CN1526167A - 引线框架及其制造方法 - Google Patents

引线框架及其制造方法 Download PDF

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CN1526167A
CN1526167A CNA028137310A CN02813731A CN1526167A CN 1526167 A CN1526167 A CN 1526167A CN A028137310 A CNA028137310 A CN A028137310A CN 02813731 A CN02813731 A CN 02813731A CN 1526167 A CN1526167 A CN 1526167A
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lead frame
palladium
plating palladium
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sheet metal
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CN1317762C (zh
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����һ
饭谷一则
滨田阳一郎
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Oguchi Electric Materials Co ltd
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Sumitomo Metal Mining Co Ltd
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Abstract

对引线框架的金属片(1)的半导体器件安装表面和基板安装表面用钯(1a)实施电镀，对所形成的引导部分、垫片部分和非安装部分和侧面则不进行电镀。钯的使用量被减少到所需要的最小量，因而可以提供廉价的引线框架。

Description

引线框架及其制造方法
技术领域
本发明涉及一种在半导体器件中使用的引线框架及其制造方法。
背景技术
以往，引线框架借助于蚀刻加工或冲压加工由金属片成型为预定的形状，在对整个面实施了镀钯后，把半导体元件安装到预定的位置上，在用树脂对其进行密封后，用模具等将其切断成单片，作为IC芯片等的电子元件以供实用。
近年来，引线框架的规格，考虑到对环境的影响，停止使用含铅的外部镀锡，而采用对引线框架的整个面实施镀钯的方法。但是，由于钯是价格昂贵的金属材料，所以，存在着因对整个面实施镀钯而导致产品成本上升的问题。
因此，本发明的主要目的在于把钯的使用量抑制到最小而提供廉价的引线框架。
本发明的另一目的在于提供消除了故障的引线框架的制造方法。
发明内容
为了实现上述目的，本发明提供一种由金属片成型的引线框架，其特征在于：仅对半导体元件安装部分和金丝键合部分和基板安装面一侧的焊接部分的所需最低限度的部位，实施部分性的镀钯。
此外，本发明提供一种由金属片成型的引线框架，其特征在于：仅对半导体元件安装一侧的表面和基板安装一侧的表面实施镀钯，而对成型的引导部分、垫片部分以及其它的不需进行安装的部分及侧面不实施镀钯。
此外，本发明提供一种由金属片成型的引线框架，其特征在于：仅对半导体元件安装一侧的表面和基板安装一侧的表面的所需最低限度的部分实施镀钯，而对成型的引导部分、垫片部分以及其它的不需进行安装的部分及侧面不实施镀钯。
借助于此，由于要实施镀钯的面积变成为最低限度，故与对整个面实施镀钯的现有的引线框架比较，可以提供廉价的引线框架。
此外，本发明提供一种引线框架的制造方法，使金属片成型来准备引线框架坯料，对该引线框架坯料的半导体元件安装部分的所需最低限度的部位实施部分性的镀钯，接着，对上述引线框架坯料的金丝键合部分以及基板安装面一侧的焊接部分的所需最低限度部位部分地实施镀钯。
此外，本发明提供一种引线框架的制造方法，使金属片成型来准备引线框架坯料，仅仅对该引线框架坯料的半导体元件安装一侧表面实施镀钯，接着，仅仅对上述引线框架坯料的基板安装一侧表面实施镀钯，对上述引线框架坯料的引导部分、垫片部分以及其它的不进行安装的部分和侧面不实施镀钯。
此外，本发明的引线框架的制造方法是，准备要形成引线框架的金属片，在该金属片的表面和背面上设置光致抗蚀剂层，使具有所希望的引线框架形状的掩模例如贴紧到该光致抗蚀剂层的表面上，在使之曝光、显影以制作成用来实施电镀的掩模后，对露出来的金属片表面实施电镀，设置至少含有钯层的电镀层，接着，剥离上述掩模，再次在两面前面上设置光致抗蚀剂层，用具有预定的图形的掩模进行曝光和显影后得到蚀刻掩模，接着，进行蚀刻处理成型引导部分、垫片部分以及其它的形状。
此外，本发明的引线框架的制造方法是，准备要形成引线框架的金属片，在该金属片的表面和背面上设置光致抗蚀剂层，使具有所希望的引线框架形状的掩模例如贴紧到该光致抗蚀剂层的表面上，在使之曝光、显影以制作成用来实施电镀的掩模后，对露出来的金属片表面实施电镀，设置至少含有钯层的电镀层，接着，除去光致抗蚀剂层，把上述电镀层用做蚀刻光致抗蚀剂对金属片进行蚀刻，在上述金属片的要进行蚀刻的部分因该蚀刻处理而贯通之前停止蚀刻处理，用胶带把上述金属片的背面保护起来，再次进行蚀刻处理，使上述金属片的要进行蚀刻处理的部分贯通，借助于胶带分别使多个引导部分等保持为独立的位置关系。
此外，本发明的引线框架的制造方法是，准备要形成引线框架的金属片，在该金属片的表面和背面上设置光致抗蚀剂层，使具有所希望的引线框架形状的掩模例如贴紧到该光致抗蚀剂层的表面上，在使之曝光、显影制作成蚀刻掩模后，蚀刻除去露出来的金属片部分，形成引线框架形状，接着，对该表面背面实施电镀，设置至少含有钯层的电镀层。
此外，本发明的引线框架的制造方法是，准备要形成引线框架的金属片，在该金属片的表面和背面上设置光致抗蚀剂层，使具有所希望的引线框架形状的掩模例如贴紧到该光致抗蚀剂层的表面上，在使之曝光、显影制作成用来实施电镀的掩模后，对露出来的金属片表面实施电镀，把上述电镀层用做蚀刻光致抗蚀剂刻金属片，形成多个引导部分、垫片部分以及其它的形状。
倘采用上述的方法，不仅可以提供与对整个面都实施镀钯的现有的引线框架比价格低廉的引线框架，还可以提供这样的引线框架：在把半导体元件安装到引线框架的预定位置上并进行了树脂密封后，为了使之变成为单片而使用切片技术对之进行切割时，由于要进行切断的金属部分通过蚀刻处理已经溶解故只要仅仅切断树脂即可，因而不会像现有的引线框架那样产生引线短缺或树脂破损等的故障。
本发明的上述之外的目的、特征和优点，将会从参照附图进行的以下的详细的说明中了解明白。
附图说明
图1是表示本发明的引线框架的制造方法的一实施例的工序图。
图2是表示本发明的引线框架的制造方法的另一实施例的工序图。
图3是表示本发明的引线框架的制造方法的又一实施例的工序图。
图4是表示本发明的引线框架的制造方法的又一实施例的工序图。
具体实施方式
(实施例1)
图1是表示本发明的引线框架的制造方法的一实施例的工序图。在该图中，1是用来形成引线框架的铜片等的金属片；2是设置在金属片1的表面、背面上的干膜；3是覆盖到被设置在金属片1的表面上的干膜2上，并用遮光剂形成引线框架图形3a而构成的玻璃掩模；4是覆盖到被设置在金属片1的背面上的干膜2上，夹持金属片1并与引线框架图形3a对称地，用遮光剂形成引线框架图形4a而构成的玻璃掩模；5、6是形成所需要的遮光图形而构成的玻璃掩模；7是间隔金属片1而相对设置的多个蚀刻液喷射喷嘴。
接着，按照顺序来说明引线框架的制造工序。首先，如图1(a)所示，在金属片1的表面、背面的整个面上设置了起着光致抗蚀剂的作用的干膜2后，在使图形进行了位置对准的状态下，把具有引线框架图形3a、4a的玻璃掩模3、4覆盖到表面、背面上，并且，中间间隔着玻璃掩模3、4而用紫外光使该两面进行曝光。
如果在曝光后除去玻璃掩模3、4并把带有干膜的金属片1浸泡在显影液内进行显影，则如图1(b)所示，可以仅除去紫外光所照射的部分、即金丝键合部分或半导体元件安装部分等必须实施镀钯的部分的干膜2。
接着，将其放入电镀槽内，如在图1(c)中放大表示的那样，依次对必要的部分进行镍(Ni)、钯(Pd)、金(Au)等的电镀。如此，通过剥离干膜2，可以得到图1(d)所示的那样的截面形状的带有电镀层1a的金属片1。
在这样得到的带有电镀层1a的金属片1的整个表面、背面上，再次设置干膜2，如图1(e)所示，把形成了图形的玻璃掩模5、6覆盖于其上，仅使得已实施了电镀的部分被遮光，并再次用紫外光使其两面曝光。然后，与在图1(b)中所说明的情况同样地进行显影，得到具备图1(f)所示那样的截面形状的带有电镀层1a的金属片1。
在该带有电镀层1a的金属片1的两表面上，如图1(g)所示，借助于喷射喷嘴7喷射蚀刻液来进行蚀刻处理。借助于该蚀刻处理，溶解除去未实施电镀的部分的金属，最后，剥离干膜2，由此，可以得到具有图1(h)所示那样的截面形状的，即仅对所需最低限度的部分实施了电镀的一个框架的量的引线框架。
通过用适当的输送带来输送包含引线框架的若干个框架的量的长度的金属片，来连续实施从图1(a)到图1(h)的各个工序，在工序的最后进行切断，完成每一个引线框架。由该说明可知，其结果是，对于各引线框架，仅对表面、背面的必要的部位上进行镀钯。
(实施例2)
图2是表示本发明的引线框架的制造方法的另一实施例的工序图。在该图中，对于和在图1中所使用的实质上相同的构件及部分赋予相同的标号，并省略对它们的说明。通过与图1进行比较可知，由图2(a)、(b)、(c)和(d)所示的各工序，由于与图1的相关部分相同，所以省略其说明，并对在图2(e)以后所示的工序进行说明。
如图2(e)所示，对于带有电镀层1a的金属片1的两面，借助于喷嘴7，喷射蚀刻液来进行蚀刻处理。该蚀刻处理，要一直进行到未实施电镀的部分的金属几乎全被溶解除去而变得极薄的程度为止。
在如图2(f)所示，把胶带8粘贴到像上述那样得到的带有电镀层1a的金属片1的一侧的整个面上之后，如图2(g)所示，从未粘贴胶带8的一侧，再次借助于喷嘴7喷射蚀刻液来进行蚀刻处理，完全溶解除去变得极薄的未实施电镀的金属部分(连接引线部分的连接杆或悬空引线部分等的在组装后要切断的不需要的部分)。在该情况下，剩下的被电镀的金属部分，即要安装半导体元件的垫片(pad)部分或引线部分等的必要部分，如图2(h)所示，由胶带8可靠地保持，而不会破坏其相对位置关系。
(实施例3)
图3是表示本发明的引线框架的制造方法的又一实施例的工序图。在该图中，对于和在图1中所使用的实质上相同的构件或部分赋予相同的标号，省略对它们的说明。与图1进行比较可知，在图3(a)和3(b)中所示的各工序与图1的相关部分相同，所以，对图3(c)以后所示的工序进行说明。
如图3(c)所示，对与引线框架图形对应地残留有干膜2的金属片1的两面上，借助于喷射喷嘴7，喷射蚀刻液来进行蚀刻处理。该蚀刻处理，溶解除去不存在干膜2的部分的金属，一直进行到如图3(d)所示，金属片1成为开孔的状态为止。从如此成为开孔状态的金属片1的两表面上剥离干膜2，可以制作成具有如图3(d)所示的剖面的引线框架坯料。
对如此得到的引线框架坯料(金属片1)的表面、背面的必须的部位，如图3(e)放大表示的那样，分别实施镀镍(Ni)、镀钯(Pd)、镀金(Au)，从而完成引线框架。也就是说，如图3(f)所示，首先，对引线框架的表面、背面的整体，作为底层实施镀镍(Ni)，接着，如图3(g)所示，仅对半导体安装部分和金丝键合部分和基板安装面一侧的焊接部分的所需最低限度的位置实施镀钯(Pd)，最后，如图3(h)所示，对引线框架的表面、背面的整体实施镀金(Au)，从而完成引线框架。如上所述，引线框架的成品可以把价格昂贵的钯的使用量控制在最低限度，与现有的引线框架相比较为廉价。
(实施例4)
图4是表示本发明的引线框架的制造方法的又一实施例的工序图。在该图中，对于和在图1中所使用的实质上相同的构件或部分赋予相同的标号，省略对它们的说明。与图1进行比较可知，在图4(a)到(d)中所示的各工序与图1的相关部分相同，所以，对在图4(e)以后所示的工序进行说明。
在本实施例中，如图4(e)所示，通过用喷射喷嘴7对在图4(d)中得到的电镀处理完毕的金属片1的两面喷射蚀刻液，从而得到产品，而不进行第2次的曝光和显影，这一点与实施例1不同。根据本实施例，可以提供更为廉价的产品。
如上所述，根据本发明，与采用现有方法的情况进行比较，不仅可以提供价格低廉得多的引线框架，而且，还可以提供不会产生引线脱落或树脂破损等问题的引线框架。

Claims (6)

1.一种由金属片成型的引线框架，其特征在于：仅对半导体元件安装部分和金丝键合部分和基板安装面一侧的焊接部分的所需最低限度的部位，实施部分性的镀钯。
2.一种由金属片成型的引线框架，其特征在于：仅对半导体元件安装一侧的表面和基板安装一侧的表面实施镀钯，而对成型的引导部分、垫片部分以及其它的不需进行安装的部分及侧面不实施镀钯。
3.一种由金属片成型的引线框架，其特征在于：仅对半导体元件安装一侧的表面和基板安装一侧的表面的所需最低限度的部分实施镀钯，而对成型的引导部分、垫片部分以及其它的不需进行安装的部分及侧面不实施镀钯。
4.一种引线框架的制造方法，其特征在于：使金属片成型来准备引线框架坯料，对该引线框架坯料的半导体元件安装部分的所需最低限度的部位实施部分性的镀钯，接着，对上述引线框架坯料的金丝键合部分以及基板安装面一侧的焊接部分的所需最低限度部位部分地实施镀钯。
5.一种引线框架的制造方法，其特征在于：使金属片成型来准备引线框架坯料，仅仅对该引线框架坯料的半导体元件安装一侧表面实施镀钯，接着，仅仅对上述引线框架坯料的基板安装一侧表面实施镀钯，对上述引线框架坯料的引导部分、垫片部分以及其它的不进行安装的部分和侧面不实施镀钯。
6.一种引线框架的制造方法，其特征在于：使金属片成型来准备引线框架坯料，仅仅对该引线框架坯料的半导体元件安装一侧表面的所需最低限度的部分实施镀钯，接着，仅仅对上述引线框架坯料的基板安装一侧表面的所需最低限度的部分实施镀钯，对上述引线框架坯料的引导部分、垫片部分以及其它的不进行安装的部分和侧面不实施镀钯。
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ATE546835T1 (de) 2012-03-15
WO2003007373A1 (fr) 2003-01-23
KR100908891B1 (ko) 2009-07-23
TWI264099B (en) 2006-10-11
ES2383874T3 (es) 2012-06-27
US7521295B2 (en) 2009-04-21
KR20030060885A (ko) 2003-07-16
KR101021600B1 (ko) 2011-03-17
CN1317762C (zh) 2007-05-23
US7235868B2 (en) 2007-06-26

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