CN1812121B - 绝缘栅半导体器件及其制造方法 - Google Patents
绝缘栅半导体器件及其制造方法 Download PDFInfo
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- CN1812121B CN1812121B CN200510103685.3A CN200510103685A CN1812121B CN 1812121 B CN1812121 B CN 1812121B CN 200510103685 A CN200510103685 A CN 200510103685A CN 1812121 B CN1812121 B CN 1812121B
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- semiconductor region
- insulated gate
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000009413 insulation Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 7
- 230000004807 localization Effects 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 239000005435 mesosphere Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 210000002421 cell wall Anatomy 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000035755 proliferation Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005019169 | 2005-01-27 | ||
JP2005019169A JP4857566B2 (ja) | 2005-01-27 | 2005-01-27 | 絶縁ゲート型半導体装置とその製造方法 |
JP2005-019169 | 2005-01-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1812121A CN1812121A (zh) | 2006-08-02 |
CN1812121B true CN1812121B (zh) | 2011-05-18 |
Family
ID=36686510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200510103685.3A Active CN1812121B (zh) | 2005-01-27 | 2005-09-09 | 绝缘栅半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7633122B2 (zh) |
JP (1) | JP4857566B2 (zh) |
CN (1) | CN1812121B (zh) |
DE (1) | DE102005042048B4 (zh) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4857566B2 (ja) | 2005-01-27 | 2012-01-18 | 富士電機株式会社 | 絶縁ゲート型半導体装置とその製造方法 |
JP5984282B2 (ja) | 2006-04-27 | 2016-09-06 | 富士電機株式会社 | 縦型トレンチ型絶縁ゲートmos半導体装置 |
JP5261980B2 (ja) * | 2007-05-17 | 2013-08-14 | 富士電機株式会社 | 絶縁ゲート型半導体装置の製造方法 |
JP5596278B2 (ja) * | 2007-07-10 | 2014-09-24 | 富士電機株式会社 | トレンチ型絶縁ゲートmos半導体装置 |
JP2009135224A (ja) * | 2007-11-29 | 2009-06-18 | Sanyo Electric Co Ltd | 絶縁ゲートバイポーラトランジスタ |
JP2010232335A (ja) * | 2009-03-26 | 2010-10-14 | Sanyo Electric Co Ltd | 絶縁ゲートバイポーラトランジスタ |
JP5568904B2 (ja) * | 2009-06-26 | 2014-08-13 | 富士電機株式会社 | 半導体装置 |
JP5516600B2 (ja) * | 2009-12-18 | 2014-06-11 | 富士電機株式会社 | 半導体装置 |
WO2011111500A1 (ja) | 2010-03-09 | 2011-09-15 | 富士電機システムズ株式会社 | 半導体装置 |
CN102280474B (zh) * | 2010-06-09 | 2014-02-19 | 尹海洲 | 一种igbt器件及其制造方法 |
CN102804385B (zh) | 2010-11-30 | 2016-08-03 | 富士电机株式会社 | 半导体器件 |
JP5879732B2 (ja) * | 2011-04-18 | 2016-03-08 | 富士電機株式会社 | トレンチ絶縁ゲート型半導体装置 |
JP5644793B2 (ja) * | 2012-03-02 | 2014-12-24 | 株式会社デンソー | 半導体装置 |
JP2013251468A (ja) * | 2012-06-01 | 2013-12-12 | Fuji Electric Co Ltd | 半導体装置および半導体装置の制御方法 |
JP5867617B2 (ja) * | 2012-10-17 | 2016-02-24 | 富士電機株式会社 | 半導体装置 |
CN105531825B (zh) | 2013-12-16 | 2019-01-01 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP6320808B2 (ja) | 2014-03-19 | 2018-05-09 | 富士電機株式会社 | トレンチmos型半導体装置 |
WO2015177910A1 (ja) * | 2014-05-22 | 2015-11-26 | 三菱電機株式会社 | 半導体装置 |
JP2016063048A (ja) | 2014-09-17 | 2016-04-25 | 富士電機株式会社 | トレンチ型絶縁ゲートバイポーラトランジスタ及びその製造方法 |
WO2016098409A1 (ja) | 2014-12-19 | 2016-06-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6406361B2 (ja) | 2015-02-03 | 2018-10-17 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP6448434B2 (ja) | 2015-03-25 | 2019-01-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6495751B2 (ja) | 2015-06-10 | 2019-04-03 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
JP6606364B2 (ja) | 2015-07-02 | 2019-11-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6797005B2 (ja) * | 2016-11-24 | 2020-12-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6950186B2 (ja) | 2017-01-17 | 2021-10-13 | 富士電機株式会社 | 半導体装置 |
JP6963982B2 (ja) | 2017-12-07 | 2021-11-10 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6971868B2 (ja) | 2018-01-26 | 2021-11-24 | 三菱電機株式会社 | 半導体装置 |
CN110459596B (zh) * | 2019-08-29 | 2023-02-07 | 电子科技大学 | 一种横向绝缘栅双极晶体管及其制备方法 |
JP6791337B2 (ja) * | 2019-10-24 | 2020-11-25 | 富士電機株式会社 | トレンチmos型半導体装置 |
US20220336594A1 (en) * | 2021-04-14 | 2022-10-20 | Infineon Technologies Austria Ag | Transistor device having charge compensating field plates in-line with body contacts |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6380586B1 (en) * | 1999-02-05 | 2002-04-30 | Fuji Electric Co., Ltd. | Trench-type insulated gate bipolar transistor |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58171861A (ja) * | 1982-04-01 | 1983-10-08 | Toshiba Corp | 半導体装置 |
EP1469524A3 (en) | 1991-08-08 | 2005-07-06 | Kabushiki Kaisha Toshiba | Insulated trench gate bipolar transistor |
JP3307785B2 (ja) * | 1994-12-13 | 2002-07-24 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
DE19651108C2 (de) * | 1996-04-11 | 2000-11-23 | Mitsubishi Electric Corp | Halbleitereinrichtung des Gategrabentyps mit hoher Durchbruchsspannung und ihr Herstellungsverfahren |
JP3410913B2 (ja) | 1996-11-29 | 2003-05-26 | 株式会社東芝 | 電力用半導体装置 |
DE19705276A1 (de) * | 1996-12-06 | 1998-08-20 | Semikron Elektronik Gmbh | IGBT mit Trench-Gate-Struktur |
JP3545590B2 (ja) | 1997-03-14 | 2004-07-21 | 株式会社東芝 | 半導体装置 |
US6005271A (en) * | 1997-11-05 | 1999-12-21 | Magepower Semiconductor Corp. | Semiconductor cell array with high packing density |
JPH11204781A (ja) * | 1998-01-07 | 1999-07-30 | Nec Yamagata Ltd | 半導体装置 |
JP3523056B2 (ja) * | 1998-03-23 | 2004-04-26 | 株式会社東芝 | 半導体装置 |
JP3400348B2 (ja) * | 1998-05-19 | 2003-04-28 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
JP2000183340A (ja) * | 1998-12-15 | 2000-06-30 | Fuji Electric Co Ltd | 半導体装置およびその駆動方法 |
EP1835542A3 (en) * | 1999-09-30 | 2007-10-03 | Kabushiki Kaisha Toshiba | Semiconductor device with trench gate |
JP2001274400A (ja) * | 2000-03-28 | 2001-10-05 | Toshiba Corp | 半導体装置 |
JP4581179B2 (ja) | 2000-04-26 | 2010-11-17 | 富士電機システムズ株式会社 | 絶縁ゲート型半導体装置 |
JP2003197912A (ja) * | 2001-12-25 | 2003-07-11 | Toshiba Corp | 絶縁ゲート型半導体装置 |
DE10203164B4 (de) * | 2002-01-28 | 2005-06-16 | Infineon Technologies Ag | Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung |
JP3927111B2 (ja) * | 2002-10-31 | 2007-06-06 | 株式会社東芝 | 電力用半導体装置 |
JP3971327B2 (ja) * | 2003-03-11 | 2007-09-05 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
US7075147B2 (en) * | 2003-06-11 | 2006-07-11 | International Rectifier Corporation | Low on resistance power MOSFET with variably spaced trenches and offset contacts |
JP4857566B2 (ja) | 2005-01-27 | 2012-01-18 | 富士電機株式会社 | 絶縁ゲート型半導体装置とその製造方法 |
-
2005
- 2005-01-27 JP JP2005019169A patent/JP4857566B2/ja active Active
- 2005-09-02 DE DE102005042048.6A patent/DE102005042048B4/de active Active
- 2005-09-09 CN CN200510103685.3A patent/CN1812121B/zh active Active
- 2005-09-14 US US11/226,860 patent/US7633122B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6380586B1 (en) * | 1999-02-05 | 2002-04-30 | Fuji Electric Co., Ltd. | Trench-type insulated gate bipolar transistor |
Non-Patent Citations (1)
Title |
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JP特开2001-274400A 2001.10.05 |
Also Published As
Publication number | Publication date |
---|---|
DE102005042048A1 (de) | 2006-08-03 |
US20060163649A1 (en) | 2006-07-27 |
JP4857566B2 (ja) | 2012-01-18 |
DE102005042048B4 (de) | 2014-04-24 |
JP2006210547A (ja) | 2006-08-10 |
US7633122B2 (en) | 2009-12-15 |
CN1812121A (zh) | 2006-08-02 |
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ASS | Succession or assignment of patent right |
Owner name: FUJI MOTOR SYSTEM CO., LTD. Free format text: FORMER OWNER: FUJI MOTOR ELECTRONICS TECHNOLOGY CO., LTD. Effective date: 20100524 |
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Effective date of registration: 20100524 Address after: Tokyo, Japan Applicant after: Fuji Electric Systems Co., Ltd. Address before: Tokyo, Japan Applicant before: Fuji Electronic Device Technol |
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Owner name: FUJI ELECTRIC CO., LTD. Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD. Effective date: 20110921 |
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Effective date of registration: 20110921 Address after: Kanagawa Patentee after: Fuji Electric Co., Ltd. Address before: Tokyo, Japan Patentee before: Fuji Electric Systems Co., Ltd. |