PL3422396T3 - Urządzenie do transportu substratu, urządzenie do obróbki z płytą mieszczącą dostosowaną do nośnika substratu takiego urządzenia oraz sposób przetwarzania substratu za pomocą takiego urządzenia do transportu substratu oraz układ do obróbki - Google Patents
Urządzenie do transportu substratu, urządzenie do obróbki z płytą mieszczącą dostosowaną do nośnika substratu takiego urządzenia oraz sposób przetwarzania substratu za pomocą takiego urządzenia do transportu substratu oraz układ do obróbkiInfo
- Publication number
- PL3422396T3 PL3422396T3 PL17178276T PL17178276T PL3422396T3 PL 3422396 T3 PL3422396 T3 PL 3422396T3 PL 17178276 T PL17178276 T PL 17178276T PL 17178276 T PL17178276 T PL 17178276T PL 3422396 T3 PL3422396 T3 PL 3422396T3
- Authority
- PL
- Poland
- Prior art keywords
- substrate
- equipment
- transport
- processing
- mounting plate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Warehouses Or Storage Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP17178276.6A EP3422396B1 (de) | 2017-06-28 | 2017-06-28 | Vorrichtung zum transport eines substrats, behandlungsvorrichtung mit einer an einen substratträger einer solchen vorrichtung angepassten aufnahmeplatte und verfahren zum prozessieren eines substrates unter nutzung einer solchen vorrichtung zum transport eines substrats sowie behandlungsanlage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3422396T3 true PL3422396T3 (pl) | 2021-12-13 |
Family
ID=59269799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL17178276T PL3422396T3 (pl) | 2017-06-28 | 2017-06-28 | Urządzenie do transportu substratu, urządzenie do obróbki z płytą mieszczącą dostosowaną do nośnika substratu takiego urządzenia oraz sposób przetwarzania substratu za pomocą takiego urządzenia do transportu substratu oraz układ do obróbki |
Country Status (14)
| Country | Link |
|---|---|
| US (2) | US12009186B2 (pl) |
| EP (1) | EP3422396B1 (pl) |
| JP (1) | JP7062019B2 (pl) |
| KR (1) | KR102355962B1 (pl) |
| CN (1) | CN111010885B (pl) |
| EA (1) | EA202000012A1 (pl) |
| ES (1) | ES2884373T3 (pl) |
| HU (1) | HUE055522T2 (pl) |
| LT (1) | LT3422396T (pl) |
| MY (1) | MY203134A (pl) |
| PL (1) | PL3422396T3 (pl) |
| PT (1) | PT3422396T (pl) |
| SG (1) | SG11201911850SA (pl) |
| WO (1) | WO2019002014A1 (pl) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3806138B1 (en) * | 2019-10-09 | 2022-11-30 | Infineon Technologies AG | Transport system |
| JP7005690B2 (ja) * | 2020-06-17 | 2022-02-10 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、およびプログラム |
| TWI798760B (zh) * | 2020-08-26 | 2023-04-11 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法、基板保持具及程式 |
| DE102020124022A1 (de) | 2020-09-15 | 2022-03-17 | centrotherm international AG | Werkstückträger, System und Betriebsverfahren für PECVD |
| DE102020124030B4 (de) * | 2020-09-15 | 2022-06-15 | centrotherm international AG | Vorrichtung, System und Verfahren zur plasmaunterstützten chemischen Gasphasenabscheidung |
| CN114763607A (zh) * | 2021-01-14 | 2022-07-19 | 营口金辰机械股份有限公司 | 承托装置和等离子体增强化学气相沉积设备 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3214256A1 (de) | 1982-04-17 | 1983-10-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Vorrichtung zur handhabung eines substrates |
| IT8234031U1 (it) | 1982-07-20 | 1984-01-20 | Fotomec San Marco Spa | Dispositivi di aggancio di carta in striscie per macchine sviluppatrici |
| EP0189279B1 (en) | 1985-01-22 | 1991-10-09 | Applied Materials, Inc. | Semiconductor processing system |
| US5053183A (en) | 1989-09-21 | 1991-10-01 | Aluminum Company Of America | Method of handling green ceramic cards |
| TW277139B (pl) * | 1993-09-16 | 1996-06-01 | Hitachi Seisakusyo Kk | |
| JP3151118B2 (ja) * | 1995-03-01 | 2001-04-03 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP3586031B2 (ja) * | 1996-03-27 | 2004-11-10 | 株式会社東芝 | サセプタおよび熱処理装置および熱処理方法 |
| US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
| JPH11163102A (ja) * | 1997-11-27 | 1999-06-18 | Kokusai Electric Co Ltd | 半導体製造装置用サセプタ |
| JPH11176822A (ja) | 1997-12-05 | 1999-07-02 | Hitachi Ltd | 半導体処理装置 |
| JP4040162B2 (ja) * | 1998-04-07 | 2008-01-30 | 沖電気工業株式会社 | 半導体ウエハの洗浄装置 |
| JP3806272B2 (ja) * | 1999-09-13 | 2006-08-09 | 三菱重工業株式会社 | マルチチャンバ型真空処理システム及び基板搬送装置 |
| JP2001332609A (ja) * | 2000-03-13 | 2001-11-30 | Nikon Corp | 基板保持装置及び露光装置 |
| DE10047983A1 (de) | 2000-09-28 | 2001-11-15 | Wacker Siltronic Halbleitermat | Randgreifer für Halbleiterscheibe |
| US20030170583A1 (en) * | 2002-03-01 | 2003-09-11 | Hitachi Kokusai Electric Inc. | Heat treatment apparatus and a method for fabricating substrates |
| DE10232731A1 (de) * | 2002-07-19 | 2004-02-05 | Aixtron Ag | Be- und Entladevorrichtung für eine Beschichtungseinrichtung |
| US6799940B2 (en) * | 2002-12-05 | 2004-10-05 | Tokyo Electron Limited | Removable semiconductor wafer susceptor |
| JP2005223142A (ja) * | 2004-02-05 | 2005-08-18 | Tokyo Electron Ltd | 基板保持具、成膜処理装置及び処理装置 |
| KR100852975B1 (ko) * | 2004-08-06 | 2008-08-19 | 가부시키가이샤 히다치 고쿠사이 덴키 | 열처리 장치 및 기판의 제조 방법 |
| JP4355314B2 (ja) * | 2005-12-14 | 2009-10-28 | 東京エレクトロン株式会社 | 基板処理装置、及び該装置の蓋釣支装置 |
| JP2008108991A (ja) | 2006-10-27 | 2008-05-08 | Daihen Corp | ワーク保持機構 |
| JP2008244318A (ja) * | 2007-03-28 | 2008-10-09 | Tokyo Electron Ltd | 基板搬送部材の洗浄方法、基板搬送装置及び基板処理システム |
| DE102008019023B4 (de) | 2007-10-22 | 2009-09-24 | Centrotherm Photovoltaics Ag | Vakuum-Durchlaufanlage zur Prozessierung von Substraten |
| JP5330721B2 (ja) | 2007-10-23 | 2013-10-30 | オルボテック エルティ ソラー,エルエルシー | 処理装置および処理方法 |
| JP4857239B2 (ja) * | 2007-10-25 | 2012-01-18 | 株式会社トプコン | ウェハ保持装置 |
| JP5058848B2 (ja) | 2008-03-05 | 2012-10-24 | 東京エレクトロン株式会社 | 搬送アーム洗浄装置、搬送アーム洗浄方法、プログラム及びコンピュータ記憶媒体 |
| US8216379B2 (en) * | 2009-04-23 | 2012-07-10 | Applied Materials, Inc. | Non-circular substrate holders |
| JP5524668B2 (ja) * | 2010-03-26 | 2014-06-18 | ラピスセミコンダクタ株式会社 | ウエハ保持装置及び方法 |
| DE102010026209A1 (de) | 2010-07-06 | 2012-01-12 | Baumann Gmbh | Greifer für plattenartige Gegenstände, insbesondere für Halbleiter-Wafer |
| JP2012195562A (ja) * | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法 |
| JP5878813B2 (ja) * | 2011-06-21 | 2016-03-08 | 東京エレクトロン株式会社 | バッチ式処理装置 |
| CN103065997B (zh) * | 2011-10-19 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | 晶圆承载设备及晶圆承载的方法 |
| JP5929227B2 (ja) * | 2012-01-23 | 2016-06-01 | 大日本印刷株式会社 | 基板保持用枠体と基板保持用枠体の搬送方法 |
| WO2013115957A1 (en) | 2012-01-31 | 2013-08-08 | Applied Materials, Inc. | Stacked substrate processing chambers |
| JP5913162B2 (ja) * | 2012-04-04 | 2016-04-27 | 東京エレクトロン株式会社 | 基板保持装置および基板保持方法 |
| US9385017B2 (en) * | 2012-08-06 | 2016-07-05 | Nordson Corporation | Apparatus and methods for handling workpieces of different sizes |
| CN203434134U (zh) * | 2013-05-24 | 2014-02-12 | 北京京东方光电科技有限公司 | 一种基板传送装置 |
| TWI650832B (zh) | 2013-12-26 | 2019-02-11 | 維克儀器公司 | 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具 |
| EP2915901B1 (de) * | 2014-03-07 | 2019-02-27 | Meyer Burger (Germany) AG | Vorrichtung zur Plasmaprozessierung mit Prozessgaszirkulation in multiplen Plasmen |
| KR102123335B1 (ko) | 2015-01-12 | 2020-06-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세싱 챔버에서 층 증착 동안에 기판 캐리어 및 마스크 캐리어를 지지하기 위한 홀딩 어레인지먼트, 기판 상에 층을 증착하기 위한 장치, 및 기판을 지지하는 기판 캐리어와 마스크 캐리어를 정렬시키기 위한 방법 |
| US10438795B2 (en) * | 2015-06-22 | 2019-10-08 | Veeco Instruments, Inc. | Self-centering wafer carrier system for chemical vapor deposition |
| JP6015836B2 (ja) * | 2015-10-05 | 2016-10-26 | 大日本印刷株式会社 | 基板の基板保持用枠体への受け渡し方法と移載用架台への受け取り方法、および移載用架台 |
| KR101715009B1 (ko) * | 2016-08-23 | 2017-03-10 | (주)브이앤아이솔루션 | 기판처리장치의 캐리어 |
-
2017
- 2017-06-28 EP EP17178276.6A patent/EP3422396B1/de active Active
- 2017-06-28 ES ES17178276T patent/ES2884373T3/es active Active
- 2017-06-28 HU HUE17178276A patent/HUE055522T2/hu unknown
- 2017-06-28 PL PL17178276T patent/PL3422396T3/pl unknown
- 2017-06-28 PT PT171782766T patent/PT3422396T/pt unknown
- 2017-06-28 LT LTEP17178276.6T patent/LT3422396T/lt unknown
-
2018
- 2018-06-19 MY MYPI2019007281A patent/MY203134A/en unknown
- 2018-06-19 EA EA202000012A patent/EA202000012A1/ru unknown
- 2018-06-19 US US16/625,459 patent/US12009186B2/en active Active
- 2018-06-19 WO PCT/EP2018/066192 patent/WO2019002014A1/de not_active Ceased
- 2018-06-19 KR KR1020207002098A patent/KR102355962B1/ko active Active
- 2018-06-19 JP JP2019572637A patent/JP7062019B2/ja active Active
- 2018-06-19 CN CN201880048763.XA patent/CN111010885B/zh active Active
- 2018-06-19 SG SG11201911850SA patent/SG11201911850SA/en unknown
-
2024
- 2024-05-06 US US18/656,590 patent/US20240290584A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR102355962B1 (ko) | 2022-01-25 |
| MY203134A (en) | 2024-06-10 |
| KR20200018688A (ko) | 2020-02-19 |
| JP7062019B2 (ja) | 2022-05-02 |
| JP2020526040A (ja) | 2020-08-27 |
| EA202000012A1 (ru) | 2020-07-31 |
| ES2884373T3 (es) | 2021-12-10 |
| SG11201911850SA (en) | 2020-01-30 |
| US20210151302A1 (en) | 2021-05-20 |
| US20240290584A1 (en) | 2024-08-29 |
| WO2019002014A1 (de) | 2019-01-03 |
| EP3422396B1 (de) | 2021-08-04 |
| US12009186B2 (en) | 2024-06-11 |
| CN111010885B (zh) | 2023-04-14 |
| HUE055522T2 (hu) | 2021-11-29 |
| EP3422396A1 (de) | 2019-01-02 |
| PT3422396T (pt) | 2021-09-02 |
| CN111010885A (zh) | 2020-04-14 |
| LT3422396T (lt) | 2021-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| PL3422396T3 (pl) | Urządzenie do transportu substratu, urządzenie do obróbki z płytą mieszczącą dostosowaną do nośnika substratu takiego urządzenia oraz sposób przetwarzania substratu za pomocą takiego urządzenia do transportu substratu oraz układ do obróbki | |
| EP3551623A4 (en) | ORGANIC ELECTROLUMINESCENT CONNECTION AND ORGANIC ELECTROLUMINESCENT DEVICE THEREFOR | |
| EP3512306A4 (en) | ORGANIC LIGHT-EMITTING DEVICE | |
| EP3579292A4 (en) | ORGANIC LIGHT-EMITTING DEVICE | |
| EP3489169A4 (en) | TRANSPORTER | |
| EP3128510A4 (en) | Mounting substrate and electronic device | |
| EP3128505A4 (en) | Mounting substrate and electronic device | |
| EP3128504A4 (en) | Mounting substrate and electronic device | |
| KR102277659B9 (ko) | 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치 | |
| EP3196940A4 (en) | Substrate for mounting electronic element, and electronic device | |
| EP3716350A4 (en) | ORGANIC ELECTRONIC DEVICE | |
| KR102359840B9 (ko) | 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치 | |
| KR102039240B9 (ko) | 기판 처리 장치 | |
| EP3984061A4 (en) | Substrate process apparatus | |
| EP3483152A4 (en) | CONNECTION AND ORGANIC LIGHT-EMITTING DEVICE THEREFOR | |
| KR102330098B9 (ko) | 기판 처리 장치 | |
| SG11202002299UA (en) | Substrate processing device | |
| KR102670124B9 (ko) | 기판 처리 장치 | |
| SG10201914065UA (en) | Fabrication of a device on a carrier substrate | |
| KR102559334B9 (ko) | 기판처리장치 | |
| KR102535194B9 (ko) | 기판처리장치 | |
| KR102582762B9 (ko) | 기판 처리 방법 및 그를 이용한 유기 발광 소자 제조 방법 | |
| KR102358579B9 (ko) | 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치 | |
| EP3395799A4 (en) | CONNECTION AND ORGANIC ELECTRONIC DEVICE THEREFOR | |
| ITUA20164817A1 (it) | Substrato circuitizzato con componenti elettronici montati su sua porzione trasversale |