CN101914811A - 100毫米的高纯半绝缘单晶碳化硅晶片 - Google Patents
100毫米的高纯半绝缘单晶碳化硅晶片 Download PDFInfo
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- CN101914811A CN101914811A CN2010102572308A CN201010257230A CN101914811A CN 101914811 A CN101914811 A CN 101914811A CN 2010102572308 A CN2010102572308 A CN 2010102572308A CN 201010257230 A CN201010257230 A CN 201010257230A CN 101914811 A CN101914811 A CN 101914811A
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- crystal
- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 175
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31—Surface property or characteristic of web, sheet or block
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/876,963 | 2004-06-25 | ||
US10/876,963 US7601441B2 (en) | 2002-06-24 | 2004-06-25 | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800210742A Division CN1973064B (zh) | 2004-06-25 | 2005-06-14 | 100毫米的高纯半绝缘单晶碳化硅晶片 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101914811A true CN101914811A (zh) | 2010-12-15 |
CN101914811B CN101914811B (zh) | 2013-10-16 |
Family
ID=34972440
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012103953166A Pending CN102899723A (zh) | 2004-06-25 | 2005-06-14 | 100毫米的高纯半绝缘单晶碳化硅晶片 |
CN2005800210742A Active CN1973064B (zh) | 2004-06-25 | 2005-06-14 | 100毫米的高纯半绝缘单晶碳化硅晶片 |
CN2010102572308A Active CN101914811B (zh) | 2004-06-25 | 2005-06-14 | 100毫米的高纯半绝缘单晶碳化硅晶片 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
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CN2012103953166A Pending CN102899723A (zh) | 2004-06-25 | 2005-06-14 | 100毫米的高纯半绝缘单晶碳化硅晶片 |
CN2005800210742A Active CN1973064B (zh) | 2004-06-25 | 2005-06-14 | 100毫米的高纯半绝缘单晶碳化硅晶片 |
Country Status (7)
Country | Link |
---|---|
US (6) | US7601441B2 (zh) |
EP (5) | EP2314737B1 (zh) |
JP (3) | JP2008504203A (zh) |
KR (2) | KR20070028589A (zh) |
CN (3) | CN102899723A (zh) |
TW (1) | TWI333004B (zh) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US11661675B2 (en) | 2020-06-18 | 2023-05-30 | Taisic Materials Corp. | High-purity semi-insulating single-crystal silicon carbide wafer and crystal |
Families Citing this family (125)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7601441B2 (en) | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
US6814801B2 (en) * | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
US7314521B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low micropipe 100 mm silicon carbide wafer |
US7314520B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
US7563321B2 (en) * | 2004-12-08 | 2009-07-21 | Cree, Inc. | Process for producing high quality large size silicon carbide crystals |
WO2006070480A1 (ja) | 2004-12-27 | 2006-07-06 | Nippon Steel Corporation | 炭化珪素単結晶、炭化珪素単結晶ウェハ及びその製造方法 |
US7919815B1 (en) * | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
US9803293B2 (en) * | 2008-02-25 | 2017-10-31 | Sixpoint Materials, Inc. | Method for producing group III-nitride wafers and group III-nitride wafers |
US20100095882A1 (en) * | 2008-10-16 | 2010-04-22 | Tadao Hashimoto | Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals |
US8858709B1 (en) | 2006-04-11 | 2014-10-14 | Ii-Vi Incorporated | Silicon carbide with low nitrogen content and method for preparation |
US8361227B2 (en) | 2006-09-26 | 2013-01-29 | Ii-Vi Incorporated | Silicon carbide single crystals with low boron content |
US7767022B1 (en) | 2006-04-19 | 2010-08-03 | Ii-Vi Incorporated | Method of annealing a sublimation grown crystal |
JP4954596B2 (ja) * | 2006-04-21 | 2012-06-20 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴットの製造方法 |
US8980445B2 (en) * | 2006-07-06 | 2015-03-17 | Cree, Inc. | One hundred millimeter SiC crystal grown on off-axis seed |
EP2264223A3 (en) * | 2006-09-14 | 2011-10-26 | Cree, Inc. | Micropipe-free silicon carbide and related method of manufacture |
JP5081423B2 (ja) * | 2006-10-03 | 2012-11-28 | 株式会社ブリヂストン | 種結晶固定装置 |
US8218211B2 (en) | 2007-05-16 | 2012-07-10 | Seereal Technologies S.A. | Holographic display with a variable beam deflection |
CN101802273B (zh) | 2007-09-12 | 2013-04-17 | 昭和电工株式会社 | 外延SiC单晶衬底及外延SiC单晶衬底的制造方法 |
JP2009137777A (ja) * | 2007-12-04 | 2009-06-25 | Sumitomo Electric Ind Ltd | AlN結晶およびその成長方法 |
JP5524855B2 (ja) * | 2007-12-12 | 2014-06-18 | ダウ コーニング コーポレーション | 昇華/凝縮プロセスにより炭化ケイ素の大きな均一のインゴットを製造するための方法 |
JP5461859B2 (ja) * | 2008-03-28 | 2014-04-02 | Jfeミネラル株式会社 | AlNバルク単結晶及び半導体デバイス並びにAlN単結晶バルクの製造方法 |
EP2281076A1 (en) | 2008-06-04 | 2011-02-09 | Sixpoint Materials, Inc. | Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
TWI460323B (zh) | 2008-06-04 | 2014-11-11 | Sixpoint Materials Inc | 用於生長第iii族氮化物結晶之高壓容器及使用高壓容器生長第iii族氮化物結晶之方法及第iii族氮化物結晶 |
EP2286007B1 (en) | 2008-06-12 | 2018-04-04 | SixPoint Materials, Inc. | Method for testing gallium nitride wafers and method for producing gallium nitride wafers |
JP2010095397A (ja) * | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
US8852341B2 (en) * | 2008-11-24 | 2014-10-07 | Sixpoint Materials, Inc. | Methods for producing GaN nutrient for ammonothermal growth |
WO2010077639A2 (en) * | 2008-12-08 | 2010-07-08 | Ii-Vi Incorporated | Improved axial gradient transport (agt) growth process and apparatus utilizing resistive heating |
DE102009016137B4 (de) * | 2009-04-03 | 2012-12-20 | Sicrystal Ag | Herstellungsverfahren für einen versetzungsarmen AlN-Volumeneinkristall und versetzungsarmes einkristallines AlN-Substrat |
WO2010129718A2 (en) | 2009-05-05 | 2010-11-11 | Sixpoint Materials, Inc. | Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride |
US8574528B2 (en) | 2009-09-04 | 2013-11-05 | University Of South Carolina | Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime |
JP5346788B2 (ja) * | 2009-11-30 | 2013-11-20 | 昭和電工株式会社 | 炭化珪素単結晶の製造方法 |
JP5346821B2 (ja) * | 2010-01-15 | 2013-11-20 | 株式会社ブリヂストン | 炭化ケイ素単結晶の製造装置 |
JP2011184208A (ja) * | 2010-03-04 | 2011-09-22 | Bridgestone Corp | 炭化ケイ素単結晶の製造装置及び炭化ケイ素単結晶の製造方法 |
JP2011195360A (ja) * | 2010-03-18 | 2011-10-06 | Sumitomo Electric Ind Ltd | 坩堝、結晶製造装置、および支持台 |
PL234396B1 (pl) * | 2010-04-01 | 2020-02-28 | Instytut Tech Materialow Elektronicznych | Sposób wytwarzania kryształów, zwłaszcza węglika krzemu, z fazy gazowej |
US8377806B2 (en) * | 2010-04-28 | 2013-02-19 | Cree, Inc. | Method for controlled growth of silicon carbide and structures produced by same |
JP5384437B2 (ja) * | 2010-06-18 | 2014-01-08 | 東京エレクトロン株式会社 | 塗布方法 |
JP2012066959A (ja) * | 2010-09-22 | 2012-04-05 | Bridgestone Corp | 単結晶製造装置 |
JP6025306B2 (ja) * | 2011-05-16 | 2016-11-16 | 株式会社豊田中央研究所 | SiC単結晶、SiCウェハ及び半導体デバイス |
JP5716998B2 (ja) * | 2011-06-01 | 2015-05-13 | 住友電気工業株式会社 | 炭化珪素結晶インゴットおよび炭化珪素結晶ウエハ |
KR20120135735A (ko) * | 2011-06-07 | 2012-12-17 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
KR20120136219A (ko) * | 2011-06-08 | 2012-12-18 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
KR20120138112A (ko) * | 2011-06-14 | 2012-12-24 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
KR20120138445A (ko) * | 2011-06-15 | 2012-12-26 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
JP5817236B2 (ja) * | 2011-06-17 | 2015-11-18 | 株式会社Sumco | 半導体試料中の金属汚染評価方法および半導体基板の製造方法 |
KR20120140151A (ko) | 2011-06-20 | 2012-12-28 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
KR101854727B1 (ko) | 2011-06-24 | 2018-05-04 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
DE202012013565U1 (de) | 2011-07-20 | 2017-11-14 | Sumitomo Electric Industries, Ltd. | Siliziumkarbidsubstrat und Halbleitervorrichtung |
KR20130014272A (ko) * | 2011-07-29 | 2013-02-07 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
JP2013060328A (ja) * | 2011-09-14 | 2013-04-04 | Sumitomo Electric Ind Ltd | 炭化珪素結晶の製造方法 |
US9644288B2 (en) | 2011-11-23 | 2017-05-09 | University Of South Carolina | Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films |
US9885124B2 (en) | 2011-11-23 | 2018-02-06 | University Of South Carolina | Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition |
US8758510B2 (en) | 2011-12-28 | 2014-06-24 | Sicrystal Aktiengesellschaft | Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course |
JP5803786B2 (ja) | 2012-04-02 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
US9093420B2 (en) | 2012-04-18 | 2015-07-28 | Rf Micro Devices, Inc. | Methods for fabricating high voltage field effect transistor finger terminations |
US9124221B2 (en) | 2012-07-16 | 2015-09-01 | Rf Micro Devices, Inc. | Wide bandwidth radio frequency amplier having dual gate transistors |
US9147632B2 (en) * | 2012-08-24 | 2015-09-29 | Rf Micro Devices, Inc. | Semiconductor device having improved heat dissipation |
US9202874B2 (en) | 2012-08-24 | 2015-12-01 | Rf Micro Devices, Inc. | Gallium nitride (GaN) device with leakage current-based over-voltage protection |
US9917080B2 (en) | 2012-08-24 | 2018-03-13 | Qorvo US. Inc. | Semiconductor device with electrical overstress (EOS) protection |
US8988097B2 (en) | 2012-08-24 | 2015-03-24 | Rf Micro Devices, Inc. | Method for on-wafer high voltage testing of semiconductor devices |
US9142620B2 (en) | 2012-08-24 | 2015-09-22 | Rf Micro Devices, Inc. | Power device packaging having backmetals couple the plurality of bond pads to the die backside |
WO2014035794A1 (en) | 2012-08-27 | 2014-03-06 | Rf Micro Devices, Inc | Lateral semiconductor device with vertical breakdown region |
US9070761B2 (en) | 2012-08-27 | 2015-06-30 | Rf Micro Devices, Inc. | Field effect transistor (FET) having fingers with rippled edges |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9325281B2 (en) | 2012-10-30 | 2016-04-26 | Rf Micro Devices, Inc. | Power amplifier controller |
JP6116866B2 (ja) | 2012-11-19 | 2017-04-19 | 株式会社豊田中央研究所 | SiC単結晶成長用種結晶、及びSiC単結晶の製造方法 |
JP2014130951A (ja) * | 2012-12-28 | 2014-07-10 | Sumitomo Electric Ind Ltd | 半導体装置 |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
JP2014201498A (ja) * | 2013-04-08 | 2014-10-27 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法 |
US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
US20140332048A1 (en) * | 2013-05-08 | 2014-11-13 | Vern Green Power Solutions, Llc | Thermoelectric device |
CN103320851A (zh) * | 2013-06-05 | 2013-09-25 | 中国科学院上海硅酸盐研究所 | 大尺寸15r 碳化硅晶体的制备方法 |
WO2015035145A1 (en) * | 2013-09-06 | 2015-03-12 | Gtat Corporation | Method and apparatus for producing bulk silicon carbide from a silicon carbide precursor |
JP6241254B2 (ja) * | 2013-12-17 | 2017-12-06 | 住友電気工業株式会社 | 単結晶の製造方法 |
JP6241264B2 (ja) * | 2013-12-24 | 2017-12-06 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法 |
US9455327B2 (en) | 2014-06-06 | 2016-09-27 | Qorvo Us, Inc. | Schottky gated transistor with interfacial layer |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
US9536803B2 (en) | 2014-09-05 | 2017-01-03 | Qorvo Us, Inc. | Integrated power module with improved isolation and thermal conductivity |
US10062684B2 (en) | 2015-02-04 | 2018-08-28 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
US10615158B2 (en) | 2015-02-04 | 2020-04-07 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
DE102015111213B4 (de) * | 2015-07-10 | 2023-05-04 | Infineon Technologies Ag | Verfahren zum Verringern einer bipolaren Degradation bei einem SiC-Halbleiterbauelement und Halbleiterbauelement |
JP6578994B2 (ja) | 2016-03-04 | 2019-09-25 | 株式会社デンソー | 炭化珪素にて構成される半導体基板およびその製造方法 |
TW201807272A (zh) | 2016-08-26 | 2018-03-01 | 國家中山科學研究院 | 一種用於成長單晶晶體之裝置 |
CN106637416B (zh) * | 2016-12-28 | 2018-11-20 | 厦门大学 | 矢量强磁场下分子束外延及其原位表征装置 |
US10577720B2 (en) | 2017-01-04 | 2020-03-03 | Cree, Inc. | Stabilized, high-doped silicon carbide |
CN106757357B (zh) * | 2017-01-10 | 2019-04-09 | 山东天岳先进材料科技有限公司 | 一种高纯半绝缘碳化硅衬底的制备方法 |
WO2018160785A1 (en) * | 2017-03-02 | 2018-09-07 | University Of South Carolina | PINNING THE CONVERSION POINT BELOW THE EPILAYER INTERFACE FOR SiC POWER DEVICE |
US10793972B1 (en) | 2017-07-11 | 2020-10-06 | Ii-Vi Delaware, Inc. | High quality silicon carbide crystals and method of making the same |
KR102381395B1 (ko) * | 2017-09-18 | 2022-04-01 | 한국전기연구원 | 절연 또는 반절연 6H-SiC 기판에 구현된 SiC 반도체 소자 및 그 제조 방법 |
JP7009147B2 (ja) * | 2017-09-29 | 2022-01-25 | 富士電機株式会社 | 炭化珪素半導体基板、炭化珪素半導体基板の製造方法および炭化珪素半導体装置 |
TWI648525B (zh) | 2017-12-18 | 2019-01-21 | 國家中山科學研究院 | 一種用於量測坩堝內部熱場分布之裝置 |
JP7030506B2 (ja) * | 2017-12-22 | 2022-03-07 | 昭和電工株式会社 | 炭化珪素単結晶インゴットの製造方法 |
JP6915526B2 (ja) * | 2017-12-27 | 2021-08-04 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
CN108381326B (zh) * | 2018-02-06 | 2019-10-11 | 西京学院 | 一种碳化硅超细粉制备设备 |
JP6879236B2 (ja) * | 2018-03-13 | 2021-06-02 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
CN109338463B (zh) * | 2018-10-16 | 2020-08-11 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅单晶衬底 |
CN109280966B (zh) * | 2018-10-16 | 2019-07-05 | 山东天岳先进材料科技有限公司 | 掺杂少量钒的高质量半绝缘碳化硅单晶及衬底的制备方法 |
JP7235318B2 (ja) * | 2018-10-16 | 2023-03-08 | 山▲東▼天岳先▲進▼科技股▲フン▼有限公司 | 少量のバナジウムをドーピングした半絶縁炭化ケイ素単結晶、基板、製造方法 |
CN109554759A (zh) * | 2018-12-27 | 2019-04-02 | 芜湖启迪半导体有限公司 | 一种碳化硅籽晶的粘接方法以及碳化硅单晶晶锭的制备方法 |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
TWI723415B (zh) * | 2019-06-05 | 2021-04-01 | 環球晶圓股份有限公司 | 碳化矽晶體及碳化矽晶種片 |
WO2020255343A1 (ja) * | 2019-06-20 | 2020-12-24 | 三菱電機株式会社 | 炭化ケイ素単結晶、半導体素子 |
KR102340110B1 (ko) * | 2019-10-29 | 2021-12-17 | 주식회사 쎄닉 | 탄화규소 잉곳, 웨이퍼 및 이의 제조방법 |
US20210269937A1 (en) | 2020-03-02 | 2021-09-02 | Ii-Vi Delaware, Inc. | Silicon carbide crystals and methods for producing same |
JP2021195301A (ja) * | 2020-06-18 | 2021-12-27 | 盛新材料科技股▲ふん▼有限公司Taisic Materials Corp. | 半絶縁性単結晶炭化ケイ素粉末の製造方法 |
US20210395917A1 (en) * | 2020-06-18 | 2021-12-23 | Taisic Materials Corp. | Semi-insulating single-crystal silicon carbide bulk material and powder |
US20220025548A1 (en) * | 2020-07-27 | 2022-01-27 | Globalwafers Co., Ltd. | Silicon carbide ingot and method of fabricating the same |
US20220025547A1 (en) * | 2020-07-27 | 2022-01-27 | Globalwafers Co., Ltd. | Manufacturing method of silicon carbide wafer and semiconductor structure |
CN113981529A (zh) | 2020-07-27 | 2022-01-28 | 环球晶圆股份有限公司 | 碳化硅晶碇的制造方法 |
US11827999B2 (en) * | 2021-01-12 | 2023-11-28 | Applied Materials, Inc. | Methods of forming silicon carbide coated base substrates at multiple temperatures |
JP6903362B1 (ja) * | 2021-02-05 | 2021-07-14 | 株式会社Brillar | 合成宝石用結晶体の製造方法 |
WO2022192473A2 (en) * | 2021-03-09 | 2022-09-15 | Central Coast Agriculture, Inc. | Systems and methods for isolating materials |
CN113264774A (zh) * | 2021-06-24 | 2021-08-17 | 郑州航空工业管理学院 | 一种晶种诱导微波合成的SiC晶体及其制备方法 |
CN114134573B (zh) * | 2021-11-30 | 2024-04-19 | 武汉大学 | 用于降低氮化铝晶体生长应力的装置 |
CN114093765B (zh) * | 2022-01-18 | 2023-02-28 | 浙江大学杭州国际科创中心 | 一种提高碳化硅薄膜少子寿命的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10182296A (ja) * | 1996-12-19 | 1998-07-07 | Nippon Steel Corp | 単結晶炭化珪素インゴット及びその製造方法 |
EP1160361A1 (en) * | 2000-05-31 | 2001-12-05 | Hoya Corporation | Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element |
WO2003085175A1 (fr) * | 2002-04-04 | 2003-10-16 | Nippon Steel Corporation | Cristal germe de monocristal de carbure de silicium et procede de production de lingot au moyen de celui-ci |
US20030233975A1 (en) * | 2002-06-24 | 2003-12-25 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
Family Cites Families (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6615060A (zh) | 1966-10-25 | 1968-04-26 | ||
US4556436A (en) * | 1984-08-22 | 1985-12-03 | The United States Of America As Represented By The Secretary Of The Navy | Method of preparing single crystalline cubic silicon carbide layers |
JPS6473000A (en) | 1987-09-16 | 1989-03-17 | Hitachi Metals Ltd | Heat treatment of gallium arsenide single crystal |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
GB8816632D0 (en) | 1988-07-13 | 1988-08-17 | Raychem Ltd | Electrical device |
US5119540A (en) | 1990-07-24 | 1992-06-09 | Cree Research, Inc. | Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product |
JPH05208900A (ja) * | 1992-01-28 | 1993-08-20 | Nisshin Steel Co Ltd | 炭化ケイ素単結晶の成長装置 |
GB9206086D0 (en) | 1992-03-20 | 1992-05-06 | Philips Electronics Uk Ltd | Manufacturing electronic devices comprising,e.g.tfts and mims |
JP3159800B2 (ja) | 1992-08-28 | 2001-04-23 | ダイセル化学工業株式会社 | 光学異性体の分離法 |
US5709745A (en) | 1993-01-25 | 1998-01-20 | Ohio Aerospace Institute | Compound semi-conductors and controlled doping thereof |
US5441011A (en) * | 1993-03-16 | 1995-08-15 | Nippon Steel Corporation | Sublimation growth of single crystal SiC |
US5611955A (en) | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
US5679153A (en) | 1994-11-30 | 1997-10-21 | Cree Research, Inc. | Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
JPH08208380A (ja) * | 1995-01-25 | 1996-08-13 | Nippon Steel Corp | 単結晶炭化珪素の製造方法 |
US5563428A (en) * | 1995-01-30 | 1996-10-08 | Ek; Bruce A. | Layered structure of a substrate, a dielectric layer and a single crystal layer |
DE19514081A1 (de) * | 1995-04-13 | 1996-10-17 | Siemens Ag | Verfahren zum Herstellen eines elektrischen Kontakts auf einer SiC-Oberfläche |
US5873973A (en) | 1995-04-13 | 1999-02-23 | Northrop Grumman Corporation | Method for single filament transverse reinforcement in composite prepreg material |
WO1997007265A1 (de) * | 1995-08-16 | 1997-02-27 | Siemens Aktiengesellschaft | KEIMKRISTALL ZUM HERSTELLEN VON EINKRISTALLEN, VERWENDUNG DES KEIMKRISTALLS UND VERFAHREN ZUM HERSTELLEN VON SiC-EINKRISTALLEN ODER EINKRISTALLINEN SiC-SCHICHTEN |
JPH09110584A (ja) * | 1995-10-25 | 1997-04-28 | Sanyo Electric Co Ltd | 単結晶成長方法 |
US5718760A (en) | 1996-02-05 | 1998-02-17 | Cree Research, Inc. | Growth of colorless silicon carbide crystals |
US6110279A (en) * | 1996-03-29 | 2000-08-29 | Denso Corporation | Method of producing single-crystal silicon carbide |
EP0956594A1 (en) | 1997-01-31 | 1999-11-17 | Northrop Grumman Corporation | High resistivity silicon carbide substrates for high power microwave devices |
US5873937A (en) * | 1997-05-05 | 1999-02-23 | Northrop Grumman Corporation | Method of growing 4H silicon carbide crystal |
US6201342B1 (en) | 1997-06-30 | 2001-03-13 | The United States Of America As Represented By The Secretary Of The Navy | Automatically sharp field emission cathodes |
JPH1160391A (ja) | 1997-08-08 | 1999-03-02 | Denso Corp | 炭化珪素単結晶の製造方法 |
CN1272957A (zh) | 1997-09-30 | 2000-11-08 | 因芬尼昂技术股份公司 | 通过注入掺杂制成的碳化硅半导体的热修复法 |
JP3680531B2 (ja) * | 1997-12-11 | 2005-08-10 | 株式会社豊田中央研究所 | 種結晶固定剤及びそれを用いた単結晶の製造方法 |
JP4036531B2 (ja) | 1998-05-27 | 2008-01-23 | 富士通株式会社 | 半導体集積回路 |
EP1105555B1 (de) | 1998-07-13 | 2002-04-24 | Siemens Aktiengesellschaft | VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN |
US6086672A (en) | 1998-10-09 | 2000-07-11 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
US6218680B1 (en) * | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
US6396080B2 (en) * | 1999-05-18 | 2002-05-28 | Cree, Inc | Semi-insulating silicon carbide without vanadium domination |
EP1194618B1 (de) * | 1999-07-07 | 2003-10-08 | Siemens Aktiengesellschaft | Verfahren zur sublimationszüchtung eines sic-einkristalls mit aufheizen unter züchtungsdruck |
DE50006005D1 (de) * | 1999-07-07 | 2004-05-13 | Siemens Ag | Keimkristallhalter mit seitlicher einfassung eines sic-keimkristalls |
US6446180B2 (en) | 1999-07-19 | 2002-09-03 | Micron Technology, Inc. | Memory device with synchronized output path |
JP3581055B2 (ja) | 1999-09-07 | 2004-10-27 | ティーポールディバーシー株式会社 | 高濃度液体中性洗浄剤組成物 |
US6824611B1 (en) * | 1999-10-08 | 2004-11-30 | Cree, Inc. | Method and apparatus for growing silicon carbide crystals |
US6451112B1 (en) | 1999-10-15 | 2002-09-17 | Denso Corporation | Method and apparatus for fabricating high quality single crystal |
JP4258921B2 (ja) * | 1999-11-10 | 2009-04-30 | 株式会社豊田中央研究所 | 種結晶固定剤、種結晶固定方法およびそれらを用いた単結晶の製造方法 |
JP4253974B2 (ja) | 1999-12-22 | 2009-04-15 | 住友電気工業株式会社 | SiC単結晶およびその成長方法 |
US6514338B2 (en) * | 1999-12-27 | 2003-02-04 | Showa Denko Kabushiki Kaisha | Method and apparatus for producing silicon carbide single crystal |
JP4880164B2 (ja) | 2000-02-15 | 2012-02-22 | ザ フォックス グループ,インコーポレイティド | 低欠陥密度炭化ケイ素材料 |
TW548352B (en) * | 2000-03-13 | 2003-08-21 | Ii Vi Inc | Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide |
JP3961750B2 (ja) | 2000-08-21 | 2007-08-22 | 独立行政法人産業技術総合研究所 | 単結晶の成長装置および成長方法 |
US7191938B2 (en) * | 2000-12-26 | 2007-03-20 | Dynamic Solutions International Corporation | Systems and methods for enterprise based issuance of identification cards |
JP4275308B2 (ja) | 2000-12-28 | 2009-06-10 | 株式会社デンソー | 炭化珪素単結晶の製造方法およびその製造装置 |
JP4903946B2 (ja) * | 2000-12-28 | 2012-03-28 | 株式会社ブリヂストン | 炭化ケイ素単結晶の製造方法及び製造装置 |
JP4523733B2 (ja) * | 2001-04-05 | 2010-08-11 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴットの製造方法並びに炭化珪素単結晶育成用種結晶の装着方法 |
JP4619567B2 (ja) | 2001-04-10 | 2011-01-26 | 株式会社ブリヂストン | 炭化ケイ素単結晶及びその製造方法 |
US6507046B2 (en) | 2001-05-11 | 2003-01-14 | Cree, Inc. | High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage |
US20020189538A1 (en) | 2001-05-31 | 2002-12-19 | Swoboda Dean P. | Coated paperboard, method and apparatus for producing same |
JP4986342B2 (ja) | 2001-06-15 | 2012-07-25 | 株式会社ブリヂストン | 炭化ケイ素単結晶及びその製造方法 |
US20020189536A1 (en) | 2001-06-15 | 2002-12-19 | Bridgestone Corporation | Silicon carbide single crystal and production thereof |
US6801989B2 (en) | 2001-06-28 | 2004-10-05 | Micron Technology, Inc. | Method and system for adjusting the timing offset between a clock signal and respective digital signals transmitted along with that clock signal, and memory device and computer system using same |
KR100422572B1 (ko) | 2001-06-30 | 2004-03-12 | 주식회사 하이닉스반도체 | 레지스터 제어 지연고정루프 및 그를 구비한 반도체 소자 |
JP4224755B2 (ja) * | 2001-10-16 | 2009-02-18 | 株式会社デンソー | 種結晶の固定方法 |
JP2003137694A (ja) * | 2001-10-26 | 2003-05-14 | Nippon Steel Corp | 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法 |
SE520968C2 (sv) * | 2001-10-29 | 2003-09-16 | Okmetic Oyj | Högresistiv monokristallin kiselkarbid och metod för dess framställning |
US6759911B2 (en) | 2001-11-19 | 2004-07-06 | Mcron Technology, Inc. | Delay-locked loop circuit and method using a ring oscillator and counter-based delay |
US6562127B1 (en) * | 2002-01-16 | 2003-05-13 | The United States Of America As Represented By The Secretary Of The Navy | Method of making mosaic array of thin semiconductor material of large substrates |
JP4054197B2 (ja) * | 2002-02-05 | 2008-02-27 | 新日本製鐵株式会社 | 炭化珪素単結晶育成用種結晶及びその製造方法並びに炭化珪素単結晶インゴットの製造方法 |
JP4157326B2 (ja) * | 2002-05-27 | 2008-10-01 | 新日本製鐵株式会社 | 4h型炭化珪素単結晶インゴット及びウエハ |
JP4100228B2 (ja) * | 2002-04-15 | 2008-06-11 | 住友金属工業株式会社 | 炭化珪素単結晶とその製造方法 |
US7220313B2 (en) | 2003-07-28 | 2007-05-22 | Cree, Inc. | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
US7316747B2 (en) | 2002-06-24 | 2008-01-08 | Cree, Inc. | Seeded single crystal silicon carbide growth and resulting crystals |
US7147715B2 (en) | 2003-07-28 | 2006-12-12 | Cree, Inc. | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
US7601441B2 (en) * | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
US7175704B2 (en) | 2002-06-27 | 2007-02-13 | Diamond Innovations, Inc. | Method for reducing defect concentrations in crystals |
JP2004103061A (ja) | 2002-09-05 | 2004-04-02 | Renesas Technology Corp | 半導体記憶装置 |
JP4434568B2 (ja) | 2002-11-14 | 2010-03-17 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US7115896B2 (en) | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
FR2852974A1 (fr) * | 2003-03-31 | 2004-10-01 | Soitec Silicon On Insulator | Procede de fabrication de cristaux monocristallins |
US6964917B2 (en) | 2003-04-08 | 2005-11-15 | Cree, Inc. | Semi-insulating silicon carbide produced by Neutron transmutation doping |
JP3764462B2 (ja) | 2003-04-10 | 2006-04-05 | 株式会社豊田中央研究所 | 炭化ケイ素単結晶の製造方法 |
US7023010B2 (en) | 2003-04-21 | 2006-04-04 | Nanodynamics, Inc. | Si/C superlattice useful for semiconductor devices |
EP1471168B2 (en) * | 2003-04-24 | 2011-08-10 | Norstel AB | Device and method for producing single crystals by vapour deposition |
US7314520B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
US7300519B2 (en) | 2004-11-17 | 2007-11-27 | Cree, Inc. | Reduction of subsurface damage in the production of bulk SiC crystals |
-
2004
- 2004-06-25 US US10/876,963 patent/US7601441B2/en not_active Expired - Lifetime
-
2005
- 2005-06-14 EP EP10185756.3A patent/EP2314737B1/en active Active
- 2005-06-14 EP EP05760208A patent/EP1784528A1/en not_active Ceased
- 2005-06-14 EP EP10154952.5A patent/EP2182100A3/en not_active Ceased
- 2005-06-14 KR KR1020077001899A patent/KR20070028589A/ko active Application Filing
- 2005-06-14 CN CN2012103953166A patent/CN102899723A/zh active Pending
- 2005-06-14 EP EP10185753.0A patent/EP2327816A3/en not_active Ceased
- 2005-06-14 WO PCT/US2005/020718 patent/WO2006011976A1/en active Application Filing
- 2005-06-14 JP JP2007518105A patent/JP2008504203A/ja active Pending
- 2005-06-14 EP EP10185748.0A patent/EP2336399B1/en active Active
- 2005-06-14 KR KR1020137001166A patent/KR101341471B1/ko active IP Right Grant
- 2005-06-14 CN CN2005800210742A patent/CN1973064B/zh active Active
- 2005-06-14 CN CN2010102572308A patent/CN101914811B/zh active Active
- 2005-06-24 TW TW094121084A patent/TWI333004B/zh active
- 2005-10-12 US US11/248,458 patent/US7323051B2/en not_active Expired - Lifetime
- 2005-10-12 US US11/248,998 patent/US7351286B2/en not_active Expired - Lifetime
- 2005-10-12 US US11/249,107 patent/US9200381B2/en active Active
-
2010
- 2010-05-03 US US12/772,254 patent/US8147991B2/en not_active Expired - Lifetime
-
2011
- 2011-03-04 JP JP2011047944A patent/JP5841339B2/ja active Active
- 2011-07-12 US US13/181,167 patent/US9790619B2/en active Active
-
2014
- 2014-04-11 JP JP2014081866A patent/JP2014133701A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10182296A (ja) * | 1996-12-19 | 1998-07-07 | Nippon Steel Corp | 単結晶炭化珪素インゴット及びその製造方法 |
EP1160361A1 (en) * | 2000-05-31 | 2001-12-05 | Hoya Corporation | Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element |
WO2003085175A1 (fr) * | 2002-04-04 | 2003-10-16 | Nippon Steel Corporation | Cristal germe de monocristal de carbure de silicium et procede de production de lingot au moyen de celui-ci |
US20030233975A1 (en) * | 2002-06-24 | 2003-12-25 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113818083A (zh) * | 2020-06-18 | 2021-12-21 | 盛新材料科技股份有限公司 | 半绝缘单晶碳化硅粉末的制备方法 |
CN113818082A (zh) * | 2020-06-18 | 2021-12-21 | 盛新材料科技股份有限公司 | 高纯度半绝缘单晶碳化硅晶片与碳化硅晶体 |
CN113818081A (zh) * | 2020-06-18 | 2021-12-21 | 盛新材料科技股份有限公司 | 半绝缘单晶碳化硅块材以及粉末 |
US11661675B2 (en) | 2020-06-18 | 2023-05-30 | Taisic Materials Corp. | High-purity semi-insulating single-crystal silicon carbide wafer and crystal |
CN113026105A (zh) * | 2021-02-26 | 2021-06-25 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种使用预处理粉料制备碳化硅晶体的生长方法 |
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