CN1763968A - 双极型器件以及增加其中电荷载流子迁移率的方法 - Google Patents
双极型器件以及增加其中电荷载流子迁移率的方法 Download PDFInfo
- Publication number
- CN1763968A CN1763968A CNA2005100978284A CN200510097828A CN1763968A CN 1763968 A CN1763968 A CN 1763968A CN A2005100978284 A CNA2005100978284 A CN A2005100978284A CN 200510097828 A CN200510097828 A CN 200510097828A CN 1763968 A CN1763968 A CN 1763968A
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- bipolar device
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/242—AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/931,660 | 2004-09-01 | ||
US10/931,660 US7102205B2 (en) | 2004-09-01 | 2004-09-01 | Bipolar transistor with extrinsic stress layer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1763968A true CN1763968A (zh) | 2006-04-26 |
CN100407442C CN100407442C (zh) | 2008-07-30 |
Family
ID=35941887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100978284A Active CN100407442C (zh) | 2004-09-01 | 2005-08-30 | 双极型器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7102205B2 (zh) |
JP (1) | JP5107512B2 (zh) |
CN (1) | CN100407442C (zh) |
TW (1) | TW200623392A (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103000674A (zh) * | 2012-12-14 | 2013-03-27 | 复旦大学 | 一种晶体管及其制造方法 |
CN102082172B (zh) * | 2009-11-26 | 2013-04-24 | 上海华虹Nec电子有限公司 | 应用锗硅工艺的多晶三极管及其制作方法 |
WO2014089813A1 (zh) * | 2012-12-14 | 2014-06-19 | 复旦大学 | 一种晶体管及其制造方法 |
CN104425577A (zh) * | 2013-08-30 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | 自对准锗硅异质结双极型三极管器件及其制造方法 |
CN104900686A (zh) * | 2014-03-03 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | 晶体管及其制造方法 |
CN108400162A (zh) * | 2017-02-08 | 2018-08-14 | 格芯公司 | 用于改善迁移率的具有应力材料的异质接面双极晶体管 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7329941B2 (en) * | 2004-07-20 | 2008-02-12 | International Business Machines Corporation | Creating increased mobility in a bipolar device |
US7262484B2 (en) * | 2005-05-09 | 2007-08-28 | International Business Machines Corporation | Structure and method for performance improvement in vertical bipolar transistors |
US8407634B1 (en) * | 2005-12-01 | 2013-03-26 | Synopsys Inc. | Analysis of stress impact on transistor performance |
US7342293B2 (en) * | 2005-12-05 | 2008-03-11 | International Business Machines Corporation | Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same |
JP2007250903A (ja) * | 2006-03-16 | 2007-09-27 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
EP2014237B1 (en) * | 2006-04-18 | 2012-05-16 | Panasonic Corporation | Ultrasonograph |
US7888745B2 (en) * | 2006-06-21 | 2011-02-15 | International Business Machines Corporation | Bipolar transistor with dual shallow trench isolation and low base resistance |
US7772676B2 (en) * | 2006-06-23 | 2010-08-10 | Infineon Technologies Ag | Strained semiconductor device and method of making same |
JP2008041899A (ja) * | 2006-08-04 | 2008-02-21 | Toshiba Corp | 半導体装置 |
KR100817403B1 (ko) * | 2006-11-20 | 2008-03-27 | 전북대학교산학협력단 | 반도체 소자 구조 및 그 제조 방법 |
US7557010B2 (en) * | 2007-02-12 | 2009-07-07 | Agere Systems Inc. | Method to improve writer leakage in a SiGe bipolar device |
KR101007242B1 (ko) * | 2007-02-22 | 2011-01-13 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
US7964465B2 (en) * | 2008-04-17 | 2011-06-21 | International Business Machines Corporation | Transistors having asymmetric strained source/drain portions |
US7982269B2 (en) * | 2008-04-17 | 2011-07-19 | International Business Machines Corporation | Transistors having asymmetric strained source/drain portions |
EP2315238B1 (en) * | 2009-10-26 | 2012-06-20 | Nxp B.V. | Heterojunction Bipolar Transistor |
CN101866947A (zh) * | 2010-05-12 | 2010-10-20 | 上海宏力半导体制造有限公司 | 硅锗异质结双极型晶体管 |
US20120313146A1 (en) | 2011-06-08 | 2012-12-13 | International Business Machines Corporation | Transistor and method of forming the transistor so as to have reduced base resistance |
US8603883B2 (en) * | 2011-11-16 | 2013-12-10 | International Business Machines Corporation | Interface control in a bipolar junction transistor |
US9817928B2 (en) | 2012-08-31 | 2017-11-14 | Synopsys, Inc. | Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits |
US9190346B2 (en) | 2012-08-31 | 2015-11-17 | Synopsys, Inc. | Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits |
US8847324B2 (en) | 2012-12-17 | 2014-09-30 | Synopsys, Inc. | Increasing ION /IOFF ratio in FinFETs and nano-wires |
US9379018B2 (en) | 2012-12-17 | 2016-06-28 | Synopsys, Inc. | Increasing Ion/Ioff ratio in FinFETs and nano-wires |
US8975146B2 (en) * | 2013-05-01 | 2015-03-10 | International Business Machines Corporation | Trench isolation structures and methods for bipolar junction transistors |
US9608096B1 (en) | 2015-10-02 | 2017-03-28 | Globalfoundries Inc. | Implementing stress in a bipolar junction transistor |
US9825157B1 (en) | 2016-06-29 | 2017-11-21 | Globalfoundries Inc. | Heterojunction bipolar transistor with stress component |
US10847409B2 (en) * | 2018-09-27 | 2020-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US11145725B2 (en) * | 2019-09-23 | 2021-10-12 | Globalfoundries U.S. Inc. | Heterojunction bipolar transistor |
US11721722B2 (en) | 2021-08-27 | 2023-08-08 | Globalfoundries U.S. Inc. | Bipolar junction transistors including a stress liner |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766981B2 (ja) * | 1987-03-26 | 1995-07-19 | 日本電気株式会社 | 赤外線センサ |
JPH04179235A (ja) * | 1990-11-14 | 1992-06-25 | Toshiba Corp | ヘテロ接合バイポーラトランジスタ |
JP3085553B2 (ja) * | 1991-11-20 | 2000-09-11 | 日本電信電話株式会社 | 半導体装置の表層構造 |
JPH06275814A (ja) * | 1993-03-17 | 1994-09-30 | Sankyo Seiki Mfg Co Ltd | 半導体材料 |
JP3326427B2 (ja) * | 1996-09-17 | 2002-09-24 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
FR2804247B1 (fr) * | 2000-01-21 | 2002-04-12 | St Microelectronics Sa | Procede de realisation d'un transistor bipolaire a emetteur et base extrinseque auto-alignes |
US20030199153A1 (en) * | 2000-01-27 | 2003-10-23 | Kovacic Stephen J. | Method of producing SI-GE base semiconductor devices |
US6852602B2 (en) * | 2001-01-31 | 2005-02-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor crystal film and method for preparation thereof |
JP4569026B2 (ja) * | 2001-03-30 | 2010-10-27 | 信越半導体株式会社 | 半導体基板及びその製造方法 |
US7060582B2 (en) * | 2001-06-05 | 2006-06-13 | Sony Corporation | Adjusting the germanium concentration of a semiconductor layer for equal thermal expansion for a hetero-junction bipolar transistor device |
JP2003151987A (ja) * | 2001-11-19 | 2003-05-23 | Mitsubishi Heavy Ind Ltd | 半導体基板、及び、半導体基板の製造方法 |
JP4182177B2 (ja) * | 2002-10-30 | 2008-11-19 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7101742B2 (en) * | 2003-08-12 | 2006-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel complementary field-effect transistors and methods of manufacture |
US7005359B2 (en) * | 2003-11-17 | 2006-02-28 | Intel Corporation | Bipolar junction transistor with improved extrinsic base region and method of fabrication |
-
2004
- 2004-09-01 US US10/931,660 patent/US7102205B2/en active Active
-
2005
- 2005-08-29 JP JP2005247839A patent/JP5107512B2/ja not_active Expired - Fee Related
- 2005-08-30 CN CN2005100978284A patent/CN100407442C/zh active Active
- 2005-08-31 TW TW094129854A patent/TW200623392A/zh unknown
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102082172B (zh) * | 2009-11-26 | 2013-04-24 | 上海华虹Nec电子有限公司 | 应用锗硅工艺的多晶三极管及其制作方法 |
CN103000674A (zh) * | 2012-12-14 | 2013-03-27 | 复旦大学 | 一种晶体管及其制造方法 |
WO2014089813A1 (zh) * | 2012-12-14 | 2014-06-19 | 复旦大学 | 一种晶体管及其制造方法 |
CN104425577A (zh) * | 2013-08-30 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | 自对准锗硅异质结双极型三极管器件及其制造方法 |
CN104425577B (zh) * | 2013-08-30 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | 自对准锗硅异质结双极型三极管器件及其制造方法 |
CN104900686A (zh) * | 2014-03-03 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | 晶体管及其制造方法 |
CN104900686B (zh) * | 2014-03-03 | 2018-10-26 | 中芯国际集成电路制造(上海)有限公司 | 晶体管及其制造方法 |
CN108400162A (zh) * | 2017-02-08 | 2018-08-14 | 格芯公司 | 用于改善迁移率的具有应力材料的异质接面双极晶体管 |
CN108400162B (zh) * | 2017-02-08 | 2021-03-30 | 格芯(美国)集成电路科技有限公司 | 用于改善迁移率的具有应力材料的异质接面双极晶体管 |
US11876123B2 (en) | 2017-02-08 | 2024-01-16 | Globalfoundries U.S. Inc. | Heterojunction bipolar transistors with stress material for improved mobility |
Also Published As
Publication number | Publication date |
---|---|
CN100407442C (zh) | 2008-07-30 |
TW200623392A (en) | 2006-07-01 |
US20060043529A1 (en) | 2006-03-02 |
JP5107512B2 (ja) | 2012-12-26 |
US7102205B2 (en) | 2006-09-05 |
JP2006074040A (ja) | 2006-03-16 |
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