CN103184421A - 真空溅射靶磁芯 - Google Patents

真空溅射靶磁芯 Download PDF

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Publication number
CN103184421A
CN103184421A CN2011104544294A CN201110454429A CN103184421A CN 103184421 A CN103184421 A CN 103184421A CN 2011104544294 A CN2011104544294 A CN 2011104544294A CN 201110454429 A CN201110454429 A CN 201110454429A CN 103184421 A CN103184421 A CN 103184421A
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CN
China
Prior art keywords
magnet
magnetic core
sputtering target
retaining plate
vacuum sputtering
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Pending
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CN2011104544294A
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English (en)
Inventor
黄登聪
徐华勇
刘振章
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN2011104544294A priority Critical patent/CN103184421A/zh
Priority to TW101100548A priority patent/TW201326442A/zh
Priority to US13/534,336 priority patent/US20130168242A1/en
Publication of CN103184421A publication Critical patent/CN103184421A/zh
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种真空溅射靶磁芯,该真空溅射靶磁芯包括一罩体和磁体固定板,该磁体固定板固定于罩体内,在该磁体固定板上在竖直方向开设有安装槽,该安装槽内设有第一磁体,用以形成溅射磁场,在该磁体固定板的两端装设有第二磁体,用于对该溅射的第一磁体产生的磁场进行封磁。本发明的真空溅射靶磁芯的加工成本低,结构简单,使用寿命长。

Description

真空溅射靶磁芯
技术领域
本发明涉及一种真空溅射靶磁芯,尤其涉及一种结构简单,使用寿命长的真空溅射靶磁芯。
背景技术
物理气相沉积(Physical Vapor Deposition),是一种利用物理方式在基材上沉积薄膜的技术,在PVD磁控溅射技术中,圆柱形靶是因其具有靶材利用率高、工艺稳定等明显的优势被广泛使用,圆柱靶磁芯对圆柱靶的整体性能起着至关重要的作用。但目前的圆柱靶磁芯结构复杂、加工成本高及使用寿命短。
发明内容
有鉴于此,本发明提出一种结构简单,使用寿命长的真空溅射靶磁芯。
一种真空溅射靶磁芯,该真空溅射靶磁芯包括一罩体和磁体固定板,该磁体固定板固定于罩体内,沿该磁体固定板上在竖直方向的平面上开设有安装槽,该安装槽内设有第一磁体,用以形成溅射磁场,在该磁体固定板的两端装设有第二磁体,用于对该溅射的第一磁体产生的磁场进行封磁。
上述技术方案将磁体固定板固定于罩体内,这样可有效地保护了磁体,结构简单,使整个磁芯的使用寿命大幅提升。
附图说明
图1是本发明较佳实施例真空溅射靶磁芯整体图。
图2是本发明较佳实施例真空溅射靶磁芯局分解图。
图3是本发明较佳实施例真空溅射靶磁芯局部放大图。
主要元件符号说明
真空溅射靶磁芯 10
罩体 11
底罩 113
罩盖 115
磁体固定板 13
安装槽 131
第一磁体 15
第二磁体 17
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
参见图1-3,本发明一较佳实施例提供了一种真空溅射靶磁芯10,其包括一罩体11和磁体固定板13,该磁体固定板13固定于罩体11内。
参见图2,所述罩体11包括底罩113和罩盖115,所述底罩113为一长条状具有弧形的凹陷槽体,所述磁体固定板13与罩体11的底罩113通过点焊的方式安装固定在该底罩113的弧形凹陷槽体内,该罩盖115通过焊接与底罩113完全密闭,将该固定在底罩113上的磁体固定板13密闭于该罩体11内,即用于对该溅射的第一磁体产生的磁场进行封磁。
参见图2、3,所述磁体固定板13为一长条形板,沿着该磁体固定板13在竖直方向的平面上开设有两排安装槽131,在该竖直方向所开设的安装槽131内设有磁体15,用于形成磁控靶材在溅射时所需磁场。该磁体固定板13的两端也分别设置有第二磁体17,其作用为进行封磁,避免磁体固定板13的竖直方向开设的安装槽131靶材磁场飞逸。该位于磁体固定板13的两端的磁体15可通过粘结等方式固定在该磁体固定板13的两端部,所述磁体固定板材质为钢材。
所述安装在安装槽131内和固定该磁体固定板13的两端的磁体15材质为磁铁及其他永磁类材料。
组装所述真空溅射靶磁芯10,将第一磁体15安装进该磁体固定板13上在两竖直方向开设的安装槽131内,在该第二磁体17固定板13的两端。然后,经安装有第一磁体15和第二磁体17的磁体固定板13通过点焊的方式安装固定在该底罩113的弧形凹陷槽体内,之后,将罩盖115通过焊接与底罩113完全密闭,完成真空溅射靶磁芯10组装。
相较现有技术,本发明将磁体固定板13与罩体11内的底罩13通过点焊的方式连接在一起,有效地保护了第一磁体15和第二磁体17,结构简单,并使整个磁芯10的使用寿命大幅提升。

Claims (6)

1.一种真空溅射靶磁芯,其特征在于:该真空溅射靶磁芯包括一罩体和磁体固定板,该磁体固定板固定于罩体内,沿该磁体固定板上在竖直方向的平面上开设有安装槽,该安装槽内设有第一磁体,用以形成溅射磁场,在该磁体固定板的两端装设有第二磁体,用于对该溅射的第一磁体产生的磁场进行封磁。
2.如权利要求1所述的真空溅射靶磁芯,其特征在于:所述罩体分为底罩和罩盖,该上罩体通过焊接与底罩完全密闭,形成该罩体。
3.如权利要求1所述的真空溅射靶磁芯,其特征在于:所述磁体固定板固定在底罩内。
4.如权利要求1所述的真空溅射靶磁芯,其特征在于:所述磁体固定板上竖直方向平行开设两排安装槽。
5.如权利要求1所述的真空溅射靶磁芯,其特征在于:所述磁体通过粘帖固定在磁体固定板两端,所述磁体固定板材质为钢材。
6.如权利要求1-5任意一项所述的真空溅射靶磁芯,所述的磁体为磁铁。
CN2011104544294A 2011-12-30 2011-12-30 真空溅射靶磁芯 Pending CN103184421A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2011104544294A CN103184421A (zh) 2011-12-30 2011-12-30 真空溅射靶磁芯
TW101100548A TW201326442A (zh) 2011-12-30 2012-01-06 真空濺射靶磁芯
US13/534,336 US20130168242A1 (en) 2011-12-30 2012-06-27 Magnetic core for cylindrical magnetron sputtering target

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN105543791A (zh) * 2015-12-08 2016-05-04 北京大学深圳研究生院 金属等离子体源及应用
CN114921764A (zh) * 2022-06-28 2022-08-19 松山湖材料实验室 一种用于高功率脉冲磁控溅射的装置及方法

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US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
CN1537318A (zh) * 2001-08-02 2004-10-13 N��V�������عɷ����޹�˾ 磁场强度可调的溅射磁控管装置
CN101126152A (zh) * 2006-08-18 2008-02-20 深圳豪威真空光电子股份有限公司 柱状磁控溅射器
US20100170780A1 (en) * 2009-01-05 2010-07-08 Applied Materials, Inc. Magnet bar support system

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US5096562A (en) * 1989-11-08 1992-03-17 The Boc Group, Inc. Rotating cylindrical magnetron structure for large area coating
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Publication number Priority date Publication date Assignee Title
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
CN1537318A (zh) * 2001-08-02 2004-10-13 N��V�������عɷ����޹�˾ 磁场强度可调的溅射磁控管装置
CN101126152A (zh) * 2006-08-18 2008-02-20 深圳豪威真空光电子股份有限公司 柱状磁控溅射器
US20100170780A1 (en) * 2009-01-05 2010-07-08 Applied Materials, Inc. Magnet bar support system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105543791A (zh) * 2015-12-08 2016-05-04 北京大学深圳研究生院 金属等离子体源及应用
CN114921764A (zh) * 2022-06-28 2022-08-19 松山湖材料实验室 一种用于高功率脉冲磁控溅射的装置及方法
CN114921764B (zh) * 2022-06-28 2023-09-22 松山湖材料实验室 一种用于高功率脉冲磁控溅射的装置及方法

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TW201326442A (zh) 2013-07-01

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Application publication date: 20130703