JP4807749B2 - 露光・現像処理方法 - Google Patents
露光・現像処理方法 Download PDFInfo
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- JP4807749B2 JP4807749B2 JP2006250294A JP2006250294A JP4807749B2 JP 4807749 B2 JP4807749 B2 JP 4807749B2 JP 2006250294 A JP2006250294 A JP 2006250294A JP 2006250294 A JP2006250294 A JP 2006250294A JP 4807749 B2 JP4807749 B2 JP 4807749B2
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- 238000011161 development Methods 0.000 title claims description 26
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- 239000007788 liquid Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 42
- 238000012545 processing Methods 0.000 claims description 42
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 25
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 15
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 claims description 12
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 12
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 claims description 12
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 8
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 6
- 229940035429 isobutyl alcohol Drugs 0.000 claims description 6
- AQZGPSLYZOOYQP-UHFFFAOYSA-N Diisoamyl ether Chemical compound CC(C)CCOCCC(C)C AQZGPSLYZOOYQP-UHFFFAOYSA-N 0.000 claims description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 108
- 238000012546 transfer Methods 0.000 description 37
- 239000010408 film Substances 0.000 description 26
- 238000007654 immersion Methods 0.000 description 17
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 15
- 238000001816 cooling Methods 0.000 description 15
- 238000001035 drying Methods 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 238000011109 contamination Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
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- 230000001681 protective effect Effects 0.000 description 3
- KEVMYFLMMDUPJE-UHFFFAOYSA-N 2,7-dimethyloctane Chemical group CC(C)CCCCC(C)C KEVMYFLMMDUPJE-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
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Images
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
1 キャリアステーション
2 処理部
3 インターフェース部
4 露光部
25 レジスト塗布ユニット
26 現像ユニット
34 洗浄装置
45A,45B 第1,第2の洗浄液供給ノズル
50A 加熱・冷却ユニット
50 熱処理装置
70 コントローラ(制御手段)
Claims (2)
- レジスト塗布ユニットと現像ユニットとを含む処理部と、レジスト液が塗布された被処理基板を露光する露光部と、上記処理部と露光部との間に設けられ、被処理基板の表面を洗浄するための洗浄装置を含み上記露光部と被処理基板の受け渡しを行うように構成されたインターフェース部と、を備える塗布・現像処理装置により、被処理基板の表面に塗布されたレジスト層の表面に、光を透過する液層を形成した状態で被処理基板の表面を露光した後、露光された被処理基板の表面を現像する露光・現像処理方法において、
上記露光前のレジスト液が塗布された上記被処理基板を、上記洗浄装置を構成する基板保持部により回転自在で水平に保持した状態で、レジスト液が塗布された上記被処理基板の表面をアルコール系洗浄液により洗浄する洗浄工程と、
上記露光後で現像前の上記被処理基板を、上記洗浄装置を構成する基板保持部により回転自在で水平に保持した状態で、被処理基板の表面を純水又はアルコール系洗浄液により洗浄する露光後洗浄工程と、を有し、
上記アルコール系洗浄液が、2−ブタノール,イソブタノール,n−デカン,2−オクタノール,n−ペンタノール,イソブチルアルコール,ジイソアミルエーテル,2−メチル−1−ブタノール,ジブチルエーテル,2−メチル−2−ブタノール,2−メチル−4−ペンタノール又は4−メチル−2−ペンタノールのいずれかである、ことを特徴とする露光・現像処理方法。 - 請求項1記載の露光・現像処理方法において、
上記洗浄工程の洗浄時間と、上記露光後から洗浄処理開始までの時間及びこの洗浄処理後から加熱処理開始までの時間を一定に制御する、ことを特徴とする露光・現像処理方法。
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JP2006250294A JP4807749B2 (ja) | 2006-09-15 | 2006-09-15 | 露光・現像処理方法 |
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JP2006250294A JP4807749B2 (ja) | 2006-09-15 | 2006-09-15 | 露光・現像処理方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008071984A JP2008071984A (ja) | 2008-03-27 |
JP4807749B2 true JP4807749B2 (ja) | 2011-11-02 |
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JP2006250294A Expired - Fee Related JP4807749B2 (ja) | 2006-09-15 | 2006-09-15 | 露光・現像処理方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5308054B2 (ja) * | 2008-04-16 | 2013-10-09 | 株式会社Sokudo | 基板処理装置 |
JP5212443B2 (ja) * | 2010-09-13 | 2013-06-19 | 東京エレクトロン株式会社 | 塗布、現像装置、塗布、現像方法及び記憶媒体 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5659236A (en) * | 1979-10-19 | 1981-05-22 | Fujitsu Ltd | Photoresist developing method |
JP3496895B2 (ja) * | 1994-10-20 | 2004-02-16 | 東京応化工業株式会社 | 半導体ウェーハの処理方法 |
JPH11174691A (ja) * | 1997-12-17 | 1999-07-02 | Tokuyama Sekiyu Kagaku Kk | レジスト洗浄剤 |
JP3895269B2 (ja) * | 2002-12-09 | 2007-03-22 | 富士通株式会社 | レジストパターンの形成方法並びに半導体装置及びその製造方法 |
JP4220423B2 (ja) * | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
JP4535489B2 (ja) * | 2004-03-31 | 2010-09-01 | 東京エレクトロン株式会社 | 塗布・現像装置 |
JP2006024692A (ja) * | 2004-07-07 | 2006-01-26 | Toshiba Corp | レジストパターン形成方法 |
JP2006049757A (ja) * | 2004-08-09 | 2006-02-16 | Tokyo Electron Ltd | 基板処理方法 |
JP2006108564A (ja) * | 2004-10-08 | 2006-04-20 | Renesas Technology Corp | 電子デバイスの製造方法および露光システム |
CN101044594B (zh) * | 2004-10-26 | 2010-05-12 | 株式会社尼康 | 衬底处理方法、曝光装置及器件制造方法 |
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- 2006-09-15 JP JP2006250294A patent/JP4807749B2/ja not_active Expired - Fee Related
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