CN1425187A - 离子化物理蒸汽沉积的方法和装置 - Google Patents
离子化物理蒸汽沉积的方法和装置 Download PDFInfo
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- CN1425187A CN1425187A CN00818496A CN00818496A CN1425187A CN 1425187 A CN1425187 A CN 1425187A CN 00818496 A CN00818496 A CN 00818496A CN 00818496 A CN00818496 A CN 00818496A CN 1425187 A CN1425187 A CN 1425187A
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- target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/358—Inductive energy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
镀膜 | DC电源(kW) | ICP电源(kW) | RF工作台电源(W) | 压力(mT) | N2流量(占总流量的%) | 工作台温度(℃) |
Cu | 8~15 | 1~5 | 0~100 | 50~75 | - | -50~0 |
Ta | 8~12 | 1~5 | 0~150 | 80~120 | - | 50~100 |
TaNx | 8~12 | 1~5 | 0~200 | 80~120 | 3~25 | 50~100 |
Claims (53)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/442,600 US6287435B1 (en) | 1998-05-06 | 1999-11-18 | Method and apparatus for ionized physical vapor deposition |
US09/442,600 | 1999-11-18 | ||
PCT/US2000/031756 WO2001037310A2 (en) | 1999-11-18 | 2000-11-17 | Method and apparatus for ionized physical vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1425187A true CN1425187A (zh) | 2003-06-18 |
CN1425187B CN1425187B (zh) | 2010-10-13 |
Family
ID=23757416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN008184968A Expired - Fee Related CN1425187B (zh) | 1999-11-18 | 2000-11-17 | 离子化物理蒸汽沉积方法和离子化物理蒸汽沉积装置 |
Country Status (8)
Country | Link |
---|---|
US (3) | US6287435B1 (zh) |
EP (1) | EP1243016B1 (zh) |
JP (1) | JP3959273B2 (zh) |
KR (1) | KR100396456B1 (zh) |
CN (1) | CN1425187B (zh) |
AU (1) | AU1660601A (zh) |
TW (1) | TW480529B (zh) |
WO (1) | WO2001037310A2 (zh) |
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CN101276748B (zh) * | 2002-10-02 | 2010-12-29 | 松下电器产业株式会社 | 等离子体掺杂装置 |
CN101959617A (zh) * | 2008-02-28 | 2011-01-26 | 应用材料公司 | 背面涂覆防止设备、包括背面涂覆防止设备的涂覆室和涂覆方法 |
CN102324367A (zh) * | 2004-09-21 | 2012-01-18 | 应用材料公司 | 制程处理室中阴极的射频接地 |
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CN103477721A (zh) * | 2011-04-04 | 2013-12-25 | 佳能安内华股份有限公司 | 处理装置 |
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CN105420679A (zh) * | 2015-11-16 | 2016-03-23 | 徐州中韵新材料科技有限公司 | 一种孪生对靶磁控溅射制备覆铜陶瓷基板的装置及方法 |
US9450330B2 (en) | 2014-06-30 | 2016-09-20 | Agilent Technologies, Inc. | Connector assembly for an inductively coupled plasma source |
CN110249407A (zh) * | 2017-02-03 | 2019-09-17 | 应用材料公司 | 在等离子体反应器中用于可调节工件偏压的系统 |
CN110952063A (zh) * | 2019-12-01 | 2020-04-03 | 王彦军 | 一种用于铝板加工防偏转多弧离子复合镀膜机 |
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CN113928872A (zh) * | 2021-09-27 | 2022-01-14 | 中国电子科技集团公司第十一研究所 | 用于分子束外延设备的料渣收集装置 |
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JP2003514126A (ja) | 2003-04-15 |
CN1425187B (zh) | 2010-10-13 |
US6287435B1 (en) | 2001-09-11 |
JP3959273B2 (ja) | 2007-08-15 |
US20020104751A1 (en) | 2002-08-08 |
EP1243016A2 (en) | 2002-09-25 |
WO2001037310A3 (en) | 2002-04-11 |
US6458252B1 (en) | 2002-10-01 |
KR100396456B1 (ko) | 2003-09-02 |
WO2001037310A2 (en) | 2001-05-25 |
TW480529B (en) | 2002-03-21 |
US6719886B2 (en) | 2004-04-13 |
EP1243016B1 (en) | 2011-08-17 |
AU1660601A (en) | 2001-05-30 |
KR20010093257A (ko) | 2001-10-27 |
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