CN1421935A - 薄膜晶体管的多晶硅层及其显示器 - Google Patents
薄膜晶体管的多晶硅层及其显示器 Download PDFInfo
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- CN1421935A CN1421935A CN02152432A CN02152432A CN1421935A CN 1421935 A CN1421935 A CN 1421935A CN 02152432 A CN02152432 A CN 02152432A CN 02152432 A CN02152432 A CN 02152432A CN 1421935 A CN1421935 A CN 1421935A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010409 thin film Substances 0.000 title claims abstract description 16
- 229920005591 polysilicon Polymers 0.000 claims description 51
- 239000013078 crystal Substances 0.000 claims description 31
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
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Abstract
Description
θ | Gs(μm) | L(μm) | Nmax | P | Gs(μm) | L(μm) | Nmax | P | Gs(μm) | L(μm) | Nmax | P |
2° | 0.4 | 1 | 3 | 0.778 | 1.5 | 1 | 1 | 0.741 | 2.5 | 1 | 1 | 0.444 |
2 | 6 | 0.277 | 2 | 2 | 0.407 | 2 | 1 | 0.844 | ||||
3 | 8 | 0.777 | 3 | 3 | 0.074 | 3 | 2 | 0.244 | ||||
4 | 11 | 0.277 | 4 | 3 | 0.741 | 4 | 2 | 0.644 | ||||
5 | 13 | 0.778 | 5 | 4 | 0.407 | 5 | 3 | 0.044 | ||||
6 | 16 | 0.277 | 6 | 5 | 0.074 | 6 | 3 | 0.444 | ||||
7 | 18 | 0.777 | 7 | 5 | 0.740 | 7 | 3 | 0.844 | ||||
8 | 21 | 0.277 | 8 | 6 | 0.407 | 8 | 4 | 0.244 | ||||
9 | 23 | 0.776 | 9 | 7 | 0.074 | 9 | 4 | 0.644 | ||||
10 | 26 | 0.276 | 10 | 7 | 0.740 | 10 | 5 | 0.044 | ||||
5° | 0.4 | 1 | 4 | 0.193 | 1.5 | 1 | 1 | 0.852 | 2.5 | 1 | 1 | 0.511 |
2 | 6 | 0.692 | 2 | 2 | 0.518 | 2 | 1 | 0.911 | ||||
3 | 9 | 0.191 | 3 | 3 | 0.184 | 3 | 2 | 0.311 | ||||
4 | 11 | 0.690 | 4 | 3 | 0.851 | 4 | 2 | 0.710 | ||||
5 | 14 | 0.190 | 5 | 4 | 0.517 | 5 | 3 | 0.110 | ||||
6 | 16 | 0.689 | 6 | 5 | 0.184 | 6 | 3 | 0.510 | ||||
7 | 19 | 0.188 | 7 | 5 | 0.850 | 7 | 3 | 0.910 | ||||
8 | 21 | 0.687 | 8 | 6 | 0.516 | 8 | 4 | 0.310 | ||||
9 | 24 | 0.186 | 9 | 7 | 0.183 | 9 | 4 | 0.710 | ||||
10 | 26 | 0.685 | 10 | 7 | 0.849 | 10 | 5 | 0.110 |
θ | L(μm) | Gs(μm) | Nmax | P | L(μm) | Gs(μm) | Nmax | P | L(μm) | Gs(μm) | Nmax | P |
2° | 4 | 0.5 | 9 | 0.222 | 7 | 0.5 | 15 | 0.221 | 2.5 | 0.5 | 21 | 0.221 |
1 | 5 | 0.111 | 1 | 8 | 0.111 | 1 | 11 | 0.110 | ||||
1.5 | 3 | 0.741 | 1.5 | 5 | 0.740 | 1.5 | 7 | 0.740 | ||||
2 | 3 | 0.055 | 2 | 4 | 0.555 | 2 | 6 | 0.055 | ||||
2.5 | 2 | 0.644 | 2.5 | 3 | 0.844 | 2.5 | 5 | 0.044 |
3 | 2 | 0.370 | 3 | 3 | 0.370 | 3 | 4 | 0.370 | ||||
3.5 | 2 | 0.175 | 3.5 | 3 | 0.032 | 3.5 | 4 | 0.889 | ||||
4 | 2 | 0.028 | 4 | 2 | 0.778 | 4 | 3 | 0.528 | ||||
4.5 | 1 | 0.914 | 4.5 | 2 | 0.580 | 4.5 | 3 | 0.247 | ||||
5 | 1 | 0.822 | 5 | 2 | 0.422 | 5 | 3 | 0.022 | ||||
5° | 4 | 0.5 | 9 | 0.552 | 7 | 0.5 | 15 | 0.550 | 2.5 | 0.5 | 21 | 0.548 |
1 | 5 | 0.276 | 1 | 8 | 0.275 | 1 | 11 | 0.274 | ||||
1.5 | 3 | 0.851 | 1.5 | 5 | 0.850 | 1.5 | 7 | 0.849 | ||||
2 | 3 | 0.138 | 2 | 4 | 0.638 | 2 | 6 | 0.137 | ||||
2.5 | 2 | 0.710 | 2.5 | 3 | 0.910 | 2.5 | 5 | 0.110 | ||||
3 | 2 | 0.425 | 3 | 3 | 0.425 | 3 | 4 | 0.425 | ||||
3.5 | 2 | 0.222 | 3.5 | 3 | 0.079 | 3.5 | 4 | 0.935 | ||||
4 | 2 | 0.069 | 4 | 2 | 0.819 | 4 | 3 | 0.568 | ||||
4.5 | 1 | 0.950 | 4.5 | 2 | 0.617 | 4.5 | 3 | 0.283 | ||||
5 | 1 | 0.855 | 5 | 2 | 0.455 | 5 | 3 | 0.055 |
Gs(μm) | L(μm) | Nmax | P | Gs(μm) | L(μm) | Nmax | P | Gs(μm) | L(μm) | Nmax | P | |
0° | 0.4 | 1 | 3 | 0.500 | 1.5 | 1 | 1 | 0.667 | 2.5 | 1 | 1 | 0.400 |
2 | 5 | 1.000 | 2 | 2 | 0.333 | 2 | 1 | 0.800 | ||||
3 | 8 | 0.500 | 3 | 2 | 1.000 | 3 | 2 | 0.200 | ||||
4 | 10 | 1.000 | 4 | 3 | 0.667 | 4 | 2 | 0.600 | ||||
5 | 13 | 0.500 | 5 | 4 | 0.333 | 5 | 2 | 1.000 | ||||
6 | 15 | 1.000 | 6 | 4 | 1.000 | 6 | 3 | 0.400 | ||||
7 | 18 | 0.500 | 7 | 5 | 0.667 | 7 | 3 | 0.800 | ||||
8 | 20 | 1.000 | 8 | 6 | 0.333 | 8 | 4 | 0.200 | ||||
9 | 23 | 0.500 | 9 | 6 | 1.000 | 9 | 4 | 0.600 | ||||
10 | 25 | 1.000 | 10 | 7 | 0.667 | 10 | 4 | 1.000 | ||||
11 | 28 | 0.500 | 11 | 8 | 0.333 | 11 | 5 | 0.400 | ||||
12 | 30 | 1.000 | 12 | 8 | 1.000 | 12 | 5 | 0.800 |
13 | 33 | 0.500 | 13 | 9 | 0.667 | 13 | 6 | 0.200 | ||||
14 | 35 | 1.000 | 14 | 10 | 0.333 | 14 | 6 | 0.600 | ||||
15 | 38 | 0.500 | 15 | 10 | 1.000 | 15 | 6 | 1.000 | ||||
16 | 40 | 1.000 | 16 | 11 | 0.667 | 16 | 7 | 0.400 | ||||
17 | 43 | 0.500 | 17 | 12 | 0.333 | 17 | 7 | 0.800 | ||||
18 | 45 | 1.000 | 18 | 12 | 1.000 | 18 | 8 | 0.200 | ||||
19 | 48 | 0.500 | 19 | 13 | 0.667 | 19 | 8 | 0.600 | ||||
20 | 50 | 1.000 | 20 | 14 | 0.333 | 20 | 8 | 1.000 |
θ | L(μm) | Gs(μm) | Nmax | P | L(μm) | Gs(μm) | Nmax | P | L(μm) | Gs(μm) | Nmax | P |
0° | 4 | 0.5 | 8 | 1.000 | 7 | 0.5 | 14 | 1.000 | 10 | 0.5 | 20 | 1.000 |
1 | 4 | 1.000 | 1 | 7 | 1.000 | 1 | 10 | 1.000 | ||||
1.5 | 3 | 0.667 | 1.5 | 5 | 0.667 | 1.5 | 7 | 0.667 | ||||
2 | 2 | 1.000 | 2 | 4 | 0.500 | 2 | 5 | 1.000 | ||||
2.5 | 2 | 0.600 | 2.5 | 3 | 0.800 | 2.5 | 4 | 1.000 | ||||
3 | 2 | 0.333 | 3 | 3 | 0.333 | 3 | 4 | 0.333 | ||||
3.5 | 2 | 0.143 | 3.5 | 2 | 1.000 | 3.5 | 3 | 0.857 | ||||
4 | 1 | 1.000 | 4 | 2 | 0.750 | 4 | 3 | 0.500 | ||||
4.5 | 1 | 0.889 | 4.5 | 2 | 0.556 | 4.5 | 3 | 0.222 | ||||
5 | 1 | 0.800 | 5 | 2 | 0.400 | 5 | 2 | 1.000 | ||||
5.5 | 1 | 0.727 | 5.5 | 2 | 0.273 | 5.5 | 2 | 0.818 | ||||
6 | 1 | 0.667 | 6 | 2 | 0.167 | 6 | 2 | 0.667 | ||||
6.5 | 1 | 0.615 | 6.5 | 2 | 0.077 | 6.5 | 2 | 0.538 | ||||
7 | 1 | 0.571 | 7 | 1 | 1.000 | 7 | 2 | 0.429 | ||||
7.5 | 1 | 0.533 | 7.5 | 1 | 0.933 | 7.5 | 2 | 0.333 | ||||
8 | 1 | 0.500 | 8 | 1 | 0.875 | 8 | 2 | 0.250 | ||||
8.5 | 1 | 0.471 | 8.5 | 1 | 0.824 | 8.5 | 2 | 0.176 | ||||
9 | 1 | 0.444 | 9 | 1 | 0.778 | 9 | 2 | 0.111 |
9.5 | 1 | 0.421 | 9.5 | 1 | 0.737 | 9.5 | 2 | 0.053 | ||||
10 | 1 | 0.400 | 10 | 1 | 0.700 | 10 | 1 | 1.000 |
Claims (36)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR10-2001-0074375A KR100483985B1 (ko) | 2001-11-27 | 2001-11-27 | 박막 트랜지스터용 다결정 실리콘 박막 및 이를 사용한디바이스 |
KR74375/01 | 2001-11-27 | ||
KR74375/2001 | 2001-11-27 |
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CN2010106179144A Division CN102142463A (zh) | 2001-11-27 | 2002-11-27 | 薄膜晶体管的多晶硅层及其显示器 |
CN2009101262299A Division CN101494235B (zh) | 2001-11-27 | 2002-11-27 | 薄膜晶体管的多晶硅层 |
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CN1421935A true CN1421935A (zh) | 2003-06-04 |
CN100511710C CN100511710C (zh) | 2009-07-08 |
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CN2009101262299A Expired - Lifetime CN101494235B (zh) | 2001-11-27 | 2002-11-27 | 薄膜晶体管的多晶硅层 |
CNB021524327A Expired - Lifetime CN100511710C (zh) | 2001-11-27 | 2002-11-27 | 薄膜晶体管的多晶硅层及其显示器 |
CN2010106179144A Pending CN102142463A (zh) | 2001-11-27 | 2002-11-27 | 薄膜晶体管的多晶硅层及其显示器 |
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Country Status (5)
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US (1) | US6759679B2 (zh) |
EP (1) | EP1317002B1 (zh) |
JP (1) | JP4361722B2 (zh) |
KR (1) | KR100483985B1 (zh) |
CN (3) | CN101494235B (zh) |
Cited By (5)
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CN1297008C (zh) * | 2003-06-10 | 2007-01-24 | 三星Sdi株式会社 | 薄膜晶体管及其制造方法和使用其的显示器件 |
CN1324540C (zh) * | 2003-06-05 | 2007-07-04 | 三星Sdi株式会社 | 具有多晶硅薄膜晶体管的平板显示装置 |
CN1655056B (zh) * | 2004-01-06 | 2010-10-27 | 三星电子株式会社 | 光学掩模及利用该掩模的薄膜晶体管阵列面板的制造方法 |
CN103137484A (zh) * | 2011-11-30 | 2013-06-05 | 广东中显科技有限公司 | 搭桥晶粒多晶硅薄膜晶体管的制造方法 |
WO2013078641A1 (zh) * | 2011-11-30 | 2013-06-06 | 广东中显科技有限公司 | 搭桥晶粒多晶硅薄膜晶体管及其制造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100514179B1 (ko) * | 2002-11-19 | 2005-09-13 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 사용하는 유기 전계 발광 소자 |
KR100483987B1 (ko) * | 2002-07-08 | 2005-04-15 | 삼성에스디아이 주식회사 | 티에프티용 다결정 실리콘 박막 및 이를 사용한 디바이스 |
KR100454751B1 (ko) * | 2002-10-21 | 2004-11-03 | 삼성에스디아이 주식회사 | 듀얼 또는 멀티플 게이트를 사용하는 티에프티의 제조 방법 |
KR101034744B1 (ko) * | 2004-06-25 | 2011-05-17 | 엘지디스플레이 주식회사 | 액정표시장치의 박막트랜지스터 구조 |
KR100712101B1 (ko) * | 2004-06-30 | 2007-05-02 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
JP4169071B2 (ja) * | 2006-05-25 | 2008-10-22 | ソニー株式会社 | 表示装置 |
KR20100036624A (ko) * | 2008-09-30 | 2010-04-08 | 삼성전자주식회사 | 박막트랜지스터 기판 및 이를 갖는 유기발광 표시장치 |
CN104900532B (zh) | 2015-06-15 | 2018-10-02 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板、显示装置 |
JP6434872B2 (ja) * | 2015-07-31 | 2018-12-05 | 東芝メモリ株式会社 | 半導体装置 |
US10629752B1 (en) * | 2018-10-11 | 2020-04-21 | Applied Materials, Inc. | Gate all-around device |
US11417730B2 (en) * | 2019-08-09 | 2022-08-16 | Micron Technology, Inc. | Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions |
US11024736B2 (en) | 2019-08-09 | 2021-06-01 | Micron Technology, Inc. | Transistor and methods of forming integrated circuitry |
US10964811B2 (en) | 2019-08-09 | 2021-03-30 | Micron Technology, Inc. | Transistor and methods of forming transistors |
US11637175B2 (en) | 2020-12-09 | 2023-04-25 | Micron Technology, Inc. | Vertical transistors |
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JP3642546B2 (ja) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | 多結晶半導体薄膜の製造方法 |
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- 2002-11-20 EP EP02090384.5A patent/EP1317002B1/en not_active Expired - Lifetime
- 2002-11-21 JP JP2002338473A patent/JP4361722B2/ja not_active Expired - Lifetime
- 2002-11-27 CN CN2009101262299A patent/CN101494235B/zh not_active Expired - Lifetime
- 2002-11-27 CN CNB021524327A patent/CN100511710C/zh not_active Expired - Lifetime
- 2002-11-27 CN CN2010106179144A patent/CN102142463A/zh active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1324540C (zh) * | 2003-06-05 | 2007-07-04 | 三星Sdi株式会社 | 具有多晶硅薄膜晶体管的平板显示装置 |
US8049220B2 (en) | 2003-06-05 | 2011-11-01 | Samsung Mobile Display Co., Ltd. | Flat panel display device with polycrystalline silicon thin film transistor |
CN1297008C (zh) * | 2003-06-10 | 2007-01-24 | 三星Sdi株式会社 | 薄膜晶体管及其制造方法和使用其的显示器件 |
CN1655056B (zh) * | 2004-01-06 | 2010-10-27 | 三星电子株式会社 | 光学掩模及利用该掩模的薄膜晶体管阵列面板的制造方法 |
US7858450B2 (en) | 2004-01-06 | 2010-12-28 | Samsung Electronics Co., Ltd. | Optic mask and manufacturing method of thin film transistor array panel using the same |
CN103137484A (zh) * | 2011-11-30 | 2013-06-05 | 广东中显科技有限公司 | 搭桥晶粒多晶硅薄膜晶体管的制造方法 |
WO2013078641A1 (zh) * | 2011-11-30 | 2013-06-06 | 广东中显科技有限公司 | 搭桥晶粒多晶硅薄膜晶体管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1317002B1 (en) | 2016-10-12 |
JP4361722B2 (ja) | 2009-11-11 |
CN101494235A (zh) | 2009-07-29 |
US20030102508A1 (en) | 2003-06-05 |
EP1317002A3 (en) | 2004-09-29 |
JP2003188188A (ja) | 2003-07-04 |
CN102142463A (zh) | 2011-08-03 |
CN101494235B (zh) | 2011-03-23 |
CN100511710C (zh) | 2009-07-08 |
KR20030043292A (ko) | 2003-06-02 |
EP1317002A2 (en) | 2003-06-04 |
KR100483985B1 (ko) | 2005-04-15 |
US6759679B2 (en) | 2004-07-06 |
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