AU2001233002A1 - Etching solution and method - Google Patents

Etching solution and method

Info

Publication number
AU2001233002A1
AU2001233002A1 AU2001233002A AU3300201A AU2001233002A1 AU 2001233002 A1 AU2001233002 A1 AU 2001233002A1 AU 2001233002 A AU2001233002 A AU 2001233002A AU 3300201 A AU3300201 A AU 3300201A AU 2001233002 A1 AU2001233002 A1 AU 2001233002A1
Authority
AU
Australia
Prior art keywords
etching solution
etching
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001233002A
Inventor
Michael J. Davison
Heidi L. Denton
George Matamis
Jeffrey A. Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001233002A1 publication Critical patent/AU2001233002A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
AU2001233002A 2000-02-04 2001-01-26 Etching solution and method Abandoned AU2001233002A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49786400A 2000-02-04 2000-02-04
US09497864 2000-02-04
PCT/US2001/002569 WO2001057921A1 (en) 2000-02-04 2001-01-26 Etching solution and method

Publications (1)

Publication Number Publication Date
AU2001233002A1 true AU2001233002A1 (en) 2001-08-14

Family

ID=23978615

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001233002A Abandoned AU2001233002A1 (en) 2000-02-04 2001-01-26 Etching solution and method

Country Status (5)

Country Link
EP (1) EP1256126A1 (en)
JP (1) JP2003536242A (en)
KR (1) KR20020075907A (en)
AU (1) AU2001233002A1 (en)
WO (1) WO2001057921A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI282814B (en) * 2002-09-13 2007-06-21 Daikin Ind Ltd Etchant and etching method
KR100626382B1 (en) 2004-08-03 2006-09-20 삼성전자주식회사 Etchant solutions and methods of forming a magnetic memory device using the same
JP4828451B2 (en) * 2006-03-27 2011-11-30 東京エレクトロン株式会社 Substrate processing method, semiconductor device manufacturing method, and substrate processing apparatus
WO2007140193A1 (en) * 2006-05-25 2007-12-06 Honeywell International Inc. Selective tantalum carbide etchant, methods of production and uses thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395304A (en) * 1982-05-11 1983-07-26 Rca Corporation Selective etching of phosphosilicate glass
US5824601A (en) * 1997-06-30 1998-10-20 Motorola, Inc. Carboxylic acid etching solution and method

Also Published As

Publication number Publication date
JP2003536242A (en) 2003-12-02
WO2001057921A1 (en) 2001-08-09
EP1256126A1 (en) 2002-11-13
KR20020075907A (en) 2002-10-07

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