CN101680812A - 差压传感器装置及相应的制造方法 - Google Patents
差压传感器装置及相应的制造方法 Download PDFInfo
- Publication number
- CN101680812A CN101680812A CN200880016022A CN200880016022A CN101680812A CN 101680812 A CN101680812 A CN 101680812A CN 200880016022 A CN200880016022 A CN 200880016022A CN 200880016022 A CN200880016022 A CN 200880016022A CN 101680812 A CN101680812 A CN 101680812A
- Authority
- CN
- China
- Prior art keywords
- differential pressure
- pressure
- housing
- sensor arrangement
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000006835 compression Effects 0.000 claims description 7
- 238000007906 compression Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 239000010703 silicon Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 238000001746 injection moulding Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/141—Monolithic housings, e.g. molded or one-piece housings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
- G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L15/00—Devices or apparatus for measuring two or more fluid pressure values simultaneously
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
本发明涉及一种差压传感器装置和一种相应地制造方法。该差压传感器包括:一差压传感器芯片(1),该差压传感器芯片具有一第一压力加载区域(B)用于将作为待测量压力的第一压力(P1)加载至该差压传感器芯片(1)和一第二压力加载区域(D)用于将作为参考压力的第二压力(P2)加载至该差压传感器芯片(1);一壳体(13),该壳体部分地包围该差压传感器芯片(1);其中,该壳体(13)具有一通孔(17),通过该通孔该第一压力加载区域(B)向外露出;并且其中,该壳体(13)具有一个输入开口(17a;17b),通过该输入开口该第二压力加载区域(D)向外露出。
Description
技术领域
本发明涉及一种差压传感器装置以及一种相应的制造方法。
尽管可以被用于任意的半导体芯片装置,还是要阐明本发明以及作为本发明为基础的问题涉及具有集成的差压传感器的微机械的硅半导体芯片装置。
背景技术
DE 10 2004 051 468 A1公开了一种用于安装半导体芯片的方法,该方法具有以下步骤:
提供一个半导体芯片,该半导体芯片具有一个表面,该表面具有一个膜片区域和一个外围区域,其中,该外围区域具有一个装配区域,并且其中,一个空腔位于该膜片区域下方,该空腔一直延伸至该装配区域中并且在那里通入一个开口;
设置一个衬底,该衬底具有一个表面,该表面具有一个凹陷;
如此地将该半导体芯片的装配区域以倒装芯片技术安装在该衬底的表面上,使得该凹陷的一个棱边位于该装配区域和该膜片区域之间并且该开口指向该衬底;
用填料填充该装配区域,其中,该凹陷的棱边作为用于该填料的间隔区域,使得该填料不进入该膜片区域;
设置一个穿过该衬底至该空腔的开口的通孔。
DE 10 2005 038 443 A1公开了一种具有衬底和壳体的传感器装置,其中,该壳体在一个第一衬底区域中基本上完全地包围该衬底,并且其中,该壳体在一个第二衬底区域中至少部分地设置有一个开口。该第二衬底区域设置得在该开口的区域中从该壳体伸出。此外,所述文献还公开了,该壳体在该衬底的至少一个主平面上间隔地、至少部分地包围该第二衬底区域,使得由此形成一个通孔,该第二衬底区域单侧地伸入该通孔中。
通常,当今借助压阻的转换元件大大地扩展了微机械的硅压力传感器。为了制造膜片,例如通过各向异性的腐蚀在硅芯片中设置一个空腔。在此,被阳极键合在晶片背面的玻璃板用于降低由焊剂或者粘剂引起的机械应力。该传感器芯片通常被焊在一个金属壳体中,例如TO8,并且与一个金属罩紧密密封地焊接在一起。一个替代的装配方法在于,将该传感器芯片贴在一个陶瓷壳体上或者一个预压注壳体(Premould-)中,并且为了保护其免受环境影响而被用凝胶来钝化。
WO 02/02458A1中公开了一种绝对压力传感器芯片的制造,其中,膜片由多孔硅制造,该多孔硅在外延层之前在该膜片区域中生成并且在外延处如此围绕地设置,以至于形成一个空腔。
发明内容
作为本发明基础的构思在于,以开腔注模技术(Open-Cavity-Mould-Technik)构造具有一个突出的传感器区域的差压传感器芯片,并且设置有一个用于在壳体中加载参考压力的第二压力端子。根据本发明的差压传感器装置是耐介质的,并且也适合于含颗粒和腐蚀性的介质。
与已公知的解决方案相比,按照权利要求1的、根据本发明的差压传感器装置和按照权利要求11的、相应的制造方法具有这样的优点:即实现了简单的、低成本的和对环境影响不敏感的结构。在注模时具有低封装成本的优点。与没有第二压力端子的绝对压力传感器相比,除了用于打开一个第二压力入口的、附加的硅分离步骤外,不需要其它的方法步骤。用于打开该第二压力入口的腐蚀步骤不必穿过整个晶片地进行,而是仅穿过膜片的厚度。这节省了工艺时间。介质中的颗粒引起的从该膜片空腔至该第二压力入口的连接通道的潜在的堵塞可以被一个大面积的、网眼细密的滤网或者网栅阻止。
根据本发明的结构是耐介质的,因为电的端子(通常由铝制造)通过注模质量被保护。压力介质仅能够接触到由硅或者氮化硅(钝化)制成的表面。硅或者氮化硅是特别耐介质的,并且因此整个传感器是特别耐介质的。不需要用于钝化电的芯片端子(焊盘)的凝胶。因此,一个特别的优点是:对加速度的横向灵敏度很小以及在更高压力情况下的使用性。在凝胶保护的传感器中,在突然的压力降低时凝胶的结构会被在此在凝胶中产生的气泡破坏(类似于潜水病)。可以制造单晶的硅膜片。其特别的优点是,高的机械强度或者其中掺杂的压电电阻的高的K因数。压力传感器的现有制造工艺可以最大部分地保留。通过突出的芯片可以实现传感器膜片的好的应力脱耦。通过装配区域和膜片区域的空间距离降低了机械应力。可以实现晶片连接中的电的预测量和在装配之后的频带补偿。该膜片区域的几何结构可以任意地构造,但优选地是正方形、矩形或者圆形地构造。
在从属权利要求中有本发明相应主题的有利的进一步构型和改进。
附图说明
在附图中示出了本发明的实施例,并在以下描述中对其进行详细的阐述。
附图示出:
图1a,b:具有一个集成的差压传感器的微机械的硅半导体芯片装置的制造流程的一部分的示意性剖视图,该硅半导体芯片装置可被用于根据本发明的差压传感器装置;
图2a,b:根据本发明的差压传感器装置的第一实施方式的示意性剖视图;
图3:根据本发明的差压传感器装置的第二实施方式的示意性剖视图;
图4:根据本发明的差压传感器装置的第三实施方式的示意性剖视图;
图5:根据本发明的差压传感器装置的第四实施方式的示意性剖视图;
图6:根据本发明的差压传感器装置的第五实施方式的示意性剖视图;
具体实施方式
在附图中,相同的参考标号标示相同的部件或者功能相同的部件。
图1a,b示出具有一个集成的差压传感器的微机械的硅半导体芯片装置的制造流程的一部分的示意性剖视图,该硅半导体芯片装置可被用于根据本发明的差压传感器装置。
在图1a,b中参考标号1表示具有一个分析处理电路区域A、一个测量压力输入区域或者测量压力加载区域B、一个连接通道区域C和一个一个参考压力输入区域或者参考压力加载区域D的硅半导体芯片。
例如根据WO 02/02458的方法制造膜片5,在该膜片下面制造有一个膜片空腔2、一个连接通道3以及一个参考压力输入空间4。在该膜片5的上侧设置有一些压阻式电阻6,该电阻的电特性被用于在该膜片5变形时用于检测所施加的测量压力,其中,通过参考压力产生一个相应的反压力。参考标号8表示一个可选的集成的分析处理电路。在该膜片之上设置有一个芯片钝化装置7,例如由氮化硅构成的芯片钝化装置。
为了制造一个第二压力入口,在该芯片钝化层7的上面设置一个具有掩模开口9a的光掩模。随后进行沟道腐蚀步骤用以形成一个(图2至图6中的参考标号10a)或者多个通道10(例如栅状),所述通道允许将一个外部的参考压力施加到参考压力输入空间4上。
这种差压传感器芯片1的工作原理在于:待测量的压力施加在具有压阻式电阻6的膜片5的区域中,并且同时一个参考压力施加在开口10a或者10的区域中。为了避免所述连接通道可能将应力耦合入压阻式元件6中,有利的是,连接通道3设置在距所述压阻元件6的合适的距离上(参见图2b)。如果膜片5在该第二压力端子区域4中不是完全被去除,而是产生一个栅,则可以阻止颗粒的侵入。如果在这个栅中大面积地设置非常多、非常小的入口,则也可以减弱该栅的损耗,类似于凝胶钝化中那样。
图2a,b示出了根据本发明的差压传感器装置的第一实施方式的示意性剖视图。
根据图2a,通过将一个粘剂层15设置在一个具有端子区域11和装配区域11a的引线框的装配区域11a上进行该传感器芯片1的装配。接下来,借助于键合线20建立该差压传感器芯片1的焊盘21和该引线框的端子区域11之间的电连接。随后,用压注材料或者注模质量压力注射包封该差压传感器芯片1,其中,通过相应的凸模或者占位装置在测量压力输入区域B中留出一个通孔17和在参考压力输入区域D中留出一个输入开口17a。在注模质量的压力注射包封和硬化之后,按照目的地,在壳体上例如通过黏接设置一个位于输入开口17a上方的、用于保护该第二压力端子10a的颗粒过滤器19。
如在图2b中所示,连接通道区域C延伸至测量压力输入区域B的边缘,以便实现合适的应力脱耦。参考标号P1在图2a中表示要施加的待测量的压力,而参考标号P2表示在区域D中待施加的参考压力。
图3示出根据本发明的差压传感器装置的第二实施方式的示意性剖视图。
在该根据图3的第二实施方式中,在一个分立的分析处理芯片1a中设置有一个分析处理电路,该分析处理电路借助于粘剂层15设置在该引线框的一个另外的装配区域11b中。该分析处理芯片1a通过一个第一键合连接20a与该差压传感器芯片1连接并且通过一个第二键合线20b与该引线框的端子区域11连接。
该分析处理芯片1a与该差压传感器芯片1一起被黏接在引线框上,但与该差压传感器芯片1不同,该分析处理芯片1a完全地被壳体13的注模质量压力注射包封。
图4示出根据本发明的差压传感器装置的第三实施方式的示意性剖视图。
在该根据图4的第三实施方式中,对根据图3的第二实施方式附加地,在输入开口17a上方借助于一个O型圈32密封地设置一个压力接管30。替代地,该压力接管30也可以被黏接上或者被焊接上。
图5示出根据本发明的差压传感器装置的第四实施方式的示意性剖视图。
在该根据图5的第四实施方式中,在该壳体13的上方和下方设置有一个第一压力接头板40和一个第二压力接头板42,并因此通过具有相应的开口的相应的塑料密封装置36,38密封地被连接。在该第一压力接头板40中组合了压力接管33,35,相应于至通孔17和输入开口17a的压力入口。
该第二压力接头板42具有一个集成的压力接管37,相应于通孔17的压力出口。显而易见地,待测量的压力P1的压力连接也可在底面上实现。用于密封连接所述压力接头板40,42和该壳体13的可能的旋接装置或夹紧装置没有示出。
图6示出根据本发明的差压传感器装置的第五实施方式的示意性剖视图。
在图6所示的第五实施方式中,用于施加参考压力P2的输入开口17b倾斜地构造于壳体13中。换言之,该输入开口在壳体13中具有这样的延伸,该延伸相对该差压传感器芯片1的在该第二压力加载区域D中的芯片表面的法线是倾斜的。通过这样的布置,可以增大第一和第二压力入口之间用于密封的距离。这简化了这两个压力入口在例如压力接管或者单独的压力管路上的密封。
虽然以上借助优选的实施例阐述了本发明,但其并不限于此,而是也可以以其它的方式被实施。
在以上实施例中,仅考虑了压阻式传感器结构。然而,本发明也适合于电容式或者其它的、在其中使用差压测量膜片的传感器结构。
Claims (11)
1.差压传感器装置,具有:
一差压传感器芯片(1),该差压传感器芯片具有一用于对该差压传感器芯片(1)加载一作为待测量压力的第一压力(P1)的第一压力加载区域(B)和一用于对该差压传感器芯片(1)加载一作为参考压力的第二压力(P2)的第二压力加载区域(D);
一壳体(13),该壳体部分地包围该差压传感器芯片(1);其中,该壳体(13)具有一通孔(17),通过该通孔该第一压力加载区域(B)向外露出;并且其中,该壳体(13)具有一输入开口(17a;17b),通过该输入开口该第二压力加载区域(D)向外露出。
2.根据权利要求1所述的差压传感器装置,其特征在于,该第一压力加载区域(B)单侧地伸入该通孔(17)中。
3.根据权利要求1或2所述的差压传感器装置,其特征在于,该壳体(13)由一压注材料构成。
4.根据以上权利要求中任一项所述的差压传感器装置,其特征在于,在该输入开口(17a;17b)上方,在该壳体(13)上设置一过滤器(19)。
5.根据以上权利要求中任一项所述的差压传感器装置,其特征在于,一与该差压传感器芯片(1)电连接的分析处理芯片(1a)被该壳体(13)至少部分地包围。
6.根据以上权利要求中任一项所述的差压传感器装置,其特征在于,该差压传感器芯片(1)设置在一引线框(11,11a;11,11a,11b)上。
7.根据以上权利要求中任一项所述的差压传感器装置,其特征在于,在该输入开口(17a;17b)上方,在该壳体(13)上密封地设置一压力接管(30)。
8.根据以上权利要求中任一项所述的差压传感器装置,其特征在于,在该输入开口(17a;17b)上方和该通孔(17)上方,在该壳体(13)上密封地设置一具有相应的集成的第一和第二压力接管(33,35)的第一压力接头板(40)。
9.根据以上权利要求中任一项所述的差压传感器装置,其特征在于,在该通孔(17)下方,在该壳体(13)上密封地设置一具有一相应的集成的第三压力接管(37)的第二压力接头板(42)。
10.根据以上权利要求中任一项所述的差压传感器装置,其特征在于,该输入开口(17a;17b)在该壳体(13)中具有一延伸,该延伸相对在该第二压力加载区域(D)中的芯片表面的法线倾斜地定向。
11.用于制造一根据权利要求3的差压传感器装置的方法,其特征在于,该壳体(13)通过用所述压注材料对该差压传感器芯片(1)的压力注射包封来制造,其中,该输入开口(17a;17b)和该通孔(17)通过相应的占位装置在所述压力注射包封时形成。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007022852.1 | 2007-05-15 | ||
DE102007022852A DE102007022852A1 (de) | 2007-05-15 | 2007-05-15 | Differenzdruck-Sensoranordnung und entsprechendes Herstellungsverfahren |
PCT/EP2008/053318 WO2008138666A1 (de) | 2007-05-15 | 2008-03-19 | Differenzdruck-sensoranordnung und entsprechendes herstellungsverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101680812A true CN101680812A (zh) | 2010-03-24 |
Family
ID=39430998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880016022A Pending CN101680812A (zh) | 2007-05-15 | 2008-03-19 | 差压传感器装置及相应的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100133631A1 (zh) |
EP (1) | EP2150788A1 (zh) |
CN (1) | CN101680812A (zh) |
DE (1) | DE102007022852A1 (zh) |
WO (1) | WO2008138666A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102331325A (zh) * | 2010-07-13 | 2012-01-25 | 英飞凌科技股份有限公司 | 压力传感器封装系统和方法 |
CN102661829A (zh) * | 2012-04-28 | 2012-09-12 | 无锡永阳电子科技有限公司 | So8塑料封装传感器 |
CN103959030A (zh) * | 2011-10-07 | 2014-07-30 | 大陆汽车系统公司 | 差压传感器装置 |
CN105579819A (zh) * | 2013-10-04 | 2016-05-11 | 株式会社藤仓 | 半导体压力传感器 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8124953B2 (en) | 2009-03-12 | 2012-02-28 | Infineon Technologies Ag | Sensor device having a porous structure element |
DE102009026676A1 (de) | 2009-06-03 | 2010-12-09 | Robert Bosch Gmbh | Drucksensoranordnung und entsprechendes Herstellungsverfahren |
DE102010042438B4 (de) * | 2010-01-27 | 2013-09-26 | Robert Bosch Gmbh | Sensoranordnung |
GB2477740B (en) * | 2010-02-10 | 2014-06-25 | Oclaro Technology Ltd | Reduced length optoelectronic devices |
JP5333529B2 (ja) * | 2011-07-05 | 2013-11-06 | 株式会社デンソー | モールドパッケージの製造方法 |
DE102012010842A1 (de) * | 2012-05-31 | 2013-12-05 | Hella Kgaa Hueck & Co. | Sensor mit von einem Substrat umhüllten Sensorelement |
JP6156233B2 (ja) * | 2014-04-01 | 2017-07-05 | 株式会社デンソー | 圧力センサ |
US9663350B2 (en) * | 2014-12-12 | 2017-05-30 | Nxp Usa, Inc. | Stress isolated differential pressure sensor |
KR101740014B1 (ko) * | 2015-06-15 | 2017-05-26 | 주식회사 아이티엠반도체 | 압력센서장치 및 그 제조방법 |
IT201600121210A1 (it) * | 2016-11-30 | 2018-05-30 | St Microelectronics Srl | Modulo di trasduzione multi-dispositivo, apparecchiatura elettronica includente il modulo di trasduzione e metodo di fabbricazione del modulo di trasduzione |
JP6837349B2 (ja) * | 2017-02-16 | 2021-03-03 | セイコーインスツル株式会社 | 圧力変化測定装置、高度測定装置、及び圧力変化測定方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19709846C1 (de) * | 1997-02-28 | 1998-04-02 | Siemens Ag | Druckdifferenz-Meßumformer |
DE10032579B4 (de) | 2000-07-05 | 2020-07-02 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement |
DE102004051468A1 (de) | 2004-10-22 | 2006-04-27 | Robert Bosch Gmbh | Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung |
DE102005038443A1 (de) * | 2005-08-16 | 2007-02-22 | Robert Bosch Gmbh | Sensoranordnung mit einem Substrat und mit einem Gehäuse und Verfahren zur Herstellung einer Sensoranordnung |
-
2007
- 2007-05-15 DE DE102007022852A patent/DE102007022852A1/de not_active Withdrawn
-
2008
- 2008-03-19 WO PCT/EP2008/053318 patent/WO2008138666A1/de active Application Filing
- 2008-03-19 US US12/598,261 patent/US20100133631A1/en not_active Abandoned
- 2008-03-19 CN CN200880016022A patent/CN101680812A/zh active Pending
- 2008-03-19 EP EP08718039A patent/EP2150788A1/de not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102331325A (zh) * | 2010-07-13 | 2012-01-25 | 英飞凌科技股份有限公司 | 压力传感器封装系统和方法 |
CN103959030A (zh) * | 2011-10-07 | 2014-07-30 | 大陆汽车系统公司 | 差压传感器装置 |
CN102661829A (zh) * | 2012-04-28 | 2012-09-12 | 无锡永阳电子科技有限公司 | So8塑料封装传感器 |
CN105579819A (zh) * | 2013-10-04 | 2016-05-11 | 株式会社藤仓 | 半导体压力传感器 |
US10254184B2 (en) | 2013-10-04 | 2019-04-09 | Fujikura Ltd. | Semiconductor pressure sensor |
Also Published As
Publication number | Publication date |
---|---|
WO2008138666A1 (de) | 2008-11-20 |
US20100133631A1 (en) | 2010-06-03 |
DE102007022852A1 (de) | 2008-11-20 |
EP2150788A1 (de) | 2010-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101680812A (zh) | 差压传感器装置及相应的制造方法 | |
CN106029554B (zh) | 具有脱耦结构的传感器单元及其制造方法 | |
CN100584741C (zh) | 用于装配半导体芯片的方法及相应的半导体芯片装置 | |
US7152483B2 (en) | High pressure sensor comprising silicon membrane and solder layer | |
US9056760B2 (en) | Miniaturized electrical component comprising an MEMS and an ASIC and production method | |
US8384168B2 (en) | Sensor device with sealing structure | |
US9885626B2 (en) | Micromechanical sensor system and corresponding manufacturing method | |
US8476087B2 (en) | Methods for fabricating sensor device package using a sealing structure | |
US9082883B2 (en) | Top port MEMS cavity package and method of manufacture thereof | |
US9406747B2 (en) | Component in the form of a wafer level package and method for manufacturing same | |
US20050194685A1 (en) | Method for mounting semiconductor chips and corresponding semiconductor chip system | |
EP2388816A1 (en) | Semiconductor sensor device, method of manufacturing semiconductor sensor device, package, method of manufacturing package, module, method of manufacturing module, and electronic device | |
US9986354B2 (en) | Pre-mold for a microphone assembly and method of producing the same | |
US8028584B2 (en) | Pressure sensor and method for manufacturing the same | |
US20080164545A1 (en) | Mems microphone package and method thereof | |
US20080157238A1 (en) | Mems microphone module and method thereof | |
US8127617B2 (en) | Pressure sensor, manufacturing method thereof, and electronic component provided therewith | |
CN107084815A (zh) | 压力检测单元以及采用该压力检测单元的压力传感器 | |
CN102685657A (zh) | 部件 | |
TW201409586A (zh) | 混合整合構件及其製造方法 | |
CN102084480B (zh) | 封装器件装置及封装件用基底构件 | |
EP1317000A2 (en) | Semiconductor device having leadless package structure | |
CN103487202A (zh) | 压力传感器以及压力传感器的制造方法 | |
CN105547576A (zh) | 介质隔离式压力传感器封装结构 | |
US9499398B2 (en) | Vertically hybridly integrated assembly having an interposer for stress-decoupling of a MEMS structure, and method for its manufacture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100324 |