CN1726429A - 调整基底形状的卡盘系统和方法 - Google Patents
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Abstract
本发明涉及一种卡盘系统(40)和调整基底(26)形状的方法,基底具有对置的第一表面(26b)和第二表面(26a)。这是通过在第一对置表面的不同区域之间建立压力差以减轻第二对置表面的结构扭曲而获得,该扭曲是由于基底上的外力负载而发生。为此目的,卡盘系统包括具有对置的第一面和第二面的卡盘体,两面之间延伸侧面。第一面包括隔开距离的第一(58)和第二(60)支承区域。第一支承区域环绕第一(52)和第二(54)凹进处。第二支承区域环绕第二凹进处,其中与第二凹进处重叠的卡盘体的部分对于具有预定波长的辐射是透明的。第二面和侧面限定外部表面。
Description
技术领域
本发明领域一般涉及压印平板印刷。更具体地说,本发明涉及在压印平板印刷过程中减少不良的图案变化。
背景技术
微型制造牵涉到制造非常小的结构,例如具有数量级为微米或更小的特征。微型制造受到可观冲击的区域是在集成电路的过程中。当半导体工业继续努力争取更大的产出而在基底上增加单位面积线路时,微型制造变得越加重要。微型制造可提供更大的工艺控制而容许减少其形成结构的最小特征尺寸。其它曾经采用微型制造的发展领域包括生物技术、光学技术、机械系统等等。
在属于Wilson等人的美国专利No.6,334,960中说明一种示范性微型制造技术。Wilson等披露一种在结构中形成浮雕图像的方法。该方法包括提供具有转移层的基底。转移层覆盖可聚合流体成分。模具与可聚合流体机械接触。模具包括浮雕结构,而可聚合流体成分填满浮雕结构。可聚合流体成分然后经受固化和聚合的条件,在包含与模具互补的浮雕结构的转移层上形成固化的聚合材料。模具然后从固化的聚合材料上分离,而在模具的浮雕结构中形成固化聚合材料的复制件。转移层和固化聚合材料处于有选择地相对与固化聚合材料的转移层蚀刻转移层的环境之中,使转移层上形成浮雕图像。需要的时间和这样技术所提供的最小特征尺寸尤其依赖于可聚合材料的化学成分。
属于Chou的美国专利No.5,772,905披露一种用于在涂于基底上薄膜中建立超细(小于36纳米)图像的平板印刷方法和设备,其中具有至少一个突起特征的模具压在基底所携带的薄膜中。模具中的突起特征在薄膜中建立凹陷。模具从薄膜上移去。薄膜然后如此加工,使凹陷处的薄膜移去而暴露出在下面的基底。如此,模具中图像被薄膜所取代而完成平板印刷。薄膜中图像将在随后的工艺中复制在基底或者附加在基底上的另外材料上。
另外一种压印平板印刷技术由Chou等在“自然”杂志,2002年6月,417期,835-837页,“在硅片上超快速和直接压印纳米结构”中披露,该文涉及激光辅助直接压印工艺(LADI)。在该工艺中基底中一个区域制成可流动的,就是通过激光加热这一区域使其液态化。在该区域达到所要求粘度以后,具有图案的模具被放置与该区域接触。可流动的区域符合图案的轮廓并且然后冷却,将图案固化在基底上。当用这样的方式形成图案时,一个重要问题是如何保持对于模具的控制。在这样方式下,模具的不希望的变形和其它因素所导致的图案的不良变化可以避免。例如,平面内变形可导致线条宽度的变化,以及图案位置的错误。平面外的扭曲可造成光学平板印刷轨迹的损失而导致下面其余各层厚度的变化。这使宽度控制和蚀刻转移均变得困难。
因此希望提供一种改进的技术使模具成型和保持对于形成图案的基底正确地定位。
发明概要
本发明涉及一种调整基底的卡盘系统,能够正确地使模具成型和使其对于利用该模具形成图案的晶片定位。卡盘系统包括具有互相对置的第一和第二面的卡盘体,其中延伸侧面表面。第一面包括隔开的第一和第二凹进处,它们限定隔开距离的第一和第二支承区域。第一支承区域环绕第二支承区域和第一及第二凹进处。第二支承区域环绕第二凹进处,其中与第二凹进处重叠的卡盘体的一部分对于预定波长的辐射透明。该部分从第二面延伸并在接近第二凹近处终结。第二面和和侧面限定外表面。卡盘体包括延伸通过放置第一及第二凹进处的卡盘体的通路,各自与外表面流体连通。在另一实施例中,包括控制系统。第一通路使第一凹进处与压力控制系统流体连通,而第二通路使压力控制系统与第二凹进处流体连通。当装在卡盘体上时,基底依靠在第一和第二支承区域上,覆盖第一及第二凹进处。第一凹进处和与其重叠的基底的部分限定第一室,而第二凹进处和与其重叠的基底的部分限定第二室。压力控制系统的操作控制第一及第二室中的压力。具体地说,在第一室中建立的压力保持基底对于卡盘体的位置。第二室中压力可不同于第一室中压力,尤其减少在压印时在基底上发生的扭曲。
例如,第一室可以抽成真空以保持基底靠在卡盘体上,从而防止基底从卡盘体在重力下脱离。第二室可加压以减少重叠的第二边部分扭曲。在这样方式下,采用流体静压加压而保持基底依靠在卡盘上并补偿施加在基底上的外力,从而防止基底中结构扭曲。本发明的这些和其它实施例将在以下更完整地讨论。为此目的,调整具有相反的第一和第二表面的基底形状的方法包括在第一相对表面的不同区域中建立压力差,以便减轻第二相反表面中的结构扭曲。本发明的这些和其它实施例将在以下更完整地讨论。
附图简要说明
图1为按照本发明的平板印刷系统的立体图;
图2为图1中显示的平板印刷系统简化正面图;
图3为图2中显示压印层在聚合和交叉链接以前所构成的材料的简单表示图;
图4为图3中材料在经受辐射以后转变成的交叉链接材料的简化表示图;
图5为显示在图1中与压印层隔开距离的模具,在压印层图案完成后的简化正面图;
图6为位于图5显示的基底顶面上的附加压印层,在第一压印层中图案转移在其上以后的简化正面图;
图7为图1显示的印刷头的详细立体图;
图8为按照本发明的卡盘系统的剖面图;
图9为图7中显示的压印头的分解图;
图10为图8显示的卡盘体底视平面图;
图11为图2、5及6中显示的在其上面设置压印层的晶片顶视图;
图12为图11细节图,显示模具在一个压印区域中的位置;
图13为按照另一实施例的图8中显示的卡盘体的底视平面图;
图14为按照另一第二实施例的图8中显示的卡盘体的剖面图;
图15为按照本发明说明在利用压印平板印刷技术形成的图案中减少扭曲的方法的流程图;
图16为按照本发明另一实施例说明在利用压印平板印刷技术形成的图案中减少扭曲的方法的流程图。
具体的实施方式
图1描述按照本发明一个实施例的平板印刷系统10,它包括一对隔开距离的桥接支承件12,它具有桥接件14和延伸在其中的平台支承件16。桥接件14和平台支承件16之间隔开距离。联结在桥接件14上的是压印头18。它从桥接件14向平台支承件16延伸。运动平台20设置在平台支承件16上并面向压印头18。运动平台20配置成为可相对于平台支承件16沿X和Y轴线方向运动。辐射源22联接在系统10上以便对运动平台20撞击光化辐射。如图所示,辐射源22联接于桥接件14并且包括连接于辐射源22的发电机23。
参照图1和2,连接于压印头18的是具有模具28在其上的基底26。模具28包括由多个隔开距离的凹进处28a和突出部分28b限定的多个特征,具有纳米数量级的高度h,例如100纳米。多个特征限定将转移到位于运动平台20中的晶片30上的原始图案。为此目的,压印头18适合于沿Z轴线移动并且在模具28和晶片30之间变动距离“d”。在此方式下,模具28上的特征可压印在晶片30的可流动区域上,这将在以下更完全地讨论。辐射源22如此定位,使模具28位于辐射源22和晶片30之间。结果,模具28采用容许使其基本上对于辐射源22所产生的辐射为透明的材料制成。
参照图2和3,诸如压印层34的可流动区域设置在基本上呈现平坦轮廓的表面部分32上。可流动区域可采用任何已知技术形成,诸如在美国专利No.5,772,905中披露的热压纹工艺,该文整体综合在此作为参考,或者由Chou等在“自然”杂志,2002年6月,417期,835-837页,“在硅片上超快速和直接压印纳米结构”中披露的激光辅助直接压印工艺(LADI)。不过,在本实施例中,可流动区域由沉积在晶片30上多个隔开距离的、离散的材料36a的珠子36构成。压印层34从一种可以有选择地聚合和交叉链接而记录原始图案的材料36a形成。在图4中显示的材料36a在标号36b处交叉链接,形成交叉链接聚合材料36c。
参照图2、3和5,记录在压印层34中的图案部分是由于与模具28机械接触而产生。为此目的,压印头18减小距离“d”以便容许压印层34与模具28机械接触,分布珠子36而形成压印层34,其带有在表面32上的材料36a的邻近结构。在一个实施例中,减小距离“d”以便容许压印层34的部分34a进入并且充满凹进处28a。
为促进凹进处28a的填充,材料36a具有要求的性质以便完全填充凹进处28a而用材料36a的邻近结构覆盖表面32。在本实施例中,在所要求的、通常为最小距离“d”已经达到以后,压印层34的部分34b仍旧保留,留下部分34a厚度为t1,而部分34b厚度为t2。厚度“t1”和“t2”可为任何希望的厚度,视其应用而定。典型地厚度t1选择为不大于部分34a宽度u的两倍,即t1≤2u,这在图5清楚地显示。参照图2、3和4,在希望的距离“d”已经达到以后,辐射源22产生可聚合和交叉链接材料36a的光化辐射,形成交叉链接材料36c。结果,压印层34从材料36a转变为固体的材料36c。具体地说,材料36c固化而形成压印层34的边缘,其形状符合模具28的表面28c,如更详细地在图5中所示。在压印层34转变为如图4所示的材料36c以后,图2中所示的压印头18移动以增加距离“d”,使模具28和压印层34隔开距离。
参照图5,可以采用附加的工艺以便完成晶片30上的图案。例如,晶片30和压印层34可以用蚀刻转移压印层34上的图案到晶片30上,提供如图6所示图案表面32a。为促进蚀刻,形成压印层34的材料可以按照需要变动以便限定对于晶片30的相对蚀刻速率。压印层34对于晶片30的相对蚀刻速率可在约1.5∶1到约100∶1之间。可替代地,或除此而外,压印层34可以具有选择性地设置对于光致耐蚀材料(未示)的蚀刻差别。光致耐蚀材料(未示)可以采用已知技术再在压印层34上制作图案。任何蚀刻工艺均可采用,视所希望的蚀刻速率和构成晶片30和压印层34基础成分而定。一种示范性蚀刻工艺可包括等离子蚀刻、反应离子蚀刻、化学湿性蚀刻等等。
参照图1和2,一种示范性辐射源22可产生紫外线辐射。其它诸如热、电磁之类的辐射源也可采用。选择辐射可用来发起在压印层34中材料的聚合化,这对于本行业熟练人士是众所周知并且典型地依赖于要求的特定应用场合。此外,在模具28上多个特征显示为沿平行于突出部分28b方向延伸的凹进处28a,使模具28的剖面呈现为城垛形状。不过,凹进处28a和突出部分28b可对应于实际上任何需要建立集成电路的特征并且可以小到几十分之一纳米。结果,可能要求用热稳定材料制造系统10的部件,例如具有在室温下(即25度摄氏)小于约10ppm(百万分之一)/摄氏度的热膨胀系数。在某些实施例中,构造材料可能具有小于约10ppm/摄氏度的热膨胀系数,或者小于约1ppm/摄氏度。为此,桥接支承件16可用下列材料中的一种或几种制成:碳化硅、在商业名称为“INVAR”或名称为“SUPER INVARTM”下制成的铁合金、陶瓷、包括但不限于“ZERODUR”的陶瓷。此外可以建造工作台24,以便在周围环境中隔离对于系统10中其余部件的振动。加利福尼亚州的Newport Corporationof Irvine可以供应示范性工作台24。
参照图7和8,其上存在模具28的基底26通过包括卡盘体42的卡盘系统40联结到压印头壳体18a。具体地说,基底26包括对置表面26a、26b和延伸在它们之间的周边表面26c。表面26b面向卡盘系统40,而模具28从表面26a延伸。为确保流体不致从图2所示珠子36分布到模具28区域以外,图8中所示的模具28表面28c从基底26的表面26a隔开其数量级为微米(例如15微米)的距离。在压印头壳体18a上联结校准系统18b,而卡盘体42面对面地通过挠曲系统18c联结基底26到校准系统18b。如图5所示,校准系统18b促进基底26和晶片30之间的正确对准方位,从而基本上在其间获得均匀的空隙距离“d”。
参照图7和9,校准系统18b包括多个执行器19a、19b及19c和底板19d。具体地说,执行器19a、19b及19c在壳体18a和底板19d之间联结。挠曲系统18c包括挠曲弹簧21a和挠曲环21b。挠曲环21b联结在底板19d和挠曲弹簧21a之间。执行器19a、19b及19c的运动确定挠曲环21b的方位,如此可容许挠曲弹簧21a的粗校准,因此也包括卡盘体42和基底26的校准。执行器19a、19b及19c也促进挠曲环21b移动到Z-轴线。挠曲弹簧21a包括多个线性弹簧,它们在X-Y平面中促进万向节状态的运动,如图2所示,使其在晶片30和基底26之间获得正确的对准方位。
参照图8和10,卡盘体42适合于利用真空技术保持在其上面附着模具28的基底26。为此,卡盘体42包括对置的第一和第二面46及48。侧面或边缘表面50延伸在第一面46和第二面48之间。第一面46包括第一凹进处52和与第一凹进处52隔开距离的第二凹进处54,限定隔开距离的第一及第二支承区域58及60。第一支承区域58环绕第二支承区域60和第一凹进处及第二凹进处52、54。第二支承区域60环绕第二凹进处54。与第二凹进处54重叠的卡盘体42的部分62对于具有预定波长的辐射、诸如以上述及的光化学辐射波长是透明的。为此,部分62用诸如玻璃的透明材料薄层制成。不过,部分62采用的材料可视图2中所示辐射源22产生的辐射波长而定。部分62从第二面48延伸而终止于接近第二凹进处54并且应该限定至少与模具28同样大小面积,使模具可以在此重叠。在卡盘体42中形成一条或多条显示为标号64和66的通路。通路之一,诸如通路64,使第一凹进处52与侧面50流体连通。其余的通路,诸如通路66,使第二凹进处54与侧面50流体连通。
应该理解,通路64同样可以在第二面48和第一凹进处53之间延伸。相似地,通路66可以在第二面48和第二凹进处54之间延伸。所要求的是通路64及66可促使凹进处52及54各自与诸如泵系统70的压力控制系统流体流通。
泵系统70可包括一台或多台泵,以便控制互相独立的凹进处52及54附近的压力。具体地说,当装在卡盘体42上时,基底26依靠在第一和第二支承区域58、60上,覆盖第一和第二凹进处52、54。第一凹进处52和在此重叠的基底26的部分44a限定第一室52a。第二凹进处54和在此重叠的基底26的部分44b限定第二室54a。泵系统70的运行控制第一室52a和第二室54a中压力。
例如,可以在第一室52a中建立压力以维持基底26对于卡盘体42的位置并且减少(如果不是避免)基底26在重力g下从卡盘体42上的分离。在第二室54a中压力可不同于第一室52a中的压力,以减少由模具28上的特征在压印时发生的图案中的表面扭曲。例如表面扭曲可能由于顶压模具28的向上压力R,如图2所示,这是由于压印层34接触模具28而发生。如图8所示,通过调整基底26的形状,图案中表面扭曲可以减轻(如果不是避免)。例如,泵系统70可在室54a中施加正压力而抵消力R。这在面46的不同区域中产生压力差,使基底26弓曲因此在力R下的模具28受到控制或减轻,给基底26(因此模具28)提供所希望的预定形状。基底26和模具28可采取的示范性形状包括椭圆形、弧形、平面形、抛物线形、马鞍形等等。
参照图2和8,压印头18可包括探测模具28在压印工艺中所承受力R的幅度的压力传感器18d。由传感器产生的信息被传递到在数据通讯中的处理器71。响应从传感器18d获得的信息,处理器71可控制泵系统70而在室52a及54a中建立压力抵消力R,使基底(因此模具28)具有所希望的预定形状。
在室52a及54a中的压力可根据事先从过去压印工艺中用压力传感器18d探测到的力R而设定。结果,在室52a及54a中的压力可在模具28和压印层34之间接触以前或以后建立,以便保证基底26(因此模具28)具有所希望的预定形状。在有些情况中,在压印工艺中,可能希望在即时或动态地对室54a加压。例如,可能在模具26接触压印层34以后,在室54a中建立压力以正确地按要求使基底成型比较有利。在室54a中建立的、以便基底26(因此模具28)获得所希望的预定形状的正压力可能大于在室52a中建立的真空压力。这将造成基底从卡盘体42上脱离。
为在压印中保持卡盘体42和基底26之间的相对位置,可以在模具28接触压印层34以后,动态地在室54a中建立压力。在如此方式下,力R和室52a中真空压力二者一起保证面对室54a中的正压力维持卡盘体42和基底26之间的相对位置。在模具28在压印层34中压印图案后,在室54a中的压力可调整到在其中建立真空。在如此方式下,所有室52a及54a具有真空以促进模具从压印层34分离,而同时维持卡盘体42和基底26之间的相对位置。
联结在基底26上的压缩装置在X和Y方向上压缩基底,其中Y为进入图8所在平面的方向。在本例子中,压缩装置包括具有一个或多个气囊并且包围周边表面26c的流体密封气囊系统,其中两个气囊72a和72b显示为沿Y轴线延伸,而为清晰起见沿周边表面X轴线延伸的气囊没有显示,但是包括在本发明之中。可以附加采用其它能够压缩基底26的装置,或者代替气囊系统,诸如老虎钳或其功能相似老虎钳的压电执行器。气囊72a和72b与泵系统70流体连通以控制气囊72a和72b中流体压力。在如此方式下,气囊72a和72b可用来对基底26施加力量以变化基底的尺寸并减少如图2所示记录在压印层34上的图案的表面扭曲。
在记录在压印层34的图案中表面扭曲可能(尤其)由于压印层34和晶片30的尺寸变化引起。这些尺寸变化,也可能部分地由于热波动,以及以前处理步骤中产生的误差,这些一般称作扩大/出界误差。此外,当记录原始图案晶片30的区域面积小于图案面积时,就发生扩大/出界误差。当形成多层压印图案时,扩大/出界误差的有害效果就加剧,显示为压印层124与图案表面32a重叠,如图6所示。无论是在单步骤的全晶片压印还是分步重复的压印工艺中,面对扩大/出界误差在两个重叠图案之间正确对准是困难的。
参照图11和12,分步重复过程包括限定多个区域,在将记录模具28中原始图案的晶片30上显示为a-1。模具28中原始图案可与模具28整个表面共同延伸,或简单地定位在其一部分上。本发明将讨论对于与面向晶片30的模具28表面共同延伸的原始图案,但应该理解,基底26具有大于各区域a-1的面积。正确执行分步重复过程可包括模具28与各区域a-1正确对准。为此目的,模具28包括对准标记114a,显示为“+”符号。通过确定对准标记114a正确地与基准标记110a对准,可保证模具28与区域a-1之一的重叠正确对准。为此目的,可以采用机器视觉装置(未示)以感受对准标记114a和基准标记110a之间的相对对准。在本例子中,在对准标记114a与基准标记110a重叠以后指示出正确对准。随着扩大/出界误差的进入,正确对准变得非常困难。
不过,按照本发明一个实施例,通过在模具28和晶片之间建立相对尺寸变化可减少(如果不是消除)扩大/出界误差。具体地说,晶片30的温度如此变化,使区域a-1中之一限定一个少许小于模具28上原始图案的面积。此后,扩大/出界误差的最后补偿通过使基底26(如图8显示)承受利用气囊72a和72b的机械压缩压力而获得,该压缩力如图12中箭头F1和F2所示又传递到模具28(F1和F2为互相横向设置)。在如此方式下,原始图案成为与其重叠的区域a-1面积共同延伸。
参照图5和8,不过,使基底26承受压缩力是通过弯曲作用调整其形状。基底26的弯曲可在压印入压印层34中的图案引入扭曲。由于基底26弯曲而造成的图案扭曲可以通过气囊72a和72b的设置,控制基底26的弯曲使其发生在要求的方向上而减轻(如果不是防止)。在本例子中,气囊72a和72b定位成为压缩基底26,使其沿平行于而相反于力R的方向弓曲。通过以如此方式控制基底26的弯曲,卡盘系统40可用来补偿弯曲力B,使模具28获得所要求的预定形状,例如弧形、平坦等等。泵系统70可用来为此目的在室54a中适当地加压。例如,假定弯曲力B大于力R,泵系统70将用来使室54a抽成足够的真空以抵消弯曲力B。如果弯曲力B弱于力R,泵系统70将用来使室54a适当地加压使模具保持平坦,或任何其它要求的形状。正确的压力水平可以用事先对于力R及B的认识决定,而力R及B然后由包括在泵系统中的处理器71分析,以便对室52a及54a加压到适当水平。还有,力R及B可以利用已知技术动态地感受,诸如以上讨论的压力传感器18d和处理器71,使室52a及54a内的压力可以动态地在运行中建立保持基底26处于所要求的形状。弯曲力的幅度依赖于许多因素,诸如周边表面26c的形状,例如周边表面26c是否正交地对于第一及第二表面26a和26b延伸或者与其形成直角,以及在周边表面26c上气囊72a和72b施加力的位置,和(如图2所示)珠子36在表面32上的图案。施加单独压缩力的装置显示在周边表面的对面区域上,诸如气囊72a和72b。应该理解,可以在周边表面26c的对面区域上施加多个压缩力,显示为力F3、F4、F5和F6。力F3、F4、F5和F6可以是完全相同或者按照需要为不同幅度,以便对基底26提供所要求的预定形状。附加的好处是室52a和54a之一或二者中压力可以建立为正压,从而有利于从卡盘体42上脱卸基底26。这也可以在处理器控制下完成,或者用手动。
再回到图8,当用气囊72a和72b压缩基底26时,基底26和支承区域58及60之间沿X和Y轴线发生相对移动。结果,要求支承区域58和60各自具有从适合于符合所述基底26轮廓和抵抗沿X和Y轴线变形材料制成的表面区域58a和60a。在如此方式下,表面区域58a和60a在X和Y轴线方向上相对于卡盘体42抵抗基底26的相对移动。
参照图8和13,在另一实施例中,卡盘体142可包括显示为标号142a、142b、142c及142d的壁部或隔板,在第一和第二支承区域158和160之间延伸。在如此模式下,壁部/隔板142a、142b、142c及142d段凹入在多个小区域152a、152b、152c及152d中,一旦基底26重叠放置在其上面这些小区域的功能成为小室。小室152a、152b、152c及152d为流体密封,导致各小室具有与泵系统70流体连通的通路(未示)。交替地,或者协同地,小室152a、152b、152c及152d也可当基底26重叠放置在其上面时不形成流体密封室。宁可使壁部142a、142b、142c及142d与基底26隔开距离以提供对于流体跨越隔板转移的功能。结果,在泵系统70对凹进处152提供适当压力水平时,在小室152a、152b、152c及152d之间可按要求提供压力差。在相似模式中,如果需要,显示为标号142e的一个或多个隔板可以设置在支承区域160的对面范围之间延伸以便形成小室154a和154b。
参照图2和13,如果设置壁部/隔板142a、142b、142c及142d,可以同时设置具有不同压力差的小区域152a、152b、152c及152d。结果,当从压印层34拉开分离时施加在基底26上的力量大小可沿基底26表面变化。这使基底26悬臂弯曲,或者基底26从压印层34剥离,如此在基底26在此分离时减少在压印层34中形成的扭曲或缺陷。例如,小室152b可具有在其中建立的压力大于其余小室152a、152c及152d中相关的压力。结果,当增加距离“d”时基底26与小室152a、152c及152d重叠部分承受的拉力大于基底26与小室152b重叠部分承受的拉力。如此,基底26与小室152a、152c及152d重叠部分中“d”距离增加的速率比较基底26与小室152b重叠部分中“d”距离增加的速率相比较是加速,提供上述悬臂效应。
在显示在图14中还有另一实施例中,卡盘体242包括多个从凹进处252最低表面252a突出的销子242a。销子242a为通过真空保持在卡盘体242上的晶片(未示)提供机械支承。这使支承区域258和260各自具有表面区域258a和260a,它们由与依靠在支承区域258和260的晶片(未示)表面(未示)完全顺应的材料制成。在如此方式下,表面区域258a和260a在存在极端表面变化下提供对于晶片(未示)的流体密封,例如当晶片(未示)表面(未示)和表面区域258a及260a之间存在颗粒状物质时。晶片(未示)在Z方向的机械支承不需要由表面区域258a和260a提供。销子242a提供这一支承。为此目的,销子242a为典型的具有圆形截面的刚性立柱。
参照图11、12和15,在运行中,在步骤200时对于晶片30在X-Y平面中正确地进行测量。这可以通过利用机器视觉装置(未示)和已知的信号处理技术感受在晶片30上存在基准110b的粗略对准而获得。在步骤202,晶片30的温度可能变化,即提高或降低,使区域a-1之一面积少许小于模具28上原始图案的面积。温度变化可以利用晶片30依靠的温度控制卡盘或底座(未示)获得。各区域a-1面积可以通过测量两个同一直线上粗略对准基准110b之间的距离的变动而决定。
具体地说,在沿X或Y轴线之一的同直线上两粗略对准基准110b之间距离的变化得到确定。此后,该距离变化除以邻近区域a-1在晶片30上沿X-轴线的数量。这提供由于在晶片30上沿X-轴线尺寸变化而引起区域a-1面积的尺寸变化。如果必要,也可进行同样的测量决定由于晶片30上沿Y-轴线尺寸变化而引起的区域a-1面积的变化。不过,也可以假定晶片30上尺寸变化在两正交轴线X及Y上是均匀的。
在步骤204,对于模具28施加压缩力F1和F2,以便使原始图案的面积与区域a-1之一与图案重叠的面积共同延伸。这可以在实时中应用机器视觉装置(未示)和已知信号处理技术获得,以便确定何时两个或更多对准标记对准基准标记110a。在步骤206,在获得正确对准并且扩大/出界误差减少以后(如果不是损害),原始图案记录在与模具28重叠的区域a-1中,形成记录下的图案。压缩力F1和F2不一定具有同样的幅度,由于无论在晶片30还是模具28中的尺寸变化不一定在所有方向均匀。还有,扩大/出界误差不一定在X-Y方向均完全相同。结果,压缩力F1和F2可以不同以便补偿这些异常情况。还有,为保证更多地减少扩大/出界误差,如图6所示,可以在模具28接触压印层124后在模具28中进行尺寸变化。不过,这不是必要的。
重新回到图6、11和12,模具28与区域a-1的对准并与其重叠可以在模具28与压印层124隔开距离时发生。如果发现扩大/出界误差在整个晶片区域上均为常数,则F1和F2力的幅度可以在各记录原始图案的区域a-1中保持不变。不过,如果确定扩大/出界误差在一个或多个区域a-1中不同,如图15所示,将对于记录原始图案的各区域a-1采取步骤202和204。应该注意,在晶片30和模具28之间发生的尺寸相对变化是有限的。例如,区域a-1的面积应该有适当的尺寸,以便当模具承受压缩压力F1和F2时使模具28上图案限定在此共同延伸的面积,而不顾及模具28的结构整体性。
参照图5和16,按照本发明另一实施例,晶片30在X-Y平面中精确的测量在步骤300中采取。在步骤302,与模具28重叠的区域a-1之一的尺寸可以确定。在步骤304中确定与摸具28重叠的区域a-1之一的面是否大于模具28上图案的面积。如果情况如此,过程进行到步骤306,否则过程进行到步骤308。在步骤308,模具28放置成为与在此重叠的区域a-1接触,并确定压缩力F1和F2的要求幅度并施加在模具28上以便保证图案的面积与该区域a-1面积共同延伸。此后,模具从与模具28重叠的区域a-1上隔开距离而过程进行到步骤312,在该步骤中确定在记录原始图案的晶片30上是否保留任何区域a-1。如果有这样的区域,过程进行到步骤314,其中模具被放置在下一区域上重叠而过程进行到步骤304。否则,过程终止在步骤316。
如果在步骤304确定与模具28重叠的区域a-1具有大于图案的面积,则过程进行到步骤306,其中模具28的温度被变动以促使其膨胀。在本实施例中,模具28在步骤306被加热,使图案少许大于在此重叠的区域a-1面积。然后过程在步骤310继续进行。
以上描述的本发明实施例是示范性的。可以对以上披露作出许多变型,而仍保持在本发明范围内。例如,通过使所有由卡盘体-基底组合形成腔室用正流体压力加压,基底可以迅速地从卡盘体释放。还有,以上讨论的许多实施例可在当前存在的、不采用沉积可聚合材料的珠子形成压印层的压印平板印刷工艺中实施。可以采用本发明中不同实施例的示范性例子包括在美国专利No.5,772,905中披露的热压纹工艺,其全部内容综合在此作为参考。此外,本发明许多实施例可以利用激光辅助直接压印(LADI)工艺,其形式由Chou等在“自然”杂志,2002年6月,417期,835-837页,“在硅片上超快速和直接压印纳米结构”中描述。因此,本发明范围不应该参照上述描述决定,而应该参照所附权利要求以及其相等条款的全部范围决定。
权利要求书
(按照条约第19条的修改)
在PCT条款19(1)下的声明
PCT/US03/3610
所提交的修改如以上所示地修改权利要求12,而权利要求1-11和13-19未改。
权利要求12经过修改突出通过在第二对置面减轻结构扭曲而调整基底形状方法的特征,基底具有与压印层隔开距离的第一和第二对置表面,其中结构扭曲随压印层而变化。这是通过提供设置在限定第一和第二室的基底邻近的卡盘而获得,其中第一和第二室具有各自限定在其中的第一和第二压力。第一和第二压力可以如此限定,使任何施加在基底上的表面扭曲可以减少。这些特征是传统工艺所缺少的。
9.如权利要求1中所述卡盘系统,其特征在于,还包括提供附加通路,所述通路和所述附加通路使各所述第一和第二凹进处与所述外部表面之一流体连通,并包括与所述通路和所述附加通路均流体连通的压力控制系统,其中所述基底依靠在所述第一和第二支承区域上,并覆盖所述第一和第二凹进处,而所述第一凹进处和与其重叠的所述基底的部分限定第一室,并且所述第二凹进处和与其重叠的所述基底的部分限定第二室,其中所述压力控制系统运行而在所述第一和第二室之间建立压力差。
10.如权利要求1中所述卡盘系统,其特征在于,还包括提供附加通路,所述通路和所述附加通路使各所述第一和第二凹进处与所述外部表面之一流体连通,并包括与所述通路和所述附加通路均流体连通的压力控制系统,和联结而弯曲所述基底以便弯曲其对置的两面的装置,其中所述基底依靠在所述第一和第二支承区域上,并覆盖所述第一和第二凹进处,而所述第一凹进处和与其重叠的所述基底的部分限定第一室,并且所述第二凹进处和与其重叠的所述基底的部分限定第二室,其中所述压力控制系统运行以控制所述第二室中压力,以便调整所述第二部分曲率。
11.如权利要求1中所述卡盘系统,其特征在于,还包括设置在所述第二凹进处的壁部,它们延伸在所述第一和第二支承区域之间,以便分隔所述第一凹进处成为多个小室,和与所述通路流体连通的压力控制系统,其中所述基底依靠在所述第一和第二支承区域上,并覆盖所述第一和第二凹进处,而所述第一凹进处和与其重叠的所述基底的部分限定第一室,并且所述第二凹进处和与其重叠的所述基底的部分限定第二室,其中所述压力控制系统运行以控制所述多个小室中的压力而在其间建立压力差。
12.一种调整基底形状的方法,基底具有对置的第一和第二表面,与压印层隔开距离,所述方法包括:
在所述第一对置表面的不同区域之间建立压力差,以减轻在所述第二对置表面中的结构扭曲,其中所述结构扭曲随所述压印层而变化。
13.如权利要求12中所述方法,其特征在于,包括使所述区域中第一小区承受拉力,而使所述区域中第二小区承受推力,以使所述第二对置表面的小部分具有所要求的预定形状。
14.如权利要求12中所述方法,其特征在于,还包括使所述区域的第一小区承受基本上大于与所述不同区域的剩余区域相关的拉力的拉力,其中所述第一小区
Claims (19)
1.一种保持基底的卡盘系统,所述卡盘系统包括:
卡盘体,具有对置的第一和第二面,其间延伸边缘表面,所述第一面包括隔开距离的第一和第二凹进处,它们限定隔开距离的第一和第二支承区域,其中所述第一支承区域环绕所述第二支承区域和所述第一及第二凹进处,而所述第二支承区域环绕第二凹进处,其中与所述第二凹进处重叠的所述卡盘体的一部分对于具有预定波长的辐射透明,所述部分从所述第二面延伸而在所述第二凹进处附近终止,所述第二面和所述边缘表面限定外部表面,其中所述卡盘体包括延伸通过所述卡盘体的通路,使所述第一和第二凹进处之一与所外部表面之一流体连通。
2.如权利要求1中所述卡盘系统,其特征在于,各所述第一和第二支承区域具有相关支承表面,背离所述第二面,其中所述支承表面由适合于符合所述基底轮廓的材料形成。
3.如权利要求1中所述卡盘系统,其特征在于,所述第一凹进处包括多个从此延伸的、隔开距离的销子。
4.如权利要求1中所述卡盘系统,其特征在于,各所述第一和第二支承区域具有相关的支承表面,背离所述第二面,其中所述支承表面由顺应的材料沿在对置的所述第一面和第二面之间延伸的第一方向制成,以便符合所述基底轮廓而对抗沿横向所述第一方向的方向的运动。
5.如权利要求1中所述卡盘系统,其特征在于,还包括设置在所述第二凹进处的壁部,它们延伸在所述第一和第二支承区域之间,以便分隔所述第一凹进处成为多个小室。
6.如权利要求1中所述卡盘系统,其特征在于,所述第一支承区域与所述第二支承区域同心,并且具有从一组包含环形、多角形和圆形的形状中选出的形状。
7.如权利要求1中所述卡盘系统,其特征在于,还包括联结而弯曲所述基底的装置,以便弯曲所述对置的第一面和第二面的形状。
8.如权利要求1中所述卡盘系统,其特征在于,还包括与所述通路流体连通的压力控制装置,其中所述基底依靠在所述第一和第二支承区域,覆盖所述第一和第二凹进处,而所述第一凹进处和与其重叠的所述基底的部分限定第一室,并且所述第二凹进处和与其重叠的所述基底的部分限定第二室,其中所述压力控制系统运行以控制所述第一和第二室之一中的压力。
9.如权利要求1中所述卡盘系统,其特征在于,还包括提供附加通路,所述通路和所述附加通路使各所述第一和第二凹进处与所述外部表面之一流体连通,并包括与所述通路和所述附加通路均流体连通的压力控制系统,其中所述基底依靠在所述第一和第二支承区域上,并覆盖所述第一和第二凹进处,而所述第一凹进处和与其重叠的所述基底的部分限定第一室,并且所述第二凹进处和与其重叠的所述基底的部分限定第二室,其中所述压力控制系统运行而在所述第一和第二室之间建立压力差。
10.如权利要求1中所述卡盘系统,其特征在于,还包括提供附加通路,所述通路和所述附加通路使各所述第一和第二凹进处与所述外部表面之一流体连通,并包括与所述通路和所述附加通路均流体连通的压力控制系统,和联结而弯曲所述基底以便弯曲其对置的两面的装置,其中所述基底依靠在所述第一和第二支承区域上,并覆盖所述第一和第二凹进处,而所述第一凹进处和与其重叠的所述基底的部分限定第一室,并且所述第二凹进处和与其重叠的所述基底的部分限定第二室,其中所述压力控制系统运行以控制所述第二室中压力,以便调整所述第二部分曲率。
11.如权利要求1中所述卡盘系统,其特征在于,还包括设置在所述第二凹进处的壁部,它们延伸在所述第一和第二支承区域之间,以便分隔所述第一凹进处成为多个小室,和与所述通路流体连通的压力控制系统,其中所述基底依靠在所述第一和第二支承区域上,并覆盖所述第一和第二凹进处,而所述第一凹进处和与其重叠的所述基底的部分限定第一室,并且所述第二凹进处和与其重叠的所述基底的部分限定第二室,其中所述压力控制系统运行以控制所述多个小室中的压力而在其间建立压力差。
12.一种调整基底形状的方法,基底具有对置的第一和第二表面,所述方法包括:
在所述第一对置表面的不同区域之间建立压力差,以减轻在所述第二对置表面中的结构扭曲。
13.如权利要求12中所述方法,其特征在于,包括使所述区域中第一小区承受拉力,而使所述区域中第二小区承受推力,以使所述第二对置表面的小部分具有所要求的预定形状。
14.如权利要求12中所述方法,其特征在于,还包括使所述区域的第一小区承受基本上大于与所述不同区域的剩余区域相关的拉力的拉力,其中所述第一小区邻近并且位于所述基底周边附近。
15.如权利要求12中所述方法,其特征在于,还包括对所述基底施加改变其尺寸以诱发弯曲作用的压缩力,其中还包括建立拉力以减轻所述弯曲作用并且维持所述第二面的所述部分要求的预定形状。
16.如权利要求12中所述方法,其特征在于,还包括第一所述不同区域环绕第二所述不同区域,其中所述第一区域具有施加在其上的拉力和所述第二区域具有存在其中的推力。
17.如权利要求12中所述方法,其特征在于,建立压力差还包括通过变化所述压力差以补偿在所述第二表面上的外部压力而减轻在所述第二对置表面上的结构扭曲。
18.如权利要求12中所述方法,其特征在于,还包括对所述第二表面提供具有图案的模具,和在其上面设置压印层的晶片,该压印层面向所述图案并且所述压印层接触所述模具,其中还包括提供具有第一和第二对置面的卡盘体,在两对置面之间延伸的边缘表面,所述第一面包括限定隔开距离的第一和第二支承区域的隔开距离的第一和第二凹进处,所述基底依靠在所述第一和第二支承区域,覆盖所述第一和第二凹进处,其中所述第一凹进处和所述基底与其重叠的部分限定第一室,而第二凹进处和所述基底与其重叠的部分限定第二室,其中所述压力差通过在所述第一和第二室内建立不同压力水平而形成,并且还包括在所述压印层接触所述模具以后在所述第二室内建立正压力。
19.如权利要求18中所述方法,其特征在于,还包括从所述压印层分离所述模具,和在从所述压印层分离模具以前对所述第二室抽真空。
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Also Published As
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US20040090611A1 (en) | 2004-05-13 |
US6982783B2 (en) | 2006-01-03 |
US7019819B2 (en) | 2006-03-28 |
US7224443B2 (en) | 2007-05-29 |
US7691313B2 (en) | 2010-04-06 |
US20100143521A1 (en) | 2010-06-10 |
US20040223131A1 (en) | 2004-11-11 |
CN1726429B (zh) | 2010-10-13 |
US20060176466A1 (en) | 2006-08-10 |
US20070114686A1 (en) | 2007-05-24 |
US8282383B2 (en) | 2012-10-09 |
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