CN1249788C - 绝缘膜的蚀刻方法 - Google Patents

绝缘膜的蚀刻方法 Download PDF

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Publication number
CN1249788C
CN1249788C CNB018203515A CN01820351A CN1249788C CN 1249788 C CN1249788 C CN 1249788C CN B018203515 A CNB018203515 A CN B018203515A CN 01820351 A CN01820351 A CN 01820351A CN 1249788 C CN1249788 C CN 1249788C
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CN
China
Prior art keywords
gas
etching
ratio
dielectric film
fluorocarbon
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Expired - Lifetime
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CNB018203515A
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English (en)
Chinese (zh)
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CN1483219A (zh
Inventor
足立宪治
小林典之
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1483219A publication Critical patent/CN1483219A/zh
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Publication of CN1249788C publication Critical patent/CN1249788C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CNB018203515A 2000-12-21 2001-12-13 绝缘膜的蚀刻方法 Expired - Lifetime CN1249788C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP389151/2000 2000-12-21
JP2000389151 2000-12-21
JP389151/00 2000-12-21

Publications (2)

Publication Number Publication Date
CN1483219A CN1483219A (zh) 2004-03-17
CN1249788C true CN1249788C (zh) 2006-04-05

Family

ID=18855762

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018203515A Expired - Lifetime CN1249788C (zh) 2000-12-21 2001-12-13 绝缘膜的蚀刻方法

Country Status (7)

Country Link
US (1) US20040035826A1 (ja)
JP (1) JP4008352B2 (ja)
KR (1) KR100782632B1 (ja)
CN (1) CN1249788C (ja)
AU (1) AU2002222631A1 (ja)
TW (1) TW521335B (ja)
WO (1) WO2002050885A1 (ja)

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CN106297831A (zh) * 2015-05-21 2017-01-04 新科实业有限公司 在衬底形成图案的方法

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JP4164643B2 (ja) * 2002-07-17 2008-10-15 日本ゼオン株式会社 ドライエッチング方法及びパーフルオロ−２−ペンチンの製造方法
JP4963156B2 (ja) * 2003-10-03 2012-06-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
US7794616B2 (en) * 2004-08-09 2010-09-14 Tokyo Electron Limited Etching gas, etching method and etching gas evaluation method
KR100650835B1 (ko) * 2004-10-29 2006-11-27 에스티마이크로일렉트로닉스 엔.브이. 반도체 소자의 소자분리막 형성방법
US7416676B2 (en) * 2005-02-16 2008-08-26 Tokyo Electron Limited Plasma etching method and apparatus, control program for performing the etching method, and storage medium storing the control program
JP2007242753A (ja) * 2006-03-07 2007-09-20 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
US7517804B2 (en) 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
JP5214152B2 (ja) * 2007-02-08 2013-06-19 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
JP4450245B2 (ja) * 2007-06-07 2010-04-14 株式会社デンソー 半導体装置の製造方法
JP4978512B2 (ja) * 2008-02-29 2012-07-18 日本ゼオン株式会社 プラズマエッチング方法
US20110265883A1 (en) * 2010-04-30 2011-11-03 Applied Materials, Inc. Methods and apparatus for reducing flow splitting errors using orifice ratio conductance control
CN103578973B (zh) * 2012-07-29 2017-09-05 中国科学院微电子研究所 氮化硅高深宽比孔的循环刻蚀方法
CN103903978B (zh) * 2012-12-27 2016-12-28 南亚科技股份有限公司 蚀刻方法
JP6836959B2 (ja) 2017-05-16 2021-03-03 東京エレクトロン株式会社 プラズマ処理装置、処理システム、及び、多孔質膜をエッチングする方法
US10276439B2 (en) 2017-06-02 2019-04-30 International Business Machines Corporation Rapid oxide etch for manufacturing through dielectric via structures

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JP3116569B2 (ja) * 1992-06-29 2000-12-11 ソニー株式会社 ドライエッチング方法
KR100246029B1 (ko) * 1997-10-20 2000-03-02 구자홍 간헐 영상 녹화재생장치
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JP4230029B2 (ja) * 1998-12-02 2009-02-25 東京エレクトロン株式会社 プラズマ処理装置およびエッチング方法
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KR100362834B1 (ko) * 2000-05-02 2002-11-29 삼성전자 주식회사 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치
KR100759602B1 (ko) * 2000-05-12 2007-09-17 동경 엘렉트론 주식회사 자기 정렬 콘택트 에칭 방법
US6362109B1 (en) * 2000-06-02 2002-03-26 Applied Materials, Inc. Oxide/nitride etching having high selectivity to photoresist
KR100363710B1 (ko) * 2000-08-23 2002-12-05 삼성전자 주식회사 셀프-얼라인 콘택 구조를 갖는 반도체 장치 및 그 제조방법
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TWI290741B (en) * 2000-11-08 2007-12-01 Daikin Ind Ltd Dry etching gas and method for dry etching
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106297831A (zh) * 2015-05-21 2017-01-04 新科实业有限公司 在衬底形成图案的方法
CN106297831B (zh) * 2015-05-21 2020-04-21 新科实业有限公司 在衬底形成图案的方法

Also Published As

Publication number Publication date
JP4008352B2 (ja) 2007-11-14
WO2002050885A1 (fr) 2002-06-27
KR100782632B1 (ko) 2007-12-06
AU2002222631A1 (en) 2002-07-01
CN1483219A (zh) 2004-03-17
TW521335B (en) 2003-02-21
US20040035826A1 (en) 2004-02-26
KR20030066747A (ko) 2003-08-09
JPWO2002050885A1 (ja) 2004-04-22

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Granted publication date: 20060405