DE69429318D1 - Halteverfahren und Haltesystem für ein Substrat - Google Patents

Halteverfahren und Haltesystem für ein Substrat

Info

Publication number
DE69429318D1
DE69429318D1 DE69429318T DE69429318T DE69429318D1 DE 69429318 D1 DE69429318 D1 DE 69429318D1 DE 69429318 T DE69429318 T DE 69429318T DE 69429318 T DE69429318 T DE 69429318T DE 69429318 D1 DE69429318 D1 DE 69429318D1
Authority
DE
Germany
Prior art keywords
holding
substrate
holding system
holding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69429318T
Other languages
English (en)
Other versions
DE69429318T2 (de
Inventor
Naoyuki Tamura
Kazue Takahashi
Youichi Ito
Yoshifumi Ogawa
Hiroyuki Shichiba
Tsunehiko Tsubone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23018793A external-priority patent/JP3265743B2/ja
Priority claimed from JP4828694A external-priority patent/JP3186008B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69429318D1 publication Critical patent/DE69429318D1/de
Publication of DE69429318T2 publication Critical patent/DE69429318T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
DE69429318T 1993-09-16 1994-09-02 Halteverfahren und Haltesystem für ein Substrat Expired - Fee Related DE69429318T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23018793A JP3265743B2 (ja) 1993-09-16 1993-09-16 基板保持方法及び基板保持装置
JP4828694A JP3186008B2 (ja) 1994-03-18 1994-03-18 ウエハ保持装置

Publications (2)

Publication Number Publication Date
DE69429318D1 true DE69429318D1 (de) 2002-01-17
DE69429318T2 DE69429318T2 (de) 2002-08-08

Family

ID=26388524

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69429318T Expired - Fee Related DE69429318T2 (de) 1993-09-16 1994-09-02 Halteverfahren und Haltesystem für ein Substrat
DE69433903T Expired - Fee Related DE69433903T2 (de) 1993-09-16 1994-09-02 Halteverfahren und Haltesystem für ein Substrat

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69433903T Expired - Fee Related DE69433903T2 (de) 1993-09-16 1994-09-02 Halteverfahren und Haltesystem für ein Substrat

Country Status (5)

Country Link
US (8) US5792304A (de)
EP (3) EP1119023A3 (de)
KR (8) KR100290700B1 (de)
DE (2) DE69429318T2 (de)
TW (1) TW277139B (de)

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3249765B2 (ja) * 1997-05-07 2002-01-21 東京エレクトロン株式会社 基板処理装置
TW277139B (de) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US6544379B2 (en) 1993-09-16 2003-04-08 Hitachi, Ltd. Method of holding substrate and substrate holding system
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US6133557A (en) * 1995-01-31 2000-10-17 Kyocera Corporation Wafer holding member
US5679404A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Method for depositing a substance with temperature control
US6902683B1 (en) * 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
JPH09256153A (ja) * 1996-03-15 1997-09-30 Anelva Corp 基板処理装置
US5885353A (en) 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
KR100238202B1 (ko) * 1996-08-21 2000-01-15 윤종용 서셉터를 구비한 반도체소자 제조장치 및 서셉터 제조방법
US6258287B1 (en) * 1996-08-28 2001-07-10 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment
JPH10240356A (ja) 1997-02-21 1998-09-11 Anelva Corp 基板処理装置の基板温度制御法と基板温度制御性判定法
US6053983A (en) * 1997-05-08 2000-04-25 Tokyo Electron, Ltd. Wafer for carrying semiconductor wafers and method detecting wafers on carrier
US5989349A (en) * 1997-06-24 1999-11-23 Applied Materials, Inc. Diagnostic pedestal assembly for a semiconductor wafer processing system
US6576064B2 (en) * 1997-07-10 2003-06-10 Sandia Corporation Support apparatus for semiconductor wafer processing
TW524873B (en) 1997-07-11 2003-03-21 Applied Materials Inc Improved substrate supporting apparatus and processing chamber
US6177023B1 (en) * 1997-07-11 2001-01-23 Applied Komatsu Technology, Inc. Method and apparatus for electrostatically maintaining substrate flatness
WO1999048139A2 (en) * 1998-03-18 1999-09-23 Applied Materials, Inc. Apparatus for reducing heat loss
US6464843B1 (en) * 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
US6368665B1 (en) * 1998-04-29 2002-04-09 Microcoating Technologies, Inc. Apparatus and process for controlled atmosphere chemical vapor deposition
JP3333135B2 (ja) * 1998-06-25 2002-10-07 東京エレクトロン株式会社 熱処理装置及び熱処理方法
JP2000021869A (ja) * 1998-06-30 2000-01-21 Tokyo Electron Ltd 真空処理装置
JP2000021964A (ja) * 1998-07-06 2000-01-21 Ngk Insulators Ltd 静電チャックのパーティクル発生低減方法および半導体製造装置
US6107206A (en) * 1998-09-14 2000-08-22 Taiwan Semiconductor Manufacturing Company Method for etching shallow trenches in a semiconductor body
TW432580B (en) * 1998-09-29 2001-05-01 Applied Materials Inc Piezoelectric method and apparatus for semiconductor wafer detection
DE19853092B4 (de) * 1998-11-18 2004-10-21 Leica Microsystems Lithography Gmbh Übernahme- und Haltesystem für ein Substrat
US6238160B1 (en) * 1998-12-02 2001-05-29 Taiwan Semiconductor Manufacturing Company, Ltd' Method for transporting and electrostatically chucking a semiconductor wafer or the like
KR100541398B1 (ko) * 1998-12-29 2006-03-14 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 공정
JP3352418B2 (ja) * 1999-01-28 2002-12-03 キヤノン株式会社 減圧処理方法及び減圧処理装置
JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
JP3846092B2 (ja) * 1999-02-24 2006-11-15 松下電器産業株式会社 プラズマ処理装置および方法
US6305677B1 (en) * 1999-03-30 2001-10-23 Lam Research Corporation Perimeter wafer lifting
US6635577B1 (en) * 1999-03-30 2003-10-21 Applied Materials, Inc Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
US6462928B1 (en) 1999-05-07 2002-10-08 Applied Materials, Inc. Electrostatic chuck having improved electrical connector and method
US6490146B2 (en) 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
US6310755B1 (en) * 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US6524389B1 (en) * 1999-05-24 2003-02-25 Tokyo Electron Limited Substrate processing apparatus
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6803546B1 (en) 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6461980B1 (en) * 2000-01-28 2002-10-08 Applied Materials, Inc. Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber
JP3492325B2 (ja) 2000-03-06 2004-02-03 キヤノン株式会社 画像表示装置の製造方法
JP2001338878A (ja) * 2000-03-21 2001-12-07 Sharp Corp サセプタおよび表面処理方法
JP4334723B2 (ja) * 2000-03-21 2009-09-30 新明和工業株式会社 イオンプレーティング成膜装置、及びイオンプレーティング成膜方法。
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
JP4697833B2 (ja) * 2000-06-14 2011-06-08 キヤノンアネルバ株式会社 静電吸着機構及び表面処理装置
CN1279577C (zh) * 2000-07-06 2006-10-11 应用材料有限公司 对基体进行热处理的方法
JP3581303B2 (ja) * 2000-07-31 2004-10-27 東京エレクトロン株式会社 判別方法及び処理装置
KR100385876B1 (ko) * 2000-12-20 2003-06-02 한미반도체 주식회사 반도체 패키지장치 절단용 핸들러 시스템
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
JP4549022B2 (ja) 2001-04-30 2010-09-22 ラム リサーチ コーポレイション ワーク支持体の表面を横切る空間温度分布を制御する方法および装置
US20050211385A1 (en) * 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
JP4707271B2 (ja) * 2001-06-29 2011-06-22 三洋電機株式会社 エレクトロルミネッセンス素子の製造方法
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
DE10134513A1 (de) * 2001-07-16 2003-01-30 Unaxis Balzers Ag Hebe-und Stützvorichtung
US6538872B1 (en) 2001-11-05 2003-03-25 Applied Materials, Inc. Electrostatic chuck having heater and method
JP3948325B2 (ja) * 2002-04-02 2007-07-25 松下電器産業株式会社 フィルム基板処理方法
US20040253551A1 (en) * 2003-03-06 2004-12-16 Tsuyoshi Shibata Baking apparatus, substrate heat treatment method and semiconductor device manufacturing method for using baking apparatus, pattern forming method and semiconductor device manufacturing method for using pattern forming method
JP4219927B2 (ja) * 2003-03-19 2009-02-04 東京エレクトロン株式会社 基板保持機構およびその製造方法、基板処理装置
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
JP2005063991A (ja) * 2003-08-08 2005-03-10 Sumitomo Electric Ind Ltd 半導体製造装置
KR20060095951A (ko) * 2003-09-25 2006-09-05 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 기판의 제조 방법
JP3981091B2 (ja) * 2004-03-01 2007-09-26 株式会社東芝 成膜用リングおよび半導体装置の製造装置
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7595972B2 (en) * 2004-04-09 2009-09-29 Varian Semiconductor Equipment Associates, Inc. Clamp for use in processing semiconductor workpieces
KR20060037822A (ko) * 2004-10-28 2006-05-03 주식회사 하이닉스반도체 고밀도플라즈마 화학기상증착 장치 및 그를 이용한반도체소자의 제조 방법
US20060130764A1 (en) * 2004-12-16 2006-06-22 Jusung Engineering Co., Ltd. Susceptor for apparatus fabricating thin film
DE202005003014U1 (de) * 2005-02-24 2005-04-28 Dekema Dental-Keramiköfen GmbH Vorrichtung zur Herstellung von Muffeln für die Herstellung von Zahnersatzteilen
JP4336320B2 (ja) 2005-02-25 2009-09-30 キヤノンアネルバ株式会社 ウエハホルダ
US7789962B2 (en) * 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP2007324295A (ja) * 2006-05-31 2007-12-13 Dainippon Screen Mfg Co Ltd ウエハ薄化装置及びウエハ処理システム
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7560007B2 (en) * 2006-09-11 2009-07-14 Lam Research Corporation In-situ wafer temperature measurement and control
US20080066683A1 (en) * 2006-09-19 2008-03-20 General Electric Company Assembly with Enhanced Thermal Uniformity and Method For Making Thereof
US7589950B2 (en) * 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
US7972444B2 (en) * 2007-11-07 2011-07-05 Mattson Technology, Inc. Workpiece support with fluid zones for temperature control
JP5222442B2 (ja) * 2008-02-06 2013-06-26 東京エレクトロン株式会社 基板載置台、基板処理装置及び被処理基板の温度制御方法
US20110011341A1 (en) * 2008-03-24 2011-01-20 Tokyo Electron Limited Shower plate and plasma processing device using the same
TWI425591B (zh) * 2008-04-02 2014-02-01 Ap Systems Inc 基板組合裝置
JP5036614B2 (ja) * 2008-04-08 2012-09-26 東京応化工業株式会社 基板用ステージ
CN103346116B (zh) 2008-10-07 2016-01-13 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
US9186742B2 (en) * 2009-01-30 2015-11-17 General Electric Company Microwave brazing process and assemblies and materials therefor
SG183432A1 (en) * 2010-02-24 2012-09-27 Veeco Instr Inc Processing methods and apparatus with temperature distribution control
US9096930B2 (en) * 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US9478428B2 (en) * 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
US20120083129A1 (en) 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
US9123762B2 (en) * 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
JP5787526B2 (ja) * 2011-01-17 2015-09-30 イビデン株式会社 電子部品位置決め用治具
DE112011105215A5 (de) * 2011-05-06 2014-05-15 Osram Opto Semiconductors Gmbh Bauelementträgerverbund mit einer bauelementträgerbereiche abtrennenden Grabenstruktur und Verfahren zur Herstellung einer Mehrzahl von Bauelementträgerbereichen
US9866151B2 (en) * 2012-11-27 2018-01-09 Creative Technology Corporation Electrostatic chuck, glass substrate processing method, and said glass substrate
CH707480B1 (de) * 2013-01-21 2016-08-31 Besi Switzerland Ag Bondkopf mit einem heiz- und kühlbaren Saugorgan.
US9273413B2 (en) 2013-03-14 2016-03-01 Veeco Instruments Inc. Wafer carrier with temperature distribution control
JP6114708B2 (ja) * 2013-05-27 2017-04-12 東京エレクトロン株式会社 基板脱離検出装置及び基板脱離検出方法、並びにこれらを用いた基板処理装置及び基板処理方法
CN103376176B (zh) * 2013-06-21 2015-10-28 清华大学 测量静电卡盘的静电力的装置
JP5987966B2 (ja) * 2014-12-10 2016-09-07 Toto株式会社 静電チャックおよびウェーハ処理装置
US9929121B2 (en) 2015-08-31 2018-03-27 Kulicke And Soffa Industries, Inc. Bonding machines for bonding semiconductor elements, methods of operating bonding machines, and techniques for improving UPH on such bonding machines
KR101758347B1 (ko) * 2016-08-01 2017-07-18 주식회사 엘케이엔지니어링 정전 척 및 리페어 방법
ES2884373T3 (es) * 2017-06-28 2021-12-10 Meyer Burger Germany Gmbh Dispositivo para el transporte de un sustrato, dispositivo de tratamiento con una placa de alojamiento adaptada a un soporte de sustrato de tal dispositivo y procedimiento para el procesado de un sustrato bajo utilización de tal dispositivo para el transporte de un sustrato, así como planta de tratamiento
KR20190114372A (ko) * 2018-03-30 2019-10-10 (주)포인트엔지니어링 마이크로 led 전사 시스템
CN112011778B (zh) * 2020-08-26 2022-08-16 北京北方华创微电子装备有限公司 一种半导体工艺设备中的卡盘组件及半导体工艺设备
EP4134748A1 (de) * 2021-08-12 2023-02-15 ASML Netherlands B.V. Elektrostatischer halter, objekttisch und lithografische vorrichtung
KR20240047376A (ko) * 2021-08-12 2024-04-12 에이에스엠엘 네델란즈 비.브이. 정전 홀더, 대상물 테이블 및 리소그래피 장치
KR102514491B1 (ko) * 2022-12-21 2023-03-27 주식회사 디스닉스 싱글타입 고온용 서셉터

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR452222A (fr) * 1912-12-20 1913-05-10 Pierre Emmanuel Emile Raverot Perfectionnement de la transmission téléphonique de la parole
JPS5832410A (ja) * 1981-08-06 1983-02-25 ザ・パ−キン−エルマ−・コ−ポレイシヨン ガス状減圧環境下で構造物を処理する方法及び装置
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
JPS59124140A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 静電吸着装置
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
JPS6131636U (ja) * 1984-07-31 1986-02-26 株式会社 徳田製作所 静電チヤツク
JPH0727959B2 (ja) * 1986-02-20 1995-03-29 富士通株式会社 ウエハ−保持機構
US4671204A (en) * 1986-05-16 1987-06-09 Varian Associates, Inc. Low compliance seal for gas-enhanced wafer cooling in vacuum
JPH0646627B2 (ja) * 1986-10-20 1994-06-15 東京エレクトロン株式会社 処理装置
JP2678381B2 (ja) * 1987-05-06 1997-11-17 ユニサーチ・リミテッド 交流電界励振を利用した静電チャック
US4911812A (en) * 1987-10-21 1990-03-27 Hitachi, Ltd. Plasma treating method and apparatus therefor
JPH0227778A (ja) * 1988-07-15 1990-01-30 Idemitsu Petrochem Co Ltd 熱電素子の製造方法
JPH01251375A (ja) * 1988-03-30 1989-10-06 Shikoku Nippon Denki Software Kk 磁気ディスク制御装置
US4949783A (en) * 1988-05-18 1990-08-21 Veeco Instruments, Inc. Substrate transport and cooling apparatus and method for same
JPH0730468B2 (ja) * 1988-06-09 1995-04-05 日電アネルバ株式会社 ドライエッチング装置
JPH02135140A (ja) * 1988-07-19 1990-05-24 Ube Ind Ltd 消臭剤およびその製造方法
JP2748127B2 (ja) * 1988-09-02 1998-05-06 キヤノン株式会社 ウエハ保持方法
JPH02135753A (ja) * 1988-11-16 1990-05-24 Sumitomo Metal Ind Ltd 試料保持装置
US5088444A (en) * 1989-03-15 1992-02-18 Kabushiki Kaisha Toshiba Vapor deposition system
JPH06101446B2 (ja) * 1989-05-26 1994-12-12 三菱電機株式会社 プラズマ処理方法およびプラズマ処理装置
JP2682190B2 (ja) * 1989-09-01 1997-11-26 富士電機株式会社 乾式成膜装置
JPH03154334A (ja) * 1989-11-13 1991-07-02 Hitachi Ltd 低温処理方法および装置
JP3129452B2 (ja) * 1990-03-13 2001-01-29 富士電機株式会社 静電チャック
FR2661039B1 (fr) * 1990-04-12 1997-04-30 Commissariat Energie Atomique Porte-substrat electrostatique.
JPH046270A (ja) * 1990-04-25 1992-01-10 Fujitsu Ltd スパッタリング装置
JPH048439A (ja) * 1990-04-26 1992-01-13 Isuzu Motors Ltd 工作機械
JPH0461325A (ja) * 1990-06-29 1992-02-27 Tokyo Electron Ltd 処理装置
KR0165898B1 (ko) * 1990-07-02 1999-02-01 미다 가쓰시게 진공처리방법 및 장치
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
JPH0478133A (ja) * 1990-07-20 1992-03-12 Tokyo Electron Ltd プラズマ処理装置
JP3020580B2 (ja) * 1990-09-28 2000-03-15 株式会社日立製作所 マイクロ波プラズマ処理装置
JPH04196528A (ja) * 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
FR2673918B1 (fr) * 1991-03-14 1993-05-28 Houzay Francoise Conteneur autonome pour le traitement sous vide d'un objet, et son sas de transfert.
JP3375646B2 (ja) * 1991-05-31 2003-02-10 株式会社日立製作所 プラズマ処理装置
JPH056933A (ja) * 1991-06-27 1993-01-14 Kyocera Corp セラミツク製静電チヤツク
JPH0547906A (ja) * 1991-08-08 1993-02-26 Hitachi Ltd 板状物保持手段およびそれを用いた装置
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
JP2758755B2 (ja) * 1991-12-11 1998-05-28 松下電器産業株式会社 ドライエッチング装置及び方法
JPH05166757A (ja) * 1991-12-13 1993-07-02 Tokyo Electron Ltd 被処理体の温調装置
US5698070A (en) * 1991-12-13 1997-12-16 Tokyo Electron Limited Method of etching film formed on semiconductor wafer
US5213349A (en) * 1991-12-18 1993-05-25 Elliott Joe C Electrostatic chuck
JPH05175318A (ja) * 1991-12-20 1993-07-13 Fujitsu Ltd 静電チャックの基板脱着方法
US5310453A (en) * 1992-02-13 1994-05-10 Tokyo Electron Yamanashi Limited Plasma process method using an electrostatic chuck
JPH05226292A (ja) * 1992-02-13 1993-09-03 Tokyo Electron Yamanashi Kk プラズマ処理開始方法
JPH05234944A (ja) * 1992-02-19 1993-09-10 Hitachi Ltd ウエハ温度制御方法及び装置
US5376213A (en) * 1992-07-28 1994-12-27 Tokyo Electron Limited Plasma processing apparatus
KR100238629B1 (ko) * 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
US5366002A (en) * 1993-05-05 1994-11-22 Applied Materials, Inc. Apparatus and method to ensure heat transfer to and from an entire substrate during semiconductor processing
US5511799A (en) * 1993-06-07 1996-04-30 Applied Materials, Inc. Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
EP0635870A1 (de) * 1993-07-20 1995-01-25 Applied Materials, Inc. Eine elektrostatische Halteplatte mit einer gerillten Fläche
TW277139B (de) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US6544379B2 (en) * 1993-09-16 2003-04-08 Hitachi, Ltd. Method of holding substrate and substrate holding system
US5576483A (en) * 1993-10-01 1996-11-19 Hysitron Incorporated Capacitive transducer with electrostatic actuation
TW273067B (de) * 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
US5531835A (en) * 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5474614A (en) * 1994-06-10 1995-12-12 Texas Instruments Incorporated Method and apparatus for releasing a semiconductor wafer from an electrostatic clamp
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5656093A (en) * 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
US5748435A (en) * 1996-12-30 1998-05-05 Applied Materials, Inc. Apparatus for controlling backside gas pressure beneath a semiconductor wafer

Also Published As

Publication number Publication date
US6048434A (en) 2000-04-11
KR100362995B1 (ko) 2002-11-29
EP0921559B1 (de) 2004-07-14
EP1119023A2 (de) 2001-07-25
KR100287552B1 (ko) 2001-04-16
US6336991B1 (en) 2002-01-08
DE69433903D1 (de) 2004-08-19
EP1119023A3 (de) 2006-06-07
EP0644578A3 (de) 1995-04-19
KR100345207B1 (ko) 2002-07-24
DE69429318T2 (de) 2002-08-08
KR100406716B1 (ko) 2003-11-20
US5961774A (en) 1999-10-05
KR100406692B1 (ko) 2003-11-21
KR100454863B1 (ko) 2004-11-03
TW277139B (de) 1996-06-01
US5906684A (en) 1999-05-25
US5985035A (en) 1999-11-16
EP0921559A2 (de) 1999-06-09
US5792304A (en) 1998-08-11
EP0644578B1 (de) 2001-12-05
US6217705B1 (en) 2001-04-17
KR100290700B1 (ko) 2001-10-24
EP0921559A3 (de) 1999-08-04
KR950010014A (ko) 1995-04-26
US6221201B1 (en) 2001-04-24
DE69433903T2 (de) 2005-07-28
KR100325679B1 (ko) 2002-02-25
EP0644578A2 (de) 1995-03-22

Similar Documents

Publication Publication Date Title
DE69429318D1 (de) Halteverfahren und Haltesystem für ein Substrat
DE69531019D1 (de) Behandlungsmethode und -vorrichtung für ein resistbeschichtetes Substrat
DE69317805D1 (de) Substrat für eine Halbleitervorrichtung und Verfahren zur Vorbereitung desselben
DE69312099D1 (de) Substrat für ein Flüssigkristallelement und entsprechende Herstellungsmethode
DE69434049D1 (de) Keramisches Substrat und Verfahren zu dessen Herstellung
DE19782131T1 (de) Halteeinrichtungen und Verfahren zum Positionieren mehrerer Gegenstände auf einem Substrat
DK93895A (da) Belagt substrat og fremgangsmåde til fremstilling af samme
DE69700417D1 (de) Glaszusammensetzung für ein Substrat
DE69419749T2 (de) Speicherverwalter für ein rechnersystem und verfahren hierfür
DE69427202D1 (de) Flüssigkristall Anzeigevorrichtung, Verfahren zu ihrer Herstellung, und ein Substrat
DE69410698T2 (de) Haltevorrichtung für ein geteiltes Kettenrad
NO972676L (no) Framgangsmåte og anordning for lakkering eller belegging av et substrat
DE69635682D1 (de) Trocknungssystem für ein beschichtetes Substrat
DE69422949D1 (de) Aufzeichnungsgerät, Substrat für Aufzeichnungskopf und Herstellungsverfahren dafür
DE69502483D1 (de) Basisschicht für ein beschichtungsystem
DK0906412T3 (da) Et farvestofoptagende substrat og en fremgangsmåde til fremstilling deraf
DE69107171T2 (de) Trocknungsverfahren und -vorrichtung für ein beschichtetes Substrat.
DE69711134T2 (de) Übertragungssystem und Übertragungsverfahren für ein Übertragungssystem
DE69107170D1 (de) Trocknungsverfahren und -vorrichtungen für ein beschichtetes Substrat.
DE69507445T2 (de) Reinigungsverfahren für ein Halbleitersubstrat
DE19781950T1 (de) Gerät und Verfahren für ein Telekommunikationssystem
DE69123279D1 (de) Transportvorrichtung für Substrate und Verfahren zur Kontrolle
DE69425459D1 (de) Substrat auf Keramikbasis und Verfahren zu dessen Herstellung
DE69737339D1 (de) Verbinder für ein Substrat
DE69706987T2 (de) Speichersystem und speicherverfahren für ein verteiltes speichersystem

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee