DE69034023D1 - Verfahren zur Herstellung einer Halbleiteranordnung mit einer leitfähigen Schicht - Google Patents
Verfahren zur Herstellung einer Halbleiteranordnung mit einer leitfähigen SchichtInfo
- Publication number
- DE69034023D1 DE69034023D1 DE69034023T DE69034023T DE69034023D1 DE 69034023 D1 DE69034023 D1 DE 69034023D1 DE 69034023 T DE69034023 T DE 69034023T DE 69034023 T DE69034023 T DE 69034023T DE 69034023 D1 DE69034023 D1 DE 69034023D1
- Authority
- DE
- Germany
- Prior art keywords
- film
- producing
- semiconductor device
- conductive layer
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 230000002269 spontaneous effect Effects 0.000 abstract 1
- 238000006557 surface reaction Methods 0.000 abstract 1
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
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- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1233929A JP2746289B2 (ja) | 1989-09-09 | 1989-09-09 | 素子の作製方法並びに半導体素子およびその作製方法 |
PCT/JP1990/001149 WO1991003841A1 (en) | 1989-09-09 | 1990-09-07 | Element, method of fabricating the same, semiconductor element and method of fabricating the same |
Publications (2)
Publication Number | Publication Date |
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DE69034023D1 true DE69034023D1 (de) | 2003-01-16 |
DE69034023T2 DE69034023T2 (de) | 2003-04-30 |
Family
ID=16962820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69034023T Expired - Lifetime DE69034023T2 (de) | 1989-09-09 | 1990-09-07 | Verfahren zur Herstellung einer Halbleiteranordnung mit einer leitfähigen Schicht |
Country Status (6)
Country | Link |
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US (2) | US5541444A (de) |
EP (1) | EP0463165B1 (de) |
JP (1) | JP2746289B2 (de) |
AT (1) | ATE229231T1 (de) |
DE (1) | DE69034023T2 (de) |
WO (1) | WO1991003841A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3695606B2 (ja) * | 1996-04-01 | 2005-09-14 | 忠弘 大見 | 半導体装置及びその製造方法 |
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-
1989
- 1989-09-09 JP JP1233929A patent/JP2746289B2/ja not_active Expired - Lifetime
-
1990
- 1990-09-07 AT AT90913222T patent/ATE229231T1/de not_active IP Right Cessation
- 1990-09-07 WO PCT/JP1990/001149 patent/WO1991003841A1/ja active IP Right Grant
- 1990-09-07 EP EP90913222A patent/EP0463165B1/de not_active Expired - Lifetime
- 1990-09-07 DE DE69034023T patent/DE69034023T2/de not_active Expired - Lifetime
-
1994
- 1994-09-12 US US08/304,219 patent/US5541444A/en not_active Expired - Lifetime
-
1995
- 1995-05-15 US US08/440,917 patent/US5854097A/en not_active Expired - Lifetime
Also Published As
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---|---|
US5541444A (en) | 1996-07-30 |
WO1991003841A1 (en) | 1991-03-21 |
DE69034023T2 (de) | 2003-04-30 |
JPH0397231A (ja) | 1991-04-23 |
EP0463165A4 (en) | 1992-03-11 |
US5854097A (en) | 1998-12-29 |
JP2746289B2 (ja) | 1998-05-06 |
EP0463165A1 (de) | 1992-01-02 |
ATE229231T1 (de) | 2002-12-15 |
EP0463165B1 (de) | 2002-12-04 |
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