CN1469488A - 半导体器件及其制备方法 - Google Patents
半导体器件及其制备方法 Download PDFInfo
- Publication number
- CN1469488A CN1469488A CNA031428924A CN03142892A CN1469488A CN 1469488 A CN1469488 A CN 1469488A CN A031428924 A CNA031428924 A CN A031428924A CN 03142892 A CN03142892 A CN 03142892A CN 1469488 A CN1469488 A CN 1469488A
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- impurity
- ion
- injects
- inject
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 101
- 238000000034 method Methods 0.000 title claims description 11
- 239000012535 impurity Substances 0.000 claims abstract description 64
- 239000000126 substance Substances 0.000 claims abstract description 53
- 238000009792 diffusion process Methods 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 66
- 230000002401 inhibitory effect Effects 0.000 claims description 52
- 238000002347 injection Methods 0.000 claims description 40
- 239000007924 injection Substances 0.000 claims description 40
- 238000009826 distribution Methods 0.000 claims description 35
- 238000002360 preparation method Methods 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 180
- 230000001133 acceleration Effects 0.000 description 45
- 229940090044 injection Drugs 0.000 description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 33
- 239000010410 layer Substances 0.000 description 26
- 238000005516 engineering process Methods 0.000 description 23
- 238000001259 photo etching Methods 0.000 description 18
- 238000012545 processing Methods 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 16
- 238000000137 annealing Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000002955 isolation Methods 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 229910052785 arsenic Inorganic materials 0.000 description 10
- 230000006872 improvement Effects 0.000 description 10
- 238000004151 rapid thermal annealing Methods 0.000 description 10
- 238000004380 ashing Methods 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 229910052787 antimony Inorganic materials 0.000 description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000005764 inhibitory process Effects 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 238000005280 amorphization Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M15/00—Arrangements for metering, time-control or time indication ; Metering, charging or billing arrangements for voice wireline or wireless communications, e.g. VoIP
- H04M15/80—Rating or billing plans; Tariff determination aspects
- H04M15/8016—Rating or billing plans; Tariff determination aspects based on quality of service [QoS]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M15/00—Arrangements for metering, time-control or time indication ; Metering, charging or billing arrangements for voice wireline or wireless communications, e.g. VoIP
- H04M15/81—Dynamic pricing, e.g. change of tariff during call
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W4/00—Services specially adapted for wireless communication networks; Facilities therefor
- H04W4/24—Accounting or billing
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M2215/00—Metering arrangements; Time controlling arrangements; Time indicating arrangements
- H04M2215/01—Details of billing arrangements
- H04M2215/0112—Dynamic pricing, e.g. change of tariff during call
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M2215/00—Metering arrangements; Time controlling arrangements; Time indicating arrangements
- H04M2215/20—Technology dependant metering
- H04M2215/2026—Wireless network, e.g. GSM, PCS, TACS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M2215/00—Metering arrangements; Time controlling arrangements; Time indicating arrangements
- H04M2215/22—Bandwidth or usage-sensitve billing
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M2215/00—Metering arrangements; Time controlling arrangements; Time indicating arrangements
- H04M2215/32—Involving wireless systems
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M2215/00—Metering arrangements; Time controlling arrangements; Time indicating arrangements
- H04M2215/74—Rating aspects, e.g. rating parameters or tariff determination apects
- H04M2215/7414—QoS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Signal Processing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Business, Economics & Management (AREA)
- Accounting & Taxation (AREA)
- Quality & Reliability (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002183055 | 2002-06-24 | ||
JP183055/2002 | 2002-06-24 | ||
JP355884/2002 | 2002-12-06 | ||
JP2002355884 | 2002-12-06 | ||
JP168799/2003 | 2003-06-13 | ||
JP2003168799A JP4236992B2 (ja) | 2002-06-24 | 2003-06-13 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1469488A true CN1469488A (zh) | 2004-01-21 |
CN1291500C CN1291500C (zh) | 2006-12-20 |
Family
ID=30003585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031428924A Expired - Fee Related CN1291500C (zh) | 2002-06-24 | 2003-06-24 | 半导体器件及其制备方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6977417B2 (zh) |
JP (1) | JP4236992B2 (zh) |
KR (1) | KR100936413B1 (zh) |
CN (1) | CN1291500C (zh) |
TW (1) | TWI222177B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100426527C (zh) * | 2004-05-24 | 2008-10-15 | 三星Sdi株式会社 | 薄膜晶体管衬底和其制造方法 |
CN102194748A (zh) * | 2010-03-15 | 2011-09-21 | 北京大学 | 半导体器件及其制造方法 |
CN102738000A (zh) * | 2011-04-12 | 2012-10-17 | 中芯国际集成电路制造(上海)有限公司 | 一种超浅结形成方法 |
CN109473357A (zh) * | 2018-10-29 | 2019-03-15 | 上海华力集成电路制造有限公司 | Mos晶体管的制造方法 |
CN111883422A (zh) * | 2020-07-16 | 2020-11-03 | 上海华虹宏力半导体制造有限公司 | 超级结器件的制作方法 |
CN114812877A (zh) * | 2021-01-27 | 2022-07-29 | 英飞凌科技股份有限公司 | 应力传感器和用于求取梯度补偿的机械应力分量的方法 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100588786B1 (ko) * | 2003-09-18 | 2006-06-12 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조방법 |
JP2005277024A (ja) * | 2004-03-24 | 2005-10-06 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US20050247976A1 (en) * | 2004-05-06 | 2005-11-10 | Ting Steve M | Notched spacer for CMOS transistors |
JP2006013284A (ja) * | 2004-06-29 | 2006-01-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2006173438A (ja) * | 2004-12-17 | 2006-06-29 | Yamaha Corp | Mos型半導体装置の製法 |
JP5135743B2 (ja) * | 2005-09-28 | 2013-02-06 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US20070072382A1 (en) * | 2005-09-28 | 2007-03-29 | Fujitsu Limited | Method of manufacturing semiconductor device |
JP5283827B2 (ja) | 2006-03-30 | 2013-09-04 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5034332B2 (ja) | 2006-06-14 | 2012-09-26 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5343320B2 (ja) * | 2007-03-02 | 2013-11-13 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7858505B2 (en) * | 2007-05-04 | 2010-12-28 | Freescale Semiconductor, Inc. | Method of forming a transistor having multiple types of Schottky junctions |
DE102007035838B4 (de) * | 2007-07-31 | 2014-12-18 | Advanced Micro Devices, Inc. | Verfahren zum Ausbilden einer Halbleiterstruktur mit einer Implantation von Stickstoffionen |
JP5303881B2 (ja) | 2007-08-15 | 2013-10-02 | 富士通セミコンダクター株式会社 | 電界効果トランジスタ及び電界効果トランジスタの製造方法 |
JP2009182089A (ja) * | 2008-01-30 | 2009-08-13 | Panasonic Corp | 半導体装置の製造方法 |
JP5235486B2 (ja) | 2008-05-07 | 2013-07-10 | パナソニック株式会社 | 半導体装置 |
US7994051B2 (en) * | 2008-10-17 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Implantation method for reducing threshold voltage for high-K metal gate device |
JP2011009571A (ja) * | 2009-06-26 | 2011-01-13 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP5652939B2 (ja) * | 2010-07-07 | 2015-01-14 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5640526B2 (ja) * | 2010-07-28 | 2014-12-17 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US8659054B2 (en) * | 2010-10-15 | 2014-02-25 | International Business Machines Corporation | Method and structure for pFET junction profile with SiGe channel |
US8361856B2 (en) | 2010-11-01 | 2013-01-29 | Micron Technology, Inc. | Memory cells, arrays of memory cells, and methods of forming memory cells |
US8450175B2 (en) | 2011-02-22 | 2013-05-28 | Micron Technology, Inc. | Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith |
CN102737995B (zh) * | 2011-04-01 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
US8569831B2 (en) | 2011-05-27 | 2013-10-29 | Micron Technology, Inc. | Integrated circuit arrays and semiconductor constructions |
US10068802B2 (en) * | 2011-10-17 | 2018-09-04 | Texas Instruments Incorporated | Threshold mismatch and IDDQ reduction using split carbon co-implantation |
US9036391B2 (en) | 2012-03-06 | 2015-05-19 | Micron Technology, Inc. | Arrays of vertically-oriented transistors, memory arrays including vertically-oriented transistors, and memory cells |
US8822295B2 (en) * | 2012-04-03 | 2014-09-02 | International Business Machines Corporation | Low extension dose implants in SRAM fabrication |
US9129896B2 (en) | 2012-08-21 | 2015-09-08 | Micron Technology, Inc. | Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors |
US9006060B2 (en) * | 2012-08-21 | 2015-04-14 | Micron Technology, Inc. | N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors |
US9478550B2 (en) | 2012-08-27 | 2016-10-25 | Micron Technology, Inc. | Arrays of vertically-oriented transistors, and memory arrays including vertically-oriented transistors |
US9111853B2 (en) | 2013-03-15 | 2015-08-18 | Micron Technology, Inc. | Methods of forming doped elements of semiconductor device structures |
US20150041916A1 (en) * | 2013-08-08 | 2015-02-12 | Samsung Electronics Co., Ltd. | Semiconductor device and method of forming the same |
CN106328505B (zh) * | 2015-07-01 | 2019-07-30 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07131004A (ja) * | 1993-06-23 | 1995-05-19 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US5514902A (en) * | 1993-09-16 | 1996-05-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having MOS transistor |
JP3714995B2 (ja) * | 1995-07-05 | 2005-11-09 | シャープ株式会社 | 半導体装置 |
JPH10125916A (ja) | 1996-10-24 | 1998-05-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JPH10173177A (ja) | 1996-12-10 | 1998-06-26 | Mitsubishi Electric Corp | Misトランジスタの製造方法 |
JPH10242081A (ja) * | 1996-12-26 | 1998-09-11 | Sony Corp | 半導体装置の製造方法 |
JP3213560B2 (ja) * | 1997-01-21 | 2001-10-02 | 三洋電機株式会社 | 半導体装置及び半導体装置の製造方法 |
KR100273297B1 (ko) | 1998-09-08 | 2000-12-15 | 김영환 | 모스 트랜지스터 제조방법 |
US6369434B1 (en) * | 1999-07-30 | 2002-04-09 | International Business Machines Corporation | Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors |
KR100336768B1 (ko) * | 1999-11-03 | 2002-05-16 | 박종섭 | 반도체 장치 제조방법 |
JP3916386B2 (ja) * | 2000-08-28 | 2007-05-16 | シャープ株式会社 | 半導体装置の製造方法及びフォトリソグラフィ用マスク |
KR20030001942A (ko) * | 2001-06-28 | 2003-01-08 | 동부전자 주식회사 | 반도체소자 및 그 제조방법 |
-
2003
- 2003-06-13 JP JP2003168799A patent/JP4236992B2/ja not_active Expired - Fee Related
- 2003-06-20 US US10/465,823 patent/US6977417B2/en not_active Expired - Lifetime
- 2003-06-23 TW TW092116967A patent/TWI222177B/zh not_active IP Right Cessation
- 2003-06-24 CN CNB031428924A patent/CN1291500C/zh not_active Expired - Fee Related
- 2003-06-24 KR KR1020030040917A patent/KR100936413B1/ko active IP Right Grant
-
2005
- 2005-10-28 US US11/260,464 patent/US7592243B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100426527C (zh) * | 2004-05-24 | 2008-10-15 | 三星Sdi株式会社 | 薄膜晶体管衬底和其制造方法 |
CN102194748A (zh) * | 2010-03-15 | 2011-09-21 | 北京大学 | 半导体器件及其制造方法 |
CN102194748B (zh) * | 2010-03-15 | 2014-04-16 | 北京大学 | 半导体器件及其制造方法 |
CN102738000A (zh) * | 2011-04-12 | 2012-10-17 | 中芯国际集成电路制造(上海)有限公司 | 一种超浅结形成方法 |
CN109473357A (zh) * | 2018-10-29 | 2019-03-15 | 上海华力集成电路制造有限公司 | Mos晶体管的制造方法 |
CN109473357B (zh) * | 2018-10-29 | 2022-05-27 | 上海华力集成电路制造有限公司 | Mos晶体管的制造方法 |
CN111883422A (zh) * | 2020-07-16 | 2020-11-03 | 上海华虹宏力半导体制造有限公司 | 超级结器件的制作方法 |
CN114812877A (zh) * | 2021-01-27 | 2022-07-29 | 英飞凌科技股份有限公司 | 应力传感器和用于求取梯度补偿的机械应力分量的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1291500C (zh) | 2006-12-20 |
US6977417B2 (en) | 2005-12-20 |
JP4236992B2 (ja) | 2009-03-11 |
US7592243B2 (en) | 2009-09-22 |
KR20040000350A (ko) | 2004-01-03 |
KR100936413B1 (ko) | 2010-01-12 |
US20060046372A1 (en) | 2006-03-02 |
TW200403812A (en) | 2004-03-01 |
TWI222177B (en) | 2004-10-11 |
JP2004235603A (ja) | 2004-08-19 |
US20040004250A1 (en) | 2004-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1291500C (zh) | 半导体器件及其制备方法 | |
CN1246909C (zh) | 半导体器件及其制造方法 | |
CN1243372C (zh) | 制造具有超浅超陡反向表面沟道的半导体器件的方法 | |
CN1190853C (zh) | 半导体器件 | |
CN100336228C (zh) | 半导体器件 | |
CN1479374A (zh) | 外部放电保护电路 | |
CN1303698C (zh) | 半导体器件及其制造方法 | |
CN1449585A (zh) | 半导体器件及其制造方法 | |
CN1788354A (zh) | 半导体装置及其制造方法 | |
CN1870271A (zh) | 具有凹沟道结构单元晶体管的半导体器件及其制造方法 | |
CN1763973A (zh) | 半导体装置及其制造方法 | |
CN1384547A (zh) | 半导体器件及其制造方法 | |
CN1458675A (zh) | 具有超浅超陡反向表面沟道的半导体器件的制备方法 | |
CN1805144A (zh) | 半导体集成电路及其制造工艺 | |
CN1591906A (zh) | 场效应型晶体管及其制造方法 | |
CN1617353A (zh) | 半导体器件的制造方法 | |
CN1909243A (zh) | 半导体装置及其制造方法 | |
CN1126150C (zh) | 制造半导体器件的方法 | |
CN1956223A (zh) | 半导体装置及其制造方法 | |
CN1661778A (zh) | 半导体器件的制造方法 | |
CN1679169A (zh) | 半导体器件及其制造方法 | |
CN1825568A (zh) | 制造半导体集成电路的方法 | |
CN1893002A (zh) | 半导体器件的制造方法和半导体器件 | |
CN1855495A (zh) | 具有垂直定向的栅电极的场效应晶体管及其制造方法 | |
CN1253929C (zh) | 半导体装置及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081114 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081114 Address after: Tokyo, Japan, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kawasaki, Kanagawa, Japan Patentee before: Fujitsu Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Kanagawa Patentee after: Fujitsu Semiconductor Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061220 Termination date: 20190624 |
|
CF01 | Termination of patent right due to non-payment of annual fee |