CN102349153A - 引线框架及其制造方法 - Google Patents
引线框架及其制造方法 Download PDFInfo
- Publication number
- CN102349153A CN102349153A CN2010800116686A CN201080011668A CN102349153A CN 102349153 A CN102349153 A CN 102349153A CN 2010800116686 A CN2010800116686 A CN 2010800116686A CN 201080011668 A CN201080011668 A CN 201080011668A CN 102349153 A CN102349153 A CN 102349153A
- Authority
- CN
- China
- Prior art keywords
- coating
- layer
- nickel
- alloy
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0021371 | 2009-03-12 | ||
KR1020090021371A KR20100103015A (ko) | 2009-03-12 | 2009-03-12 | 리드 프레임 및 그 제조방법 |
PCT/KR2010/001098 WO2010104274A2 (en) | 2009-03-12 | 2010-02-23 | Lead frame and method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102349153A true CN102349153A (zh) | 2012-02-08 |
CN102349153B CN102349153B (zh) | 2014-04-09 |
Family
ID=42728909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080011668.6A Expired - Fee Related CN102349153B (zh) | 2009-03-12 | 2010-02-23 | 引线框架及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8564107B2 (zh) |
JP (2) | JP2012520564A (zh) |
KR (1) | KR20100103015A (zh) |
CN (1) | CN102349153B (zh) |
TW (1) | TWI411081B (zh) |
WO (1) | WO2010104274A2 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102661829A (zh) * | 2012-04-28 | 2012-09-12 | 无锡永阳电子科技有限公司 | So8塑料封装传感器 |
CN102817056A (zh) * | 2012-08-15 | 2012-12-12 | 中山品高电子材料有限公司 | 一种引线框架钯镍合金镀层的电镀工艺 |
CN105489506A (zh) * | 2016-01-12 | 2016-04-13 | 成都先进功率半导体股份有限公司 | 高焊线质量的芯片框架及其制造方法 |
CN105931972A (zh) * | 2016-06-17 | 2016-09-07 | 泰兴市永志电子器件有限公司 | 半导体框架的内引线分层制作方法 |
CN106119915A (zh) * | 2016-06-27 | 2016-11-16 | 中山品高电子材料有限公司 | 引线框架的电镀方法 |
CN106169458A (zh) * | 2015-05-18 | 2016-11-30 | 友立材料株式会社 | 半导体元件安装用引线框架与半导体装置及其制造方法 |
CN103988301B (zh) * | 2011-12-12 | 2017-02-22 | 海成帝爱斯株式会社 | 引线框架和使用该引线框架制造的半导体封装件 |
CN107422904A (zh) * | 2017-05-16 | 2017-12-01 | 张家港康得新光电材料有限公司 | 触摸屏与电子设备 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101241735B1 (ko) * | 2008-09-05 | 2013-03-08 | 엘지이노텍 주식회사 | 리드 프레임 및 그 제조방법 |
KR101113891B1 (ko) * | 2009-10-01 | 2012-02-29 | 삼성테크윈 주식회사 | 리드 프레임 및 리드 프레임 제조 방법 |
DE102011008163A1 (de) * | 2011-01-10 | 2012-07-12 | Bayer Material Science Ag | Beschichtung für metallische Zellelement-Werkstoffe einer Elektrolysezelle |
KR101802850B1 (ko) | 2011-01-11 | 2017-11-29 | 해성디에스 주식회사 | 반도체 패키지 |
US9679869B2 (en) | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
US20130098659A1 (en) * | 2011-10-25 | 2013-04-25 | Yiu Fai KWAN | Pre-plated lead frame for copper wire bonding |
WO2013089376A1 (en) * | 2011-12-12 | 2013-06-20 | Samsung Techwin Co., Ltd | Lead frame and semiconductor package manufactured by using the same |
CN104410373B (zh) | 2012-06-14 | 2016-03-09 | 西凯渥资讯处理科技公司 | 包含相关系统、装置及方法的功率放大器模块 |
JP6537524B2 (ja) * | 2014-11-04 | 2019-07-03 | イーグル工業株式会社 | メカニカルシール装置 |
JP6789965B2 (ja) * | 2015-11-05 | 2020-11-25 | 古河電気工業株式会社 | リードフレーム材およびその製造方法 |
JP6589577B2 (ja) * | 2015-11-10 | 2019-10-16 | 凸版印刷株式会社 | 樹脂付リードフレーム基板の製造方法 |
JP6623108B2 (ja) * | 2016-03-31 | 2019-12-18 | 古河電気工業株式会社 | リードフレーム材料およびその製造方法 |
WO2017179447A1 (ja) * | 2016-04-12 | 2017-10-19 | 古河電気工業株式会社 | リードフレーム材およびその製造方法 |
CN109891575B (zh) * | 2016-10-18 | 2023-07-14 | 株式会社电装 | 电子装置及其制造方法 |
JP7016677B2 (ja) * | 2017-11-21 | 2022-02-07 | 新光電気工業株式会社 | リードフレーム、半導体装置、リードフレームの製造方法 |
CN110265376A (zh) | 2018-03-12 | 2019-09-20 | 意法半导体股份有限公司 | 引线框架表面精整 |
US11735512B2 (en) | 2018-12-31 | 2023-08-22 | Stmicroelectronics International N.V. | Leadframe with a metal oxide coating and method of forming the same |
CN112888236A (zh) * | 2021-01-28 | 2021-06-01 | 深圳市途安达科技有限公司 | 一种电子车钥匙 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09307050A (ja) * | 1996-05-14 | 1997-11-28 | Sony Corp | リードフレームとこれを用いた半導体装置 |
JP2001127229A (ja) * | 1999-11-01 | 2001-05-11 | Nec Corp | リードフレーム及びそのリードフレームを用いた樹脂封止型半導体装置 |
JP2002280488A (ja) * | 2001-03-22 | 2002-09-27 | Sanyo Electric Co Ltd | 回路装置の製造方法 |
US20020153596A1 (en) * | 2001-03-30 | 2002-10-24 | Kunihiro Tsubosaki | Lead frame and semiconductor package formed using it |
US20040232534A1 (en) * | 2003-05-22 | 2004-11-25 | Shinko Electric Industries, Co., Ltd. | Packaging component and semiconductor package |
JP2007258205A (ja) * | 2006-03-20 | 2007-10-04 | Denso Corp | 電子装置およびその製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109958A (ja) * | 1991-10-17 | 1993-04-30 | Shinko Electric Ind Co Ltd | リードフレーム |
JPH0659234B2 (ja) | 1992-06-17 | 1994-08-10 | 株式会社ピーシーシーテクノロジー | 強心配糖体の製造方法 |
JP3228789B2 (ja) * | 1992-07-11 | 2001-11-12 | 新光電気工業株式会社 | 樹脂用インサート部材の製造方法 |
JPH06252311A (ja) * | 1993-03-01 | 1994-09-09 | Mitsubishi Electric Corp | リードフレーム及びその製造方法、該リードフレームを使用した半導体装置 |
JPH06260577A (ja) * | 1993-03-08 | 1994-09-16 | Nec Corp | 配線電極の被膜構造 |
US6376921B1 (en) * | 1995-11-08 | 2002-04-23 | Fujitsu Limited | Semiconductor device, method for fabricating the semiconductor device, lead frame and method for producing the lead frame |
JPH09148508A (ja) * | 1995-11-29 | 1997-06-06 | Nippon Denkai Kk | 半導体装置用リードフレーム及びこれを用いた樹脂封止型半導体装置 |
JPH09331009A (ja) * | 1996-06-10 | 1997-12-22 | Dainippon Printing Co Ltd | リードフレームとリードフレーム部材、およびこれらを用いた樹脂封止型半導体装置 |
US6037653A (en) * | 1997-03-25 | 2000-03-14 | Samsung Aerospace Industries, Ltd. | Semiconductor lead frame having multi-layered plating layer including copper-nickel plating layer |
KR100275381B1 (ko) * | 1998-04-18 | 2000-12-15 | 이중구 | 반도체 패키지용 리드프레임 및 리드프레임도금방법 |
WO2000062341A1 (fr) * | 1999-04-08 | 2000-10-19 | Shinko Electric Industries Co., Ltd. | Grille de connexion pour dispositif semi-conducteur |
US6864423B2 (en) * | 2000-12-15 | 2005-03-08 | Semiconductor Component Industries, L.L.C. | Bump chip lead frame and package |
JP2004034524A (ja) * | 2002-07-03 | 2004-02-05 | Mec Kk | 金属樹脂複合体およびその製造方法 |
JP3916586B2 (ja) * | 2003-05-16 | 2007-05-16 | 株式会社三井ハイテック | リードフレームのめっき方法 |
JP2005213573A (ja) | 2004-01-29 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 粗化銅めっき液及びそのめっき方法 |
JP2006093559A (ja) * | 2004-09-27 | 2006-04-06 | Sumitomo Metal Mining Package Materials Co Ltd | リードフレームおよびその製造方法 |
JP4857594B2 (ja) | 2005-04-26 | 2012-01-18 | 大日本印刷株式会社 | 回路部材、及び回路部材の製造方法 |
US20090146280A1 (en) * | 2005-11-28 | 2009-06-11 | Dai Nippon Printing Co., Ltd. | Circuit member, manufacturing method of the circuit member, and semiconductor device including the circuit member |
US7462926B2 (en) * | 2005-12-01 | 2008-12-09 | Asm Assembly Automation Ltd. | Leadframe comprising tin plating or an intermetallic layer formed therefrom |
KR101204092B1 (ko) * | 2008-05-16 | 2012-11-22 | 삼성테크윈 주식회사 | 리드 프레임 및 이를 구비한 반도체 패키지와 그 제조방법 |
-
2009
- 2009-03-12 KR KR1020090021371A patent/KR20100103015A/ko not_active Application Discontinuation
-
2010
- 2010-02-22 TW TW099104965A patent/TWI411081B/zh not_active IP Right Cessation
- 2010-02-23 WO PCT/KR2010/001098 patent/WO2010104274A2/en active Application Filing
- 2010-02-23 US US13/256,091 patent/US8564107B2/en not_active Expired - Fee Related
- 2010-02-23 CN CN201080011668.6A patent/CN102349153B/zh not_active Expired - Fee Related
- 2010-02-23 JP JP2011553935A patent/JP2012520564A/ja active Pending
-
2014
- 2014-01-09 JP JP2014002304A patent/JP2014099637A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09307050A (ja) * | 1996-05-14 | 1997-11-28 | Sony Corp | リードフレームとこれを用いた半導体装置 |
JP2001127229A (ja) * | 1999-11-01 | 2001-05-11 | Nec Corp | リードフレーム及びそのリードフレームを用いた樹脂封止型半導体装置 |
JP2002280488A (ja) * | 2001-03-22 | 2002-09-27 | Sanyo Electric Co Ltd | 回路装置の製造方法 |
US20020153596A1 (en) * | 2001-03-30 | 2002-10-24 | Kunihiro Tsubosaki | Lead frame and semiconductor package formed using it |
US20040232534A1 (en) * | 2003-05-22 | 2004-11-25 | Shinko Electric Industries, Co., Ltd. | Packaging component and semiconductor package |
JP2007258205A (ja) * | 2006-03-20 | 2007-10-04 | Denso Corp | 電子装置およびその製造方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103988301B (zh) * | 2011-12-12 | 2017-02-22 | 海成帝爱斯株式会社 | 引线框架和使用该引线框架制造的半导体封装件 |
CN102661829A (zh) * | 2012-04-28 | 2012-09-12 | 无锡永阳电子科技有限公司 | So8塑料封装传感器 |
CN102817056A (zh) * | 2012-08-15 | 2012-12-12 | 中山品高电子材料有限公司 | 一种引线框架钯镍合金镀层的电镀工艺 |
CN102817056B (zh) * | 2012-08-15 | 2015-03-25 | 中山品高电子材料有限公司 | 一种引线框架钯镍合金镀层的电镀工艺 |
CN106169458A (zh) * | 2015-05-18 | 2016-11-30 | 友立材料株式会社 | 半导体元件安装用引线框架与半导体装置及其制造方法 |
CN105489506A (zh) * | 2016-01-12 | 2016-04-13 | 成都先进功率半导体股份有限公司 | 高焊线质量的芯片框架及其制造方法 |
CN105489506B (zh) * | 2016-01-12 | 2018-02-06 | 成都先进功率半导体股份有限公司 | 高焊线质量的芯片框架及其制造方法 |
CN105931972A (zh) * | 2016-06-17 | 2016-09-07 | 泰兴市永志电子器件有限公司 | 半导体框架的内引线分层制作方法 |
CN106119915A (zh) * | 2016-06-27 | 2016-11-16 | 中山品高电子材料有限公司 | 引线框架的电镀方法 |
CN107422904A (zh) * | 2017-05-16 | 2017-12-01 | 张家港康得新光电材料有限公司 | 触摸屏与电子设备 |
CN107422904B (zh) * | 2017-05-16 | 2021-02-19 | 张家港康得新光电材料有限公司 | 触摸屏与电子设备 |
Also Published As
Publication number | Publication date |
---|---|
TW201034147A (en) | 2010-09-16 |
WO2010104274A2 (en) | 2010-09-16 |
US8564107B2 (en) | 2013-10-22 |
JP2012520564A (ja) | 2012-09-06 |
CN102349153B (zh) | 2014-04-09 |
JP2014099637A (ja) | 2014-05-29 |
WO2010104274A3 (en) | 2010-11-25 |
TWI411081B (zh) | 2013-10-01 |
KR20100103015A (ko) | 2010-09-27 |
US20120001307A1 (en) | 2012-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102349153B (zh) | 引线框架及其制造方法 | |
US7808109B2 (en) | Fretting and whisker resistant coating system and method | |
CN1125491C (zh) | 多层镀层引线架 | |
US8319340B2 (en) | Lead frame and method of manufacturing the same | |
KR101802851B1 (ko) | 리드 프레임, 이를 포함하는 반도체 패키지, 및 리드 프레임의 제조 방법 | |
US6037653A (en) | Semiconductor lead frame having multi-layered plating layer including copper-nickel plating layer | |
WO2017077903A1 (ja) | リードフレーム材およびその製造方法 | |
TWI751150B (zh) | 引線框架材及其製造方法 | |
CN101908515A (zh) | 半导体器件及其制备方法 | |
KR101646094B1 (ko) | 리드 프레임 및 이를 이용하여 제조된 반도체 패키지 | |
EP1524693A1 (en) | Leadframe being protected against corrosion | |
KR100378489B1 (ko) | 은 또는 은 합금도금을 이용한 반도체 패키지용 리드프레임 및 그 제조방법 | |
KR100833934B1 (ko) | 다층도금 리드프레임 및 이 리드프레임의 제조방법 | |
KR100203333B1 (ko) | 다층 도금 리드프레임 | |
KR100231832B1 (ko) | 다중 도금층을 가진 반도체 리드프레임 | |
KR20130061516A (ko) | 리드 프레임 및 이를 포함하는 반도체 패키지 | |
JPH0711477A (ja) | 貴金属めっき品 | |
KR100209264B1 (ko) | 반도체 리드 프레임 | |
KR100203334B1 (ko) | 다층도금 리드프레임 | |
KR100294911B1 (ko) | 반도체리드프레임 | |
KR100231825B1 (ko) | 반도체 리드 프레임 | |
KR20120003415A (ko) | 리드 프레임 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ALS CO., LTD. Free format text: FORMER OWNER: IG INNOTEK CO., LTD. Effective date: 20150602 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150602 Address after: Gyeonggi Do, South Korea Patentee after: KK ALS Address before: Seoul, South Kerean Patentee before: IG Innotek Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140409 Termination date: 20210223 |