5356312B2 (ja) 2010-05-24 2013-12-04 株式会社東芝 半導体発光装置
JP5325834B2 (ja) 2010-05-24 2013-10-23 株式会社東芝 半導体発光装置及びその製造方法
JP5281612B2 (ja) 2010-05-26 2013-09-04 株式会社東芝 半導体発光装置及びその製造方法
JP5426481B2 (ja) 2010-05-26 2014-02-26 株式会社東芝 発光装置
JP2011253925A (ja) 2010-06-02 2011-12-15 Toshiba Corp 発光装置の製造方法
JP5390472B2 (ja) 2010-06-03 2014-01-15 株式会社東芝 半導体発光装置及びその製造方法
JP5337105B2 (ja) 2010-06-03 2013-11-06 株式会社東芝 半導体発光装置
US20110298001A1 (en) 2010-06-03 2011-12-08 Kabushiki Kaisha Toshiba Method for manufacturing light-emitting device and light-emitting device manufactured by the same
JP2011253975A (ja) 2010-06-03 2011-12-15 Toshiba Corp 発光装置およびその製造方法
TW201145614A (en) 2010-06-03 2011-12-16 Toshiba Kk Method for manufacturing light-emitting device and light-emitting device manufactured by the same
JP5337106B2 (ja) 2010-06-04 2013-11-06 株式会社東芝 半導体発光装置
JP5185338B2 (ja) * 2010-08-09 2013-04-17 株式会社東芝 発光装置

Also Published As

Publication number Publication date
US20140374789A1 (en) 2014-12-25
KR20130097815A (ko) 2013-09-03
EP2673813B1 (en) 2016-05-04
WO2012107967A1 (en) 2012-08-16
TWI429108B (zh) 2014-03-01
JP5603793B2 (ja) 2014-10-08
JP2012164911A (ja) 2012-08-30
CN103403895B (zh) 2017-03-29
EP2673813A1 (en) 2013-12-18
CN103403895A (zh) 2013-11-20
US8860075B2 (en) 2014-10-14
US9263640B2 (en) 2016-02-16
TW201234661A (en) 2012-08-16
US20130320383A1 (en) 2013-12-05

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