JP5879732B2 - トレンチ絶縁ゲート型半導体装置 - Google Patents
トレンチ絶縁ゲート型半導体装置 Download PDFInfo
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- JP5879732B2 JP5879732B2 JP2011091992A JP2011091992A JP5879732B2 JP 5879732 B2 JP5879732 B2 JP 5879732B2 JP 2011091992 A JP2011091992 A JP 2011091992A JP 2011091992 A JP2011091992 A JP 2011091992A JP 5879732 B2 JP5879732 B2 JP 5879732B2
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- trench
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- oxide film
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000002344 surface layer Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 description 42
- 230000015556 catabolic process Effects 0.000 description 15
- 239000010410 layer Substances 0.000 description 11
- 230000005684 electric field Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Description
2 ドリフト層
3 pベース領域
4 n+エミッタ領域
5、5a、20 ゲート酸化膜
6、21 ゲート電極
7 層間絶縁膜
8 エミッタ電極
9、19 トレンチ
9a 平行トレンチ部分
9b 斜行トレンチ部分
Claims (3)
- 主面の面方位が(100)のシリコン半導体基板に、内面にゲート酸化膜を介してゲート電極が埋設される平行ストライプ状表面パターンの複数トレンチを有し、前記複数トレンチ間にそれぞれ挟まれる半導体基板の表層には、前記トレンチの側壁面に接する、第2導電型ベース領域と該領域の表層に配置される第1導電型エミッタ領域とからなるセル領域が、所定の表面間隔をおいて配置され、かつ隣接するトレンチ間の半導体基板の表面では、前記セル領域と半導体基板の表面とが交互に配置される配置パターンを有し、前記セル領域を挟む平行トレンチ部分の表面間隔が前記セル領域を挟まない平行トレンチ部分の表面間隔より広くされるとともに、前記トレンチの表面間隔の異なる平行トレンチ部分同士は斜行トレンチ部分によって交差すること無く連結されるトレンチ表面パターンを備え、前記平行トレンチ部分の側壁面の面方位が、前記主面の面方位(100)と直交する等価な面方位{100}であり、前記斜行トレンチ部分の側壁面のゲート酸化膜の膜厚が前記平行トレンチ部分の側壁面のゲート酸化膜の膜厚より厚いことを特徴とするトレンチ絶縁ゲート型半導体装置。
- 前記斜行トレンチ部分の側壁面の面方位が{110}であることを特徴とする請求項1記載のトレンチ絶縁ゲート型半導体装置。
- 前記トレンチ絶縁ゲート型半導体装置がトレンチ型絶縁ゲートバイポーラトランジスタであることを特徴とする請求項1または2記載のトレンチ絶縁ゲート型半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011091992A JP5879732B2 (ja) | 2011-04-18 | 2011-04-18 | トレンチ絶縁ゲート型半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011091992A JP5879732B2 (ja) | 2011-04-18 | 2011-04-18 | トレンチ絶縁ゲート型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012227255A JP2012227255A (ja) | 2012-11-15 |
JP5879732B2 true JP5879732B2 (ja) | 2016-03-08 |
Family
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JP2011091992A Active JP5879732B2 (ja) | 2011-04-18 | 2011-04-18 | トレンチ絶縁ゲート型半導体装置 |
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JP (1) | JP5879732B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9570577B2 (en) * | 2014-05-12 | 2017-02-14 | Infineon Technologies Ag | Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas |
US9231091B2 (en) | 2014-05-12 | 2016-01-05 | Infineon Technologies Ag | Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones |
JP6825520B2 (ja) | 2017-09-14 | 2021-02-03 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法、電力変換装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0246716A (ja) * | 1988-08-08 | 1990-02-16 | Seiko Epson Corp | シリコン・ウェーハ |
JP3490857B2 (ja) * | 1996-11-25 | 2004-01-26 | 三洋電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP3329707B2 (ja) * | 1997-09-30 | 2002-09-30 | 株式会社東芝 | 半導体装置 |
JP4158453B2 (ja) * | 2002-08-22 | 2008-10-01 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP4857566B2 (ja) * | 2005-01-27 | 2012-01-18 | 富士電機株式会社 | 絶縁ゲート型半導体装置とその製造方法 |
JP5147341B2 (ja) * | 2007-09-21 | 2013-02-20 | パナソニック株式会社 | 半導体装置 |
JP2010232335A (ja) * | 2009-03-26 | 2010-10-14 | Sanyo Electric Co Ltd | 絶縁ゲートバイポーラトランジスタ |
-
2011
- 2011-04-18 JP JP2011091992A patent/JP5879732B2/ja active Active
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JP2012227255A (ja) | 2012-11-15 |
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