DE69433903D1 - Halteverfahren und Haltesystem für ein Substrat - Google Patents
Halteverfahren und Haltesystem für ein SubstratInfo
- Publication number
- DE69433903D1 DE69433903D1 DE69433903T DE69433903T DE69433903D1 DE 69433903 D1 DE69433903 D1 DE 69433903D1 DE 69433903 T DE69433903 T DE 69433903T DE 69433903 T DE69433903 T DE 69433903T DE 69433903 D1 DE69433903 D1 DE 69433903D1
- Authority
- DE
- Germany
- Prior art keywords
- holding
- substrate
- holding system
- holding method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23018793 | 1993-09-16 | ||
JP23018793A JP3265743B2 (ja) | 1993-09-16 | 1993-09-16 | 基板保持方法及び基板保持装置 |
JP4828694 | 1994-03-18 | ||
JP4828694A JP3186008B2 (ja) | 1994-03-18 | 1994-03-18 | ウエハ保持装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69433903D1 true DE69433903D1 (de) | 2004-08-19 |
DE69433903T2 DE69433903T2 (de) | 2005-07-28 |
Family
ID=26388524
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69429318T Expired - Fee Related DE69429318T2 (de) | 1993-09-16 | 1994-09-02 | Halteverfahren und Haltesystem für ein Substrat |
DE69433903T Expired - Fee Related DE69433903T2 (de) | 1993-09-16 | 1994-09-02 | Halteverfahren und Haltesystem für ein Substrat |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69429318T Expired - Fee Related DE69429318T2 (de) | 1993-09-16 | 1994-09-02 | Halteverfahren und Haltesystem für ein Substrat |
Country Status (5)
Country | Link |
---|---|
US (8) | US5792304A (de) |
EP (3) | EP1119023A3 (de) |
KR (8) | KR100290700B1 (de) |
DE (2) | DE69429318T2 (de) |
TW (1) | TW277139B (de) |
Families Citing this family (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3249765B2 (ja) * | 1997-05-07 | 2002-01-21 | 東京エレクトロン株式会社 | 基板処理装置 |
US6544379B2 (en) * | 1993-09-16 | 2003-04-08 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
TW277139B (de) * | 1993-09-16 | 1996-06-01 | Hitachi Seisakusyo Kk | |
US5822171A (en) * | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
US6133557A (en) * | 1995-01-31 | 2000-10-17 | Kyocera Corporation | Wafer holding member |
US5679404A (en) * | 1995-06-07 | 1997-10-21 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method for depositing a substance with temperature control |
US6902683B1 (en) * | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
JPH09256153A (ja) * | 1996-03-15 | 1997-09-30 | Anelva Corp | 基板処理装置 |
US5885353A (en) * | 1996-06-21 | 1999-03-23 | Micron Technology, Inc. | Thermal conditioning apparatus |
KR100238202B1 (ko) * | 1996-08-21 | 2000-01-15 | 윤종용 | 서셉터를 구비한 반도체소자 제조장치 및 서셉터 제조방법 |
US6258287B1 (en) * | 1996-08-28 | 2001-07-10 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment |
JPH10240356A (ja) | 1997-02-21 | 1998-09-11 | Anelva Corp | 基板処理装置の基板温度制御法と基板温度制御性判定法 |
US6053983A (en) * | 1997-05-08 | 2000-04-25 | Tokyo Electron, Ltd. | Wafer for carrying semiconductor wafers and method detecting wafers on carrier |
US5989349A (en) * | 1997-06-24 | 1999-11-23 | Applied Materials, Inc. | Diagnostic pedestal assembly for a semiconductor wafer processing system |
US6576064B2 (en) * | 1997-07-10 | 2003-06-10 | Sandia Corporation | Support apparatus for semiconductor wafer processing |
TW524873B (en) | 1997-07-11 | 2003-03-21 | Applied Materials Inc | Improved substrate supporting apparatus and processing chamber |
US6177023B1 (en) * | 1997-07-11 | 2001-01-23 | Applied Komatsu Technology, Inc. | Method and apparatus for electrostatically maintaining substrate flatness |
WO1999048139A2 (en) * | 1998-03-18 | 1999-09-23 | Applied Materials, Inc. | Apparatus for reducing heat loss |
US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
US6368665B1 (en) * | 1998-04-29 | 2002-04-09 | Microcoating Technologies, Inc. | Apparatus and process for controlled atmosphere chemical vapor deposition |
JP3333135B2 (ja) * | 1998-06-25 | 2002-10-07 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
JP2000021869A (ja) * | 1998-06-30 | 2000-01-21 | Tokyo Electron Ltd | 真空処理装置 |
JP2000021964A (ja) | 1998-07-06 | 2000-01-21 | Ngk Insulators Ltd | 静電チャックのパーティクル発生低減方法および半導体製造装置 |
US6107206A (en) * | 1998-09-14 | 2000-08-22 | Taiwan Semiconductor Manufacturing Company | Method for etching shallow trenches in a semiconductor body |
TW432580B (en) * | 1998-09-29 | 2001-05-01 | Applied Materials Inc | Piezoelectric method and apparatus for semiconductor wafer detection |
DE19853092B4 (de) * | 1998-11-18 | 2004-10-21 | Leica Microsystems Lithography Gmbh | Übernahme- und Haltesystem für ein Substrat |
US6238160B1 (en) * | 1998-12-02 | 2001-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd' | Method for transporting and electrostatically chucking a semiconductor wafer or the like |
KR100541398B1 (ko) * | 1998-12-29 | 2006-03-14 | 삼성전자주식회사 | 고밀도 플라즈마 화학 기상 증착 공정 |
JP3352418B2 (ja) * | 1999-01-28 | 2002-12-03 | キヤノン株式会社 | 減圧処理方法及び減圧処理装置 |
JP2001209981A (ja) * | 1999-02-09 | 2001-08-03 | Ricoh Co Ltd | 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク |
JP3846092B2 (ja) * | 1999-02-24 | 2006-11-15 | 松下電器産業株式会社 | プラズマ処理装置および方法 |
US6305677B1 (en) * | 1999-03-30 | 2001-10-23 | Lam Research Corporation | Perimeter wafer lifting |
US6635577B1 (en) * | 1999-03-30 | 2003-10-21 | Applied Materials, Inc | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
JP4236329B2 (ja) * | 1999-04-15 | 2009-03-11 | 日本碍子株式会社 | プラズマ処理装置 |
US6462928B1 (en) | 1999-05-07 | 2002-10-08 | Applied Materials, Inc. | Electrostatic chuck having improved electrical connector and method |
US6310755B1 (en) * | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
US6490146B2 (en) | 1999-05-07 | 2002-12-03 | Applied Materials Inc. | Electrostatic chuck bonded to base with a bond layer and method |
US6464795B1 (en) | 1999-05-21 | 2002-10-15 | Applied Materials, Inc. | Substrate support member for a processing chamber |
US6524389B1 (en) * | 1999-05-24 | 2003-02-25 | Tokyo Electron Limited | Substrate processing apparatus |
JP2001068538A (ja) * | 1999-06-21 | 2001-03-16 | Tokyo Electron Ltd | 電極構造、載置台構造、プラズマ処理装置及び処理装置 |
US6803546B1 (en) | 1999-07-08 | 2004-10-12 | Applied Materials, Inc. | Thermally processing a substrate |
US6673198B1 (en) * | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
US6363882B1 (en) * | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
US6461980B1 (en) * | 2000-01-28 | 2002-10-08 | Applied Materials, Inc. | Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber |
JP3492325B2 (ja) | 2000-03-06 | 2004-02-03 | キヤノン株式会社 | 画像表示装置の製造方法 |
JP4334723B2 (ja) * | 2000-03-21 | 2009-09-30 | 新明和工業株式会社 | イオンプレーティング成膜装置、及びイオンプレーティング成膜方法。 |
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JP4592916B2 (ja) * | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | 被処理体の載置装置 |
JP4697833B2 (ja) * | 2000-06-14 | 2011-06-08 | キヤノンアネルバ株式会社 | 静電吸着機構及び表面処理装置 |
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JP3581303B2 (ja) * | 2000-07-31 | 2004-10-27 | 東京エレクトロン株式会社 | 判別方法及び処理装置 |
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KR20190114372A (ko) * | 2018-03-30 | 2019-10-10 | (주)포인트엔지니어링 | 마이크로 led 전사 시스템 |
TWI845682B (zh) * | 2019-05-22 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 工件基座主體 |
CN112011778B (zh) * | 2020-08-26 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 一种半导体工艺设备中的卡盘组件及半导体工艺设备 |
JP2024529140A (ja) * | 2021-08-12 | 2024-08-01 | エーエスエムエル ネザーランズ ビー.ブイ. | 静電ホルダ、物体テーブル、およびリソグラフィ装置 |
EP4134748A1 (de) * | 2021-08-12 | 2023-02-15 | ASML Netherlands B.V. | Elektrostatischer halter, objekttisch und lithografische vorrichtung |
KR102514491B1 (ko) * | 2022-12-21 | 2023-03-27 | 주식회사 디스닉스 | 싱글타입 고온용 서셉터 |
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-
1994
- 1994-09-01 TW TW083108049A patent/TW277139B/zh not_active IP Right Cessation
- 1994-09-02 DE DE69429318T patent/DE69429318T2/de not_active Expired - Fee Related
- 1994-09-02 DE DE69433903T patent/DE69433903T2/de not_active Expired - Fee Related
- 1994-09-02 EP EP01107801A patent/EP1119023A3/de not_active Withdrawn
- 1994-09-02 EP EP94113803A patent/EP0644578B1/de not_active Expired - Lifetime
- 1994-09-02 EP EP99101718A patent/EP0921559B1/de not_active Expired - Lifetime
- 1994-09-16 KR KR1019940023529A patent/KR100290700B1/ko not_active IP Right Cessation
- 1994-09-16 US US08/307,238 patent/US5792304A/en not_active Expired - Lifetime
-
1996
- 1996-06-20 US US08/670,180 patent/US6048434A/en not_active Expired - Lifetime
-
1997
- 1997-08-01 US US08/904,623 patent/US5961774A/en not_active Expired - Lifetime
-
1998
- 1998-03-31 US US09/050,417 patent/US5906684A/en not_active Expired - Lifetime
- 1998-07-02 US US09/108,835 patent/US6221201B1/en not_active Expired - Lifetime
- 1998-07-02 US US09/109,033 patent/US5985035A/en not_active Expired - Lifetime
- 1998-07-02 US US09/109,178 patent/US6336991B1/en not_active Expired - Lifetime
-
2000
- 2000-01-07 US US09/478,992 patent/US6217705B1/en not_active Expired - Lifetime
- 2000-10-06 KR KR1020000058880A patent/KR100287552B1/ko not_active IP Right Cessation
- 2000-10-06 KR KR1020000058863A patent/KR100325679B1/ko not_active IP Right Cessation
- 2000-10-06 KR KR1020000058873A patent/KR100362995B1/ko not_active IP Right Cessation
- 2000-10-06 KR KR1020000058882A patent/KR100406692B1/ko not_active IP Right Cessation
-
2001
- 2001-05-16 KR KR1020010026680A patent/KR100406716B1/ko not_active IP Right Cessation
-
2002
- 2002-03-14 KR KR1020020013791A patent/KR100345207B1/ko not_active IP Right Cessation
-
2003
- 2003-04-03 KR KR1020030021112A patent/KR100454863B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100454863B1 (ko) | 2004-11-03 |
US6221201B1 (en) | 2001-04-24 |
US5906684A (en) | 1999-05-25 |
KR950010014A (ko) | 1995-04-26 |
US6217705B1 (en) | 2001-04-17 |
EP0644578A2 (de) | 1995-03-22 |
US6336991B1 (en) | 2002-01-08 |
KR100345207B1 (ko) | 2002-07-24 |
KR100325679B1 (ko) | 2002-02-25 |
US6048434A (en) | 2000-04-11 |
EP0921559A2 (de) | 1999-06-09 |
KR100406716B1 (ko) | 2003-11-20 |
EP0644578B1 (de) | 2001-12-05 |
EP1119023A3 (de) | 2006-06-07 |
US5985035A (en) | 1999-11-16 |
EP1119023A2 (de) | 2001-07-25 |
DE69429318T2 (de) | 2002-08-08 |
KR100362995B1 (ko) | 2002-11-29 |
DE69429318D1 (de) | 2002-01-17 |
DE69433903T2 (de) | 2005-07-28 |
KR100287552B1 (ko) | 2001-04-16 |
EP0921559B1 (de) | 2004-07-14 |
US5792304A (en) | 1998-08-11 |
EP0644578A3 (de) | 1995-04-19 |
EP0921559A3 (de) | 1999-08-04 |
TW277139B (de) | 1996-06-01 |
KR100290700B1 (ko) | 2001-10-24 |
US5961774A (en) | 1999-10-05 |
KR100406692B1 (ko) | 2003-11-21 |
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