CN1249788C - 绝缘膜的蚀刻方法 - Google Patents
绝缘膜的蚀刻方法 Download PDFInfo
- Publication number
- CN1249788C CN1249788C CNB018203515A CN01820351A CN1249788C CN 1249788 C CN1249788 C CN 1249788C CN B018203515 A CNB018203515 A CN B018203515A CN 01820351 A CN01820351 A CN 01820351A CN 1249788 C CN1249788 C CN 1249788C
- Authority
- CN
- China
- Prior art keywords
- gas
- etching
- ratio
- dielectric film
- fluorocarbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims description 32
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 126
- 239000003595 mist Substances 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 230000001105 regulatory effect Effects 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical compound [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 241001012508 Carpiodes cyprinus Species 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
- H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP389151/2000 | 2000-12-21 | ||
JP2000389151 | 2000-12-21 | ||
JP389151/00 | 2000-12-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1483219A CN1483219A (zh) | 2004-03-17 |
CN1249788C true CN1249788C (zh) | 2006-04-05 |
Family
ID=18855762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018203515A Expired - Lifetime CN1249788C (zh) | 2000-12-21 | 2001-12-13 | 绝缘膜的蚀刻方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20040035826A1 (ja) |
JP (1) | JP4008352B2 (ja) |
KR (1) | KR100782632B1 (ja) |
CN (1) | CN1249788C (ja) |
AU (1) | AU2002222631A1 (ja) |
TW (1) | TW521335B (ja) |
WO (1) | WO2002050885A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106297831A (zh) * | 2015-05-21 | 2017-01-04 | 新科实业有限公司 | 在衬底形成图案的方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4164643B2 (ja) * | 2002-07-17 | 2008-10-15 | 日本ゼオン株式会社 | ドライエッチング方法及びパーフルオロ−2−ペンチンの製造方法 |
JP4963156B2 (ja) * | 2003-10-03 | 2012-06-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4723871B2 (ja) * | 2004-06-23 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置 |
US7794616B2 (en) * | 2004-08-09 | 2010-09-14 | Tokyo Electron Limited | Etching gas, etching method and etching gas evaluation method |
KR100650835B1 (ko) * | 2004-10-29 | 2006-11-27 | 에스티마이크로일렉트로닉스 엔.브이. | 반도체 소자의 소자분리막 형성방법 |
US7416676B2 (en) * | 2005-02-16 | 2008-08-26 | Tokyo Electron Limited | Plasma etching method and apparatus, control program for performing the etching method, and storage medium storing the control program |
JP2007242753A (ja) * | 2006-03-07 | 2007-09-20 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
US7517804B2 (en) | 2006-08-31 | 2009-04-14 | Micron Technologies, Inc. | Selective etch chemistries for forming high aspect ratio features and associated structures |
JP5214152B2 (ja) * | 2007-02-08 | 2013-06-19 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
JP4450245B2 (ja) * | 2007-06-07 | 2010-04-14 | 株式会社デンソー | 半導体装置の製造方法 |
JP4978512B2 (ja) * | 2008-02-29 | 2012-07-18 | 日本ゼオン株式会社 | プラズマエッチング方法 |
US20110265883A1 (en) * | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Methods and apparatus for reducing flow splitting errors using orifice ratio conductance control |
CN103578973B (zh) * | 2012-07-29 | 2017-09-05 | 中国科学院微电子研究所 | 氮化硅高深宽比孔的循环刻蚀方法 |
CN103903978B (zh) * | 2012-12-27 | 2016-12-28 | 南亚科技股份有限公司 | 蚀刻方法 |
JP6836959B2 (ja) | 2017-05-16 | 2021-03-03 | 東京エレクトロン株式会社 | プラズマ処理装置、処理システム、及び、多孔質膜をエッチングする方法 |
US10276439B2 (en) | 2017-06-02 | 2019-04-30 | International Business Machines Corporation | Rapid oxide etch for manufacturing through dielectric via structures |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3038950B2 (ja) * | 1991-02-12 | 2000-05-08 | ソニー株式会社 | ドライエッチング方法 |
JP3154128B2 (ja) * | 1991-05-24 | 2001-04-09 | ソニー株式会社 | ドライエッチング方法 |
JP3116569B2 (ja) * | 1992-06-29 | 2000-12-11 | ソニー株式会社 | ドライエッチング方法 |
KR100246029B1 (ko) * | 1997-10-20 | 2000-03-02 | 구자홍 | 간헐 영상 녹화재생장치 |
TW394989B (en) * | 1997-10-29 | 2000-06-21 | Matsushita Electronics Corp | Semiconductor device manufacturing and reaction room environment control method for dry etching device |
JP3003657B2 (ja) * | 1997-12-24 | 2000-01-31 | 日本電気株式会社 | 半導体装置の製造方法 |
US6159862A (en) * | 1997-12-27 | 2000-12-12 | Tokyo Electron Ltd. | Semiconductor processing method and system using C5 F8 |
JPH11330046A (ja) * | 1998-05-08 | 1999-11-30 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
TW511335B (en) * | 1998-06-09 | 2002-11-21 | Mitsubishi Electric Corp | Integrated circuit |
US6297163B1 (en) * | 1998-09-30 | 2001-10-02 | Lam Research Corporation | Method of plasma etching dielectric materials |
US6316349B1 (en) * | 1998-11-12 | 2001-11-13 | Hyundai Electronics Industries Co., Ltd. | Method for forming contacts of semiconductor devices |
JP4230029B2 (ja) * | 1998-12-02 | 2009-02-25 | 東京エレクトロン株式会社 | プラズマ処理装置およびエッチング方法 |
US6417090B1 (en) * | 1999-01-04 | 2002-07-09 | Advanced Micro Devices, Inc. | Damascene arrangement for metal interconnection using low k dielectric constant materials for etch stop layer |
JP2000252259A (ja) * | 1999-02-25 | 2000-09-14 | Sony Corp | ドライエッチング方法及び半導体装置の製造方法 |
US6184107B1 (en) * | 1999-03-17 | 2001-02-06 | International Business Machines Corp. | Capacitor trench-top dielectric for self-aligned device isolation |
US6849193B2 (en) * | 1999-03-25 | 2005-02-01 | Hoiman Hung | Highly selective process for etching oxide over nitride using hexafluorobutadiene |
JP4578651B2 (ja) * | 1999-09-13 | 2010-11-10 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置、プラズマエッチング方法 |
JP2001135630A (ja) * | 1999-11-10 | 2001-05-18 | Matsushita Electronics Industry Corp | 半導体装置の製造方法 |
US6326307B1 (en) * | 1999-11-15 | 2001-12-04 | Appllied Materials, Inc. | Plasma pretreatment of photoresist in an oxide etch process |
JP3400770B2 (ja) * | 1999-11-16 | 2003-04-28 | 松下電器産業株式会社 | エッチング方法、半導体装置及びその製造方法 |
US6337244B1 (en) * | 2000-03-01 | 2002-01-08 | Micron Technology, Inc. | Method of forming flash memory |
US6451703B1 (en) * | 2000-03-10 | 2002-09-17 | Applied Materials, Inc. | Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas |
US6337285B1 (en) * | 2000-03-21 | 2002-01-08 | Micron Technology, Inc. | Self-aligned contact (SAC) etch with dual-chemistry process |
JP4839506B2 (ja) * | 2000-04-28 | 2011-12-21 | ダイキン工業株式会社 | ドライエッチング方法 |
KR100362834B1 (ko) * | 2000-05-02 | 2002-11-29 | 삼성전자 주식회사 | 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치 |
KR100759602B1 (ko) * | 2000-05-12 | 2007-09-17 | 동경 엘렉트론 주식회사 | 자기 정렬 콘택트 에칭 방법 |
US6362109B1 (en) * | 2000-06-02 | 2002-03-26 | Applied Materials, Inc. | Oxide/nitride etching having high selectivity to photoresist |
KR100363710B1 (ko) * | 2000-08-23 | 2002-12-05 | 삼성전자 주식회사 | 셀프-얼라인 콘택 구조를 갖는 반도체 장치 및 그 제조방법 |
US6716302B2 (en) * | 2000-11-01 | 2004-04-06 | Applied Materials Inc. | Dielectric etch chamber with expanded process window |
TWI290741B (en) * | 2000-11-08 | 2007-12-01 | Daikin Ind Ltd | Dry etching gas and method for dry etching |
JP4213871B2 (ja) * | 2001-02-01 | 2009-01-21 | 株式会社日立製作所 | 半導体装置の製造方法 |
TW483111B (en) * | 2001-06-08 | 2002-04-11 | Promos Technologies Inc | Method for forming contact of memory device |
US6674241B2 (en) * | 2001-07-24 | 2004-01-06 | Tokyo Electron Limited | Plasma processing apparatus and method of controlling chemistry |
US6518164B1 (en) * | 2001-11-30 | 2003-02-11 | United Microelectronics Corp. | Etching process for forming the trench with high aspect ratio |
-
2001
- 2001-12-13 KR KR1020037008446A patent/KR100782632B1/ko active IP Right Grant
- 2001-12-13 US US10/451,107 patent/US20040035826A1/en not_active Abandoned
- 2001-12-13 WO PCT/JP2001/010932 patent/WO2002050885A1/ja active Application Filing
- 2001-12-13 AU AU2002222631A patent/AU2002222631A1/en not_active Abandoned
- 2001-12-13 JP JP2002551894A patent/JP4008352B2/ja not_active Expired - Fee Related
- 2001-12-13 CN CNB018203515A patent/CN1249788C/zh not_active Expired - Lifetime
- 2001-12-18 TW TW090131337A patent/TW521335B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106297831A (zh) * | 2015-05-21 | 2017-01-04 | 新科实业有限公司 | 在衬底形成图案的方法 |
CN106297831B (zh) * | 2015-05-21 | 2020-04-21 | 新科实业有限公司 | 在衬底形成图案的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4008352B2 (ja) | 2007-11-14 |
WO2002050885A1 (fr) | 2002-06-27 |
KR100782632B1 (ko) | 2007-12-06 |
AU2002222631A1 (en) | 2002-07-01 |
CN1483219A (zh) | 2004-03-17 |
TW521335B (en) | 2003-02-21 |
US20040035826A1 (en) | 2004-02-26 |
KR20030066747A (ko) | 2003-08-09 |
JPWO2002050885A1 (ja) | 2004-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1249788C (zh) | 绝缘膜的蚀刻方法 | |
US6583065B1 (en) | Sidewall polymer forming gas additives for etching processes | |
JP5894622B2 (ja) | シリコン含有ハードマスクをエッチングする方法 | |
CN1286153C (zh) | 一种用于蚀刻晶片的电介质层的方法 | |
JP3574680B2 (ja) | キセノンを用いたプラズマエッチング | |
JP5553501B2 (ja) | 基板上に高アスペクト比の特徴部を形成する方法 | |
JP3213820B2 (ja) | 半導体基板上のデバイスの製造中に平行板反応器内で耐火性金属層をエッチングする方法 | |
CN101064244A (zh) | 形成用于高孔径比应用的各向异性特征图形的蚀刻方法 | |
CN101030530A (zh) | 形成用于高孔径比应用的各向异性特征图形的蚀刻方法 | |
US20110201208A1 (en) | Plasma etching method and plasma etching apparatus | |
JP2001517868A (ja) | フルオロプロペンまたはフルオロプロピレンを用いた酸化物の選択的エッチングプラズマ処理 | |
KR100255405B1 (ko) | 드라이에칭방법 | |
CN1505831A (zh) | 蚀刻有机抗反射涂层(arc)的方法 | |
CN100521111C (zh) | 等离子体蚀刻方法 | |
CN101038875A (zh) | 在介电层中蚀刻开口的方法 | |
JP2002543613A (ja) | 低容量の誘電体層をエッチングするための技術 | |
JP2002513207A (ja) | 低k誘電体層をエッチングする方法 | |
CN1524287A (zh) | 用于蚀刻有机低k材料的特殊化学工艺 | |
KR20030022361A (ko) | 티타늄 질화물 에칭방법 | |
CN1529905A (zh) | 有机绝缘膜的蚀刻方法和双波纹处理方法 | |
WO2007041423A1 (en) | Vertical profile fixing | |
EP1147549A1 (en) | Method of etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry | |
CN1279587C (zh) | 除去氮化硅膜的方法 | |
JP3253215B2 (ja) | エッチング方法及びエッチング装置 | |
CN1967786A (zh) | 等离子体蚀刻方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20060405 |