AU2002222631A1 - Etching method for insulating film - Google Patents
Etching method for insulating filmInfo
- Publication number
- AU2002222631A1 AU2002222631A1 AU2002222631A AU2263102A AU2002222631A1 AU 2002222631 A1 AU2002222631 A1 AU 2002222631A1 AU 2002222631 A AU2002222631 A AU 2002222631A AU 2263102 A AU2263102 A AU 2263102A AU 2002222631 A1 AU2002222631 A1 AU 2002222631A1
- Authority
- AU
- Australia
- Prior art keywords
- insulating film
- etching method
- etching
- insulating
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
- H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-389151 | 2000-12-21 | ||
JP2000389151 | 2000-12-21 | ||
PCT/JP2001/010932 WO2002050885A1 (en) | 2000-12-21 | 2001-12-13 | Etching method for insulating film |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002222631A1 true AU2002222631A1 (en) | 2002-07-01 |
Family
ID=18855762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002222631A Abandoned AU2002222631A1 (en) | 2000-12-21 | 2001-12-13 | Etching method for insulating film |
Country Status (7)
Country | Link |
---|---|
US (1) | US20040035826A1 (en) |
JP (1) | JP4008352B2 (en) |
KR (1) | KR100782632B1 (en) |
CN (1) | CN1249788C (en) |
AU (1) | AU2002222631A1 (en) |
TW (1) | TW521335B (en) |
WO (1) | WO2002050885A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4164643B2 (en) * | 2002-07-17 | 2008-10-15 | 日本ゼオン株式会社 | Dry etching method and method for producing perfluoro-2-pentyne |
JP4963156B2 (en) * | 2003-10-03 | 2012-06-27 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP4723871B2 (en) * | 2004-06-23 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | Dry etching equipment |
US7794616B2 (en) * | 2004-08-09 | 2010-09-14 | Tokyo Electron Limited | Etching gas, etching method and etching gas evaluation method |
KR100650835B1 (en) * | 2004-10-29 | 2006-11-27 | 에스티마이크로일렉트로닉스 엔.브이. | Method of forming field oxide layer in semiconductor device |
US7416676B2 (en) * | 2005-02-16 | 2008-08-26 | Tokyo Electron Limited | Plasma etching method and apparatus, control program for performing the etching method, and storage medium storing the control program |
JP2007242753A (en) * | 2006-03-07 | 2007-09-20 | Tokyo Electron Ltd | Plasma etching method, plasma etching apparatus, control program, and computer storage medium |
US7517804B2 (en) * | 2006-08-31 | 2009-04-14 | Micron Technologies, Inc. | Selective etch chemistries for forming high aspect ratio features and associated structures |
JP5214152B2 (en) * | 2007-02-08 | 2013-06-19 | 東京エレクトロン株式会社 | Plasma etching method, plasma etching apparatus, control program, and computer storage medium |
JP4450245B2 (en) * | 2007-06-07 | 2010-04-14 | 株式会社デンソー | Manufacturing method of semiconductor device |
JP4978512B2 (en) * | 2008-02-29 | 2012-07-18 | 日本ゼオン株式会社 | Plasma etching method |
US20110265883A1 (en) * | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Methods and apparatus for reducing flow splitting errors using orifice ratio conductance control |
CN103578973B (en) * | 2012-07-29 | 2017-09-05 | 中国科学院微电子研究所 | The circulation lithographic method of silicon nitride high depth-to-width ratio hole |
CN103903978B (en) * | 2012-12-27 | 2016-12-28 | 南亚科技股份有限公司 | Engraving method |
CN106297831B (en) * | 2015-05-21 | 2020-04-21 | 新科实业有限公司 | Method of forming a pattern on a substrate |
JP6836959B2 (en) * | 2017-05-16 | 2021-03-03 | 東京エレクトロン株式会社 | Plasma processing equipment, processing systems, and methods for etching porous membranes |
US10276439B2 (en) | 2017-06-02 | 2019-04-30 | International Business Machines Corporation | Rapid oxide etch for manufacturing through dielectric via structures |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3038950B2 (en) * | 1991-02-12 | 2000-05-08 | ソニー株式会社 | Dry etching method |
JP3154128B2 (en) * | 1991-05-24 | 2001-04-09 | ソニー株式会社 | Dry etching method |
JP3116569B2 (en) * | 1992-06-29 | 2000-12-11 | ソニー株式会社 | Dry etching method |
KR100246029B1 (en) * | 1997-10-20 | 2000-03-02 | 구자홍 | An intermittent video record and replay device |
TW394989B (en) * | 1997-10-29 | 2000-06-21 | Matsushita Electronics Corp | Semiconductor device manufacturing and reaction room environment control method for dry etching device |
JP3003657B2 (en) * | 1997-12-24 | 2000-01-31 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US6159862A (en) * | 1997-12-27 | 2000-12-12 | Tokyo Electron Ltd. | Semiconductor processing method and system using C5 F8 |
JPH11330046A (en) * | 1998-05-08 | 1999-11-30 | Mitsubishi Electric Corp | Method for manufacturing semiconductor device and semiconductor device |
TW511335B (en) * | 1998-06-09 | 2002-11-21 | Mitsubishi Electric Corp | Integrated circuit |
US6297163B1 (en) * | 1998-09-30 | 2001-10-02 | Lam Research Corporation | Method of plasma etching dielectric materials |
TW449872B (en) * | 1998-11-12 | 2001-08-11 | Hyundai Electronics Ind | Method for forming contacts of semiconductor devices |
JP4230029B2 (en) * | 1998-12-02 | 2009-02-25 | 東京エレクトロン株式会社 | Plasma processing apparatus and etching method |
US6417090B1 (en) * | 1999-01-04 | 2002-07-09 | Advanced Micro Devices, Inc. | Damascene arrangement for metal interconnection using low k dielectric constant materials for etch stop layer |
JP2000252259A (en) * | 1999-02-25 | 2000-09-14 | Sony Corp | Dry etching method and manufacture of semiconductor device |
US6184107B1 (en) * | 1999-03-17 | 2001-02-06 | International Business Machines Corp. | Capacitor trench-top dielectric for self-aligned device isolation |
US6849193B2 (en) * | 1999-03-25 | 2005-02-01 | Hoiman Hung | Highly selective process for etching oxide over nitride using hexafluorobutadiene |
JP4578651B2 (en) * | 1999-09-13 | 2010-11-10 | 東京エレクトロン株式会社 | Plasma processing method, plasma processing apparatus, and plasma etching method |
JP2001135630A (en) * | 1999-11-10 | 2001-05-18 | Matsushita Electronics Industry Corp | Method of manufacturing semiconductor device |
US6326307B1 (en) * | 1999-11-15 | 2001-12-04 | Appllied Materials, Inc. | Plasma pretreatment of photoresist in an oxide etch process |
JP3400770B2 (en) * | 1999-11-16 | 2003-04-28 | 松下電器産業株式会社 | Etching method, semiconductor device and manufacturing method thereof |
US6337244B1 (en) * | 2000-03-01 | 2002-01-08 | Micron Technology, Inc. | Method of forming flash memory |
US6451703B1 (en) * | 2000-03-10 | 2002-09-17 | Applied Materials, Inc. | Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas |
US6337285B1 (en) * | 2000-03-21 | 2002-01-08 | Micron Technology, Inc. | Self-aligned contact (SAC) etch with dual-chemistry process |
JP4839506B2 (en) * | 2000-04-28 | 2011-12-21 | ダイキン工業株式会社 | Dry etching method |
KR100362834B1 (en) * | 2000-05-02 | 2002-11-29 | 삼성전자 주식회사 | Method for forming oxide layer in semiconductor manufacturing process and semiconductor device manufactured by using the same |
WO2001086701A2 (en) * | 2000-05-12 | 2001-11-15 | Tokyo Electron Limited | Method of high selectivity sac etching |
US6362109B1 (en) * | 2000-06-02 | 2002-03-26 | Applied Materials, Inc. | Oxide/nitride etching having high selectivity to photoresist |
KR100363710B1 (en) * | 2000-08-23 | 2002-12-05 | 삼성전자 주식회사 | Semiconductor device with self-aligned contact structure and method of manufacturing the same |
US6797639B2 (en) * | 2000-11-01 | 2004-09-28 | Applied Materials Inc. | Dielectric etch chamber with expanded process window |
US20040035825A1 (en) * | 2000-11-08 | 2004-02-26 | Shingo Nakamura | Dry etching gas and method for dry etching |
JP4213871B2 (en) * | 2001-02-01 | 2009-01-21 | 株式会社日立製作所 | Manufacturing method of semiconductor device |
TW483111B (en) * | 2001-06-08 | 2002-04-11 | Promos Technologies Inc | Method for forming contact of memory device |
US6674241B2 (en) * | 2001-07-24 | 2004-01-06 | Tokyo Electron Limited | Plasma processing apparatus and method of controlling chemistry |
US6518164B1 (en) * | 2001-11-30 | 2003-02-11 | United Microelectronics Corp. | Etching process for forming the trench with high aspect ratio |
-
2001
- 2001-12-13 KR KR1020037008446A patent/KR100782632B1/en active IP Right Grant
- 2001-12-13 JP JP2002551894A patent/JP4008352B2/en not_active Expired - Fee Related
- 2001-12-13 US US10/451,107 patent/US20040035826A1/en not_active Abandoned
- 2001-12-13 WO PCT/JP2001/010932 patent/WO2002050885A1/en active Application Filing
- 2001-12-13 CN CNB018203515A patent/CN1249788C/en not_active Expired - Lifetime
- 2001-12-13 AU AU2002222631A patent/AU2002222631A1/en not_active Abandoned
- 2001-12-18 TW TW090131337A patent/TW521335B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20040035826A1 (en) | 2004-02-26 |
CN1483219A (en) | 2004-03-17 |
WO2002050885A1 (en) | 2002-06-27 |
KR20030066747A (en) | 2003-08-09 |
TW521335B (en) | 2003-02-21 |
CN1249788C (en) | 2006-04-05 |
JP4008352B2 (en) | 2007-11-14 |
JPWO2002050885A1 (en) | 2004-04-22 |
KR100782632B1 (en) | 2007-12-06 |
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