CN102661829A - So8塑料封装传感器 - Google Patents

So8塑料封装传感器 Download PDF

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CN102661829A
CN102661829A CN201210129366XA CN201210129366A CN102661829A CN 102661829 A CN102661829 A CN 102661829A CN 201210129366X A CN201210129366X A CN 201210129366XA CN 201210129366 A CN201210129366 A CN 201210129366A CN 102661829 A CN102661829 A CN 102661829A
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朱荣惠
田吉成
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WUXI YONGYANG ELECTRONIC TECHNOLOGY CO LTD
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Abstract

本发明涉及一种可实现压力检测的SO8塑料封装传感器。它包括预塑模、第一引线框架和第二引线框架,预塑模上有塑封盖,塑封盖上连接有第一压力接管。第一引线框架和第二引线框架分别与预塑模形成一体,且均有4个引脚伸出。所述预塑模内腔底面贴有压力传感芯片,第二引线框架表面贴有集成电路芯片。第一引线框架、压力传感芯片间、集成电路芯片间和第二引线框架间均通过金丝引线连接。其特点是所述预塑模和塑封盖采用工程塑料注塑而成;第一引线框架和第二引线框架表面镀金;预塑模内腔内充填有硅胶。这种传感器的机械性能和热稳定性较好,使用寿命较长。

Description

SO8塑料封装传感器
技术领域
本发明涉及一种塑料封装传感器,具体地说是能够实现表压、差压、绝压检测的SO8塑料封装传感器。
背景技术
传感器是压力检测作业中使用最多的一种电器元件,目前的传感器制造工艺主要分为三种:陶瓷封装、金属封装和塑料封装。由于塑料封装在外形、重量、性能、成本及可用性方面都有优势,且其易于实现工业自动化,因此,塑料封装传感器的使用范围最为广泛。
现有塑料封装传感器多采用在预塑模内腔充填环氧树脂,固化时器件内部有较大的热应力,导致塑封料开裂,表面钝化膜开裂,界面处产生裂缝,耐湿性能降低,器件翘曲等缺陷,从而使得传感器的机械性能和热稳定性较差。
另外,现有塑封传感器的引线框架的内外引脚多采用镀银,银的抗氧化性较差,在高温焊接时易析出碳氢物质,从而降低了镀层的致密性,影响焊接,最终导致传感器的性能下降,使用寿命较短。
发明内容
本发明要解决的问题是提供一种SO8塑料封装传感器,这种传感器的机械性能和热稳定性较好,使用寿命较长。
为解决上述问题,采取以下方案:
本发明的SO8塑料封装传感器包括预塑模、第一引线框架和第二引线框架,预塑模有内腔,内腔上端有开口。第一引线框架和第二引线框架分别通过预塑封与预塑模形成一体,且第一引线框架、第二引线框架伸出在预塑模之外的部分分别通过切筋打弯以形成4个引脚。所述预塑模的内腔腔底表面通过贴片胶粘贴有压力传感芯片,在预塑模内腔内的那部分第二引线框架的上表面通过贴片胶粘贴有集成电路芯片。所述预塑模内腔内,第一引线框架与压力传感芯片间、压力传感芯片与集成电路芯片间、集成电路芯片与第二引线框架间均通过金丝引线连接。所述预塑模内腔上端的开口处有塑封盖,塑封盖通过密封胶与预塑模密封在一起。所述塑封盖上有开口,开口处连接有第一压力接管。其特点是所述预塑模和塑封盖采用工程塑料注塑而成。所述第一引线框架和第二引线框架表面镀金。所述预塑模内腔内的第一引线框架、压力传感芯片、集成电路芯片、第二引线框架及金丝引线之上充填有硅胶。
本发明的进一步改进方案是所述预塑模上在压力传感芯片下方有与外界连通的气孔。
本发明的更进一步改进方案是所述预塑模的气孔上连接有第二压力接管。
采取上述方案,具有以下优点:
由于本发明的SO8塑料封装传感器的预塑模和塑封盖采用工程塑料注塑而成,其热膨胀系数匹配性更好,且预塑模内腔充填有硅胶,硅胶在固化时收缩率低,热应力小,不会对预塑模、塑封盖和器件产生影响,从而提高了传感器的机械性能和热稳定性。又由于本发明的SO8塑料封装传感器的引线框架表面镀金,而金具有优异的抗氧化性和焊接性,提高了传感器的性能,使得传感器使用寿命较长。
附图说明
图1是本发明的SO8塑料封装传感器第一实施例的结构示意图;
图2是本发明的SO8塑料封装传感器第二实施例的结构示意图;
图3是本发明的SO8塑料封装传感器第三实施例的结构示意图;
图4是本发明的SO8塑料封装传感器第三实施例的俯视图。
具体实施方式
下面结合具体附图详细说明本发明的最佳实施例。
如图1所示,本发明的SO8塑料封装传感器的第一实施例包括预塑模2、第一引线框架1和第二引线框架8,预塑模2有内腔,内腔上端有开口。第一引线框架1和第二引线框架8分别通过预塑封与预塑模2形成一体,且第一引线框架1、第二引线框架8伸出在预塑模之外的部分分别通过切筋打弯以形成4个引脚,总数为8个引脚。所述第一引线框架1和第二引线框架8表面镀金。所述预塑模2的内腔腔底表面通过贴片胶粘贴有压力传感芯片3,在预塑模2内腔内的那部分第二引线框架8的上表面通过贴片胶粘贴有集成电路芯片7。所述预塑模2内腔内,第一引线框架1与压力传感芯片3间、压力传感芯片3与集成电路芯片7间、集成电路芯片7与第二引线框架8间均通过金丝引线9连接。所述预塑模2内腔内的第一引线框架1、压力传感芯片3、集成电路芯片7、第二引线框架8及金丝引线9之上充填有硅胶6。所述预塑模2内腔上端的开口处有塑封盖4,塑封盖4通过密封胶与预塑模2密封在一起。所述塑封盖4上有开口,塑封盖4上方有第一压力接管5,第一压力接管5的下端与开口四周相连。所述预塑模2和塑封盖4采用工程塑料注塑而成。
其中,所述第一引线框架1和第二引线框架8的上表面与预塑模2内腔底面处在同一平面上,从而可保证金丝引线9键合的质量。
第一实施例的SO8塑料封装传感器可实现绝压检测。检测时,待测气源通过塑封盖4上的第一压力接管5进入预塑模2内腔,并通过硅胶6将压力传递至压力传感器芯片3,压力传感芯片3所承受的压力为绝对压力,即为绝压,压力传感器芯片3的输出信号通过信号调理集成电路芯片7进行放大调理。
如图2所示,本发明的SO8塑料封装传感器的第二实施例与第一实施例的区别在于所述预塑模2上在压力传感芯片3下方有与外界连通的气孔10。
第二实施例的SO8塑料封装传感器可实现表压检测。检测时,待测气源通过塑封盖4上的第一压力接管5进入预塑模2内腔,并通过硅胶6将压力传递至压力传感芯片3,压力传感芯片3所承受的压力为待测气源压力与气孔10内的大气压力的差值,即为表压,压力传感芯片3的输出信号通过信号调理集成电路芯片7进行放大调理。
如图3所示,本发明的SO8塑料封装传感器的第三实施例是在第二实施例的气孔10上连接第二压力接管11。
第三实施例的SO8塑料封装传感器可实现差压检测。检测时,一个待测气源通过第一压力接管5进入预塑模2内腔,并通过硅胶6将压力传递至压力传感芯片3上表面,另一待测气源通过第二压力接管11进入预塑模气孔10内,并将压力直接作用在压力传感芯片3下表面,压力传感芯片3所承受的压力为两个待测气源的压力差值,即为差压,压力传感芯片3的输出信号通过信号调理集成电路芯片7进行放大调理。
上述三个实施例中,引线框架是预塑模的骨架,通过大片的金属条带冲制或用化学腐蚀而制成,其材料可以选择:铁镍合金、复合条带、铜基合金,要求其有足够的抗拉强度和韧性,优良的热导率,与芯片热膨胀系数的良好匹配,一般在10-20ppm/℃。

Claims (4)

1.SO8塑料封装传感器,包括预塑模(2)、第一引线框架(1)和第二引线框架(8),预塑模(2)有内腔,内腔上端有开口;第一引线框架(1)和第二引线框架(8)分别通过预塑封与预塑模(2)形成一体,且第一引线框架(1)、第二引线框架(8)伸出在预塑模(2)之外的部分分别通过切筋打弯以形成4个引脚;所述预塑模(2)内腔腔底表面通过贴片胶粘贴有压力传感芯片(3),在预塑模(2)内腔内的那部分第二引线框架(8)的上表面通过贴片胶粘贴有集成电路芯片(7);所述预塑模(2)内腔内,第一引线框架(1)与压力传感芯片(3)间、压力传感芯片(3)与集成电路芯片(7)间、集成电路芯片(7)与第二引线框架(8)间均通过金丝引线(9)连接;所述预塑模(2)内腔上端的开口处有塑封盖(4),塑封盖(4)通过密封胶与预塑模(2)密封在一起;所述塑封盖(4)上有开口,开口处连接有第一压力接管(5);其特征在于所述预塑模(2)和塑封盖4采用工程塑料注塑而成;所述第一引线框架(1)和第二引线框架(8)表面镀金;所述预塑模(2)内腔内的第一引线框架(1)、压力传感芯片(3)、集成电路芯片(7)、第二引线框架(8)及金丝引线(9)之上充填有硅胶(6)。
2.如权利要求1所述的SO8塑料封装传感器,其特征在于所述第一引线框架(1)和第二引线框架(8)的上表面与预塑模(2)内腔底面处在同一平面上。
3.如权利要求1或2所述的SO8塑料封装传感器,其特征在于所述预塑模(2)上在压力传感芯片(3)下方有与外界连通的气孔(10)。
4.如权利要求3所述的SO8塑料封装传感器,其特征在于所述预塑模的气孔(10)上连接有第二压力接管(11)。
CN201210129366XA 2012-04-28 2012-04-28 So8塑料封装传感器 Pending CN102661829A (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105021344A (zh) * 2014-04-29 2015-11-04 梅特勒-托利多仪器(上海)有限公司 用于大气压测量芯片的防水装置
CN106596641A (zh) * 2016-11-29 2017-04-26 梁结平 气体传感器及其封装方法
CN108463691A (zh) * 2016-03-23 2018-08-28 Itm半导体有限公司 压力传感器装置与压力传感器组合体及压力传感器装置的制造方法
CN114646423A (zh) * 2022-03-15 2022-06-21 无锡胜脉电子有限公司 一种高可靠性绝压压力传感器及封装方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948991A (en) * 1996-12-09 1999-09-07 Denso Corporation Semiconductor physical quantity sensor device having semiconductor sensor chip integrated with semiconductor circuit chip
CN1526167A (zh) * 2001-07-09 2004-09-01 ס�ѽ�����ɽ��ʽ���� 引线框架及其制造方法
EP1659386A1 (en) * 2003-08-26 2006-05-24 Matsushita Electric Works, Ltd. Sensor device
CN1823267A (zh) * 2003-07-15 2006-08-23 罗伯特·博世有限公司 传感器装置
CN101680812A (zh) * 2007-05-15 2010-03-24 罗伯特·博世有限公司 差压传感器装置及相应的制造方法
CN102064150A (zh) * 2009-11-18 2011-05-18 三星电机株式会社 引线框架
CN201852672U (zh) * 2010-10-29 2011-06-01 刘胜 塑料封装的压力传感器
CN102349153A (zh) * 2009-03-12 2012-02-08 Lg伊诺特有限公司 引线框架及其制造方法
CN202614454U (zh) * 2012-04-28 2012-12-19 无锡永阳电子科技有限公司 So8塑料封装传感器

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948991A (en) * 1996-12-09 1999-09-07 Denso Corporation Semiconductor physical quantity sensor device having semiconductor sensor chip integrated with semiconductor circuit chip
CN1526167A (zh) * 2001-07-09 2004-09-01 ס�ѽ�����ɽ��ʽ���� 引线框架及其制造方法
CN1823267A (zh) * 2003-07-15 2006-08-23 罗伯特·博世有限公司 传感器装置
EP1659386A1 (en) * 2003-08-26 2006-05-24 Matsushita Electric Works, Ltd. Sensor device
CN101680812A (zh) * 2007-05-15 2010-03-24 罗伯特·博世有限公司 差压传感器装置及相应的制造方法
CN102349153A (zh) * 2009-03-12 2012-02-08 Lg伊诺特有限公司 引线框架及其制造方法
CN102064150A (zh) * 2009-11-18 2011-05-18 三星电机株式会社 引线框架
CN201852672U (zh) * 2010-10-29 2011-06-01 刘胜 塑料封装的压力传感器
CN202614454U (zh) * 2012-04-28 2012-12-19 无锡永阳电子科技有限公司 So8塑料封装传感器

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105021344A (zh) * 2014-04-29 2015-11-04 梅特勒-托利多仪器(上海)有限公司 用于大气压测量芯片的防水装置
CN105021344B (zh) * 2014-04-29 2019-10-25 梅特勒-托利多仪器(上海)有限公司 用于大气压测量芯片的防水装置
CN108463691A (zh) * 2016-03-23 2018-08-28 Itm半导体有限公司 压力传感器装置与压力传感器组合体及压力传感器装置的制造方法
CN106596641A (zh) * 2016-11-29 2017-04-26 梁结平 气体传感器及其封装方法
CN114646423A (zh) * 2022-03-15 2022-06-21 无锡胜脉电子有限公司 一种高可靠性绝压压力传感器及封装方法

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