CN1742066B - 抛光含硅电介质的方法 - Google Patents

抛光含硅电介质的方法 Download PDF

Info

Publication number
CN1742066B
CN1742066B CN200480002763.4A CN200480002763A CN1742066B CN 1742066 B CN1742066 B CN 1742066B CN 200480002763 A CN200480002763 A CN 200480002763A CN 1742066 B CN1742066 B CN 1742066B
Authority
CN
China
Prior art keywords
polishing
acid
substrate
additive
inorganic abradant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN200480002763.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN1742066A (zh
Inventor
菲利普·W·卡特
蒂莫西·P·约翰斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of CN1742066A publication Critical patent/CN1742066A/zh
Application granted granted Critical
Publication of CN1742066B publication Critical patent/CN1742066B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN200480002763.4A 2003-02-03 2004-02-02 抛光含硅电介质的方法 Expired - Lifetime CN1742066B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/356,970 2003-02-03
US10/356,970 US7071105B2 (en) 2003-02-03 2003-02-03 Method of polishing a silicon-containing dielectric
PCT/US2004/002908 WO2004069947A1 (en) 2003-02-03 2004-02-02 Method of polishing a silicon-containing dielectric

Publications (2)

Publication Number Publication Date
CN1742066A CN1742066A (zh) 2006-03-01
CN1742066B true CN1742066B (zh) 2015-10-21

Family

ID=32770920

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200480002763.4A Expired - Lifetime CN1742066B (zh) 2003-02-03 2004-02-02 抛光含硅电介质的方法

Country Status (7)

Country Link
US (4) US7071105B2 (https=)
EP (1) EP1601735B1 (https=)
JP (1) JP4927526B2 (https=)
KR (2) KR20050098288A (https=)
CN (1) CN1742066B (https=)
TW (1) TWI283022B (https=)
WO (1) WO2004069947A1 (https=)

Families Citing this family (187)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7316603B2 (en) 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
JP2004101849A (ja) * 2002-09-09 2004-04-02 Mitsubishi Gas Chem Co Inc 洗浄剤組成物
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5026665B2 (ja) * 2004-10-15 2012-09-12 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US20060097219A1 (en) * 2004-11-08 2006-05-11 Applied Materials, Inc. High selectivity slurry compositions for chemical mechanical polishing
JP4027929B2 (ja) * 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
US7081041B1 (en) 2005-02-28 2006-07-25 Hitachi Global Storage Technologies Netherlands B.V. Manufacturing method for forming a write head top pole using chemical mechanical polishing with a DLC stop layer
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
US7497938B2 (en) * 2005-03-22 2009-03-03 Cabot Microelectronics Corporation Tribo-chronoamperometry as a tool for CMP application
JP2006269910A (ja) * 2005-03-25 2006-10-05 Fuji Photo Film Co Ltd 金属用研磨液及びこれを用いた研磨方法
JP2006318952A (ja) * 2005-05-10 2006-11-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US7731864B2 (en) * 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
US8353740B2 (en) 2005-09-09 2013-01-15 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US7708904B2 (en) * 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US7842193B2 (en) * 2005-09-29 2010-11-30 Fujifilm Corporation Polishing liquid
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
US20070129682A1 (en) * 2005-12-02 2007-06-07 Tracee Eidenschink Guidewire with perfusion capability
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
KR100800481B1 (ko) * 2006-08-16 2008-02-04 삼성전자주식회사 화학기계적 연마방법 및 이를 이용한 소자 분리막 형성방법
US20080182413A1 (en) * 2006-08-16 2008-07-31 Menk Gregory E Selective chemistry for fixed abrasive cmp
US7776230B2 (en) * 2006-08-30 2010-08-17 Cabot Microelectronics Corporation CMP system utilizing halogen adduct
US7629258B2 (en) 2006-11-22 2009-12-08 Clarkson University Method for one-to-one polishing of silicon nitride and silicon oxide
US20080116171A1 (en) * 2006-11-22 2008-05-22 Clarkson University Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide
US7723234B2 (en) 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
KR100725803B1 (ko) * 2006-12-05 2007-06-08 제일모직주식회사 실리콘 웨이퍼 최종 연마용 슬러리 조성물　및 이를 이용한실리콘 웨이퍼 최종 연마 방법
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8591764B2 (en) 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
KR100807220B1 (ko) * 2007-02-01 2008-02-28 삼성전자주식회사 불휘발성 메모리 장치의 제조 방법
DE102007035992A1 (de) * 2007-05-25 2008-11-27 Evonik Degussa Gmbh Ceroxid, Siliciumdioxid oder Schichtsilikat und Aminosäure enthaltende Dispersion
US20080314872A1 (en) * 2007-06-19 2008-12-25 Ferro Corporation Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same
US20100261632A1 (en) * 2007-08-02 2010-10-14 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
JP5646996B2 (ja) * 2007-09-21 2014-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
JP2009123880A (ja) 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
JP5306644B2 (ja) * 2007-12-29 2013-10-02 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法
US7922926B2 (en) * 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
CN101492592B (zh) * 2008-01-25 2014-01-29 安集微电子（上海）有限公司 一种化学机械抛光液
KR101564676B1 (ko) * 2008-02-01 2015-11-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 연마 방법
JP5326492B2 (ja) * 2008-02-12 2013-10-30 日立化成株式会社 Ｃｍｐ用研磨液、基板の研磨方法及び電子部品
JP5375025B2 (ja) * 2008-02-27 2013-12-25 日立化成株式会社 研磨液
DE102008002321A1 (de) 2008-06-10 2009-12-17 Evonik Degussa Gmbh Ceroxid und partikuläres Additiv enthaltende Dispersion
CN101821058A (zh) * 2008-06-11 2010-09-01 信越化学工业株式会社 合成石英玻璃基板用抛光剂
JP5369506B2 (ja) * 2008-06-11 2013-12-18 信越化学工業株式会社 合成石英ガラス基板用研磨剤
CN102105267B (zh) * 2008-06-18 2016-08-03 福吉米株式会社 抛光组合物及利用该抛光组合物的抛光方法
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
WO2010037730A1 (en) * 2008-10-03 2010-04-08 Basf Se Chemical mechanical polishing (cmp) polishing solution with enhanced performance
KR101268615B1 (ko) 2008-12-11 2013-06-04 히타치가세이가부시끼가이샤 Ｃｍｐ용 연마액 및 이것을 이용한 연마 방법
CN101475791B (zh) * 2009-01-20 2012-08-29 江苏工业学院 氧化铈/氧化硅复合磨料的制备方法和用途
US20120077419A1 (en) * 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)
CN101906359A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种化学机械抛光清洗液
CN101906270A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种化学机械抛光液
SG10201401549SA (en) * 2009-06-22 2014-06-27 Cabot Microelectronics Corp CMP Compositions And Methods For Suppressing Polysilicon Removal Rates
CN102597142B (zh) * 2009-11-13 2014-09-17 巴斯夫欧洲公司 包含无机粒子与聚合物粒子的化学机械抛光(cmp)组合物
JP2011110637A (ja) * 2009-11-25 2011-06-09 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
KR101675378B1 (ko) * 2010-02-25 2016-11-23 삼성전자주식회사 연마 슬러리 및 그를 이용한 절연막 평탄화 방법
JP5648567B2 (ja) * 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
JP5141792B2 (ja) 2010-06-29 2013-02-13 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法
SG10201606566SA (en) 2010-09-08 2016-09-29 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
WO2012032466A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
WO2012032469A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法
US8497210B2 (en) 2010-10-04 2013-07-30 International Business Machines Corporation Shallow trench isolation chemical mechanical planarization
SG191038A1 (en) * 2010-12-06 2013-07-31 Moresco Corp Composition for polishing glass substrate, and polishing slurry
RU2588620C2 (ru) 2010-12-10 2016-07-10 Басф Се Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки на основе оксидкремниевого диэлектрика и на основе поликремния
MY163010A (en) * 2011-01-11 2017-07-31 Cabot Microelectronics Corp Metal-passivating cmp compositions and methods
US8986524B2 (en) 2011-01-28 2015-03-24 International Business Machines Corporation DNA sequence using multiple metal layer structure with different organic coatings forming different transient bondings to DNA
CN102268225B (zh) * 2011-05-30 2014-03-26 上海百兰朵电子科技有限公司 永悬浮钻石研磨液
EP2753670B1 (en) 2011-09-07 2016-06-22 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
EP2568024A1 (en) 2011-09-07 2013-03-13 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
KR101411019B1 (ko) * 2011-12-29 2014-06-24 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
KR101385044B1 (ko) * 2011-12-30 2014-04-15 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
US10029915B2 (en) * 2012-04-04 2018-07-24 International Business Machines Corporation Functionally switchable self-assembled coating compound for controlling translocation of molecule through nanopores
US8778212B2 (en) * 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
JP6088505B2 (ja) * 2012-05-30 2017-03-01 株式会社クラレ 化学機械研磨用スラリーおよび化学機械研磨方法
EP2682440A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8859428B2 (en) 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
EP2914675A4 (en) * 2012-11-02 2016-10-05 L Livermore Nat Security Llc METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY
US9434859B2 (en) * 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9279067B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP6191433B2 (ja) * 2013-12-11 2017-09-06 旭硝子株式会社 研磨剤および研磨方法
US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
CN104073170B (zh) * 2014-06-24 2015-11-18 江苏天恒纳米科技股份有限公司 一种铝合金表面超精密加工专用纳米浆料及其制备方法
KR102464630B1 (ko) * 2014-06-25 2022-11-08 씨엠씨 머티리얼즈, 인코포레이티드 콜로이드성 실리카 화학적-기계적 연마 조성물
JP6435689B2 (ja) 2014-07-25 2018-12-12 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
US9530655B2 (en) * 2014-09-08 2016-12-27 Taiwan Semiconductor Manufacting Company, Ltd. Slurry composition for chemical mechanical polishing of Ge-based materials and devices
CN104263320B (zh) * 2014-09-10 2016-03-02 句容金猴机械研究所有限公司 一种机械设备耐高温研磨剂及其制备方法
JP5893700B1 (ja) 2014-09-26 2016-03-23 花王株式会社 酸化珪素膜用研磨液組成物
JP6656829B2 (ja) 2014-11-07 2020-03-04 株式会社フジミインコーポレーテッド 研磨用組成物
CN104650740B (zh) * 2014-12-10 2017-07-14 深圳市力合材料有限公司 一种可实现快速稳定抛光的抛光液
WO2016115096A1 (en) * 2015-01-12 2016-07-21 Air Products And Chemicals, Inc. Composite abrasive particles for chemical mechanical planarization composition and method of use thereof
US9803107B2 (en) 2015-02-12 2017-10-31 Asahi Glass Company, Limited Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
WO2016132952A1 (ja) * 2015-02-20 2016-08-25 株式会社フジミインコーポレーテッド 研磨用組成物
US10414947B2 (en) 2015-03-05 2019-09-17 Cabot Microelectronics Corporation Polishing composition containing ceria particles and method of use
US9758697B2 (en) 2015-03-05 2017-09-12 Cabot Microelectronics Corporation Polishing composition containing cationic polymer additive
US9505952B2 (en) 2015-03-05 2016-11-29 Cabot Microelectronics Corporation Polishing composition containing ceria abrasive
US10032644B2 (en) * 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
JP6879995B2 (ja) * 2015-07-13 2021-06-02 シーエムシー マテリアルズ，インコーポレイティド 誘電体基板を加工するための方法及び組成物
US10619075B2 (en) * 2015-07-13 2020-04-14 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
US20170066944A1 (en) * 2015-09-03 2017-03-09 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate
US10144850B2 (en) * 2015-09-25 2018-12-04 Versum Materials Us, Llc Stop-on silicon containing layer additive
KR102543680B1 (ko) 2015-12-17 2023-06-16 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
JP6657935B2 (ja) * 2015-12-25 2020-03-04 日立化成株式会社 研磨液
WO2017117404A1 (en) * 2015-12-29 2017-07-06 Cabot Microelectronics Corporation Cmp processing composition comprising alkylamine and cyclodextrin
SG11201900141UA (en) * 2016-08-26 2019-03-28 Ferro Corp Slurry composition and method of selective silica polishing
CN109906257B (zh) 2016-10-17 2021-11-09 Cmc材料股份有限公司 具有改善的凹陷及图案选择性的对氧化物及氮化物有选择性的化学机械抛光组合物
US10570315B2 (en) * 2016-11-08 2020-02-25 Fujimi Incorporated Buffered slurry formulation for cobalt CMP
CN108117840B (zh) * 2016-11-29 2021-09-21 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN108117839B (zh) 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
KR102677797B1 (ko) * 2016-12-22 2024-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
US10286518B2 (en) 2017-01-31 2019-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US9984895B1 (en) 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US20180244955A1 (en) * 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
US10319601B2 (en) * 2017-03-23 2019-06-11 Applied Materials, Inc. Slurry for polishing of integrated circuit packaging
JP6708994B2 (ja) 2017-03-27 2020-06-10 日立化成株式会社 スラリ及び研磨方法
WO2018179061A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
US10106705B1 (en) * 2017-03-29 2018-10-23 Fujifilm Planar Solutions, LLC Polishing compositions and methods of use thereof
JP7132942B2 (ja) * 2017-04-17 2022-09-07 シーエムシー マテリアルズ，インコーポレイティド バルク酸化物の平坦化のための自己停止研磨組成物および方法
CN109251677B (zh) * 2017-07-13 2021-08-13 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251680A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
KR102533083B1 (ko) * 2017-12-18 2023-05-17 주식회사 케이씨텍 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물
KR20190074597A (ko) 2017-12-20 2019-06-28 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
WO2020021680A1 (ja) 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
WO2019181016A1 (ja) 2018-03-22 2019-09-26 日立化成株式会社 研磨液、研磨液セット及び研磨方法
US11643599B2 (en) 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
US11718767B2 (en) * 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
WO2020065723A1 (ja) 2018-09-25 2020-04-02 日立化成株式会社 スラリ及び研磨方法
US20200102475A1 (en) * 2018-09-28 2020-04-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mecahnical polishing composition and method of polishing silcon dioxide over silicon nitiride
US11180678B2 (en) 2018-10-31 2021-11-23 Versum Materials Us, Llc Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
US10988635B2 (en) * 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP
US10759970B2 (en) 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10763119B2 (en) 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
KR102709495B1 (ko) * 2018-12-31 2024-09-25 주식회사 동진쎄미켐 화학-기계적 연마 입자 및 이를 포함하는 연마 슬러리 조성물
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
US20200270479A1 (en) * 2019-02-26 2020-08-27 Versum Materials Us, Llc Shallow Trench Isolation Chemical And Mechanical Polishing Slurry
KR20210148429A (ko) * 2019-04-29 2021-12-07 버슘머트리얼즈 유에스, 엘엘씨 선택적 화학적 기계적 평탄화 연마
CN113632205B (zh) * 2019-06-06 2024-12-20 株式会社力森诺科 研磨液及研磨方法
KR102814738B1 (ko) * 2019-08-06 2025-05-30 삼성디스플레이 주식회사 연마 슬러리, 이를 이용한 표시 장치의 제조방법 및 표시 장치
CN114599750A (zh) * 2019-10-22 2022-06-07 Cmc材料股份有限公司 用于硅氧化物和碳掺杂的硅氧化物的化学机械抛光的组合物及方法
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
JP7409918B2 (ja) * 2020-03-13 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
JP7487507B2 (ja) * 2020-03-23 2024-05-21 株式会社レゾナック 研磨剤及び研磨方法
US11680186B2 (en) 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
KR20220120864A (ko) * 2021-02-24 2022-08-31 에스케이하이닉스 주식회사 실리콘 산화막 연마용 cmp 슬러리 조성물
KR20240031958A (ko) * 2021-05-13 2024-03-08 아라카 인코포레이션 슬러리 제형 및 공정을 사용한 탄화규소(sic) 웨이퍼 연마
KR20230011121A (ko) * 2021-07-13 2023-01-20 주식회사 케이씨텍 신규한 세륨계 입자 및 이를 포함하는 연마 슬러리 조성물
WO2023013059A1 (ja) * 2021-08-06 2023-02-09 昭和電工マテリアルズ株式会社 Ｃｍｐ用研磨液、ｃｍｐ用研磨液セット及び研磨方法
KR102677801B1 (ko) * 2021-10-14 2024-06-25 주식회사 케이씨텍 연마 슬러리 조성물
KR20230063182A (ko) * 2021-11-01 2023-05-09 주식회사 케이씨텍 연마용 슬러리 조성물
KR20240151174A (ko) * 2022-02-07 2024-10-17 아라카 인코포레이션 화학적 기계적 평탄화 슬러리 가공 기술, 및 이를 사용하여 기판을 연마하기 위한 시스템 및 방법
KR20230144386A (ko) 2022-04-07 2023-10-16 삼성전자주식회사 반도체 소자 및 그 제조방법
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法
CN115746711B (zh) * 2022-11-08 2023-07-14 东莞领航电子新材料有限公司 一种铝合金镜面抛光液以及抛光方法
CN115710464A (zh) * 2022-11-11 2023-02-24 博力思(天津)电子科技有限公司 一种低表面粗糙度的氧化硅介质层化学机械抛光液
CN117229717B (zh) * 2023-08-23 2026-03-06 上海集成电路材料研究院有限公司 一种化学机械抛光液及其制备方法和用途
CN117229716B (zh) * 2023-08-23 2026-03-10 上海集成电路材料研究院有限公司 一种含吗啉环水溶性小分子的用途及化学机械抛光液
KR102928760B1 (ko) * 2023-10-10 2026-02-20 주식회사 케이씨텍 표면 개질된 나노 세리아 입자를 포함하는 cmp 슬러리 조성물
CN117683468A (zh) * 2023-11-16 2024-03-12 江苏山水半导体科技有限公司 一种用于sti结构的化学机械抛光液及其制备方法和应用
WO2025141810A1 (ja) * 2023-12-27 2025-07-03 株式会社レゾナック 研磨液及び研磨方法
TW202547985A (zh) * 2024-03-25 2025-12-16 美商恩特葛瑞斯股份有限公司 氧化鈰及異羥肟酸化學機械拋光(cmp)組合物
CN119039991B (zh) * 2024-10-30 2025-06-03 西安蓝桥新能源科技有限公司 一种用于硅片碱刻蚀抛光的添加剂、反应液及方法与应用
CN119432234A (zh) * 2024-10-31 2025-02-14 西北工业大学宁波研究院 一种用于sti技术的氧化铈抛光液及抛光条件
CN121450242A (zh) * 2026-01-04 2026-02-03 珠海基石科技有限公司 平整化组合物及其制备方法、应用、平整化工艺和电子器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
EP1061111A1 (en) * 1998-02-24 2000-12-20 Showa Denko Kabushiki Kaisha Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same
EP1138733A2 (en) * 2000-03-27 2001-10-04 JSR Corporation Aqueous dispersion for chemical mechanical polishing of insulating films

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4462188A (en) 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4867757A (en) 1988-09-09 1989-09-19 Nalco Chemical Company Lapping slurry compositions with improved lap rate
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5460701A (en) 1993-07-27 1995-10-24 Nanophase Technologies Corporation Method of making nanostructured materials
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5763325A (en) * 1995-07-04 1998-06-09 Fujitsu Limited Fabrication process of a semiconductor device using a slurry containing manganese oxide
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US5733176A (en) * 1996-05-24 1998-03-31 Micron Technology, Inc. Polishing pad and method of use
DE69734868T2 (de) * 1996-07-25 2006-08-03 Dupont Air Products Nanomaterials L.L.C., Tempe Zusammensetzung und verfahren zum chemisch-mechanischen polieren
US6132637A (en) * 1996-09-27 2000-10-17 Rodel Holdings, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5968239A (en) * 1996-11-12 1999-10-19 Kabushiki Kaisha Toshiba Polishing slurry
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
DE69830676D1 (de) 1997-01-10 2005-08-04 Texas Instruments Inc CMP Suspension mit hoher Selektivität
EP1011922B1 (en) 1997-04-18 2002-11-06 Cabot Microelectronics Corporation Polishing pad for a semiconductor substrate
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US6322600B1 (en) * 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
JPH10321570A (ja) * 1997-05-15 1998-12-04 Tokuyama Corp 半導体ウェーハポリッシング用研磨剤及びその製造方法、ポリッシング方法
US6168823B1 (en) * 1997-10-09 2001-01-02 Wisconsin Alumni Research Foundation Production of substantially pure kappa casein macropeptide
US6359471B1 (en) 1998-03-09 2002-03-19 Infineon Technologies North America Corp. Mixed swing voltage repeaters for high resistance or high capacitance signal lines and methods therefor
US6114249A (en) * 1998-03-10 2000-09-05 International Business Machines Corporation Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6299659B1 (en) * 1998-08-05 2001-10-09 Showa Denko K.K. Polishing material composition and polishing method for polishing LSI devices
US6863593B1 (en) 1998-11-02 2005-03-08 Applied Materials, Inc. Chemical mechanical polishing a substrate having a filler layer and a stop layer
SG78405A1 (en) * 1998-11-17 2001-02-20 Fujimi Inc Polishing composition and rinsing composition
US6740590B1 (en) 1999-03-18 2004-05-25 Kabushiki Kaisha Toshiba Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing
JP2001007059A (ja) * 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP3957924B2 (ja) * 1999-06-28 2007-08-15 株式会社東芝 Ｃｍｐ研磨方法
US6488730B2 (en) * 1999-07-01 2002-12-03 Cheil Industries, Inc. Polishing composition
TWI227726B (en) * 1999-07-08 2005-02-11 Eternal Chemical Co Ltd Chemical-mechanical abrasive composition and method
JP4555936B2 (ja) 1999-07-21 2010-10-06 日立化成工業株式会社 Ｃｍｐ研磨液
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
TW499471B (en) * 1999-09-01 2002-08-21 Eternal Chemical Co Ltd Chemical mechanical/abrasive composition for semiconductor processing
US6350393B2 (en) 1999-11-04 2002-02-26 Cabot Microelectronics Corporation Use of CsOH in a dielectric CMP slurry
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6468910B1 (en) * 1999-12-08 2002-10-22 Ramanathan Srinivasan Slurry for chemical mechanical polishing silicon dioxide
KR20020086949A (ko) 2000-04-11 2002-11-20 캐보트 마이크로일렉트로닉스 코포레이션 실리콘 옥사이드의 선택적 제거를 위한 시스템
US6593240B1 (en) 2000-06-28 2003-07-15 Infineon Technologies, North America Corp Two step chemical mechanical polishing process
EP1369906B1 (en) 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
JP2002241739A (ja) 2001-02-20 2002-08-28 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
JP2003017447A (ja) 2001-06-28 2003-01-17 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP4972829B2 (ja) 2001-06-28 2012-07-11 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
JP2003017445A (ja) 2001-06-28 2003-01-17 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
EP1061111A1 (en) * 1998-02-24 2000-12-20 Showa Denko Kabushiki Kaisha Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same
EP1138733A2 (en) * 2000-03-27 2001-10-04 JSR Corporation Aqueous dispersion for chemical mechanical polishing of insulating films

Also Published As

Publication number Publication date
KR20120006563A (ko) 2012-01-18
WO2004069947A1 (en) 2004-08-19
CN1742066A (zh) 2006-03-01
US20040152309A1 (en) 2004-08-05
TWI283022B (en) 2007-06-21
US7071105B2 (en) 2006-07-04
KR101281967B1 (ko) 2013-07-03
US8486169B2 (en) 2013-07-16
EP1601735A1 (en) 2005-12-07
US20090029633A1 (en) 2009-01-29
US20060196848A1 (en) 2006-09-07
US7442645B2 (en) 2008-10-28
JP4927526B2 (ja) 2012-05-09
EP1601735B1 (en) 2019-09-11
KR20050098288A (ko) 2005-10-11
US20060144824A1 (en) 2006-07-06
TW200426932A (en) 2004-12-01
JP2006520530A (ja) 2006-09-07

Similar Documents

Publication Publication Date Title
CN1742066B (zh) 抛光含硅电介质的方法
US11674056B2 (en) Polishing compositions containing charged abrasive
CN103080256B (zh) 用于化学机械抛光包含氧化硅电介质和多晶硅膜的衬底的含水抛光组合物和方法
EP2331649B1 (en) Methods and compositions for polishing silicon-containing substrates
JP2006520530A5 (https=)
WO2015019911A1 (ja) Ｃｍｐ用研磨液

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, USA

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, USA

Patentee before: CABOT MICROELECTRONICS Corp.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, America

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, America

Patentee before: CMC Materials Co.,Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20151021