LT3422396T - Substrato transportavimo įrenginys, valymo įrenginys su padėklu, pritaikytu minėto įrenginio substrato laikikliui, ir substrato apdorojimo naudojant minėtą substrato transportavimo įrenginį bei valymo įrenginį būdas - Google Patents

Substrato transportavimo įrenginys, valymo įrenginys su padėklu, pritaikytu minėto įrenginio substrato laikikliui, ir substrato apdorojimo naudojant minėtą substrato transportavimo įrenginį bei valymo įrenginį būdas

Info

Publication number
LT3422396T
LT3422396T LTEP17178276.6T LT17178276T LT3422396T LT 3422396 T LT3422396 T LT 3422396T LT 17178276 T LT17178276 T LT 17178276T LT 3422396 T LT3422396 T LT 3422396T
Authority
LT
Lithuania
Prior art keywords
substrate
unit
cleaning
treatment
transporting
Prior art date
Application number
LTEP17178276.6T
Other languages
English (en)
Inventor
Hermann Schlemm
Mirko Kehr
Erik Ansorge
Sebastian Raschke
Original Assignee
Meyer Burger (Germany) Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meyer Burger (Germany) Gmbh filed Critical Meyer Burger (Germany) Gmbh
Publication of LT3422396T publication Critical patent/LT3422396T/lt

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32743Means for moving the material to be treated for introducing the material into processing chamber
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306Horizontal transfer of a single workpiece
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3311Horizontal transfer of a batch of workpieces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Robotics (AREA)
  • Warehouses Or Storage Devices (AREA)
LTEP17178276.6T 2017-06-28 2017-06-28 Substrato transportavimo įrenginys, valymo įrenginys su padėklu, pritaikytu minėto įrenginio substrato laikikliui, ir substrato apdorojimo naudojant minėtą substrato transportavimo įrenginį bei valymo įrenginį būdas LT3422396T (lt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP17178276.6A EP3422396B1 (de) 2017-06-28 2017-06-28 Vorrichtung zum transport eines substrats, behandlungsvorrichtung mit einer an einen substratträger einer solchen vorrichtung angepassten aufnahmeplatte und verfahren zum prozessieren eines substrates unter nutzung einer solchen vorrichtung zum transport eines substrats sowie behandlungsanlage

Publications (1)

Publication Number Publication Date
LT3422396T true LT3422396T (lt) 2021-09-10

Family

ID=59269799

Family Applications (1)

Application Number Title Priority Date Filing Date
LTEP17178276.6T LT3422396T (lt) 2017-06-28 2017-06-28 Substrato transportavimo įrenginys, valymo įrenginys su padėklu, pritaikytu minėto įrenginio substrato laikikliui, ir substrato apdorojimo naudojant minėtą substrato transportavimo įrenginį bei valymo įrenginį būdas

Country Status (14)

Country Link
US (2) US12009186B2 (lt)
EP (1) EP3422396B1 (lt)
JP (1) JP7062019B2 (lt)
KR (1) KR102355962B1 (lt)
CN (1) CN111010885B (lt)
EA (1) EA202000012A1 (lt)
ES (1) ES2884373T3 (lt)
HU (1) HUE055522T2 (lt)
LT (1) LT3422396T (lt)
MY (1) MY203134A (lt)
PL (1) PL3422396T3 (lt)
PT (1) PT3422396T (lt)
SG (1) SG11201911850SA (lt)
WO (1) WO2019002014A1 (lt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3806138B1 (en) * 2019-10-09 2022-11-30 Infineon Technologies AG Transport system
JP7005690B2 (ja) * 2020-06-17 2022-02-10 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、およびプログラム
TWI798760B (zh) * 2020-08-26 2023-04-11 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法、基板保持具及程式
DE102020124022A1 (de) 2020-09-15 2022-03-17 centrotherm international AG Werkstückträger, System und Betriebsverfahren für PECVD
DE102020124030B4 (de) * 2020-09-15 2022-06-15 centrotherm international AG Vorrichtung, System und Verfahren zur plasmaunterstützten chemischen Gasphasenabscheidung
CN114763607A (zh) * 2021-01-14 2022-07-19 营口金辰机械股份有限公司 承托装置和等离子体增强化学气相沉积设备

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3214256A1 (de) 1982-04-17 1983-10-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zur handhabung eines substrates
IT8234031U1 (it) 1982-07-20 1984-01-20 Fotomec San Marco Spa Dispositivi di aggancio di carta in striscie per macchine sviluppatrici
EP0189279B1 (en) 1985-01-22 1991-10-09 Applied Materials, Inc. Semiconductor processing system
US5053183A (en) * 1989-09-21 1991-10-01 Aluminum Company Of America Method of handling green ceramic cards
TW277139B (lt) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
JP3151118B2 (ja) * 1995-03-01 2001-04-03 東京エレクトロン株式会社 熱処理装置
JP3586031B2 (ja) * 1996-03-27 2004-11-10 株式会社東芝 サセプタおよび熱処理装置および熱処理方法
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
JPH11163102A (ja) * 1997-11-27 1999-06-18 Kokusai Electric Co Ltd 半導体製造装置用サセプタ
JPH11176822A (ja) 1997-12-05 1999-07-02 Hitachi Ltd 半導体処理装置
JP4040162B2 (ja) * 1998-04-07 2008-01-30 沖電気工業株式会社 半導体ウエハの洗浄装置
JP3806272B2 (ja) * 1999-09-13 2006-08-09 三菱重工業株式会社 マルチチャンバ型真空処理システム及び基板搬送装置
JP2001332609A (ja) * 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
DE10047983A1 (de) 2000-09-28 2001-11-15 Wacker Siltronic Halbleitermat Randgreifer für Halbleiterscheibe
TW200305228A (en) * 2002-03-01 2003-10-16 Hitachi Int Electric Inc Heat treatment apparatus and a method for fabricating substrates
DE10232731A1 (de) * 2002-07-19 2004-02-05 Aixtron Ag Be- und Entladevorrichtung für eine Beschichtungseinrichtung
US6799940B2 (en) * 2002-12-05 2004-10-05 Tokyo Electron Limited Removable semiconductor wafer susceptor
JP2005223142A (ja) * 2004-02-05 2005-08-18 Tokyo Electron Ltd 基板保持具、成膜処理装置及び処理装置
KR100852975B1 (ko) * 2004-08-06 2008-08-19 가부시키가이샤 히다치 고쿠사이 덴키 열처리 장치 및 기판의 제조 방법
JP4355314B2 (ja) * 2005-12-14 2009-10-28 東京エレクトロン株式会社 基板処理装置、及び該装置の蓋釣支装置
JP2008108991A (ja) 2006-10-27 2008-05-08 Daihen Corp ワーク保持機構
JP2008244318A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd 基板搬送部材の洗浄方法、基板搬送装置及び基板処理システム
DE102008019023B4 (de) 2007-10-22 2009-09-24 Centrotherm Photovoltaics Ag Vakuum-Durchlaufanlage zur Prozessierung von Substraten
JP5330721B2 (ja) * 2007-10-23 2013-10-30 オルボテック エルティ ソラー,エルエルシー 処理装置および処理方法
JP4857239B2 (ja) * 2007-10-25 2012-01-18 株式会社トプコン ウェハ保持装置
JP5058848B2 (ja) 2008-03-05 2012-10-24 東京エレクトロン株式会社 搬送アーム洗浄装置、搬送アーム洗浄方法、プログラム及びコンピュータ記憶媒体
US8216379B2 (en) * 2009-04-23 2012-07-10 Applied Materials, Inc. Non-circular substrate holders
JP5524668B2 (ja) * 2010-03-26 2014-06-18 ラピスセミコンダクタ株式会社 ウエハ保持装置及び方法
DE102010026209A1 (de) 2010-07-06 2012-01-12 Baumann Gmbh Greifer für plattenartige Gegenstände, insbesondere für Halbleiter-Wafer
JP2012195562A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法
JP5878813B2 (ja) * 2011-06-21 2016-03-08 東京エレクトロン株式会社 バッチ式処理装置
CN103065997B (zh) * 2011-10-19 2015-08-05 中芯国际集成电路制造(上海)有限公司 晶圆承载设备及晶圆承载的方法
JP5929227B2 (ja) * 2012-01-23 2016-06-01 大日本印刷株式会社 基板保持用枠体と基板保持用枠体の搬送方法
WO2013115957A1 (en) 2012-01-31 2013-08-08 Applied Materials, Inc. Stacked substrate processing chambers
JP5913162B2 (ja) * 2012-04-04 2016-04-27 東京エレクトロン株式会社 基板保持装置および基板保持方法
US9385017B2 (en) * 2012-08-06 2016-07-05 Nordson Corporation Apparatus and methods for handling workpieces of different sizes
CN203434134U (zh) * 2013-05-24 2014-02-12 北京京东方光电科技有限公司 一种基板传送装置
TWI650832B (zh) 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
EP2915901B1 (de) * 2014-03-07 2019-02-27 Meyer Burger (Germany) AG Vorrichtung zur Plasmaprozessierung mit Prozessgaszirkulation in multiplen Plasmen
CN107109621A (zh) * 2015-01-12 2017-08-29 应用材料公司 用于在处理腔室中的层沉积期间支撑基板载体和掩模载体的固持布置、用于在基板上沉积层的设备、以及用于对准支撑基板的基板载体与掩模载体的方法
US10438795B2 (en) * 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
JP6015836B2 (ja) * 2015-10-05 2016-10-26 大日本印刷株式会社 基板の基板保持用枠体への受け渡し方法と移載用架台への受け取り方法、および移載用架台
KR101715009B1 (ko) * 2016-08-23 2017-03-10 (주)브이앤아이솔루션 기판처리장치의 캐리어

Also Published As

Publication number Publication date
WO2019002014A1 (de) 2019-01-03
US20210151302A1 (en) 2021-05-20
HUE055522T2 (hu) 2021-11-29
MY203134A (en) 2024-06-10
CN111010885A (zh) 2020-04-14
JP7062019B2 (ja) 2022-05-02
EA202000012A1 (ru) 2020-07-31
KR102355962B1 (ko) 2022-01-25
US12009186B2 (en) 2024-06-11
CN111010885B (zh) 2023-04-14
JP2020526040A (ja) 2020-08-27
EP3422396A1 (de) 2019-01-02
SG11201911850SA (en) 2020-01-30
PL3422396T3 (pl) 2021-12-13
EP3422396B1 (de) 2021-08-04
US20240290584A1 (en) 2024-08-29
KR20200018688A (ko) 2020-02-19
PT3422396T (pt) 2021-09-02
ES2884373T3 (es) 2021-12-10

Similar Documents

Publication Publication Date Title
IL287355A (en) A spray generating device for use with a spray generating item
GB2570974B (en) Cleaning robot and cleaning device thereof
EP3684237A4 (en) PORTABLE SURFACE CLEANING DEVICE
EP3658058A4 (en) HANDLE FOR MEDICAL DEVICE
LT3422396T (lt) Substrato transportavimo įrenginys, valymo įrenginys su padėklu, pritaikytu minėto įrenginio substrato laikikliui, ir substrato apdorojimo naudojant minėtą substrato transportavimo įrenginį bei valymo įrenginį būdas
EP3595501A4 (en) CLEANING DEVICE
DK3406543T3 (da) Artikeltransferindretning
EP3463117A4 (en) MEDICAL GRIPPER
EP3636594A4 (en) CLEANING DEVICE AND CLEANING PROCEDURES
PL3585234T3 (pl) Urządzenie czyszczące
SG11201913717RA (en) Substrate holding device
EP3706702C0 (en) EXOSKELETON DEVICE FOR THE HAND
SG11201606024UA (en) Plasma treatment device and wafer transfer tray
SG11202007852YA (en) Substrate cleaning device and substrate cleaning method
EP3600705A4 (en) CLEANING DEVICE
EP3524113A4 (en) CLEANING DEVICE
EP3769918C0 (en) ARTICLE TRANSFER DEVICE
SG10201705171XA (en) Cleaning apparatus and substrate processing apparatus
EP3797940A4 (en) Robot hand and conveyance device
EP3681360C0 (de) Flächenreinigungsgerät
EP3444204A4 (en) ARTICLE TRANSPORTER
EP3623062A4 (en) CLEANING DEVICE AND CLEANING DEVICE
KR102215965B9 (ko) 가스 분사 장치 및 이를 포함하는 기판 처리 장치
EP3748110A4 (en) INTERNAL HANDLE DEVICE
SG10201906216RA (en) Substrate cleaning device and substrate cleaning method