CN101866113B - 衬底处理方法、曝光装置及器件制造方法 - Google Patents

衬底处理方法、曝光装置及器件制造方法 Download PDF

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Publication number
CN101866113B
CN101866113B CN2010101407110A CN201010140711A CN101866113B CN 101866113 B CN101866113 B CN 101866113B CN 2010101407110 A CN2010101407110 A CN 2010101407110A CN 201010140711 A CN201010140711 A CN 201010140711A CN 101866113 B CN101866113 B CN 101866113B
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China
Prior art keywords
substrate
liquid
mentioned
immersion
exposure
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Chinese (zh)
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CN101866113A (zh
Inventor
中野胜志
奥村正彦
杉原太郎
水谷刚之
藤原朋春
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Nikon Corp
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Nikon Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2010101407110A 2004-10-26 2005-10-25 衬底处理方法、曝光装置及器件制造方法 Expired - Fee Related CN101866113B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004310993 2004-10-26
JP2004-310993 2004-10-26

Related Parent Applications (1)

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CN2005800359899A Division CN101044594B (zh) 2004-10-26 2005-10-25 衬底处理方法、曝光装置及器件制造方法

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CN101866113A CN101866113A (zh) 2010-10-20
CN101866113B true CN101866113B (zh) 2013-04-24

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CN2005800359899A Expired - Fee Related CN101044594B (zh) 2004-10-26 2005-10-25 衬底处理方法、曝光装置及器件制造方法

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US (3) US8040489B2 (enExample)
EP (1) EP1814144B1 (enExample)
JP (2) JP4665712B2 (enExample)
KR (2) KR101236120B1 (enExample)
CN (2) CN101866113B (enExample)
TW (1) TWI436403B (enExample)
WO (1) WO2006046562A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101520591B1 (ko) 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG2014014955A (en) 2003-12-03 2014-07-30 Nippon Kogaku Kk Exposure apparatus, exposure method, method for producing device, and optical part
JP4220423B2 (ja) 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
TWI436403B (zh) * 2004-10-26 2014-05-01 尼康股份有限公司 A cleaning method, a substrate processing method, an exposure apparatus, and an element manufacturing method
KR20070100865A (ko) 2004-12-06 2007-10-12 가부시키가이샤 니콘 기판 처리 방법, 노광 방법, 노광 장치 및 디바이스 제조방법
JP5040646B2 (ja) * 2005-03-23 2012-10-03 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
JP4718893B2 (ja) * 2005-05-13 2011-07-06 株式会社東芝 パターン形成方法
JPWO2007000995A1 (ja) * 2005-06-28 2009-01-22 株式会社ニコン 露光装置及び方法、並びにデバイス製造方法
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
CN102298274A (zh) 2006-05-18 2011-12-28 株式会社尼康 曝光方法及装置、维护方法、以及组件制造方法
WO2007136052A1 (ja) * 2006-05-22 2007-11-29 Nikon Corporation 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法
JP4994976B2 (ja) * 2006-07-18 2012-08-08 東京エレクトロン株式会社 高屈折率液体循環システム、パターン形成方法およびコンピュータ読取可能な記憶媒体
JP2008042004A (ja) * 2006-08-08 2008-02-21 Tokyo Electron Ltd パターン形成方法およびパターン形成装置
KR101523388B1 (ko) * 2006-08-30 2015-05-27 가부시키가이샤 니콘 노광 장치, 디바이스 제조 방법, 클리닝 방법 및 클리닝용 부재
WO2008029884A1 (en) * 2006-09-08 2008-03-13 Nikon Corporation Cleaning member, cleaning method and device manufacturing method
JP4807749B2 (ja) * 2006-09-15 2011-11-02 東京エレクトロン株式会社 露光・現像処理方法
JP4926678B2 (ja) * 2006-12-04 2012-05-09 東京エレクトロン株式会社 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体
WO2008108253A2 (en) * 2007-02-23 2008-09-12 Nikon Corporation Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure
NL2004808A (en) * 2009-06-30 2011-01-12 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
JP5402664B2 (ja) * 2010-01-19 2014-01-29 株式会社ニコン 洗浄方法、露光装置、及びデバイスの製造方法
NL2008168A (en) * 2011-02-25 2012-08-28 Asml Netherlands Bv Method of calculating model parameters of a substrate, a lithographic apparatus and an apparatus for controlling lithographic processing by a lithographic apparatus.
NL2008845A (en) * 2011-05-24 2012-11-27 Asml Netherlands Bv Lithographic apparatus and component.
HK1246869A1 (zh) * 2015-05-28 2018-09-14 株式会社尼康 物体保持装置、曝光装置、平板显示器的制造方法及器件制造方法
US11014103B2 (en) * 2017-07-26 2021-05-25 Taiwan Semiconductor Manufacturing Company Ltd. Substrate processing apparatus and substrate processing method
CN107255907B (zh) * 2017-08-17 2021-01-22 京东方科技集团股份有限公司 一种补偿装置、曝光装置及曝光补偿方法
CN107561747A (zh) * 2017-10-12 2018-01-09 惠科股份有限公司 一种显示基板的预烘烤装置及预烘烤系统
TWI673567B (zh) * 2018-02-13 2019-10-01 特銓股份有限公司 光罩靜電清潔設備以及光罩靜電清潔方法
CN110597021B (zh) * 2019-09-20 2021-04-23 上海华力微电子有限公司 浸没式光刻工艺中晶圆表面残水缺陷的改善方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051101A (en) * 1997-03-21 2000-04-18 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus, substrate transport apparatus and substrate transfer apparatus

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPH0695511B2 (ja) * 1986-09-17 1994-11-24 大日本スクリ−ン製造株式会社 洗浄乾燥処理方法
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2830492B2 (ja) 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5549663A (en) * 1994-03-09 1996-08-27 Cordis Corporation Endoprosthesis having graft member and exposed welded end junctions, method and procedure
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
AU5067898A (en) 1996-11-28 1998-06-22 Nikon Corporation Aligner and method for exposure
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000241990A (ja) 1999-02-22 2000-09-08 Nec Corp フォトレジストパターンの形成方法
US6737207B2 (en) * 2000-04-25 2004-05-18 Nikon Corporation Method for evaluating lithography system and method for adjusting substrate-processing apparatus
JP2001319849A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 液処理装置及び液処理方法
US6827814B2 (en) 2000-05-08 2004-12-07 Tokyo Electron Limited Processing apparatus, processing system and processing method
JP2001345245A (ja) 2000-05-31 2001-12-14 Nikon Corp 露光方法及び露光装置並びにデバイス製造方法
JP2002148820A (ja) 2000-11-15 2002-05-22 Clariant (Japan) Kk パターン形成方法及びこの方法に使用される処理剤
JP4015823B2 (ja) * 2001-05-14 2007-11-28 株式会社東芝 アルカリ現像液の製造方法，アルカリ現像液，パターン形成方法，レジスト膜の剥離方法，及び薬液塗布装置
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
EP2495613B1 (en) 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
CN101713932B (zh) * 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
EP1420300B1 (en) * 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
AU2003302830A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus and method for manufacturing device
JP4232449B2 (ja) * 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
AU2003289271A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
SG171468A1 (en) 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
JP4525062B2 (ja) 2002-12-10 2010-08-18 株式会社ニコン 露光装置及びデバイス製造方法、露光システム
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
DE60314668T2 (de) 2002-12-19 2008-03-06 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
ES2268450T3 (es) 2002-12-19 2007-03-16 Koninklijke Philips Electronics N.V. Metodo y dispositivo para irradiar puntos en una capa.
JP4604452B2 (ja) * 2003-02-26 2011-01-05 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
KR20190007532A (ko) 2003-04-11 2019-01-22 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
TWI616932B (zh) 2003-05-23 2018-03-01 Nikon Corp Exposure device and component manufacturing method
DE10324477A1 (de) 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
JP3993549B2 (ja) * 2003-09-30 2007-10-17 株式会社東芝 レジストパターン形成方法
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
EP1672682A4 (en) 2003-10-08 2008-10-15 Zao Nikon Co Ltd SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
US8208119B2 (en) * 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
JP4220423B2 (ja) 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
JP4535489B2 (ja) 2004-03-31 2010-09-01 東京エレクトロン株式会社 塗布・現像装置
KR100557222B1 (ko) 2004-04-28 2006-03-07 동부아남반도체 주식회사 이머전 리소그라피 공정의 액체 제거 장치 및 방법
JP4759311B2 (ja) * 2004-05-17 2011-08-31 富士フイルム株式会社 パターン形成方法
EP1598704B1 (en) 2004-05-17 2009-12-02 FUJIFILM Corporation Pattern forming method
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005353763A (ja) 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
KR101245070B1 (ko) 2004-06-21 2013-03-18 가부시키가이샤 니콘 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP2006080143A (ja) 2004-09-07 2006-03-23 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
TWI436403B (zh) 2004-10-26 2014-05-01 尼康股份有限公司 A cleaning method, a substrate processing method, an exposure apparatus, and an element manufacturing method
US7732123B2 (en) 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
US20070002296A1 (en) 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
US20070093067A1 (en) 2005-10-24 2007-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer edge cleaning process
US7986395B2 (en) 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051101A (en) * 1997-03-21 2000-04-18 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus, substrate transport apparatus and substrate transfer apparatus

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