LT3422396T - Substrato transportavimo įrenginys, valymo įrenginys su padėklu, pritaikytu minėto įrenginio substrato laikikliui, ir substrato apdorojimo naudojant minėtą substrato transportavimo įrenginį bei valymo įrenginį būdas - Google Patents

Substrato transportavimo įrenginys, valymo įrenginys su padėklu, pritaikytu minėto įrenginio substrato laikikliui, ir substrato apdorojimo naudojant minėtą substrato transportavimo įrenginį bei valymo įrenginį būdas

Info

Publication number
LT3422396T
LT3422396T LTEP17178276.6T LT17178276T LT3422396T LT 3422396 T LT3422396 T LT 3422396T LT 17178276 T LT17178276 T LT 17178276T LT 3422396 T LT3422396 T LT 3422396T
Authority
LT
Lithuania
Prior art keywords
substrate
holder
treatment
transporting
transport
Prior art date
Application number
LTEP17178276.6T
Other languages
English (en)
Inventor
Hermann Schlemm
Mirko Kehr
Erik Ansorge
Sebastian Raschke
Original Assignee
Meyer Burger (Germany) Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meyer Burger (Germany) Gmbh filed Critical Meyer Burger (Germany) Gmbh
Publication of LT3422396T publication Critical patent/LT3422396T/lt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Warehouses Or Storage Devices (AREA)
LTEP17178276.6T 2017-06-28 2017-06-28 Substrato transportavimo įrenginys, valymo įrenginys su padėklu, pritaikytu minėto įrenginio substrato laikikliui, ir substrato apdorojimo naudojant minėtą substrato transportavimo įrenginį bei valymo įrenginį būdas LT3422396T (lt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP17178276.6A EP3422396B1 (de) 2017-06-28 2017-06-28 Vorrichtung zum transport eines substrats, behandlungsvorrichtung mit einer an einen substratträger einer solchen vorrichtung angepassten aufnahmeplatte und verfahren zum prozessieren eines substrates unter nutzung einer solchen vorrichtung zum transport eines substrats sowie behandlungsanlage

Publications (1)

Publication Number Publication Date
LT3422396T true LT3422396T (lt) 2021-09-10

Family

ID=59269799

Family Applications (1)

Application Number Title Priority Date Filing Date
LTEP17178276.6T LT3422396T (lt) 2017-06-28 2017-06-28 Substrato transportavimo įrenginys, valymo įrenginys su padėklu, pritaikytu minėto įrenginio substrato laikikliui, ir substrato apdorojimo naudojant minėtą substrato transportavimo įrenginį bei valymo įrenginį būdas

Country Status (13)

Country Link
US (2) US12009186B2 (lt)
EP (1) EP3422396B1 (lt)
JP (1) JP7062019B2 (lt)
KR (1) KR102355962B1 (lt)
CN (1) CN111010885B (lt)
EA (1) EA202000012A1 (lt)
ES (1) ES2884373T3 (lt)
HU (1) HUE055522T2 (lt)
LT (1) LT3422396T (lt)
PL (1) PL3422396T3 (lt)
PT (1) PT3422396T (lt)
SG (1) SG11201911850SA (lt)
WO (1) WO2019002014A1 (lt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3806138B1 (en) * 2019-10-09 2022-11-30 Infineon Technologies AG Transport system
JP7005690B2 (ja) * 2020-06-17 2022-02-10 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、およびプログラム
DE102020124030B4 (de) 2020-09-15 2022-06-15 centrotherm international AG Vorrichtung, System und Verfahren zur plasmaunterstützten chemischen Gasphasenabscheidung
DE102020124022A1 (de) 2020-09-15 2022-03-17 centrotherm international AG Werkstückträger, System und Betriebsverfahren für PECVD

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3214256A1 (de) 1982-04-17 1983-10-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zur handhabung eines substrates
IT8234031V0 (it) 1982-07-20 1982-07-20 San Marco Fotomec Spa Dispositivi di aggancio di carta in striscie per macchine sviluppatrici.
EP0189279B1 (en) 1985-01-22 1991-10-09 Applied Materials, Inc. Semiconductor processing system
US5053183A (en) 1989-09-21 1991-10-01 Aluminum Company Of America Method of handling green ceramic cards
TW277139B (lt) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
JP3151118B2 (ja) * 1995-03-01 2001-04-03 東京エレクトロン株式会社 熱処理装置
JP3586031B2 (ja) * 1996-03-27 2004-11-10 株式会社東芝 サセプタおよび熱処理装置および熱処理方法
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
JPH11163102A (ja) * 1997-11-27 1999-06-18 Kokusai Electric Co Ltd 半導体製造装置用サセプタ
JPH11176822A (ja) 1997-12-05 1999-07-02 Hitachi Ltd 半導体処理装置
JP4040162B2 (ja) * 1998-04-07 2008-01-30 沖電気工業株式会社 半導体ウエハの洗浄装置
JP3806272B2 (ja) * 1999-09-13 2006-08-09 三菱重工業株式会社 マルチチャンバ型真空処理システム及び基板搬送装置
JP2001332609A (ja) * 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
DE10047983A1 (de) 2000-09-28 2001-11-15 Wacker Siltronic Halbleitermat Randgreifer für Halbleiterscheibe
TW200305228A (en) * 2002-03-01 2003-10-16 Hitachi Int Electric Inc Heat treatment apparatus and a method for fabricating substrates
DE10232731A1 (de) * 2002-07-19 2004-02-05 Aixtron Ag Be- und Entladevorrichtung für eine Beschichtungseinrichtung
US6799940B2 (en) * 2002-12-05 2004-10-05 Tokyo Electron Limited Removable semiconductor wafer susceptor
JP2005223142A (ja) * 2004-02-05 2005-08-18 Tokyo Electron Ltd 基板保持具、成膜処理装置及び処理装置
JP4820755B2 (ja) * 2004-08-06 2011-11-24 株式会社日立国際電気 熱処理装置及び基板の製造方法
JP4355314B2 (ja) * 2005-12-14 2009-10-28 東京エレクトロン株式会社 基板処理装置、及び該装置の蓋釣支装置
JP2008108991A (ja) 2006-10-27 2008-05-08 Daihen Corp ワーク保持機構
JP2008244318A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd 基板搬送部材の洗浄方法、基板搬送装置及び基板処理システム
DE102008019023B4 (de) 2007-10-22 2009-09-24 Centrotherm Photovoltaics Ag Vakuum-Durchlaufanlage zur Prozessierung von Substraten
JP5330721B2 (ja) 2007-10-23 2013-10-30 オルボテック エルティ ソラー，エルエルシー 処理装置および処理方法
JP4857239B2 (ja) * 2007-10-25 2012-01-18 株式会社トプコン ウェハ保持装置
JP5058848B2 (ja) 2008-03-05 2012-10-24 東京エレクトロン株式会社 搬送アーム洗浄装置、搬送アーム洗浄方法、プログラム及びコンピュータ記憶媒体
US8216379B2 (en) * 2009-04-23 2012-07-10 Applied Materials, Inc. Non-circular substrate holders
JP5524668B2 (ja) * 2010-03-26 2014-06-18 ラピスセミコンダクタ株式会社 ウエハ保持装置及び方法
DE102010026209A1 (de) 2010-07-06 2012-01-12 Baumann Gmbh Greifer für plattenartige Gegenstände, insbesondere für Halbleiter-Wafer
JP2012195562A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法
JP5878813B2 (ja) * 2011-06-21 2016-03-08 東京エレクトロン株式会社 バッチ式処理装置
CN103065997B (zh) * 2011-10-19 2015-08-05 中芯国际集成电路制造(上海)有限公司 晶圆承载设备及晶圆承载的方法
JP5929227B2 (ja) * 2012-01-23 2016-06-01 大日本印刷株式会社 基板保持用枠体と基板保持用枠体の搬送方法
WO2013115957A1 (en) 2012-01-31 2013-08-08 Applied Materials, Inc. Stacked substrate processing chambers
JP5913162B2 (ja) * 2012-04-04 2016-04-27 東京エレクトロン株式会社 基板保持装置および基板保持方法
US9385017B2 (en) * 2012-08-06 2016-07-05 Nordson Corporation Apparatus and methods for handling workpieces of different sizes
CN203434134U (zh) * 2013-05-24 2014-02-12 北京京东方光电科技有限公司 一种基板传送装置
TWI650832B (zh) 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
EP2915901B1 (de) * 2014-03-07 2019-02-27 Meyer Burger (Germany) AG Vorrichtung zur Plasmaprozessierung mit Prozessgaszirkulation in multiplen Plasmen
US10837111B2 (en) 2015-01-12 2020-11-17 Applied Materials, Inc. Holding arrangement for supporting a substrate carrier and a mask carrier during layer deposition in a processing chamber, apparatus for depositing a layer on a substrate, and method for aligning a substrate carrier supporting a substrate and a mask carrier
US10438795B2 (en) * 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
JP6015836B2 (ja) * 2015-10-05 2016-10-26 大日本印刷株式会社 基板の基板保持用枠体への受け渡し方法と移載用架台への受け取り方法、および移載用架台
KR101715009B1 (ko) * 2016-08-23 2017-03-10 (주)브이앤아이솔루션 기판처리장치의 캐리어

Also Published As

Publication number Publication date
EP3422396B1 (de) 2021-08-04
US20210151302A1 (en) 2021-05-20
SG11201911850SA (en) 2020-01-30
JP2020526040A (ja) 2020-08-27
PT3422396T (pt) 2021-09-02
CN111010885A (zh) 2020-04-14
EA202000012A1 (ru) 2020-07-31
PL3422396T3 (pl) 2021-12-13
KR102355962B1 (ko) 2022-01-25
CN111010885B (zh) 2023-04-14
ES2884373T3 (es) 2021-12-10
KR20200018688A (ko) 2020-02-19
JP7062019B2 (ja) 2022-05-02
HUE055522T2 (hu) 2021-11-29
US12009186B2 (en) 2024-06-11
WO2019002014A1 (de) 2019-01-03
EP3422396A1 (de) 2019-01-02
US20240290584A1 (en) 2024-08-29

Similar Documents

Publication Publication Date Title
SG10201704180PA (en) Method and apparatus for processing wafer-shaped articles
DE112015004190A5 (de) Substrathaltevorrichtung, Substrattransportvorrichtung, Prozessieranordnung und Verfahren zum Prozessieren eines Substrats
HK1245417B (zh) 基板處理方法和基板處理裝置
SG11201702331YA (en) Substrate processing device, manufacturing method for semiconductor device, and reaction tube
SG10201604456TA (en) Substrate processing apparatus and substrate processing method
HUE055522T2 (hu) Szerkezet szubsztrátum szállítására, ilyen szerkezet szubsztrátumhordozójához hozzáillesztett felvevõlemezzel ellátott kezelõszerkezet és eljárás szubsztrátum processzálására ilyen szerkezetet használva a szubsztrátum szállítására, valamint kezelõberen...
SG10201508119XA (en) Substrate processing apparatus and processing method
EP3365911A4 (en) DEVICE AND METHOD FOR LOADING A SUBSTRATE INTO A VACUUM PROCESSING MODULE, DEVICE AND METHOD FOR TREATING A SUBSTRATE FOR A VACUUM SEPARATION PROCESS IN A VACUUM PROCESSING MODULE AND A VACUUM PROCESSING SYSTEM FOR A SUBSTRATE
IL275776B2 (en) Chemical solution and method for substrate treatment
PL3387354T3 (pl) Urządzenie do obróbki oraz sposób obróbki przedmiotów obrabianych
SG11201710300SA (en) Substrate holding device, film deposition device, and substrate holding method
EP3282475A4 (en) Substrate holding method, substrate holding device, processing method and processing device
SG10201403872TA (en) Substrate transport and feeding method and substrate transport and feeding apparatus
SG10201911998QA (en) Substrate processing method and substrate processing apparatus
HK1245858A1 (zh) 用於處理紡織基材的方法以及用於執行該方法的裝置
SG11201913857YA (en) Protective plate, substrate processing apparatus, and method of manufacturing semiconductor device
DE112014007251A5 (de) Vorrichtung zur lagerung und zum transport eines transplantats oder implantats
EP3142142A4 (en) Method and device for processing wide-bandgap semiconductor substrate
PT3409621T (pt) Aparelho para o transporte de artigos e instalação para o transporte de artigos
SG11201704746TA (en) Edge contact substrate transport method and apparatus
SG10201501153XA (en) Method and apparatus for processing wafer-shaped articles
EP3190069A4 (en) Substrate conveyance device and method for inspecting conveyor belt
SI3265413T1 (sl) Naprava za rokovanje s ploščatimi predmeti in postopek za njihovo pobiranje
EP3642386C0 (en) DEVICE AND METHOD FOR SUBSTRATE PROCESSING
SG11202000620SA (en) Substrate treatment apparatus, method for manufacturing semiconductor device, and program