CN1805144A - 半导体集成电路及其制造工艺 - Google Patents
半导体集成电路及其制造工艺 Download PDFInfo
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- CN1805144A CN1805144A CNA2005100779420A CN200510077942A CN1805144A CN 1805144 A CN1805144 A CN 1805144A CN A2005100779420 A CNA2005100779420 A CN A2005100779420A CN 200510077942 A CN200510077942 A CN 200510077942A CN 1805144 A CN1805144 A CN 1805144A
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- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
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Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005004405 | 2005-01-11 | ||
JP2005-004405 | 2005-01-11 | ||
JP2005004405A JP4361880B2 (ja) | 2005-01-11 | 2005-01-11 | 半導体集積回路装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2010100029675A Division CN101777516B (zh) | 2005-01-11 | 2005-06-15 | 半导体集成电路的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN1805144A true CN1805144A (zh) | 2006-07-19 |
CN1805144B CN1805144B (zh) | 2011-06-08 |
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Application Number | Title | Priority Date | Filing Date |
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CN2005100779420A Active CN1805144B (zh) | 2005-01-11 | 2005-06-15 | 半导体集成电路及其制造工艺 |
CN2010100029675A Active CN101777516B (zh) | 2005-01-11 | 2005-06-15 | 半导体集成电路的制造方法 |
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CN2010100029675A Active CN101777516B (zh) | 2005-01-11 | 2005-06-15 | 半导体集成电路的制造方法 |
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Country | Link |
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US (1) | US7378305B2 (zh) |
EP (1) | EP1679743B1 (zh) |
JP (1) | JP4361880B2 (zh) |
KR (1) | KR100669935B1 (zh) |
CN (2) | CN1805144B (zh) |
TW (1) | TWI261357B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101645457B (zh) * | 2008-08-08 | 2012-01-25 | 万国半导体股份有限公司 | 超自对准沟槽型双扩散金属氧化物半导体晶体管结构及其制造方法 |
CN103151258A (zh) * | 2011-12-06 | 2013-06-12 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN103378150A (zh) * | 2012-04-23 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN103515210A (zh) * | 2012-06-20 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | 一种后栅极工艺晶体管及其形成方法 |
CN103779279A (zh) * | 2012-10-26 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN104103590A (zh) * | 2013-04-15 | 2014-10-15 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
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CN105679826A (zh) * | 2014-12-04 | 2016-06-15 | 三星电子株式会社 | 半导体器件 |
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- 2005-05-20 EP EP05011032.9A patent/EP1679743B1/en active Active
- 2005-05-20 TW TW094116428A patent/TWI261357B/zh active
- 2005-06-07 KR KR1020050048231A patent/KR100669935B1/ko active IP Right Grant
- 2005-06-15 CN CN2005100779420A patent/CN1805144B/zh active Active
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JP4361880B2 (ja) | 2009-11-11 |
US7378305B2 (en) | 2008-05-27 |
CN1805144B (zh) | 2011-06-08 |
CN101777516B (zh) | 2013-02-13 |
KR20060082017A (ko) | 2006-07-14 |
TW200625642A (en) | 2006-07-16 |
EP1679743B1 (en) | 2018-10-10 |
US20060151776A1 (en) | 2006-07-13 |
JP2006196549A (ja) | 2006-07-27 |
KR100669935B1 (ko) | 2007-01-16 |
CN101777516A (zh) | 2010-07-14 |
EP1679743A2 (en) | 2006-07-12 |
TWI261357B (en) | 2006-09-01 |
EP1679743A3 (en) | 2007-12-05 |
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